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1. 发明授权

US5964942A Wafer and method of producing same 失效
标题翻译：晶圆及其制造方法
公开(公告)号：US5964942A
公开(公告)日：1999-10-12
申请号：US494719
申请日：1995-06-26
申请人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Takashi Tsuno
发明人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Takashi Tsuno
IPC分类号： C30B25/02 , C30B29/04
CPC分类号： C30B25/02 , C30B29/04
摘要： No wide bulk diamond wafer exists at present. A wide diamond-coated wafer is proposed instead of the bulk diamond wafer. Diamond is heteroepitaxially deposited on a convex-distorted non-diamond single crystal substrate by a vapor phase deposition method. In an early step, a negative bias is applied to the substrate. In the case of a Si substrate, an intermediate layer of .beta.-SiC is first deposited on the Si substrate by supplying a low carbon concentration material gas. Then the carbon concentration is raised for making a diamond film. The convex-distorted wafer is stuck to a holder having a shaft which is capable of inclining to the holder. The wafer is pushed to a turn-table of a polishing machine. The convex diamond wafer can fully be polished by inclining the holder to the shaft. A wide distorted mirror wafer of diamond is produced. Fine wire patterns can be made on the diamond mirror wafer by the photolithography.
摘要翻译：目前没有宽的大块金刚石晶圆。提出了宽金刚石涂层的晶片代替块状金刚石晶片。通过气相沉积方法将金刚石异质外延沉积在凸变形的非金刚石单晶衬底上。在早期的步骤中，向衬底施加负偏压。在Si衬底的情况下，通过提供低碳浓度的材料气体，首先在Si衬底上沉积β-SiC的中间层。然后提高碳浓度以制备金刚石膜。凸起变形的晶片粘附到具有能够倾斜到保持器的轴的保持器上。将晶片推到抛光机的转台上。通过将支架倾斜到轴上，可以完全抛光凸面金刚石晶片。产生了一个宽扭曲的金刚石镜面晶圆。可以通过光刻在金刚石镜晶片上形成细线图案。

2. 发明授权

US6051063A Diamond wafer and method of producing a diamond wafer 失效
标题翻译：金刚石晶片及其制造方法
公开(公告)号：US6051063A
公开(公告)日：2000-04-18
申请号：US975254
申请日：1997-11-21
申请人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
发明人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
IPC分类号： C23C16/27 , C30B25/02 , H03H3/08 , H03H9/02 , C30B29/04
CPC分类号： C23C16/279 , C23C16/27 , C30B25/02 , C30B29/04 , H03H3/08 , H03H9/02582
摘要： A diamond wafer including a substrate and a (100) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (100) oriented film is produced by changing a hydrocarbon ratio in a material gas halfway from a higher value to a lower value. The wafer is monotonously distorted with a distortion height H satisfying 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.
摘要翻译：一种金刚石晶片，其包括在基板上生长的用于制造表面声波装置，半导体装置或耐磨盘的基板和（100）定向多晶金刚石膜。通过将材料气体中的烃比率从较高值改变为较低值来生产（100）取向膜。晶片单调失真，失真高度H满足2微米

3. 发明授权

US5776246A Diamond wafer and method of producing a diamond wafer 失效
公开(公告)号：US5776246A
公开(公告)日：1998-07-07
申请号：US418116
申请日：1995-04-06
申请人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
发明人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
IPC分类号： C23C16/27 , C30B25/02 , H03H3/08 , H03H9/02 , C30B29/04
CPC分类号： C23C16/279 , C23C16/27 , C30B25/02 , C30B29/04 , H03H3/08 , H03H9/02582
摘要： A diamond wafer including a substrate and a (100) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (100) oriented film is produced by changing a hydrocarbon ratio in a material gas halfway from a higher value to a lower value. The wafer is monotonously distorted with a distortion height H satisfying 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.

4. 发明授权

US5370299A Bonding tool having diamond head and method of manufacturing the same 失效
标题翻译：具有金刚石头的接合工具及其制造方法
公开(公告)号：US5370299A
公开(公告)日：1994-12-06
申请号：US41545
申请日：1993-04-02
申请人： Keiichiro Tanabe , Toshiya Takahashi , Akihiko Ikegaya , Naoji Fujimori
发明人： Keiichiro Tanabe , Toshiya Takahashi , Akihiko Ikegaya , Naoji Fujimori
IPC分类号： B23K20/02 , C04B41/50 , C04B41/85 , H05K13/00 , H01L21/58
CPC分类号： C04B41/009 , B23K20/025 , C04B41/5002 , C04B41/85 , H01L24/79 , H05K13/003
摘要： A bonding tool has a head portion made essentially of vapor-deposited diamond, wherein a principal diamond crystal plane forming a head face is a (111) plane. Such a head face has high hardness and a good wear resistance. In order to improve the toughness of a bonding head which is mainly made of vapor-deposited diamond, a portion or ply forming the head face consists essentially of high-purity diamond, and another portion or ply supporting the head face consists essentially of low-purity diamond. The head face has a high rigidity, while the portion supporting the head face has a high toughness. In order to provide a bonding head portion which is mainly made of vapor-deposited diamond with electrical conductivity, a first portion or ply forming a head face consists essentially of polycrystalline diamond containing a relatively small amount of dopant, and another portion or ply supporting the first portion or ply contains a large amount of dopant. The head portion having electrical conductivity can be heated by energization. In a tool employing a coating containing vapor-deposited diamond as a bonding head portion, the coating is formed by a compound of a metal or ceramics and vapor-deposited diamond, in order to improve the strength of the coating and adhesion to a tool substrate.
摘要翻译：接合工具具有基本上由气相沉积金刚石制成的头部，其中形成头部面的主要金刚石晶体平面是（111）面。这种头面具有高硬度和良好的耐磨性。为了提高主要由气相沉积金刚石制成的接合头的韧性，形成头部面的部分或层基本上由高纯度的金刚石组成，并且支撑头部面的另一部分或层基本上由低熔点金刚石构成，纯度钻石。头部表面具有高刚性，而支撑头部面的部分具有高韧性。为了提供主要由具有导电性的气相沉积金刚石制成的接合头部分，形成头部面的第一部分或第一部分基本上由含有相对少量掺杂剂的多晶金刚石组成，另一部分或层叠支撑第一部分或第二部分含有大量的掺杂剂。可以通过通电来加热具有导电性的头部。在使用包含气相沉积金刚石作为粘合头部分的涂层的工具中，涂层由金属或陶瓷和气相沉积金刚石的化合物形成，以便提高涂层的强度和对工具基材的粘附。

5. 发明授权

US5516027A Bonding tool having a diamond head and method of manufacturing the same 失效
标题翻译：具有金刚石头的接合工具及其制造方法
公开(公告)号：US5516027A
公开(公告)日：1996-05-14
申请号：US309842
申请日：1994-09-20
申请人： Keiichiro Tanabe , Toshiya Takahashi , Akihiko Ikegaya , Naoji Fujimori
发明人： Keiichiro Tanabe , Toshiya Takahashi , Akihiko Ikegaya , Naoji Fujimori
IPC分类号： B23K20/02 , C04B41/50 , C04B41/85 , H05K13/00 , H01L21/58
CPC分类号： C04B41/009 , B23K20/025 , C04B41/5002 , C04B41/85 , H01L24/79 , H05K13/003
摘要： A bonding tool has a head portion made essentially of vapor-deposited diamond, wherein a principal diamond crystal plane forming a head face is a (111) plane. Such a head face has high hardness and a good wear resistance. In order to improve the toughness of a bonding head which is mainly made of vapor-deposited diamond, a portion or ply forming the head face consists essentially of high-purity diamond, and another portion or ply supporting the head face consists essentially of low-purity diamond. The head face has a high rigidity, while the portion supporting the head face has a high toughness. In order to provide a bonding head portion which is mainly made of vapor-deposited diamond with electrical conductivity, a first portion or ply forming a head face consists essentially of polycrystalline diamond containing a relatively small amount of dopant, and another portion or ply supporting the first portion or ply contains a large amount of dopant. The head portion having electrical conductivity can be heated by energization. In a tool employing a coating containing vapor-deposited diamond as a bonding head portion, the coating is formed by a compound of a metal or ceramics and vapor-deposited diamond, in order to improve the strength of the coating and adhesion to a tool substrate.
摘要翻译：接合工具具有基本上由气相沉积金刚石制成的头部，其中形成头部面的主要金刚石晶体平面是（111）面。这种头面具有高硬度和良好的耐磨性。为了提高主要由气相沉积金刚石制成的接合头的韧性，形成头部面的部分或层基本上由高纯度的金刚石组成，并且支撑头部面的另一部分或层基本上由低熔点金刚石构成，纯度钻石。头部表面具有高刚性，而支撑头部面的部分具有高韧性。为了提供主要由具有导电性的气相沉积金刚石制成的接合头部分，形成头部面的第一部分或第一部分基本上由含有相对少量掺杂剂的多晶金刚石组成，另一部分或层叠支撑第一部分或第二部分含有大量的掺杂剂。可以通过通电来加热具有导电性的头部。在使用包含气相沉积金刚石作为粘合头部分的涂层的工具中，涂层由金属或陶瓷和气相沉积金刚石的化合物形成，以便提高涂层的强度和对工具基材的粘附。

6. 发明授权

US5435815A Cutting tool employing vapor-deposited polycrystalline diamond for cutting edge and method of manufacturing the same 失效
标题翻译：使用气相沉积多晶金刚石切割刃的切割工具及其制造方法
公开(公告)号：US5435815A
公开(公告)日：1995-07-25
申请号：US84298
申请日：1993-06-29
申请人： Akihiko Ikegaya , Keiichiro Tanabe , Toshiya Takahashi , Naoji Fujimori
发明人： Akihiko Ikegaya , Keiichiro Tanabe , Toshiya Takahashi , Naoji Fujimori
IPC分类号： B23P15/28 , C23C16/01 , C23C16/27 , C23C28/00 , C23C30/00 , B24D11/00
CPC分类号： C23C16/278 , B23P15/28 , C23C16/01 , C23C16/271 , C23C16/276 , C23C28/04 , C23C28/044 , C23C28/048 , C23C30/005
摘要： A diamond cutting tool has a tool substrate and a cutting edge member. The cutting edge member is formed of a material having a three-layer structure or a diamond composite material. When the material having a three-layer structure is employed, the cutting edge member is formed by a vapor-deposited diamond layer defining a rake face, a layer of a composite material of vapor-deposited diamond and a metal or ceramics, and a layer of the metal or ceramics. The metal is prepared from Mo, W, Cr, V, Nb, Ta, Co, Ni or Fe, while the ceramics is prepared from cBN, SiC, Si.sub.3 N.sub.4, WC, TiC, TaC, NbC, Cr.sub.3 C.sub.2, Mo.sub.2 C, VC, TiN or BN. The cutting edge member is brazed to the tool substrate through the metal or ceramics layer. When the diamond composite material is employed, on the other hand, the cutting edge member is formed of a composite material of particles or fibers of AlN, cBN or SiC and vapor-deposited diamond. The diamond cutting tool is excellent in heat resistance and durability.
摘要翻译：金刚石切削工具具有工具基板和切削刃部件。切削刃部件由具有三层结构的材料或金刚石复合材料形成。当采用具有三层结构的材料时，切割边缘部件由形成前刀面的气相沉积金刚石层，气相沉积金刚石和金属或陶瓷的复合材料层以及层的金属或陶瓷。该金属由Mo，W，Cr，V，Nb，Ta，Co，Ni或Fe制成，而陶瓷由cBN，SiC，Si3N4，WC，TiC，TaC，NbC，Cr3C2，Mo2C，VC，TiN 或BN。切削刃部件通过金属或陶瓷层钎焊到工具基板上。另一方面，当使用金刚石复合材料时，切削刃部件由AlN，cBN或SiC的颗粒或纤维的复合材料和气相沉积金刚石形成。金刚石切割工具耐热性和耐久性优异。

7. 发明授权

US5759667A Diamond wire drawing die and process for manufacturing same 失效
标题翻译：金刚石拉丝模及其制造方法
公开(公告)号：US5759667A
公开(公告)日：1998-06-02
申请号：US831141
申请日：1997-04-01
申请人： Toshiya Takahashi , Akihiko Ikegaya , Keiichiro Tanabe , Naoji Fujimori
发明人： Toshiya Takahashi , Akihiko Ikegaya , Keiichiro Tanabe , Naoji Fujimori
IPC分类号： B21C3/02 , C23C16/01 , C23C16/27
CPC分类号： C23C16/01 , B21C3/02 , B21C3/025 , C23C16/27 , C23C16/271 , Y10T428/24273 , Y10T428/24281 , Y10T428/24942 , Y10T428/30
摘要： A wire drawing die comprises first and second polycrystalline diamond layers made of gaseous phase synthesized diamond. The finest diamond particles of the diamond layers are made into the wire contact portion of the die.
摘要翻译：拉丝模具包括由气相合成金刚石制成的第一和第二多晶金刚石层。金刚石层的最好的金刚石颗粒被制成模具的导线接触部分。

8. 发明授权

US5587013A Methods of synthesizing and polishing a flat diamond film and free-standing diamond film 失效
标题翻译：合成和抛光平面金刚石薄膜和独立金刚石薄膜的方法
公开(公告)号：US5587013A
公开(公告)日：1996-12-24
申请号：US379692
申请日：1995-01-27
申请人： Akihiko Ikegaya , Keiichiro Tanabe , Naoji Fujimori
发明人： Akihiko Ikegaya , Keiichiro Tanabe , Naoji Fujimori
IPC分类号： C30B29/04 , B24B9/16 , C23C16/01 , C23C16/26 , C23C16/27 , H01L21/205
CPC分类号： C23C16/279 , B24B9/16 , C23C16/27 , C23C16/271
摘要： A flat free-standing diamond film is produced by growing alternately at least one pair of a potential-concave diamond layer and a potential-convex diamond layer on a non-diamond substrate and eliminating the substrate. The potential-concave films are made by a CVD method under a condition (b), which is characterized by of a substrate temperature of 880.degree. C. to 950.degree. C. and a hydrocarbon ratio of 2.5 vol % to 3.5 vol %. The potential-convex films are made by a CVD method under the condition (a) which is charcterized by of a substrate temperature of 800.degree. C. to 850.degree. C. and a hydrocarbon ratio of 0.5 vol % to 1.5 vol %. The condition (a) can make a potential-convex film of a good crystal quality in spite of a slow deposition speed. It is preferable to employ an assembly of thinner potential-convex films and thicker potential-concave films to curtail the total time of synthesis. A multilayered diamond film with an arbitrary curvature can be produced by selecting the production conditions (a) and (b), and the thicknesses of the potential-convex layers and the potential-concave layers.The diamond films still fixed on the substrate can be polished by an ordinary polishing apparatus, since the film is flat. A polished flat diamond film can be obtained by eliminating the substrate.
摘要翻译：通过在非金刚石基底上交替生长至少一对电位 - 凹金刚石层和潜在 - 凸出的金刚石层并消除基底来制造平坦独立的金刚石膜。在（b）条件下通过CVD法制造电位凹形膜，其特征在于基板温度为880℃至950℃，烃比为2.5vol％至3.5vol％。在由800〜850℃的基板温度和0.5vol％〜1.5vol％的烃比率表征的条件（a）下，通过CVD法制造电位凸膜。条件（a）尽管沉积速度慢，但也可以制成具有良好晶体质量的电势凸膜。优选使用较薄的电势凸起膜和较厚的电势 - 凹膜的组合来缩短总合成时间。可以通过选择生产条件（a）和（b）以及电位 - 凸层和电位 - 凹陷层的厚度来制造具有任意曲率的多层金刚石薄膜。仍然固定在基板上的金刚石膜可以由普通的抛光装置抛光，因为该膜是平的。抛光的平面金刚石薄膜可以通过消除基底来获得。

9. 发明授权

US5567522A Diamond cutting tool and method of manufacturing the same 失效
标题翻译：金刚石切割工具及其制造方法
公开(公告)号：US5567522A
公开(公告)日：1996-10-22
申请号：US318188
申请日：1994-10-05
申请人： Keiichiro Tanabe , Akihiko Ikegaya , Toshiya Takahashi , Naoji Fujimori
发明人： Keiichiro Tanabe , Akihiko Ikegaya , Toshiya Takahashi , Naoji Fujimori
IPC分类号： B23B27/20 , C23C16/01 , C23C16/02 , C23C16/27 , B24D3/00
CPC分类号： C23C16/01 , B23B27/20 , C23C16/0254 , C23C16/27 , Y10T428/24355 , Y10T428/24413 , Y10T428/30 , Y10T428/31678
摘要： A diamond cutting tool has a rake face (5) of a cutting edge member (2) consisting essentially of a (111) plane of diamond. The cutting edge member (2) of diamond is vapor-deposited by CVD or the like on an independently prepared base material. In this vapor deposition, the diamond is deposited while controlling and periodically varying the carbon to hydrogen ratio of the supplied raw material gas, in such a manner that a (111) crystal plane is oriented with a prescribed fluctuation or non-uniformity, but is substantially parallel to the base material surface. The as-formed diamond material is separated from the base material and cut into a desired shape, and then bonded as a cutting edge member (2) to a tool base (1) through a metallization layer (4) and a brazing layer (3), in such an orientation that the (111) plane defines the rake face (5). The tool having such a rake face (5) consisting essentially of the (111) plane, with a prescribed fluctuation of its orientation, is excellent in wear resistance and is resistant to cleavage damage.
摘要翻译：金刚石切割工具具有基本上由（111）钻石平面组成的切削刃部件（2）的前刀面（5）。通过CVD等将金刚石的切削刃部件（2）以独立制备的基材气相沉积。在这种气相沉积中，以（111）晶面以规定的波动或非均匀性取向的方式，控制和周期性地改变供给的原料气体的碳/氢比，沉积金刚石，但是基本平行于基材表面。将形成的金刚石材料与基材分离并切割成所需的形状，然后通过金属化层（4）和钎焊层（3）作为切割边缘部件（2）粘合到工具基体（1）），以（111）面限定前刀面（5）的方向。具有基本上由（111）面形成的具有规定的取向波动的这样的前刀面（5）的刀具具有优异的耐磨性并且耐裂纹损伤。

10. 发明授权

US06193585B1 Method of polishing a hard material-coated wafer 失效
标题翻译：抛光硬质材料涂层晶片的方法
公开(公告)号：US06193585B1
公开(公告)日：2001-02-27
申请号：US09048291
申请日：1998-03-26
申请人： Keiichiro Tanabe , Akihoko Ikegaya , Yuichiro Seki , Naoji Fujimori
发明人： Keiichiro Tanabe , Akihoko Ikegaya , Yuichiro Seki , Naoji Fujimori
IPC分类号： B24B100
CPC分类号： C23C16/56 , B24B37/04 , B24B37/042 , B24B37/107 , B24B37/30 , C23C16/27 , H01L21/02024 , H01L21/30625 , Y10T428/24355 , Y10T428/24975 , Y10T428/30
摘要： A method of producing and polishing a hard-material-coated wafer. A hard-material film is disposed on a substrate to form the wafer and provide the wafer with a convex shape. A surface of the substrate is fixed on a holder of a polishing machine having a whetstone turn-table. The holder is rotated about its axis, and the whetstone turn-table is revolved about its shaft. The convex film surface of the hard-material film is polished on the whetstone turn-table while the inclination angle of the holder relative to the turn-table is changed. In this way, the convex film surface is polished either from its center to its periphery or from its periphery to its center.
摘要翻译：一种生产和抛光硬质材料涂层晶片的方法。将硬质材料膜设置在基板上以形成晶片并为晶片提供凸形。基板的表面固定在具有砂轮转台的抛光机的支架上。保持器围绕其轴线旋转，并且砂轮转台围绕其轴旋转。在砂轮转台上抛光硬质材料膜的凸形膜表面，同时保持器相对于转台的倾斜角度改变。以这种方式，凸面膜表面从其中心到其周边或从其周边到其中心被抛光。

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