专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07041529B2 Light-emitting device and method of fabricating the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07041529B2
公开(公告)日：2006-05-09
申请号：US10690453
申请日：2003-10-22
申请人： Masato Yamada , Jun-ya Ishizaki , Nobuhiko Noto , Kazunori Hagimoto , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
发明人： Masato Yamada , Jun-ya Ishizaki , Nobuhiko Noto , Kazunori Hagimoto , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
IPC分类号： H01L21/00 , H01L21/30
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/10 , H01L33/145 , H01L33/387 , H01L33/405 , H01L2933/0016
摘要： In a light-emitting device, a light-emitting layer portion composed of a compound semiconductor is bonded on one main surface of a transparent conductive semiconductor substrate while placing a substrate-bonding conductive oxide layer composed of a conductive oxide in between. Between the light-emitting layer portion and the substrate-bonding conductive oxide layer, a contact layer for reducing junction resistance with the substrate-bonding conductive oxide layer so as to contact with the substrate-bonding conductive oxide layer. This is successful in providing the light-emitting device which is producible at low costs, has a low series resistance, and can attain a sufficient emission efficiency despite it has a thick current-spreading layer.
摘要翻译：在发光装置中，将由化合物半导体构成的发光层部分接合在透明导电半导体衬底的一个主表面上，同时将由导电氧化物构成的衬底接合导电氧化物层放置在其间。在发光层部分和与衬底结合的导电氧化物层之间，具有用于与衬底结合导电氧化物层降低结电阻以与衬底结合导电氧化物层接触的接触层。这是成功地提供了可以低成本生产的低发光装置，具有低串联电阻，并且尽管具有厚的电流扩展层，但是可以获得足够的发光效率。

2. 发明授权

US06982438B2 Light emitting device and method for fabricating the same 失效
标题翻译：发光元件及其制造方法
公开(公告)号：US06982438B2
公开(公告)日：2006-01-03
申请号：US10484408
申请日：2002-07-24
申请人： Jun-ya Ishizaki
发明人： Jun-ya Ishizaki
IPC分类号： H01L33/00
CPC分类号： H01L33/28 , H01L21/0242 , H01L21/02472 , H01L21/02483 , H01L21/02554 , H01L21/02565 , H01L21/02576 , H01L21/02579 , H01L21/02584 , H01L21/0262 , H01L33/06
摘要： In a MgZnO layer composing an active layer or a p-type cladding layer 32, a p-type oxide layer 32b which is different from MgaZn1-aO-type oxide and has a p-type conductivity is disposed. Because a function of absorbing and compensating electrons in this configuration is owned by the p-type oxide layer localized in the MgZnO layer, it is no more necessary to add a large amount of dopant, and this is successful in obtaining a p-type or i-type MgaZn1-aO-type oxide having a desirable quality, and in realizing a high-emission-efficiency, light-emitting device capable of emitting ultraviolet or blue light. Adoption of a junction structure, in which at least either of the p-type cladding layer and the n-type cladding layer comprises a first crystal layer, and a second crystal layer which is hetero-bonded to the first crystal layer, and on the side thereof opposite to the active layer and has a band gap energy smaller than that of the first crystal layer, is successful in effectively injecting the carrier to the active layer, and consequently in raising the emission efficiency.
摘要翻译：在构成有源层或p型覆层32的MgZnO层中，与不同于Mg 1-a O 2的p型氧化物层32b 并且具有p型导电性。由于在该构造中吸收和补偿电子的功能由位于MgZnO层中的p型氧化物层所拥有，所以不再需要添加大量的掺杂剂，这在获得p型或具有期望质量的i型Mg _{1 1-a O型氧化物，并且在实现能够发射紫外线的高发射效率的发光器件或蓝光。采用其中p型包覆层和n型包层中的至少任一个包括第一晶体层的结结构和与第一晶体层杂结的第二晶体层，并且在具有与有源层相反的带隙能量小于第一晶体层的带隙能量，成功地将载体有效地注入到有源层，从而提高发光效率。}

3. 发明授权

US07960745B2 Light emitting device and method of fabricating the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07960745B2
公开(公告)日：2011-06-14
申请号：US12303662
申请日：2007-05-29
申请人： Yukari Suzuki , Jun Ikeda , Jun-ya Ishizaki , Shunichi Ikeda
发明人： Yukari Suzuki , Jun Ikeda , Jun-ya Ishizaki , Shunichi Ikeda
IPC分类号： H01L33/02
CPC分类号： H01L33/0079 , H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02543 , H01L21/02576 , H01L24/05 , H01L33/02 , H01L33/025 , H01L2224/04042 , H01L2224/48463
摘要： A light emitting device comprises a light emitting layer section having a double heterostructure of an n-type cladding layer, an active layer and a p-type cladding layer, each composed of AlGaInP stacked in this order. Supposing a bonding object layer having a first main surface side as p type and a second main surface side as n type, a light extraction side electrode is formed to cover the first main surface partially. An n-type transparent device substrate composed of Group III-V compound semiconductor having greater band gap energy than the active layer is bonded to the second main surface of the bonding object layer. On one sides of the transparent device substrate and the bonding object layer, a bonding surface to the other is formed, and an InGaP intermediate layer is formed to have a high concentration Si doping layer formed on the bonding surface side.
摘要翻译：发光器件包括具有由依次层叠的AlGaInP构成的n型包覆层，有源层和p型覆层的双异质结构的发光层部。假设具有第一主表面侧为p型，第二主面侧为n型的接合对象层，形成有一部分覆盖第一主面的光提取侧电极。由具有比有源层更大的带隙能量的III-V族化合物半导体构成的n型透明器件基板被接合到接合目标层的第二主表面。在透明器件基板和接合目标层的一侧上，形成彼此的接合表面，并且形成InGaP中间层以在接合表面侧上形成高浓度的Si掺杂层。

4. 发明授权

US07208755B2 Light-emitting device and method of fabricating the same 失效
标题翻译：发光元件及其制造方法
公开(公告)号：US07208755B2
公开(公告)日：2007-04-24
申请号：US10550298
申请日：2004-03-16
申请人： Jun-ya Ishizaki
发明人： Jun-ya Ishizaki
IPC分类号： H01L29/06
CPC分类号： H01L33/28
摘要： A light emitting device 1 has formed therein a light emitting layer section 24 based on a double heterostructure in which a p-type cladding layer 34, an active layer 33 and an n-type cladding layer 32, individually composed of a MgaZn1-aO (0≦a≦1) type oxide, are stacked in this order, and uses a face on the n-type cladding layer side as a light extraction surface. The device also has, as being provided on the main surface on the light extraction surface side of the n-type cladding layer 32, an n-type low resistivity layer 35 composed of a MgaZn1-aO type oxide, and having a content of an n-type dopant larger than that in the n-type cladding layer 32. There is thus provided a light emitting device of MgaZn1-aO-type oxide base, excellent in the light extraction efficiency, having the light emitting layer section composed of a MgaZn1-aO-type oxide, and a high conductivity MgZnO-base compound semiconductor layer disposed on the light extraction surface side.
摘要翻译：发光器件1在其中形成有基于双异质结构的发光层部分24，其中p型包覆层34，有源层33和n型包覆层32分别由Mg 一种Zn 1-a O（0 <= a <= 1）型氧化物按顺序层叠，并且使用n型包层侧的面作为光提取面。在n型包覆层32的光取出面侧的主表面上设置有由ZnSb Zn（SUB）构成的n型低电阻率层35，并且具有大于n型包层32中的n型掺杂物的含量。因此，提供了具有优异的光提取效率的具有优异的光提取效率的发光器件，其具有发光层部分由... MgZnO 1型氧化物，以及设置在光提取表面侧的高导电性MgZnO基化合物半导体层。

5. 发明申请

US20100270568A1 Light Emitting Device and Method of Fabricating the Same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20100270568A1
公开(公告)日：2010-10-28
申请号：US12303662
申请日：2007-05-29
申请人： Yukari Suzuki , Jun Ikeda , Jun-ya Ishizaki , Shunichi Ikeda
发明人： Yukari Suzuki , Jun Ikeda , Jun-ya Ishizaki , Shunichi Ikeda
IPC分类号： H01L33/02 , H01L33/30
CPC分类号： H01L33/0079 , H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02543 , H01L21/02576 , H01L24/05 , H01L33/02 , H01L33/025 , H01L2224/04042 , H01L2224/48463
摘要： A light emitting device comprises a light emitting layer section having a double heterostructure of an n-type cladding layer, an active layer and a p-type cladding layer, each composed of AlGaInP stacked in this order. Supposing a bonding object layer having a first main surface side as p type and a second main surface side as n type, a light extraction side electrode is formed to cover the first main surface partially. An n-type transparent device substrate composed of Group III-V compound semiconductor having greater band gap energy than the active layer is bonded to the second main surface of the bonding object layer. On one sides of the transparent device substrate and the bonding object layer, a bonding surface to the other is formed, and an InGaP intermediate layer is formed to have a high concentration Si doping layer formed on the bonding surface side.
摘要翻译：发光器件包括具有由依次层叠的AlGaInP构成的n型包覆层，有源层和p型覆层的双异质结构的发光层部。假设具有第一主表面侧为p型，第二主面侧为n型的接合对象层，形成有一部分覆盖第一主面的光提取侧电极。由具有比有源层更大的带隙能量的III-V族化合物半导体构成的n型透明器件基板被接合到接合目标层的第二主表面。在透明器件基板和接合目标层的一侧上，形成彼此的接合表面，并且形成InGaP中间层以在接合表面侧上形成高浓度的Si掺杂层。

6. 发明授权

US06939731B2 Production method for light emitting element 失效
标题翻译：发光元件的制造方法
公开(公告)号：US06939731B2
公开(公告)日：2005-09-06
申请号：US10475489
申请日：2002-04-25
申请人： Jun-ya Ishizaki
发明人： Jun-ya Ishizaki
IPC分类号： C23C16/40 , C30B25/02 , C30B25/10 , C30B25/18 , H01L21/365 , H01L33/00 , H01L21/00
CPC分类号： C30B25/183 , C23C16/40 , C30B25/02 , C30B25/105 , C30B29/16 , H01L21/0242 , H01L21/02472 , H01L21/02477 , H01L21/0248 , H01L21/02483 , H01L21/02507 , H01L21/02554 , H01L21/02565 , H01L21/02579 , H01L21/0262 , H01L33/0083
摘要： When a p-type MgxZn1-xO-type layer is grown based on a metal organic vapor-phase epitaxy process, the p-type MgxZn1-xO-type layer is annealed in an oxygen-containing atmosphere during and/or after completion of the growth of the p-type MgxZn1-xO-type layer. In addition, a vapor-phase epitaxy process of a semiconductor layer is proceed while irradiating ultraviolet light to the surface of a substrate to be grown and source gasses. In addition, when a MgxZn1-xO-type buffer layer that is oriented so as to align the c-axis thereof to a thickness-wise direction is formed by an atomic layer epitaxy process, a metal monoatomic layer is grown at first. In addition, a ZnO-base semiconductor active layer is formed by using a semiconductor material mainly composed of ZnO containing Se or Te. A light emitting device is formed by using these techniques.
摘要翻译：当基于金属有机气相外延生长生长p型Mg x Zn 1-x O型层时，p型Mg < x型x 1 x-x O型层在p型Mg x x / SUB的生长期间和/或完成后在含氧气氛中退火 > Zn 1-x O型层。此外，进行半导体层的气相外延工艺，同时向要生长的基板的表面和源气体照射紫外光。此外，当形成定向为将其c轴对准其厚度方向的Mg xS x 1-x O O型缓冲层时，形成通过原子层外延工艺，首先生长金属单原子层。此外，通过使用主要由含有Se或Te的ZnO的半导体材料形成ZnO基半导体有源层。通过使用这些技术形成发光器件。

7. 发明授权

US07091526B2 Light emitting device and method of fabricating the same 失效
标题翻译：发光元件及其制造方法
公开(公告)号：US07091526B2
公开(公告)日：2006-08-15
申请号：US10852256
申请日：2004-05-25
申请人： Jun-ya Ishizaki
发明人： Jun-ya Ishizaki
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/28
摘要： A light emitting device 100 has a light emitting layer portion 9 which comprises an active layer 5 composed of an MgxZn1-xO-type oxide semiconductor, a p-type cladding layer 6 again composed of an MgxZn1-xO-type oxide semiconductor, and an n-type cladding layer 3. On the p-type cladding layer 6 of the light emitting layer portion 9, a light extraction layer 7 is configured using an oxide, where the light extraction layer 7 has a refractive index at a dominant emission wavelength of light extracted from the active layer 5 smaller than that of the cladding layers 3,6. This makes it possible to efficiently extract the light emitted from the light emitting layer portion 9 to the external of the light emitting device 100. This is it successful in providing a high-light-extraction-efficiency light emitting device having the light emitting layer portion composed of an oxide semiconductor, and a method of fabricating the same.
摘要翻译：发光器件100具有发光层部分9，该发光层部分9包括由Mg x Zn 1-x O O型氧化物半导体构成的有源层5，再次由Mg x Zn 1-x O O型氧化物半导体构成的n型包覆层6和n型覆层3。在发光层部分9的p型包覆层6上，使用氧化物构成光提取层7，其中光提取层7具有从有源层5提取的光的主发射波长的折射率小于包层3,6的尺寸。这使得可以有效地将从发光层部分9发射的光提取到发光器件100的外部。这是成功地提供具有由氧化物半导体构成的发光层部分的高光提取效率的发光器件及其制造方法。

8. 发明申请

US20050017261A1 Semiconductor light-emitting device and method for manufacturing same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20050017261A1
公开(公告)日：2005-01-27
申请号：US10500703
申请日：2003-10-30
申请人： Jun-ya Ishizaki
发明人： Jun-ya Ishizaki
IPC分类号： H01L21/20 , H01L21/205 , H01L21/365 , H01L21/477 , H01L33/12 , H01L33/16 , H01L33/28 , H01L21/00 , H01L33/00
CPC分类号： H01L33/28 , H01L21/0242 , H01L21/02422 , H01L21/02472 , H01L21/02483 , H01L21/02513 , H01L21/02554 , H01L21/02565 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/477 , H01L33/0087 , H01L33/0095
摘要： On the surface of a substrate 1, a precursory buffer layer 2′ composed of an In-base compound or a Zn-base compound, not contained in the substrate 1, is formed so as to be stacked thereon as a polycrystal layer or an amorphous layer. Before a light emitting region is formed, the precursory buffer layer 2′ is annealed for re-crystallization to thereby convert it into a buffer layer 2. This successfully provides a Zn-base semiconductor light emitting device which can readily be fabricated and capable of improving quality of the light emitting region, and a method of fabricating the same.
摘要翻译：在基板1的表面上，形成由基板1中不含有的基底间化合物或Zn基化合物构成的前体缓冲层2'，作为多晶层或非晶态层叠而形成层。在形成发光区域之前，将前体缓冲层2'退火以进行重结晶，从而将其转化为缓冲层2.这成功地提供了一种可容易地制造并能够改进的Zn基半导体发光器件发光区域的质量及其制造方法。

9. 发明申请

US20050009223A1 Zn based semiconductor luminiscent element and method for preparation thereof 审中-公开
标题翻译： Zn基半导体发光元件及其制备方法
公开(公告)号：US20050009223A1
公开(公告)日：2005-01-13
申请号：US10496667
申请日：2002-11-01
申请人： Jun-ya Ishizaki
发明人： Jun-ya Ishizaki
IPC分类号： H01L33/28 , H01L21/00 , H01L33/00
CPC分类号： H01L33/28 , H01L33/0083
摘要： A p-n junction interface 3 is formed between an n-type ZnTe1-xOx (0.5≦x≦1) layer 8 and a p-type ZnTe1-xOx (0≦x
摘要翻译：在n型ZnTe1-xOx（0.5 <= x <= 1）LAYER8和p型ZnTe1-xOx（0 <= x <0.5）LAYER7之间形成pn结界面3，并且n型ZnTeO层 8和/或p型ZnTeO层7通过p型ZnTe晶片的主表面的热氧化形成。这是成功地提供一种Zn基半导体发光器件及其制造方法，其可能在由Zn基半导体发光器件构成的发光层上的发光效率得到改善。

10. 发明授权

US07332364B2 Method of fabricating a Zn-base semiconductor light emitting device 失效
标题翻译：制造Zn基半导体发光器件的方法
公开(公告)号：US07332364B2
公开(公告)日：2008-02-19
申请号：US11475016
申请日：2006-06-27
申请人： Jun-ya Ishizaki
发明人： Jun-ya Ishizaki
IPC分类号： H01L21/00 , H01L29/221
CPC分类号： H01L33/28 , H01L33/0083
摘要： A p-n junction interface 3 is formed between an n-type ZnTe1-xOx (0.5≦x≦1) layer 8 and a p-type ZnTe1-xOx (0≦x
摘要翻译： pn结界面3形成在n型ZnTe 1-x O x x（0.5 <= x <= 1）层8和p型ZnTe < （0 <= x <0.5）层7，n型ZnTeO层8和/或p型ZnTeO层7通过热 p型ZnTe晶片的主表面的氧化。这是成功地提供一种Zn基半导体发光器件及其制造方法，其可能在由Zn基半导体发光器件构成的发光层上的发光效率得到改善。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式