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1. 发明授权

US5959389A Diamond-ZnO surface acoustic wave device 失效
标题翻译：金刚石 - ZnO表面声波装置
公开(公告)号：US5959389A
公开(公告)日：1999-09-28
申请号：US964469
申请日：1997-11-04
申请人： Hideaki Nakahata , Tomoki Uemura , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
发明人： Hideaki Nakahata , Tomoki Uemura , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
IPC分类号： H03H9/02 , H03H9/10 , H03H9/145
CPC分类号： H03H9/02582
摘要： A first surface acoustic wave device for 2nd mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention is a SAW device of "type A" device shown in FIG. 6A, wherein a parameter kh3=2.pi.(t.sub.A /.lambda.) is: 0.033.ltoreq.kh3.ltoreq.0.099, and wherein a parameter kh1=2.pi.(t.sub.Z /.lambda.) and a parameter kh2=2.pi.(t.sub.S /.lambda.) are given within a region ABCDEFGHIJKLA in a two-dimensional Cartesin coordinate graph of FIG. 1.
摘要翻译：根据本发明的波长λ（μm）的第二模式表面声波的第一表面声波装置是图1所示的“A型”装置的SAW装置。其中参数kh3 =2π（tA /λ）为：0.033≤kh3

2. 发明授权

US5891519A Surface acoustic wave device and diamond base material for the same 失效
标题翻译：表面声波装置和金刚石基材相同
公开(公告)号：US5891519A
公开(公告)日：1999-04-06
申请号：US839606
申请日：1997-04-15
申请人： Shin-ichi Shikata , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo
发明人： Shin-ichi Shikata , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo
IPC分类号： H03H3/08 , H03H9/02 , H03H9/145 , H03H9/25 , H03H9/64
CPC分类号： H03H9/6436 , H03H3/08 , H03H9/02582 , H03H9/6433 , H03H9/6466 , Y10T428/24802 , Y10T428/24926 , Y10T428/24942 , Y10T428/24975 , Y10T428/265 , Y10T428/30
摘要： A diamond base material for surface acoustic wave device, which includes: a low-resistivity base material, and a high-resistivity diamond layer having a thickness of 5-50 .mu.m disposed on the low-resistivity base material.
摘要翻译：一种用于表面声波装置的金刚石基材，其包括：低电阻率基材和设置在低电阻率基材上的厚度为5-50μm的高电阻金刚石层。

3. 发明授权

US5888646A Surface acoustic wave device 失效
标题翻译：表面声波装置
公开(公告)号：US5888646A
公开(公告)日：1999-03-30
申请号：US808956
申请日：1997-02-19
申请人： Yoshihiro Takahashi , Yasushi Yamamoto , Natsuhiko Sakairi , Shin-Ichi Shikata , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi
发明人： Yoshihiro Takahashi , Yasushi Yamamoto , Natsuhiko Sakairi , Shin-Ichi Shikata , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi
IPC分类号： H03H9/145 , H03H9/02 , H03H9/25 , H01L41/16
CPC分类号： H03H9/02582 , Y10T428/24926 , Y10T428/265 , Y10T428/30
摘要： A surface acoustic wave device comprises a diamond layer (12) or a substrate (11) with a diamond layer (12) formed thereon, an Al electrode (13) formed on the diamond layer (12), and a ZnO piezoelectric thin film layer (14) formed on the diamond layer (12) with the Al electrode (13) covered by the ZnO piezoelectric thin film layer (14). The ZnO piezoelectric thin film layer (14) has a thickness h1 within a range defined by 0.65.ltoreq.kh1.ltoreq.0.75 while the Al electrode (13) has a thickness h2 within a range defined by 0.03.ltoreq.kh2.ltoreq.0.04, where k is given by k=2 .pi./.lambda. and .lambda. represents an electrode period.
摘要翻译：表面声波装置包括金刚石层（12）或其上形成有金刚石层（12）的基板（11），形成在金刚石层（12）上的Al电极（13）和ZnO压电薄膜层（14），其上形成有由ZnO压电薄膜层（14）覆盖的Al电极（13）的金刚石层（12）上。 ZnO压电薄膜层（14）的厚度h1在0.65≤kh1≤75的范围内，而Al电极（13）的厚度h2在0.03≤kh2< = 0.04，其中k由k =2π/λ给出，λ表示电极周期。

4. 发明授权

US5874775A Diamond heat sink including microchannel therein and methods for manufacturing diamond heat sinks 失效
标题翻译：金刚石散热器，其中包括微通道及其制造金刚石散热器的方法
公开(公告)号：US5874775A
公开(公告)日：1999-02-23
申请号：US840161
申请日：1997-04-14
申请人： Hiromu Shiomi , Hideaki Nakahata , Yoshiki Nishibayashi , Shin-ichi Shikata
发明人： Hiromu Shiomi , Hideaki Nakahata , Yoshiki Nishibayashi , Shin-ichi Shikata
IPC分类号： H01L23/373 , H01L23/38 , H01L23/34 , H01L23/06
CPC分类号： H01L23/38 , H01L23/3732 , H01L2924/0002 , Y10S257/93
摘要： A diamond heat sink of the present invention comprises: a support layer consisting of substantially undoped diamond; a heat sensitive layer consisting of doped diamond, disposed on the surface of the support layer; an insulation layer consisting of substantially undoped diamond, disposed on a predetermined region in the surface of the heat sensitive layer; electrodes disposed on the heat sensitive layer, wherein an exothermal device is placed on the surface of the insulation layer; and a cooling structure disposed on the backside of the support layer, the cooling structure having at least one microchannel, the microchannel being defined by a diamond, wherein an exothermal device is to be placed on the surface of the insulation layer; and wherein the heat sensitive layer and the electrodes form a thermistor, the electrical resistivity of the thermistor being capable of varying corresponding to heat generated from the exothermal device and transferred through the insulation layer to the thermistor.
摘要翻译：本发明的金刚石散热器包括：由基本上未掺杂的金刚石构成的支撑层; 由掺杂金刚石构成的热敏层，设置在支撑层的表面上; 由基本上未掺杂的金刚石构成的绝缘层，设置在热敏层表面的预定区域上; 设置在热敏层上的电极，其中放热装置放置在绝缘层的表面上; 以及设置在所述支撑层的背面上的冷却结构，所述冷却结构具有至少一个微通道，所述微通道由金刚石限定，其中放热装置将被放置在所述绝缘层的表面上; 并且其中所述热敏层和所述电极形成热敏电阻，所述热敏电阻的电阻率能够相应于从所述放热器件产生的热量而变化并通过所述绝缘层传递到所述热敏电阻器。

5. 发明授权

US5776246A Diamond wafer and method of producing a diamond wafer 失效
公开(公告)号：US5776246A
公开(公告)日：1998-07-07
申请号：US418116
申请日：1995-04-06
申请人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
发明人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
IPC分类号： C23C16/27 , C30B25/02 , H03H3/08 , H03H9/02 , C30B29/04
CPC分类号： C23C16/279 , C23C16/27 , C30B25/02 , C30B29/04 , H03H3/08 , H03H9/02582
摘要： A diamond wafer including a substrate and a (100) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (100) oriented film is produced by changing a hydrocarbon ratio in a material gas halfway from a higher value to a lower value. The wafer is monotonously distorted with a distortion height H satisfying 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.

6. 发明授权

US5729074A Micro mechanical component and production process thereof 失效
公开(公告)号：US5729074A
公开(公告)日：1998-03-17
申请号：US407155
申请日：1995-03-20
申请人： Hiromu Shiomi , Yoshiki Nishibayashi , Shin-ichi Shikata
发明人： Hiromu Shiomi , Yoshiki Nishibayashi , Shin-ichi Shikata
IPC分类号： B81B3/00 , B81C1/00 , G01C19/56 , G01H3/08 , G01H11/00 , G01H11/06 , G01L9/00 , G01P15/08 , G01P15/125 , G01Q70/14 , G01Q80/00
CPC分类号： G01P15/0802 , B81B3/007 , B81C1/0015 , B81C1/00682 , G01H11/00 , G01H11/06 , G01H3/08 , G01P15/125 , B81B2201/0235 , B81B2201/0264 , B81B2201/034 , B81B2201/035 , B81B2201/054 , B81B2203/0118 , B81B2203/04 , B81C2201/0109 , G01P2015/0828
摘要： A micro mechanical component of the present invention comprises a base, and at least one drive portion supported on the base and relatively driving to the base, in which the drive portion is formed from a diamond layer. Thus, because the drive portion has excellent mechanical strength and modulus of elasticity, the operational performance can be greatly improved as a micro mechanical component processed in a fine shape, from the conventional level. Further, because the drive portion exhibits excellent device characteristics under severe circumstances, the range of applications as a micro mechanical component can be widely expanded from the conventional range.

7. 发明授权

US5668382A Ohmic electrode and method for forming it 失效
标题翻译：欧姆电极及其形成方法
公开(公告)号：US5668382A
公开(公告)日：1997-09-16
申请号：US668525
申请日：1996-06-28
申请人： Naohiro Toda , Yoshiki Nishibayashi , Tadashi Tomikawa , Shin-ichi Shikata
发明人： Naohiro Toda , Yoshiki Nishibayashi , Tadashi Tomikawa , Shin-ichi Shikata
IPC分类号： H01L21/28 , H01L21/04 , H01L21/285 , H01L21/324 , H01L29/45 , H01L33/34 , H01L33/40 , H01L31/0312 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L33/40 , H01L21/043 , H01L29/45 , H01L33/34 , H01L2924/0002
摘要： An ohmic electorde of the present invention comprises a contact electrode layer formed on a p-type diamond semiconductor layer formed on a substrate so as to be in ohmic contact with the p-type diamond semiconductor layer and to have low contact resistance and high heat resistance, and a lead electrode layer formed on the contact electrode layer so as to have low lead wire resistance and high heat resistance. Specifically, the contact electrode layer is made of either a carbide of at least one metal selected from a metal group comprising Ti, Zr, and Hf, or a carbide of an alloy containing at least one metal selected from the metal group. Since the carbide of the metal or alloy forming the contact electrode layer is stabler in respect of energy because of reduced formation enthalpy than the metal or alloy itself, it is very unlikely to diffuse. Therefore, little metal or alloy forming the contact electrode layer precipitates on the surface of the lead electrode layer formed on the contact electrode layer, thus improving the device performance, based on the reduced lead wire resistance.
摘要翻译：本发明的欧姆电极包括形成在基板上的与p型金刚石半导体层欧姆接触并且具有低接触电阻和高耐热性的p型金刚石半导体层上的接触电极层以及形成在接触电极层上的引线电极层，以便具有低引线电阻和高耐热性。具体地，接触电极层由选自由Ti，Zr和Hf的金属组成的至少一种金属的碳化物或含有选自金属中的至少一种金属的合金的碳化物制成。由于形成接触电极层的金属或合金的碳化物相对于能量而言更稳定，因为与金属或合金本身相比，形成焓降低，所以不可能扩散。因此，形成接触电极层的少量金属或合金在形成在接触电极层上的引线电极层的表面析出，从而基于降低的引线电阻提高器件性能。

8. 发明授权

US5663595A Diamond heat sink comprising synthetic diamond film 失效
标题翻译：金刚石散热片包括合成金刚石薄膜
公开(公告)号：US5663595A
公开(公告)日：1997-09-02
申请号：US509569
申请日：1995-07-31
申请人： Hiromu Shiomi , Hideaki Nakahata , Yoshiki Nishibayashi , Shin-ichi Shikata
发明人： Hiromu Shiomi , Hideaki Nakahata , Yoshiki Nishibayashi , Shin-ichi Shikata
IPC分类号： H01L23/373 , H01L23/38 , H01L23/34 , H01L31/0312
CPC分类号： H01L23/38 , H01L23/3732 , H01L2924/0002
摘要： A diamond heat sink of the present invention comprises:a support layer consisting of substantially undoped vapor phase synthetic diamond;a heat sensitive layer consisting of doped vapor phase synthetic diamond formed on the surface of the support layer;an insulation layer consisting of substantially undoped vapor phase synthetic diamond formed on a predetermined region of the heat sensitive layer; andan electrode formed on the heat sensitive layer. The electrode typically consists of a metal, preferably Ti/Mo/Au or Ti/Pt/Au.The diamond heat sink of the present invention may further include a highly-doped layer for creating Ohmic contacts with the metal electrode, which is made of the vapor phase synthetic diamond having high impurity levels, and which is disposed between the metal electrode and the heat sensitive layer.
摘要翻译：本发明的金刚石散热器包括：由基本上未掺杂的气相合成金刚石构成的支撑层; 由在载体层的表面上形成的掺杂气相合成金刚石构成的热敏层; 由形成在热敏层的预定区域上的基本上未掺杂的气相合成金刚石构成的绝缘层; 以及形成在热敏层上的电极。电极通常由金属，优选Ti / Mo / Au或Ti / Pt / Au组成。本发明的金刚石散热器还可以包括高掺杂层，用于与金属电极产生欧姆接触，该金属电极由具有高杂质水平的气相合成金刚石制成，并且设置在金属电极和热敏感层。

9. 发明授权

US5565725A Surface acoustic wave device 失效
标题翻译：表面声波装置
公开(公告)号：US5565725A
公开(公告)日：1996-10-15
申请号：US429401
申请日：1995-04-26
申请人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo , Shin-ichi Shikata
发明人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo , Shin-ichi Shikata
IPC分类号： H03H9/145 , H03H9/02 , H01L41/08
CPC分类号： H03H9/02582
摘要： A SAW device which includes at least, diamond, an LiNbO.sub.3 layer disposed on the diamond, and an IDT provided so as to contact the LiNbO.sub.3 layer; and utilizes SAW of an "n-th" mode (n=0, 1 or 2) having a wavelength of .lambda..sub.n (.mu.m), wherein a parameter of kh.sub.1 =2.pi.(t.sub.1 /.lambda..sub.n) is in a specific range provided that the thickness of the LiNbO.sub.3 layer is denoted by t.sub.1 (.mu.m).
摘要翻译：至少包括金刚石，设置在金刚石上的LiNbO 3层的SAW器件和设置成与LiNbO 3层接触的IDT; 并且使用波长为λn（μm）的“n”模式（n = 0,1或2）的SAW，其中kh1 =2π（t1 /λn）的参数在特定范围内条件是LiNbO 3层的厚度由t1（μm）表示。

10. 发明授权

US5565724A Orientational material, orientational substrate and surface acoustic wave device 失效
标题翻译：定向材料，取向基板和表面声波装置
公开(公告)号：US5565724A
公开(公告)日：1996-10-15
申请号：US363457
申请日：1994-12-22
申请人： Akihiro Hachigo , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Shin-ichi Shikata
发明人： Akihiro Hachigo , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Shin-ichi Shikata
IPC分类号： H03H9/145 , H03H9/02 , H03H9/25 , H01L41/08
CPC分类号： H03H9/02582
摘要： An orientational material including: diamond, and a ZnO film disposed on a surface of (111) orientational diamond provided by the diamond. Such an orientational material may suitably be used as a component for fabricating a surface acoustic wave device utilizing diamond.
摘要翻译：取向材料包括金刚石和设置在由钻石提供的（111）取向金刚石的表面上的ZnO膜。这种定向材料可以适当地用作制造使用金刚石的声表面波器件的组件。

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