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1. 发明授权

US5897333A Method for forming integrated composite semiconductor devices 失效
标题翻译：形成集成复合半导体器件的方法
公开(公告)号：US5897333A
公开(公告)日：1999-04-27
申请号：US818813
申请日：1997-03-14
申请人： Keith Wayne Goossen , James A. Walker
发明人： Keith Wayne Goossen , James A. Walker
IPC分类号： H01L21/98 , H01L25/16 , H01L21/30 , H01L21/46
CPC分类号： H01L25/0657 , H01L21/561 , H01L21/563 , H01L21/568 , H01L21/6835 , H01L25/167 , H01L25/50 , H01L2221/68363 , H01L2224/04042 , H01L2224/81005 , H01L2224/81203 , H01L2225/06513 , H01L24/16 , H01L24/81 , H01L2924/12042 , H01L2924/14 , Y10S148/135 , Y10S438/977
摘要： In an improved method for manufacturing an integrated composite semiconductor device according to the present invention, a semiconductor-based stop-etch layer having holes therein at selected sites is disposed over the epoxy or other flowable hardener used in flip-chip bonding. The hardener underneath the openings in the stop-etch layer is subtantially removed via a dry etch applied therethrough, exposing desired structure, such as bonding pads, formerly covered by the hardener. The epoxy underneath the stop-etch layer is substantially preserved.
摘要翻译：在根据本发明的用于制造集成复合半导体器件的改进方法中，在用于倒装芯片接合的环氧树脂或其它可流动硬化剂上设置在选定位置具有孔的基于半导体的阻挡蚀刻层。通过在其中施加的干蚀刻，在停止蚀刻层中的开口下方的固化剂被去除，暴露出所需的结构，例如以前被固化剂覆盖的键合焊盘。停止蚀刻层下面的环氧树脂基本上被保留。

2. 发明授权

US5858814A Hybrid chip and method therefor 失效
标题翻译：混合芯片及其方法
公开(公告)号：US5858814A
公开(公告)日：1999-01-12
申请号：US766214
申请日：1996-12-12
申请人： Keith Wayne Goossen , James A. Walker
发明人： Keith Wayne Goossen , James A. Walker
IPC分类号： H01L21/68 , H01L21/98 , H01L21/44
CPC分类号： H01L21/6835 , H01L25/50 , H01L2221/68359 , H01L2221/68363 , H01L2224/16 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305
摘要： A hybrid chip having at least two different types of semiconductor devices co-located on a common substrate, and a method therefor, are disclosed. The devices have different multiple epitaxial layer structures so that each different type of device is first grown on a separate appropriately-selected substrate, and then attached to the common substrate. According to the method, a first device is attached to the common substrate using flip-chip bonding methods. Flip-chip bonding involves attaching the device and the substrate at bonding pads, flowing a flowable hardener between the first device and the common substrate and allowing it to harden, and then removing the substrate upon which the first device was grown. The hardener is removed before attaching the second type of device via flip-chip bonding.
摘要翻译：公开了具有共同位于公共基板上的至少两种不同类型的半导体器件的混合芯片及其方法。这些器件具有不同的多个外延层结构，使得每个不同类型的器件首先在单独的适当选择的衬底上生长，然后连接到公共衬底。根据该方法，使用倒装芯片接合方法将第一器件附接到公共衬底。倒装芯片粘合包括将装置和基板连接在接合焊盘处，使可流动的固化剂在第一装置和公共基板之间流动并允许其硬化，然后移除其上生长第一装置的基板。在通过倒装芯片接合连接第二类型的器件之前去除硬化剂。

3. 发明授权

US5668023A Composition for off-axis growth sites on non-polar substrates 失效
标题翻译：非极性基质上离轴生长位点的组成
公开(公告)号：US5668023A
公开(公告)日：1997-09-16
申请号：US676989
申请日：1996-07-08
申请人： Keith Wayne Goossen , James A. Walker
发明人： Keith Wayne Goossen , James A. Walker
IPC分类号： C23C14/34 , H01L21/027 , H01L21/20 , H01L21/308 , H01L21/336 , H01L21/365 , H01L29/78 , H01L21/265
CPC分类号： H01L21/3085 , H01L21/0274 , H01L21/3083 , Y10S438/933
摘要： Nonpolar substrates comprising off-axis growth regions for the growth of polar semiconductors, and a method for making such substrates, are disclosed. According to the invention, an erodible material, such as a photoresist, is applied to a substrate at a site and is exposed to radiation at that site which has an linear variation in energy at the surface of the erodible material. Due to this variation in exposure energy, a taper results in the erodible material after development. The tapered region is then etched in a manner which etches both the erodible layer and the underlying substrate. The taper in the erodible layer provides a varying attenuation during the etching process such that the taper of the erodible layer is transferred to the substrate.
摘要翻译：公开了包含用于极性半导体的生长的离轴生长区域的非极性底物及其制造方法。根据本发明，一种可蚀刻的材料，例如光致抗蚀剂，被施加到一个位置处的基底上，并且暴露在该可剥蚀材料表面处的能量线性变化的位置。由于暴露能量的这种变化，锥形导致显影后的可侵蚀材料。然后以蚀刻两个可侵蚀层和下面的衬底的方式蚀刻该锥形区域。可侵蚀层中的锥度在蚀刻工艺期间提供变化的衰减，使得可侵蚀层的锥度被转移到衬底。

4. 发明授权

US5767997A Method and arrangement for a combined modulator/photodetector 失效
标题翻译：组合调制器/光电探测器的方法和装置
公开(公告)号：US5767997A
公开(公告)日：1998-06-16
申请号：US675980
申请日：1996-07-05
申请人： David John Bishop , Keith Wayne Goossen , James A. Walker
发明人： David John Bishop , Keith Wayne Goossen , James A. Walker
IPC分类号： H04B10/24 , H04B10/00
CPC分类号： H04B10/40
摘要： Apparatus and methods for a combined optical modulator/photodetector are disclosed. A modulator chip is attached to a photodetector chip using a non-conductive epoxy or solder. The combined modulator/photodetector can be configured in at least two ways. In one configuration, the modulator is located on the upper surface of a chip that is attached, at its lower surface, to a photodetector containing chip. In another configuration, the modulator is located on the lower surface of the modulator chip, which is again attached at its lower surface to the pbotodetector chip. By combining the modulator and photodetector in the manner described above, they can be placed in a single package, resulting in reduced packaging costs versus a separately packaged modulator and a separately packaged photodetector. Moreover, feedback from the photodetector can used to optimize the operation of micromechanical optical modulators.
摘要翻译：公开了用于组合光调制器/光电检测器的装置和方法。使用非导电环氧树脂或焊料将调制器芯片附接到光电检测器芯片。组合的调制器/光电检测器可以至少两种方式配置。在一种配置中，调制器位于芯片的上表面上，芯片的下表面附接到包含光电检测器的芯片。在另一种配置中，调制器位于调制器芯片的下表面上，该调制器芯片的下表面再次连接到波导检测器芯片。通过以上述方式组合调制器和光电检测器，它们可以放置在单个封装中，从而与单独封装的调制器和单独封装的光电检测器相比降低了封装成本。此外，来自光电检测器的反馈可用于优化微机械光学调制器的操作。

5. 发明授权

US5784187A Wafer level integration of an optical modulator and III-V photodetector 失效
标题翻译：光调制器和III-V光电探测器的晶片级集成
公开(公告)号：US5784187A
公开(公告)日：1998-07-21
申请号：US685174
申请日：1996-07-23
申请人： John E. Cunningham , Joseph E. Ford , Keith Wayne Goossen , James A. Walker
发明人： John E. Cunningham , Joseph E. Ford , Keith Wayne Goossen , James A. Walker
IPC分类号： H01L21/8247 , G02B26/00 , H01L27/115 , H01L27/144 , H01L29/788 , H01L29/792 , G02F1/03
CPC分类号： H01L27/1443 , G02B26/00
摘要： A device having an optical modulation region and a photodetection region formed on a single wafer, and methods for making the device, are disclosed. In one configuration, the device consists of an off-axis nonpolar substrate that has, on one side, a region suitable for modulating an optical signal. The other side of the substrate has a region suitable for photodetection. The region suitable for modulating an optical signal includes a movable layer suspended over the substrate. As the movable layer moves under an applied voltage, the reflectivity of the modulation region changes. The photodetection region consists of a plurality of III-V layers. In a second configuration, the device consists of a III-V substrate that has a region for photodetection disposed on one surface. A region for optical modulation is disposed on the photodetection region.
摘要翻译：公开了具有形成在单个晶片上的光学调制区域和光电检测区域的装置及其制造方法。在一种配置中，该器件由离轴非极性衬底组成，该衬底在一侧具有适于调制光信号的区域。衬底的另一侧具有适于光电检测的区域。适于调制光信号的区域包括悬浮在衬底上的可移动层。随着移动层在施加的电压下移动，调制区域的反射率发生变化。光检测区域由多个III-V层组成。在第二种配置中，器件由具有设置在一个表面上的用于光电检测的区域的III-V衬底组成。用于光学调制的区域设置在光电检测区域上。

6. 发明授权

US06704513B1 Enhanced tilt optical power equalizer 失效
标题翻译：增强倾斜光功率均衡器
公开(公告)号：US06704513B1
公开(公告)日：2004-03-09
申请号：US09677102
申请日：2000-09-29
申请人： Keith Wayne Goossen
发明人： Keith Wayne Goossen
IPC分类号： H04J1402
CPC分类号： G02B26/02 , G02B26/001 , H04J14/0221
摘要： An electro-optic device for use in wavelength division multiplexed systems. The device comprises a layer structure having two adjustable air gaps. Optical response of the device can be changed by adjusting spacings of the air gaps. The device can be used as an optical power equalizer in wavelength division multiplexed systems.
摘要翻译：一种用于波分复用系统的电光装置。该装置包括具有两个可调气隙的层结构。可以通过调整气隙的间距来改变装置的光学响应。该装置可以用作波分复用系统中的光功率均衡器。

7. 发明授权

US06444491B1 Composite semiconductor devices and method for manufacture thereof 失效
标题翻译：复合半导体器件及其制造方法
公开(公告)号：US06444491B1
公开(公告)日：2002-09-03
申请号：US09547122
申请日：2000-04-11
申请人： Lucian Arthur D'Asaro , Keith Wayne Goossen , Sanghee Park Hui , Betty J. Tseng , James Albert Walker
发明人： Lucian Arthur D'Asaro , Keith Wayne Goossen , Sanghee Park Hui , Betty J. Tseng , James Albert Walker
IPC分类号： H01L2144
CPC分类号： H01L25/167 , H01L31/125 , H01L2221/68359 , H01L2221/68363 , H01L2224/16225 , H01L2924/00014 , H01L2924/10253 , H01L2924/00 , H01L2224/0401
摘要： An integrated semiconductor device is formed from two fabricated semiconductor devices each having a substrate by placing an etch-resist on the substrate of the one semiconductor device, by bonding the conductors of one of the fabricated semiconductor devices to the conductors of the other fabricated semiconductor device, flowing an uncured cement (e.g. epoxy) between the etch-resist and the other substrate, allowing the cement to solidify, and removing the substrate from the one of the semiconductor devices. More specifically, a hybrid semiconductor device is formed from a GaAs/AlGaAs multiple quantum well modulator having a substrate and an IC chip having a substrate by placing an etch resist on the modulator substrate, bonding the conductors of the modulator to the conductors of the chip, wicking an uncured epoxy between the modulators and the chip, allowing the epoxy to cure, and removing the substrate from the modulator.
摘要翻译：由两个制造的半导体器件形成集成半导体器件，每个半导体器件通过将所制造的半导体器件中的一个的导体连接到另一个制造的半导体器件的导体而在一个半导体器件的衬底上放置抗蚀剂而具有衬底使未固化的水泥（例如环氧树脂）在抗蚀剂和另一个基底之间流动，从而允许水泥固化，并从半导体器件中的一个去除衬底。更具体地说，混合半导体器件由GaAs / AlGaAs多量子阱调制器形成，该GaAs / AlGaAs多量子阱调制器具有衬底和具有衬底的IC芯片，通过在调制器衬底上放置蚀刻抗蚀剂，将调制器的导体与芯片的导体在调制器和芯片之间吸收未固化的环氧树脂，允许环氧树脂固化，并从调制器中除去衬底。

8. 发明授权

US5962846A Redundant linear detection arrays 失效
标题翻译：冗余线性检测阵列
公开(公告)号：US5962846A
公开(公告)日：1999-10-05
申请号：US920945
申请日：1997-08-29
申请人： Keith Wayne Goossen
发明人： Keith Wayne Goossen
IPC分类号： H01L27/146 , H04N1/04 , H04N5/217 , H04N5/367 , H04N5/374 , H01J40/14
CPC分类号： H04N5/367 , H01L27/14601 , H04N5/374
摘要： A detector array for detecting an optical signal includes a plurality of pixels. Each pixel has a plurality of detector elements coupled together in a redundant configuration such that the detector array maintains a substantially uniform response even if each of the pixels includes a number of defective detector elements. The optical signal is lengthened in the direction normal to the information vector, so that each detector element is exposed to the same portion of the optical signal. A bad-element sensor is coupled to each detector element, which is functionally responsive to the detection of a bad detector element.
摘要翻译：用于检测光信号的检测器阵列包括多个像素。每个像素具有以冗余配置耦合在一起的多个检测器元件，使得即使每个像素包括多个缺陷检测器元件，检测器阵列也保持基本均匀的响应。光信号沿垂直于信息向量的方向延长，使得每个检测器元件暴露于光信号的相同部分。不良元件传感器耦合到每个检测器元件，其在功能上对检测器元件的检测作出响应。

9. 发明授权

US5870221A Micromechanical modulator having enhanced performance 失效
标题翻译：具有增强性能的微机械调制器
公开(公告)号：US5870221A
公开(公告)日：1999-02-09
申请号：US901050
申请日：1997-07-25
申请人： Keith Wayne Goossen
发明人： Keith Wayne Goossen
IPC分类号： G02B26/00 , G02B26/02 , G02B26/08
CPC分类号： G02B26/02 , G02B26/001 , G02B26/0833
摘要： A modulator having low insertion and a broad operating bandwidth is disclosed. The modulator has a movable membrane that is spaced from a substrate. The reflectivity of the movable membrane, and the reflectivity of the subtrate/gap interface are unequal. In particular, relative to the membrane, the substrate has a lower reflectivity. Device finesse is dictated by the lower reflectivity "mirror," i.e., the substrate. The substrate configuration thus provides a broad operating bandwidth while the higher reflectivity membrane provides low insertion loss.
摘要翻译：公开了具有低插入和宽工作带宽的调制器。调制器具有与衬底间隔开的可移动膜。可移动膜的反射率，以及减速/间隙界面的反射率是不相等的。特别地，相对于膜，衬底具有较低的反射率。器件巧妙性由较低的反射率“镜子”，即基底所决定。因此，衬底配置提供了宽的工作带宽，而较高的反射膜提供了较低的插入损耗。

10. 发明授权

US06307691B1 Optical filter and method for linearization of optical power equalizer 失效
标题翻译：光功率均衡器线性化滤波器及方法
公开(公告)号：US06307691B1
公开(公告)日：2001-10-23
申请号：US09369919
申请日：1999-08-06
申请人： Keith Wayne Goossen
发明人： Keith Wayne Goossen
IPC分类号： G02B522
CPC分类号： G02B6/2937 , G02B5/281 , G02B6/29391 , G02B6/325 , H04B10/25073
摘要： An optical filter for correcting non-linear gains across a wavelength band includes a first layer having a first layer thickness according to the formula: first layer thickness=m&lgr;/(4nfirst), where m is an odd multiple integer, &lgr; is the central wavelength of the wavelength band, and nfirst is the refractive index of the first layer, and a second layer having a second layer thickness according to the formula: second layer thickness=&lgr;/(4nsecond), where &lgr; is the central wavelength of the wavelength band, and nsecond is the refractive index of the second layer. The optical filter introduces an insertion loss for wavelengths in a wavelength band of optical fiber transmission having an insertion loss curve approximating a quadratic shape in the wavelength band and having a maximum insertion loss at a central wavelength of the wavelength band.
摘要翻译：用于校正波长带的非线性增益的光学滤波器包括具有根据下式的第一层厚度的第一层：第一层厚度= mlambd /（4nfirst），其中m是奇数多个整数，lambd是中心波长并且第一个是第一层的折射率，第二层具有根据下式的第二层厚度：第二层厚度= lambd /（4nsec），其中lambd是波长带的中心波长，nsec为第二层的折射率。光滤波器对具有接近波长带中的二次形状的插入损耗曲线并且在波长带的中心波长处具有最大插入损耗的光纤传输波长带中的波长引入插入损耗。

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