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    • 2. 发明申请
    • Light emitting device and process for fabricating the same
    • 发光装置及其制造方法
    • US20060145177A1
    • 2006-07-06
    • US10546201
    • 2003-12-19
    • Kazunori HagimotoMasato Yamada
    • Kazunori HagimotoMasato Yamada
    • H01L33/00
    • H01L33/405H01L33/0079
    • A light emitting device 100 of the invention is the one using a first main surface of a compound semiconductor layer portion, having a light emitting layer section 24 therein, as a light extraction surface, and having, on the second main surface side of the compound semiconductor layer, a device-substrate 7 bonded thereto while placing, in between, a main metal layer 10 having a reflective surface reflecting light from the light emitting layer section 24 towards the light extraction surface side, and is characterized in that the device-substrate 7 is composed of a Si substrate having a conductivity type of p type, and that the device-substrate 7 has, as being formed on the main surface thereof on the main metal layer 10 side, a contact layer 31 having Al as a major component. With respect to light emitting devices configured as having a structure in which a light emitting layer section and a device-substrate are bonded while placing a metal layer in between, the invention is successful in providing a light emitting device having a desirable electro-conductivity, and a method of fabricating the same.
    • 本发明的发光装置100是使用化合物半导体层部的第一主表面,其中具有发光层部分24作为光提取表面的发光器件100,并且在化合物的第二主表面侧 半导体层,与其结合的器件基板7,同时在其间具有反射表面的主金属层10,反射表面反射来自发光层部分24的光朝向光提取表面侧,并且其特征在于,器件基板 7由具有导电类型为p型的Si衬底组成,器件衬底7在主金属层10侧的主表面上形成有以Al为主要成分的接触层31 。 对于配置为具有发光层部分和器件 - 衬底被结合在一起的结构的发光器件,在其间放置金属层的情况下,本发明成功地提供了具有期望的导电性的发光器件, 及其制造方法。
    • 6. 发明申请
    • Detection device
    • 检测装置
    • US20060265147A1
    • 2006-11-23
    • US11405450
    • 2006-04-18
    • Atsushi YamaguchiYoshihisa SuzukiMasato YamadaShuichi Ichiura
    • Atsushi YamaguchiYoshihisa SuzukiMasato YamadaShuichi Ichiura
    • G06F19/00
    • G01S7/481G01S7/497G01S17/936
    • An object of the present invention is to provide a detection device which does not cause the false detection by receiving laser light from an oncoming car. The pulse laser light modulated with a modulation pattern set every target position is irradiated at the target position from a laser irradiation portion. DSP (Digital Signal Processor) decides that there is an obstacle at the target position only when the modulation pattern of the pulse laser light emitted from the laser emitting portion matches with the modulation pattern of the pulse laser light received by the laser receiving portion. It is suppressed that the detection device misdetects the conditions of the target position when receiving laser light from an oncoming car or the like because modulation pattern of laser light from own does not match with modulation pattern of laser light from the oncoming car or the like.
    • 本发明的目的是提供一种通过接收来自迎面而来的轿厢的激光不会引起错误检测的检测装置。 以每个目标位置设定的调制图案调制的脉冲激光在激光照射部分的目标位置被照射。 只有当从激光发射部分发射的脉冲激光的调制图案与由激光接收部分接收的脉冲激光的调制图案匹配时,DSP(数字信号处理器)才确定目标位置处存在障碍物。 抑制了当从迎面而来的轿厢等接收激光时检测装置误检目标位置的状况,因为来自其的激光的调制图案与迎面而来的轿厢等的激光的调制图案不匹配。
    • 8. 发明授权
    • Gallium phosphide luminescent device
    • 磷化镓发光装置
    • US06479312B1
    • 2002-11-12
    • US09869266
    • 2001-06-27
    • Masato YamadaSusumu HiguchiKousei YumotoMakoto KawasakiKen Aihara
    • Masato YamadaSusumu HiguchiKousei YumotoMakoto KawasakiKen Aihara
    • H01L2100
    • H01L33/025H01L33/30Y10S438/918
    • By providing a nitrogen-doped low carrier concentration layer 13 having both of a donor concentration and an acceptor concentration controlled below 1×1016/cm3 at a p-n junction portion between an n-type GaP layer 12 and a p-type GaP layer 14, the luminance of the GaP light emitting device can be improved by as much as 20 to 30% over the conventional one. Suppressing the donor concentration and the acceptor concentration in the low carrier concentration layer 13 below 1×1016/cm3 inevitably gives a carrier concentration, which is expressed as a difference between both concentrations, lower than 1×1016/cm3 accordingly. The emission efficiency upon injection of electrons or holes can be improved by suppressing the concentration of the donor which serves as non-emissive center below 1×1016/cm3 to thereby extend the carrier lifetime; and by concomitantly suppressing the carrier concentration at a level significantly lower than that in the adjacent layers 12 and 14.
    • 通过在n型GaP层12和p型GaP层14之间的pn结部分提供具有供体浓度和受主浓度两者的氮掺杂低载流子浓度层13,其控制在1×1016 / cm3以下, 的GaP发光器件可以比传统的发光器件提高多达20至30%。 抑制低载体浓度层13中的供体浓度和受体浓度低于1×10 16 / cm 3时,不可避免地会产生一个载流子浓度,其表示为两个浓度之间的差值,相应地低于1×10 16 / cm 3。 通过抑制作为不发光中心的供体的浓度低于1×10 16 / cm 3,可以提高注入电子或空穴的发射效率,从而延长载体寿命; 并且通过伴随地将载流子浓度抑制在显着低于相邻层12和14中的水平。
    • 10. 发明授权
    • Method of making epitaxial wafers
    • 制造外延片的方法
    • US5362683A
    • 1994-11-08
    • US205558
    • 1994-03-04
    • Takao TakenakaMasahisa EndoMasato Yamada
    • Takao TakenakaMasahisa EndoMasato Yamada
    • C30B19/00H01L21/20H01L21/208H01L21/304H01L21/302
    • H01L21/304H01L21/02395H01L21/02463H01L21/02507H01L21/02546H01L21/02625H01L21/02628Y10S117/915
    • To manufacture epitaxial wafers with a smaller amount of semiconductor crystals at a lower cost by means of an efficient epitaxial growth process. An epitaxial wafer is made by forming, by means of epitaxial growth, GaAlAs layers with identical structures on both sides of a GaAs substrate wafer with the crystal plane orientation of {100}. The epitaxial wafer is then divided in the GaAs substrate wafer portion into two pieces to obtain two epitaxial wafers. To perform the epitaxial growth process, a plurality of GaAs substrate wafers are held at their edges and then the GaAs substrate wafers are placed in a Ga solution at prescribed spatial intervals. To divide the epitaxial wafer in the GaAs substrate portion into two pieces, the substrate wafer portion is cut parallel to the main surface. Or, the GaAs substrate wafer can also be removed by means of etching while the epitaxial wafer is rotated at a high speed in the etching solution.
    • 通过有效的外延生长工艺以更低的成本制造具有更少量的半导体晶体的外延晶片。 通过外延生长,通过在晶体平面取向为{100}的GaAs衬底晶片的两侧上形成具有相同结构的GaAlAs层来制造外延晶片。 然后将外延晶片在GaAs衬底晶片部分中分成两片,以获得两个外延晶片。 为了进行外延生长处理,将多个GaAs衬底晶片保持在其边缘,然后将GaAs衬底晶片以规定的空间间隔放置在Ga溶液中。 为了将GaAs衬底部分中的外延晶片分成两片,平行于主表面切割衬底晶片部分。 或者,也可以通过蚀刻去除GaAs衬底晶片,同时外延晶片在蚀刻溶液中以高速旋转。