专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07041529B2 Light-emitting device and method of fabricating the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07041529B2
公开(公告)日：2006-05-09
申请号：US10690453
申请日：2003-10-22
申请人： Masato Yamada , Jun-ya Ishizaki , Nobuhiko Noto , Kazunori Hagimoto , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
发明人： Masato Yamada , Jun-ya Ishizaki , Nobuhiko Noto , Kazunori Hagimoto , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
IPC分类号： H01L21/00 , H01L21/30
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/10 , H01L33/145 , H01L33/387 , H01L33/405 , H01L2933/0016
摘要： In a light-emitting device, a light-emitting layer portion composed of a compound semiconductor is bonded on one main surface of a transparent conductive semiconductor substrate while placing a substrate-bonding conductive oxide layer composed of a conductive oxide in between. Between the light-emitting layer portion and the substrate-bonding conductive oxide layer, a contact layer for reducing junction resistance with the substrate-bonding conductive oxide layer so as to contact with the substrate-bonding conductive oxide layer. This is successful in providing the light-emitting device which is producible at low costs, has a low series resistance, and can attain a sufficient emission efficiency despite it has a thick current-spreading layer.
摘要翻译：在发光装置中，将由化合物半导体构成的发光层部分接合在透明导电半导体衬底的一个主表面上，同时将由导电氧化物构成的衬底接合导电氧化物层放置在其间。在发光层部分和与衬底结合的导电氧化物层之间，具有用于与衬底结合导电氧化物层降低结电阻以与衬底结合导电氧化物层接触的接触层。这是成功地提供了可以低成本生产的低发光装置，具有低串联电阻，并且尽管具有厚的电流扩展层，但是可以获得足够的发光效率。

2. 发明申请

US20060145177A1 Light emitting device and process for fabricating the same 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：US20060145177A1
公开(公告)日：2006-07-06
申请号：US10546201
申请日：2003-12-19
申请人： Kazunori Hagimoto , Masato Yamada
发明人： Kazunori Hagimoto , Masato Yamada
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/0079
摘要： A light emitting device 100 of the invention is the one using a first main surface of a compound semiconductor layer portion, having a light emitting layer section 24 therein, as a light extraction surface, and having, on the second main surface side of the compound semiconductor layer, a device-substrate 7 bonded thereto while placing, in between, a main metal layer 10 having a reflective surface reflecting light from the light emitting layer section 24 towards the light extraction surface side, and is characterized in that the device-substrate 7 is composed of a Si substrate having a conductivity type of p type, and that the device-substrate 7 has, as being formed on the main surface thereof on the main metal layer 10 side, a contact layer 31 having Al as a major component. With respect to light emitting devices configured as having a structure in which a light emitting layer section and a device-substrate are bonded while placing a metal layer in between, the invention is successful in providing a light emitting device having a desirable electro-conductivity, and a method of fabricating the same.
摘要翻译：本发明的发光装置100是使用化合物半导体层部的第一主表面，其中具有发光层部分24作为光提取表面的发光器件100，并且在化合物的第二主表面侧半导体层，与其结合的器件基板7，同时在其间具有反射表面的主金属层10，反射表面反射来自发光层部分24的光朝向光提取表面侧，并且其特征在于，器件基板 7由具有导电类型为p型的Si衬底组成，器件衬底7在主金属层10侧的主表面上形成有以Al为主要成分的接触层31 。对于配置为具有发光层部分和器件 - 衬底被结合在一起的结构的发光器件，在其间放置金属层的情况下，本发明成功地提供了具有期望的导电性的发光器件，及其制造方法。

3. 发明申请

US20120287990A1 IMAGE PROCESSOR 有权
标题翻译：图像处理器
公开(公告)号：US20120287990A1
公开(公告)日：2012-11-15
申请号：US13522122
申请日：2010-11-29
申请人： Toshimitsu Tatsuka , Hiromu Hasegawa , Takeaki Komuro , Masato Yamada
发明人： Toshimitsu Tatsuka , Hiromu Hasegawa , Takeaki Komuro , Masato Yamada
IPC分类号： H04N7/12
CPC分类号： H04N19/174 , H04N19/124 , H04N19/147 , H04N19/149 , H04N19/196 , H04N19/61
摘要： An image processor includes an encoder that performs encoding including quantization on an image signal and a controller that controls a quantization parameter for quantization. The controller determines a quantization parameter of a currently target macroblock as an increase or decrease from a reference value, and determines the increase or decrease based on a difference between a target amount of code for a predetermined number of macroblocks fewer than a total number of macroblocks within one frame and a generated amount of code of the predetermined number of macroblocks processed immediately before. The controller can further determine the increase or decrease, based on pixel information of the currently target macroblock such as an activity evaluation value.
摘要翻译：图像处理器包括编码器，该编码器执行包括对图像信号的量化的编码以及控制量化量化参数的控制器。控制器根据参考值确定当前目标宏块的量化参数为增加或减小，并且基于小于总宏块数的预定数量的宏块的目标代码量之间的差确定增加或减小并且在紧接着之前处理预定数量的宏块的生成的代码量。控制器可以基于诸如活动评估值的当前目标宏块的像素信息来进一步确定增加或减少。

4. 发明申请

US20110051209A1 BEAM IRRADIATION APPARATUS AND LASER RADAR 审中-公开
标题翻译：光束辐射装置和激光雷达
公开(公告)号：US20110051209A1
公开(公告)日：2011-03-03
申请号：US12869312
申请日：2010-08-26
申请人： Masato Yamada , Takaaki Morimoto , Yoichiro Goto
发明人： Masato Yamada , Takaaki Morimoto , Yoichiro Goto
IPC分类号： G02B26/10
CPC分类号： G02B26/101 , B60T7/22 , G01S7/4814 , G01S7/4817 , G01S17/10 , G01S17/42
摘要： A beam irradiation apparatus includes a light source which outputs a laser beam, a convergent lens into which the laser beam output from the light source is entered, and a scanning portion which makes the laser beam transmitted through the convergent lens scan on a target region. In the beam irradiation apparatus, the laser light source is arranged such that a pn junction surface of a laser chip is parallel with the vertical direction. Length of the laser beam in the vertical direction on the target region is set by length of a light emitting portion of the laser light source in the vertical direction. Further, a wavefront aberration of the convergent lens with respect to the laser beam is set to be 0.15 λrms or less.
摘要翻译：束照射装置包括输出激光束的光源，从光源输出的激光束入射到的会聚透镜，以及使激光束通过会聚透镜扫描的目标区域的扫描部。在光束照射装置中，激光光源被配置为使得激光芯片的pn结面与垂直方向平行。目标区域上的垂直方向上的激光束的长度由激光光源的发光部分的垂直方向的长度来设定。此外，会聚透镜相对于激光束的波前像差被设定为0.15λrms以下。

5. 发明申请

US20100321751A1 MIRROR ACTUATOR AND BEAM IRRADIATION DEVICE 审中-公开
标题翻译：镜子致动器和光束辐射装置
公开(公告)号：US20100321751A1
公开(公告)日：2010-12-23
申请号：US12815788
申请日：2010-06-15
申请人： Masato Yamada , Yoichiro Goto , Nobuo Iwatsuki , Yoshiaki Maeno
发明人： Masato Yamada , Yoichiro Goto , Nobuo Iwatsuki , Yoshiaki Maeno
IPC分类号： G02B26/10 , G02B7/182
CPC分类号： G02B26/101
摘要： A mirror actuator includes a base block; a first pivot shaft fixedly attached to the base block; a first pivot portion pivotally supported on the first pivot shaft; a second pivot shaft fixedly attached to the first pivot portion and perpendicularly intersecting with the first pivot shaft; a second pivot portion pivotally supported on the second pivot shaft; and a mirror attached to the second pivot portion. In the above arrangement, the first pivot portion and the second pivot portion respectively have a first bearing portion and a second bearing portion for bearing the first pivot shaft and the second pivot shaft at one position.
摘要翻译：反射镜致动器包括基座; 固定在基座上的第一枢转轴; 枢转地支撑在所述第一枢轴上的第一枢转部分; 固定地连接到第一枢转部分并与第一枢轴垂直相交的第二枢转轴; 枢转地支撑在所述第二枢转轴上的第二枢转部分; 以及附接到第二枢转部分的反射镜。在上述结构中，第一枢转部分和第二枢轴部分别具有第一轴承部分和第二轴承部分，用于将第一枢轴和第二枢轴轴承在一个位置。

6. 发明申请

US20060265147A1 Detection device 失效
标题翻译：检测装置
公开(公告)号：US20060265147A1
公开(公告)日：2006-11-23
申请号：US11405450
申请日：2006-04-18
申请人： Atsushi Yamaguchi , Yoshihisa Suzuki , Masato Yamada , Shuichi Ichiura
发明人： Atsushi Yamaguchi , Yoshihisa Suzuki , Masato Yamada , Shuichi Ichiura
IPC分类号： G06F19/00
CPC分类号： G01S7/481 , G01S7/497 , G01S17/936
摘要： An object of the present invention is to provide a detection device which does not cause the false detection by receiving laser light from an oncoming car. The pulse laser light modulated with a modulation pattern set every target position is irradiated at the target position from a laser irradiation portion. DSP (Digital Signal Processor) decides that there is an obstacle at the target position only when the modulation pattern of the pulse laser light emitted from the laser emitting portion matches with the modulation pattern of the pulse laser light received by the laser receiving portion. It is suppressed that the detection device misdetects the conditions of the target position when receiving laser light from an oncoming car or the like because modulation pattern of laser light from own does not match with modulation pattern of laser light from the oncoming car or the like.
摘要翻译：本发明的目的是提供一种通过接收来自迎面而来的轿厢的激光不会引起错误检测的检测装置。以每个目标位置设定的调制图案调制的脉冲激光在激光照射部分的目标位置被照射。只有当从激光发射部分发射的脉冲激光的调制图案与由激光接收部分接收的脉冲激光的调制图案匹配时，DSP（数字信号处理器）才确定目标位置处存在障碍物。抑制了当从迎面而来的轿厢等接收激光时检测装置误检目标位置的状况，因为来自其的激光的调制图案与迎面而来的轿厢等的激光的调制图案不匹配。

7. 发明授权

US06847056B2 Light emitting device 失效
标题翻译：发光装置
公开(公告)号：US06847056B2
公开(公告)日：2005-01-25
申请号：US10240101
申请日：2002-01-29
申请人： Nobuhiko Noto , Masato Yamada , Masahisa Endo , Hitoshi Ikeda , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
发明人： Nobuhiko Noto , Masato Yamada , Masahisa Endo , Hitoshi Ikeda , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
IPC分类号： H01L33/32 , H01L33/42 , H01L33/00
CPC分类号： H01L33/42 , H01L33/0079
摘要： A light emitting device 100 has a structure in which a p type InGaAs layer 7 as an electrode contact layer and an ITO electrode layer 8 as an oxide transparent electrode layer are formed in the order in a first major surface 17 side of a light emitting layer section 24. In a second major surface 18 side of the light emitting layer section 24, an n type InGaAs layer 9 as an electrode contact layer and an ITO electrode layer 10 as an oxide transparent electrode layer are formed in the order. The ITO electrode layers 8 and 10 together with the p type InGaAs layer 7 and the n type InGaAs layer 9 are formed on the respective both major surfaces 17 and 18 of the light emitting layer section 24 so as to cover the respective both major surfaces 17 and 18 in the entirety thereof.
摘要翻译：发光器件100具有以下结构：作为电极接触层的ap型InGaAs层7和作为氧化物透明电极层的ITO电极层8按照发光层部分的第一主表面17侧的顺序形成在发光层部分24的第二主表面18侧，依次形成作为电极接触层的n型InGaAs层9和作为氧化物透明电极层的ITO电极层10。在发光层部分24的两个主表面17和18上形成ITO电极层8和10以及p型InGaAs层7和n型InGaAs层9，以覆盖相应的两个主表面17 全部为18。

8. 发明授权

US06479312B1 Gallium phosphide luminescent device 失效
标题翻译：磷化镓发光装置
公开(公告)号：US06479312B1
公开(公告)日：2002-11-12
申请号：US09869266
申请日：2001-06-27
申请人： Masato Yamada , Susumu Higuchi , Kousei Yumoto , Makoto Kawasaki , Ken Aihara
发明人： Masato Yamada , Susumu Higuchi , Kousei Yumoto , Makoto Kawasaki , Ken Aihara
IPC分类号： H01L2100
CPC分类号： H01L33/025 , H01L33/30 , Y10S438/918
摘要： By providing a nitrogen-doped low carrier concentration layer 13 having both of a donor concentration and an acceptor concentration controlled below 1×1016/cm3 at a p-n junction portion between an n-type GaP layer 12 and a p-type GaP layer 14, the luminance of the GaP light emitting device can be improved by as much as 20 to 30% over the conventional one. Suppressing the donor concentration and the acceptor concentration in the low carrier concentration layer 13 below 1×1016/cm3 inevitably gives a carrier concentration, which is expressed as a difference between both concentrations, lower than 1×1016/cm3 accordingly. The emission efficiency upon injection of electrons or holes can be improved by suppressing the concentration of the donor which serves as non-emissive center below 1×1016/cm3 to thereby extend the carrier lifetime; and by concomitantly suppressing the carrier concentration at a level significantly lower than that in the adjacent layers 12 and 14.
摘要翻译：通过在n型GaP层12和p型GaP层14之间的pn结部分提供具有供体浓度和受主浓度两者的氮掺杂低载流子浓度层13，其控制在1×1016 / cm3以下，的GaP发光器件可以比传统的发光器件提高多达20至30％。抑制低载体浓度层13中的供体浓度和受体浓度低于1×10 16 / cm 3时，不可避免地会产生一个载流子浓度，其表示为两个浓度之间的差值，相应地低于1×10 16 / cm 3。通过抑制作为不发光中心的供体的浓度低于1×10 16 / cm 3，可以提高注入电子或空穴的发射效率，从而延长载体寿命; 并且通过伴随地将载流子浓度抑制在显着低于相邻层12和14中的水平。

9. 发明授权

US5731209A Method for the determination of nitrogen concentration in compound semiconductor 失效
标题翻译：化合物半导体氮浓度测定方法
公开(公告)号：US5731209A
公开(公告)日：1998-03-24
申请号：US614206
申请日：1996-03-12
申请人： Masato Yamada , Munehisa Yanagisawa , Susumu Higuchi
发明人： Masato Yamada , Munehisa Yanagisawa , Susumu Higuchi
IPC分类号： G01N21/31 , H01L21/66 , H01L33/30 , G01N21/59
CPC分类号： G01N21/31 , Y10T436/17 , Y10T436/176152
摘要： An efficient method is proposed for the determination of the concentration of nitrogen in an indirect-transition compound semiconductor such as gallium phosphide added as an isoelectronic trap. The method utilizes the fact that a good correlation of proportionality is held between the nitrogen concentration and the difference .DELTA..alpha.(=.alpha..sub.N -.alpha.) in the absorption coefficient of light of a wavelength identical with the wavelength .lambda..sub.N due to the excitons under constraint in the isoelectronic trap between the semiconductors with (.alpha..sub.N) and without (.alpha.) addition of nitrogen. A working curve is presented between the nitrogen concentration determined by the method of SIMS and the value of .DELTA..alpha..
摘要翻译：提出了一种有效的方法来确定作为等电子阱添加的间接转移化合物半导体如磷化镓中的氮浓度。该方法利用这样一个事实，即由于激子在约束条件下，在与波长λN相同的波长的光的吸收系数中，氮浓度和差ΔTA（=αNa-α）之间保持相称性的良好相关性在具有（αN）和没有（α）氮的氮的半导体之间的等电子阱中。介绍了通过SIMS方法测定的氮浓度与DELTAα值之间的工作曲线。

10. 发明授权

US5362683A Method of making epitaxial wafers 失效
标题翻译：制造外延片的方法
公开(公告)号：US5362683A
公开(公告)日：1994-11-08
申请号：US205558
申请日：1994-03-04
申请人： Takao Takenaka , Masahisa Endo , Masato Yamada
发明人： Takao Takenaka , Masahisa Endo , Masato Yamada
IPC分类号： C30B19/00 , H01L21/20 , H01L21/208 , H01L21/304 , H01L21/302
CPC分类号： H01L21/304 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/02625 , H01L21/02628 , Y10S117/915
摘要： To manufacture epitaxial wafers with a smaller amount of semiconductor crystals at a lower cost by means of an efficient epitaxial growth process. An epitaxial wafer is made by forming, by means of epitaxial growth, GaAlAs layers with identical structures on both sides of a GaAs substrate wafer with the crystal plane orientation of {100}. The epitaxial wafer is then divided in the GaAs substrate wafer portion into two pieces to obtain two epitaxial wafers. To perform the epitaxial growth process, a plurality of GaAs substrate wafers are held at their edges and then the GaAs substrate wafers are placed in a Ga solution at prescribed spatial intervals. To divide the epitaxial wafer in the GaAs substrate portion into two pieces, the substrate wafer portion is cut parallel to the main surface. Or, the GaAs substrate wafer can also be removed by means of etching while the epitaxial wafer is rotated at a high speed in the etching solution.
摘要翻译：通过有效的外延生长工艺以更低的成本制造具有更少量的半导体晶体的外延晶片。通过外延生长，通过在晶体平面取向为{100}的GaAs衬底晶片的两侧上形成具有相同结构的GaAlAs层来制造外延晶片。然后将外延晶片在GaAs衬底晶片部分中分成两片，以获得两个外延晶片。为了进行外延生长处理，将多个GaAs衬底晶片保持在其边缘，然后将GaAs衬底晶片以规定的空间间隔放置在Ga溶液中。为了将GaAs衬底部分中的外延晶片分成两片，平行于主表面切割衬底晶片部分。或者，也可以通过蚀刻去除GaAs衬底晶片，同时外延晶片在蚀刻溶液中以高速旋转。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式