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1. 发明授权

US6051063A Diamond wafer and method of producing a diamond wafer 失效
标题翻译：金刚石晶片及其制造方法
公开(公告)号：US6051063A
公开(公告)日：2000-04-18
申请号：US975254
申请日：1997-11-21
申请人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
发明人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
IPC分类号： C23C16/27 , C30B25/02 , H03H3/08 , H03H9/02 , C30B29/04
CPC分类号： C23C16/279 , C23C16/27 , C30B25/02 , C30B29/04 , H03H3/08 , H03H9/02582
摘要： A diamond wafer including a substrate and a (100) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (100) oriented film is produced by changing a hydrocarbon ratio in a material gas halfway from a higher value to a lower value. The wafer is monotonously distorted with a distortion height H satisfying 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.
摘要翻译：一种金刚石晶片，其包括在基板上生长的用于制造表面声波装置，半导体装置或耐磨盘的基板和（100）定向多晶金刚石膜。通过将材料气体中的烃比率从较高值改变为较低值来生产（100）取向膜。晶片单调失真，失真高度H满足2微米

2. 发明授权

US5776246A Diamond wafer and method of producing a diamond wafer 失效
公开(公告)号：US5776246A
公开(公告)日：1998-07-07
申请号：US418116
申请日：1995-04-06
申请人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
发明人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
IPC分类号： C23C16/27 , C30B25/02 , H03H3/08 , H03H9/02 , C30B29/04
CPC分类号： C23C16/279 , C23C16/27 , C30B25/02 , C30B29/04 , H03H3/08 , H03H9/02582
摘要： A diamond wafer including a substrate and a (100) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (100) oriented film is produced by changing a hydrocarbon ratio in a material gas halfway from a higher value to a lower value. The wafer is monotonously distorted with a distortion height H satisfying 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.

3. 发明授权

US5964942A Wafer and method of producing same 失效
标题翻译：晶圆及其制造方法
公开(公告)号：US5964942A
公开(公告)日：1999-10-12
申请号：US494719
申请日：1995-06-26
申请人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Takashi Tsuno
发明人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Takashi Tsuno
IPC分类号： C30B25/02 , C30B29/04
CPC分类号： C30B25/02 , C30B29/04
摘要： No wide bulk diamond wafer exists at present. A wide diamond-coated wafer is proposed instead of the bulk diamond wafer. Diamond is heteroepitaxially deposited on a convex-distorted non-diamond single crystal substrate by a vapor phase deposition method. In an early step, a negative bias is applied to the substrate. In the case of a Si substrate, an intermediate layer of .beta.-SiC is first deposited on the Si substrate by supplying a low carbon concentration material gas. Then the carbon concentration is raised for making a diamond film. The convex-distorted wafer is stuck to a holder having a shaft which is capable of inclining to the holder. The wafer is pushed to a turn-table of a polishing machine. The convex diamond wafer can fully be polished by inclining the holder to the shaft. A wide distorted mirror wafer of diamond is produced. Fine wire patterns can be made on the diamond mirror wafer by the photolithography.
摘要翻译：目前没有宽的大块金刚石晶圆。提出了宽金刚石涂层的晶片代替块状金刚石晶片。通过气相沉积方法将金刚石异质外延沉积在凸变形的非金刚石单晶衬底上。在早期的步骤中，向衬底施加负偏压。在Si衬底的情况下，通过提供低碳浓度的材料气体，首先在Si衬底上沉积β-SiC的中间层。然后提高碳浓度以制备金刚石膜。凸起变形的晶片粘附到具有能够倾斜到保持器的轴的保持器上。将晶片推到抛光机的转台上。通过将支架倾斜到轴上，可以完全抛光凸面金刚石晶片。产生了一个宽扭曲的金刚石镜面晶圆。可以通过光刻在金刚石镜晶片上形成细线图案。

4. 发明授权

US06356006B1 Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device 失效
标题翻译：金刚石晶片，估计金刚石晶片和金刚石表面声波器件的方法
公开(公告)号：US06356006B1
公开(公告)日：2002-03-12
申请号：US09543415
申请日：2000-04-05
申请人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
发明人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
IPC分类号： B32B3300
CPC分类号： H03H3/08 , H03H9/02582 , Y10T428/24479 , Y10T428/24917 , Y10T428/24975 , Y10T428/265 , Y10T428/30 , Y10T428/31678
摘要： Surfaces of diamond crystals are examined by coating the surfaces with thin metal films, launching laser beams to the diamond surfaces in a slanting angle, detecting defects and particles on the diamond surfaces by the scattering of beams and counting the defects and particles by a laser scanning surface defect detection apparatus. Diamond SAW devices should be made on the diamond films or bulks with the defect density less than 300 particles cm−2. Preferably, the diamond,surfaces should have roughness less than Ra20 nm. Diamond SAW filters can be produced by depositing a piezoelectric film and making interdigital transducers on the low-defect density diamond crystals.
摘要翻译：通过用薄金属膜涂覆表面来检查金刚石晶体的表面，以倾斜的角度将激光束发射到金刚石表面，通过光束的散射检测金刚石表面上的缺陷和颗粒，并通过激光扫描计算缺陷和颗粒表面缺陷检测装置。金刚石SAW器件应在缺陷密度小于300颗粒cm-2的金刚石膜或块上制成。优选地，金刚石，表面应具有小于Ra20nm的粗糙度。金刚石SAW滤波器可以通过沉积压电膜并在低缺陷密度的金刚石晶体上形成叉指式换能器来制造。

5. 发明授权

US06210780B1 Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device 有权
标题翻译：金刚石晶片，估计金刚石晶片和金刚石表面声波器件的方法
公开(公告)号：US06210780B1
公开(公告)日：2001-04-03
申请号：US09166840
申请日：1998-10-06
申请人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
发明人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
IPC分类号： H01L4118
CPC分类号： H03H3/08 , H03H9/02582 , Y10T428/24479 , Y10T428/24917 , Y10T428/24975 , Y10T428/265 , Y10T428/30 , Y10T428/31678
摘要： Surfaces of diamond crystals are examined by coating the surfaces with thin metal films, launching laser beams to the diamond surfaces in a slanting angle, detecting defects and particles on the diamond surfaces by the scattering of beams and counting the defects and particles by a laser scanning surface defect detection apparatus. Diamond SAW devices should be made on the diamond films or bulks with the defect density less than 300 particles cm−2. Preferably, the diamond surfaces should have roughness less than Ra20 nm. Diamond SAW filters can be produced by depositing a piezoelectric film and making interdigital transducers on the low-defect density diamond crystals.
摘要翻译：通过用薄金属膜涂覆表面来检查金刚石晶体的表面，以倾斜的角度将激光束发射到金刚石表面，通过光束的散射检测金刚石表面上的缺陷和颗粒，并通过激光扫描计算缺陷和颗粒表面缺陷检测装置。金刚石SAW器件应在缺陷密度小于300颗粒cm-2的金刚石膜或块上制成。优选地，金刚石表面应具有小于Ra20nm的粗糙度。金刚石SAW滤波器可以通过沉积压电膜并在低缺陷密度的金刚石晶体上形成叉指式换能器来制造。

6. 发明授权

US06320296B1 Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device 失效
公开(公告)号：US06320296B1
公开(公告)日：2001-11-20
申请号：US09825887
申请日：2001-04-05
申请人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
发明人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
IPC分类号： H10L4108
CPC分类号： H03H3/08 , H03H9/02582 , Y10T428/24479 , Y10T428/24917 , Y10T428/24975 , Y10T428/265 , Y10T428/30 , Y10T428/31678
摘要： Surfaces of diamond crystals are examined by coating the surfaces with thin metal films, launching laser beams to the diamond surfaces in a slanting angle, detecting defects and particles on the diamond surfaces by the scattering of beams and counting the defects and particles by a laser scanning surface defect detection apparatus. Diamond SAW devices should be made on the diamond films or bulks with the defect density less than 300 particles cm−2. Preferably, the diamond surfaces should have roughness less than Ra20 nm. Diamond SAW filters can be produced by depositing a piezoelectric film and making interdigital transducers on the low-defect density diamond crystals.

7. 发明授权

US5874130A Wafer and method of producing a wafer 失效
标题翻译：晶片及其制造方法
公开(公告)号：US5874130A
公开(公告)日：1999-02-23
申请号：US942294
申请日：1997-10-01
申请人： Keiichiro Tanabe , Yuichiro Seki , Naoji Fujimori
发明人： Keiichiro Tanabe , Yuichiro Seki , Naoji Fujimori
IPC分类号： C23C16/27 , C23C16/44 , C30B25/02 , C30B25/10 , C30B33/00 , H03H3/08 , H03H9/02 , H01L21/461 , B24B1/00 , C30B25/14
CPC分类号： C23C16/279 , C23C16/27 , C30B25/02 , C30B25/105 , C30B29/04 , C30B33/00 , H03H3/08 , H03H9/02582 , Y10T428/24479 , Y10T428/24521 , Y10T428/24612 , Y10T428/24628 , Y10T428/26 , Y10T428/265 , Y10T428/30
摘要： A diamond wafer including a substrate and a (111) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (111) oriented film is produced by supplying a lower carbon concentration gas and a higher carbon concentration gas alternately. The lower carbon concentration means 0% to 1% of the atomic ratio C/H. The higher carbon concentration means 1% to 8% of the atomic ratio C/H. More than 40% of layered defects are either parallel with or slanting at an angle less than 5 degrees to the surface. The wafer is monotonously distorted with a distortion height H satisfying 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.
摘要翻译：一种金刚石晶片，包括在用于制造表面声波器件，半导体器件或耐磨盘的衬底上生长的衬底和（111）取向的多晶金刚石膜。通过交替地供给低碳浓度气体和较高碳浓度的气体来制造（111）取向膜。低碳浓度是指原子比C / H的0〜1％。较高的碳浓度是指原子比C / H的1％至8％。超过40％的分层缺陷是以与表面小于5度的角度平行或倾斜。晶片单调失真，失真高度H满足2微米

8. 发明授权

US5855998A Hard material-coated wafer, method of making same, polishing apparatus and polishing method of hard material-coated wafer 失效
标题翻译：硬质材料涂层晶片，其制造方法，抛光装置和硬质材料涂层晶片的抛光方法
公开(公告)号：US5855998A
公开(公告)日：1999-01-05
申请号：US874536
申请日：1997-06-13
申请人： Keiichiro Tanabe , Akihoko Ikegaya , Yuichiro Seki , Naoji Fujimori
发明人： Keiichiro Tanabe , Akihoko Ikegaya , Yuichiro Seki , Naoji Fujimori
IPC分类号： B24B37/04 , C23C16/27 , C23C16/56 , H01L21/306 , H01L21/461 , B24B1/00
CPC分类号： C23C16/56 , B24B37/04 , B24B37/042 , B24B37/107 , B24B37/30 , C23C16/27 , H01L21/02024 , H01L21/30625 , Y10T428/24355 , Y10T428/24975 , Y10T428/30
摘要： A hard material-coated wafer that having a distortable substrate and a hard material film deposited thereon by a CVD method is provided. The substrate is substantially flat while in a free-standing state. However, deposition of the hard material film having a Vickers hardness of more than Hv3000 on the substrate causes the substrate to distort into a generally convex-shape. Specifically, the wafer is distorted to the film side with a distortion height H of -150 .mu.m to -2 .mu.m. The resulting wafer can have a total thickness that ranges from 0.1 mm to 2.1 mm; and a diameter that is bigger than 25 mm. Moreover, more than 50% of the film can be polished to a roughness less than Rmax 50 nm and Ra 20 nm.
摘要翻译：提供了通过CVD方法具有可变形基板和沉积在其上的硬质材料膜的硬质材料涂覆的晶片。在自由状态下，基材基本上是平的。然而，具有维氏硬度大于Hv3000的硬质材料膜在基板上的沉积使得基板变形为大致凸形。具体地说，晶片失真至膜侧，失真高度H为-150μm〜-2μm。所得到的晶片可以具有0.1mm至2.1mm的总厚度; 直径大于25mm。此外，超过50％的膜可以被抛光到小于Rmax 50nm和Ra 20nm的粗糙度。

9. 发明授权

US06428399B1 Polishing apparatus for polishing a hard material-coated wafer 失效
标题翻译：用于抛光硬质材料涂层晶片的抛光装置
公开(公告)号：US06428399B1
公开(公告)日：2002-08-06
申请号：US09572180
申请日：2000-05-16
申请人： Keiichiro Tanabe , Akihoko Ikegaya , Yuichiro Seki , Naoji Fujimori
发明人： Keiichiro Tanabe , Akihoko Ikegaya , Yuichiro Seki , Naoji Fujimori
IPC分类号： B24B704
CPC分类号： C23C16/56 , B24B37/04 , B24B37/042 , B24B37/107 , B24B37/30 , C23C16/27 , H01L21/02024 , H01L21/30625 , Y10T428/24355 , Y10T428/24975 , Y10T428/30
摘要： This polishing apparatus permits for polishing of hard-material coated complex films that traditionally have been difficult to polish due to the hardness of the films, the fragility of the substrate, and the inherent distortion of the film. The polishing apparatus includes a rotary turn-table, a holder for a wafer having the film, a shaft connected to the center of the holder for transmitting rotation and pressure to the holder and permitting the holder to incline, an arm rotatably supporting the holder, a cylinder for applying pressure to the center of the shaft, a driving device for rotating the shaft, and at least one auxiliary shaft. The auxiliary shaft pushes peripheral points along a diameter of the holder in order to impart a swaying motion on the holder.
摘要翻译：这种抛光装置允许抛光由于膜的硬度，基板的脆弱性和薄膜的固有变形而传统上难以抛光的硬质材料涂覆的复合膜。抛光装置包括旋转转台，用于具有薄膜的晶片保持器，连接到保持器的中心的轴，用于将旋转和压力传递到保持器并允许保持器倾斜;可旋转地支撑保持器的臂，用于向轴的中心施加压力的气缸，用于使轴旋转的驱动装置和至少一个辅助轴。辅助轴沿着保持器的直径推动外围点，以便在保持器上施加摆动。

10. 发明授权

US5736226A Wafer and method of producing a wafer 失效
标题翻译：晶片及其制造方法
公开(公告)号：US5736226A
公开(公告)日：1998-04-07
申请号：US480786
申请日：1995-06-07
申请人： Keiichiro Tanabe , Yuichiro Seki , Naoji Fujimori
发明人： Keiichiro Tanabe , Yuichiro Seki , Naoji Fujimori
IPC分类号： C23C16/27 , C23C16/44 , C30B25/02 , C30B25/10 , C30B33/00 , H03H3/08 , H03H9/02 , C23C16/26
CPC分类号： C23C16/279 , C23C16/27 , C30B25/02 , C30B25/105 , C30B29/04 , C30B33/00 , H03H3/08 , H03H9/02582 , Y10T428/24479 , Y10T428/24521 , Y10T428/24612 , Y10T428/24628 , Y10T428/26 , Y10T428/265 , Y10T428/30
摘要： A diamond wafer including a substrate and a (111) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (111) oriented film is produced by supplying a lower carbon concentration gas and a higher carbon concentration gas alternately. The lower carbon concentration means 0% to 1% of the atomic ratio C/H. The higher carbon concentration means 1% to 8% of the atomic ratio C/H. More than 40% of the layered defects of the diamond film are either parallel with or slanting at an angle less than 5 degrees to the surface of the film. The wafer is monotonously distorted with a distortion height H satisfying the inequality 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.
摘要翻译：一种金刚石晶片，包括在用于制造表面声波器件，半导体器件或耐磨盘的衬底上生长的衬底和（111）取向的多晶金刚石膜。通过交替地供给低碳浓度气体和较高碳浓度的气体来制造（111）取向膜。低碳浓度是指原子比C / H的0〜1％。较高的碳浓度是指原子比C / H的1％至8％。超过40％的金刚石薄膜的分层缺陷与薄膜的表面成小于5度的角度平行或倾斜。晶片单调失真，其失真高度H满足不等式2μmm / H |≤150μm。将该膜抛光至小于Rmax50nm和Ra20nm的粗糙度。

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