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1. 发明授权

US5855998A Hard material-coated wafer, method of making same, polishing apparatus and polishing method of hard material-coated wafer 失效
标题翻译：硬质材料涂层晶片，其制造方法，抛光装置和硬质材料涂层晶片的抛光方法
公开(公告)号：US5855998A
公开(公告)日：1999-01-05
申请号：US874536
申请日：1997-06-13
申请人： Keiichiro Tanabe , Akihoko Ikegaya , Yuichiro Seki , Naoji Fujimori
发明人： Keiichiro Tanabe , Akihoko Ikegaya , Yuichiro Seki , Naoji Fujimori
IPC分类号： B24B37/04 , C23C16/27 , C23C16/56 , H01L21/306 , H01L21/461 , B24B1/00
CPC分类号： C23C16/56 , B24B37/04 , B24B37/042 , B24B37/107 , B24B37/30 , C23C16/27 , H01L21/02024 , H01L21/30625 , Y10T428/24355 , Y10T428/24975 , Y10T428/30
摘要： A hard material-coated wafer that having a distortable substrate and a hard material film deposited thereon by a CVD method is provided. The substrate is substantially flat while in a free-standing state. However, deposition of the hard material film having a Vickers hardness of more than Hv3000 on the substrate causes the substrate to distort into a generally convex-shape. Specifically, the wafer is distorted to the film side with a distortion height H of -150 .mu.m to -2 .mu.m. The resulting wafer can have a total thickness that ranges from 0.1 mm to 2.1 mm; and a diameter that is bigger than 25 mm. Moreover, more than 50% of the film can be polished to a roughness less than Rmax 50 nm and Ra 20 nm.
摘要翻译：提供了通过CVD方法具有可变形基板和沉积在其上的硬质材料膜的硬质材料涂覆的晶片。在自由状态下，基材基本上是平的。然而，具有维氏硬度大于Hv3000的硬质材料膜在基板上的沉积使得基板变形为大致凸形。具体地说，晶片失真至膜侧，失真高度H为-150μm〜-2μm。所得到的晶片可以具有0.1mm至2.1mm的总厚度; 直径大于25mm。此外，超过50％的膜可以被抛光到小于Rmax 50nm和Ra 20nm的粗糙度。

2. 发明授权

US06428399B1 Polishing apparatus for polishing a hard material-coated wafer 失效
标题翻译：用于抛光硬质材料涂层晶片的抛光装置
公开(公告)号：US06428399B1
公开(公告)日：2002-08-06
申请号：US09572180
申请日：2000-05-16
申请人： Keiichiro Tanabe , Akihoko Ikegaya , Yuichiro Seki , Naoji Fujimori
发明人： Keiichiro Tanabe , Akihoko Ikegaya , Yuichiro Seki , Naoji Fujimori
IPC分类号： B24B704
CPC分类号： C23C16/56 , B24B37/04 , B24B37/042 , B24B37/107 , B24B37/30 , C23C16/27 , H01L21/02024 , H01L21/30625 , Y10T428/24355 , Y10T428/24975 , Y10T428/30
摘要： This polishing apparatus permits for polishing of hard-material coated complex films that traditionally have been difficult to polish due to the hardness of the films, the fragility of the substrate, and the inherent distortion of the film. The polishing apparatus includes a rotary turn-table, a holder for a wafer having the film, a shaft connected to the center of the holder for transmitting rotation and pressure to the holder and permitting the holder to incline, an arm rotatably supporting the holder, a cylinder for applying pressure to the center of the shaft, a driving device for rotating the shaft, and at least one auxiliary shaft. The auxiliary shaft pushes peripheral points along a diameter of the holder in order to impart a swaying motion on the holder.
摘要翻译：这种抛光装置允许抛光由于膜的硬度，基板的脆弱性和薄膜的固有变形而传统上难以抛光的硬质材料涂覆的复合膜。抛光装置包括旋转转台，用于具有薄膜的晶片保持器，连接到保持器的中心的轴，用于将旋转和压力传递到保持器并允许保持器倾斜;可旋转地支撑保持器的臂，用于向轴的中心施加压力的气缸，用于使轴旋转的驱动装置和至少一个辅助轴。辅助轴沿着保持器的直径推动外围点，以便在保持器上施加摆动。

3. 发明授权

US06193585B1 Method of polishing a hard material-coated wafer 失效
标题翻译：抛光硬质材料涂层晶片的方法
公开(公告)号：US06193585B1
公开(公告)日：2001-02-27
申请号：US09048291
申请日：1998-03-26
申请人： Keiichiro Tanabe , Akihoko Ikegaya , Yuichiro Seki , Naoji Fujimori
发明人： Keiichiro Tanabe , Akihoko Ikegaya , Yuichiro Seki , Naoji Fujimori
IPC分类号： B24B100
CPC分类号： C23C16/56 , B24B37/04 , B24B37/042 , B24B37/107 , B24B37/30 , C23C16/27 , H01L21/02024 , H01L21/30625 , Y10T428/24355 , Y10T428/24975 , Y10T428/30
摘要： A method of producing and polishing a hard-material-coated wafer. A hard-material film is disposed on a substrate to form the wafer and provide the wafer with a convex shape. A surface of the substrate is fixed on a holder of a polishing machine having a whetstone turn-table. The holder is rotated about its axis, and the whetstone turn-table is revolved about its shaft. The convex film surface of the hard-material film is polished on the whetstone turn-table while the inclination angle of the holder relative to the turn-table is changed. In this way, the convex film surface is polished either from its center to its periphery or from its periphery to its center.
摘要翻译：一种生产和抛光硬质材料涂层晶片的方法。将硬质材料膜设置在基板上以形成晶片并为晶片提供凸形。基板的表面固定在具有砂轮转台的抛光机的支架上。保持器围绕其轴线旋转，并且砂轮转台围绕其轴旋转。在砂轮转台上抛光硬质材料膜的凸形膜表面，同时保持器相对于转台的倾斜角度改变。以这种方式，凸面膜表面从其中心到其周边或从其周边到其中心被抛光。

4. 发明授权

US5964942A Wafer and method of producing same 失效
标题翻译：晶圆及其制造方法
公开(公告)号：US5964942A
公开(公告)日：1999-10-12
申请号：US494719
申请日：1995-06-26
申请人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Takashi Tsuno
发明人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Takashi Tsuno
IPC分类号： C30B25/02 , C30B29/04
CPC分类号： C30B25/02 , C30B29/04
摘要： No wide bulk diamond wafer exists at present. A wide diamond-coated wafer is proposed instead of the bulk diamond wafer. Diamond is heteroepitaxially deposited on a convex-distorted non-diamond single crystal substrate by a vapor phase deposition method. In an early step, a negative bias is applied to the substrate. In the case of a Si substrate, an intermediate layer of .beta.-SiC is first deposited on the Si substrate by supplying a low carbon concentration material gas. Then the carbon concentration is raised for making a diamond film. The convex-distorted wafer is stuck to a holder having a shaft which is capable of inclining to the holder. The wafer is pushed to a turn-table of a polishing machine. The convex diamond wafer can fully be polished by inclining the holder to the shaft. A wide distorted mirror wafer of diamond is produced. Fine wire patterns can be made on the diamond mirror wafer by the photolithography.
摘要翻译：目前没有宽的大块金刚石晶圆。提出了宽金刚石涂层的晶片代替块状金刚石晶片。通过气相沉积方法将金刚石异质外延沉积在凸变形的非金刚石单晶衬底上。在早期的步骤中，向衬底施加负偏压。在Si衬底的情况下，通过提供低碳浓度的材料气体，首先在Si衬底上沉积β-SiC的中间层。然后提高碳浓度以制备金刚石膜。凸起变形的晶片粘附到具有能够倾斜到保持器的轴的保持器上。将晶片推到抛光机的转台上。通过将支架倾斜到轴上，可以完全抛光凸面金刚石晶片。产生了一个宽扭曲的金刚石镜面晶圆。可以通过光刻在金刚石镜晶片上形成细线图案。

5. 发明授权

US5874130A Wafer and method of producing a wafer 失效
标题翻译：晶片及其制造方法
公开(公告)号：US5874130A
公开(公告)日：1999-02-23
申请号：US942294
申请日：1997-10-01
申请人： Keiichiro Tanabe , Yuichiro Seki , Naoji Fujimori
发明人： Keiichiro Tanabe , Yuichiro Seki , Naoji Fujimori
IPC分类号： C23C16/27 , C23C16/44 , C30B25/02 , C30B25/10 , C30B33/00 , H03H3/08 , H03H9/02 , H01L21/461 , B24B1/00 , C30B25/14
CPC分类号： C23C16/279 , C23C16/27 , C30B25/02 , C30B25/105 , C30B29/04 , C30B33/00 , H03H3/08 , H03H9/02582 , Y10T428/24479 , Y10T428/24521 , Y10T428/24612 , Y10T428/24628 , Y10T428/26 , Y10T428/265 , Y10T428/30
摘要： A diamond wafer including a substrate and a (111) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (111) oriented film is produced by supplying a lower carbon concentration gas and a higher carbon concentration gas alternately. The lower carbon concentration means 0% to 1% of the atomic ratio C/H. The higher carbon concentration means 1% to 8% of the atomic ratio C/H. More than 40% of layered defects are either parallel with or slanting at an angle less than 5 degrees to the surface. The wafer is monotonously distorted with a distortion height H satisfying 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.
摘要翻译：一种金刚石晶片，包括在用于制造表面声波器件，半导体器件或耐磨盘的衬底上生长的衬底和（111）取向的多晶金刚石膜。通过交替地供给低碳浓度气体和较高碳浓度的气体来制造（111）取向膜。低碳浓度是指原子比C / H的0〜1％。较高的碳浓度是指原子比C / H的1％至8％。超过40％的分层缺陷是以与表面小于5度的角度平行或倾斜。晶片单调失真，失真高度H满足2微米

6. 发明授权

US6051063A Diamond wafer and method of producing a diamond wafer 失效
标题翻译：金刚石晶片及其制造方法
公开(公告)号：US6051063A
公开(公告)日：2000-04-18
申请号：US975254
申请日：1997-11-21
申请人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
发明人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
IPC分类号： C23C16/27 , C30B25/02 , H03H3/08 , H03H9/02 , C30B29/04
CPC分类号： C23C16/279 , C23C16/27 , C30B25/02 , C30B29/04 , H03H3/08 , H03H9/02582
摘要： A diamond wafer including a substrate and a (100) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (100) oriented film is produced by changing a hydrocarbon ratio in a material gas halfway from a higher value to a lower value. The wafer is monotonously distorted with a distortion height H satisfying 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.
摘要翻译：一种金刚石晶片，其包括在基板上生长的用于制造表面声波装置，半导体装置或耐磨盘的基板和（100）定向多晶金刚石膜。通过将材料气体中的烃比率从较高值改变为较低值来生产（100）取向膜。晶片单调失真，失真高度H满足2微米

7. 发明授权

US5776246A Diamond wafer and method of producing a diamond wafer 失效
公开(公告)号：US5776246A
公开(公告)日：1998-07-07
申请号：US418116
申请日：1995-04-06
申请人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
发明人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
IPC分类号： C23C16/27 , C30B25/02 , H03H3/08 , H03H9/02 , C30B29/04
CPC分类号： C23C16/279 , C23C16/27 , C30B25/02 , C30B29/04 , H03H3/08 , H03H9/02582
摘要： A diamond wafer including a substrate and a (100) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (100) oriented film is produced by changing a hydrocarbon ratio in a material gas halfway from a higher value to a lower value. The wafer is monotonously distorted with a distortion height H satisfying 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.

8. 发明授权

US5736226A Wafer and method of producing a wafer 失效
标题翻译：晶片及其制造方法
公开(公告)号：US5736226A
公开(公告)日：1998-04-07
申请号：US480786
申请日：1995-06-07
申请人： Keiichiro Tanabe , Yuichiro Seki , Naoji Fujimori
发明人： Keiichiro Tanabe , Yuichiro Seki , Naoji Fujimori
IPC分类号： C23C16/27 , C23C16/44 , C30B25/02 , C30B25/10 , C30B33/00 , H03H3/08 , H03H9/02 , C23C16/26
CPC分类号： C23C16/279 , C23C16/27 , C30B25/02 , C30B25/105 , C30B29/04 , C30B33/00 , H03H3/08 , H03H9/02582 , Y10T428/24479 , Y10T428/24521 , Y10T428/24612 , Y10T428/24628 , Y10T428/26 , Y10T428/265 , Y10T428/30
摘要： A diamond wafer including a substrate and a (111) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (111) oriented film is produced by supplying a lower carbon concentration gas and a higher carbon concentration gas alternately. The lower carbon concentration means 0% to 1% of the atomic ratio C/H. The higher carbon concentration means 1% to 8% of the atomic ratio C/H. More than 40% of the layered defects of the diamond film are either parallel with or slanting at an angle less than 5 degrees to the surface of the film. The wafer is monotonously distorted with a distortion height H satisfying the inequality 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.
摘要翻译：一种金刚石晶片，包括在用于制造表面声波器件，半导体器件或耐磨盘的衬底上生长的衬底和（111）取向的多晶金刚石膜。通过交替地供给低碳浓度气体和较高碳浓度的气体来制造（111）取向膜。低碳浓度是指原子比C / H的0〜1％。较高的碳浓度是指原子比C / H的1％至8％。超过40％的金刚石薄膜的分层缺陷与薄膜的表面成小于5度的角度平行或倾斜。晶片单调失真，其失真高度H满足不等式2μmm / H |≤150μm。将该膜抛光至小于Rmax50nm和Ra20nm的粗糙度。

9. 发明申请

US20060144702A1 Diamond-coated electrode and method for producing same 有权
标题翻译：金刚石涂层电极及其制造方法
公开(公告)号：US20060144702A1
公开(公告)日：2006-07-06
申请号：US10547381
申请日：2004-05-25
申请人： Yuichiro Seki , Kenji Izumi , Takahiro Imai
发明人： Yuichiro Seki , Kenji Izumi , Takahiro Imai
IPC分类号： C25C7/02 , C25B11/12 , C23C16/26 , B32B9/00 , B32B19/00
CPC分类号： C02F1/46109 , C02F2001/46133 , C02F2001/46138 , C25B11/0442 , Y10T428/30
摘要： A diamond electrode having a sufficiently low resistance is disclosed which is realized by increasing the amount of boron added thereto. A method for producing a high-performance, high-durability electrode is also disclosed by which adhesiveness between a diamond coating and a substrate and separation resistance during electrolysis are sufficiently increased. An electrode composed of a substrate and a diamond layer coating the substrate is characterized in that the electrode is composed of a base coated with diamond and the diamond contains boron in such an amount that the boron concentration is not less than 10,000 ppm but not more than 100,000 ppm. The base is preferably made of an insulating material.
摘要翻译：公开了具有足够低电阻的金刚石电极，其通过增加添加到其中的硼的量来实现。还公开了一种用于制造高性能，高耐久性电极的方法，其中金刚石涂层和基板之间的粘合性以及电解过程中的分离电阻充分增加。由基材和涂覆基材的金刚石层组成的电极的特征在于，电极由涂有金刚石的基底组成，金刚石含有硼，其含量不低于10,000ppm但不大于 100,000 ppm。基部优选由绝缘材料制成。

10. 发明申请

US20060105173A1 Diamond-coated porous substrate and liquid treatment apparatus and liquid treatment method using same 审中-公开
标题翻译：金刚石涂层多孔基材和液体处理装置及液体处理方法相同
公开(公告)号：US20060105173A1
公开(公告)日：2006-05-18
申请号：US11267326
申请日：2005-11-07
申请人： Yuichiro Seki , Kenji Izumi , Takahiro Imai
发明人： Yuichiro Seki , Kenji Izumi , Takahiro Imai
IPC分类号： B32B3/00 , B32B9/00
CPC分类号： C04B41/009 , B01D39/2027 , B01D39/2068 , B01D2239/0241 , B01D2239/0478 , B01D2239/1216 , C02F1/001 , C02F1/4672 , C02F2001/46138 , C02F2001/46161 , C02F2101/30 , C02F2201/4613 , C04B41/5002 , C04B41/85 , C04B2111/00793 , C04B2111/00853 , Y10T428/249967 , Y10T428/249969 , Y10T428/24997 , Y10T428/30 , C04B41/4531 , C04B35/10 , C04B35/14 , C04B35/185 , C04B35/565 , C04B35/584 , C04B35/581 , C04B38/00
摘要： The object of the invention is to provide a porous composite substrate with excellent durability, which can be physically or chemically stable and can be used in severe environment, by providing a coating layer with high corrosion resistance and insulating properties or good electric conductivity if required, on a porous base material having open pores and a filtration function, and to use this porous composite substrate effectively as filters and field electrodes for water treatment or the like. The present invention is a porous composite substrate comprising a composite member, the composite member comprising a porous base material and a diamond layer which covers the porous base material, wherein the porous base material and the composite member have open pores to serve a filtration function. The porous base material is an insulator, a semiconductor, or a metal.
摘要翻译：本发明的目的是提供具有优异的耐久性的多孔复合基材，其可以物理或化学稳定并且可以在恶劣的环境中使用，通过提供具有高耐蚀性和绝缘性能的涂层或者如果需要，具有良好的导电性，在具有开孔和过滤功能的多孔基材上，有效地使用该多孔复合基材作为水处理等的过滤器和场电极。本发明是一种多孔复合基材，其包含复合构件，所述复合构件包括多孔基材和覆盖所述多孔基材的金刚石层，其中所述多孔基材和所述复合构件具有开孔以用作过滤功能。多孔基材是绝缘体，半导体或金属。

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