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1. 发明授权

US4530746A Photosensitive resin composition 失效
标题翻译：感光树脂组合物
公开(公告)号：US4530746A
公开(公告)日：1985-07-23
申请号：US496591
申请日：1983-05-20
申请人： Kazufumi Azuma , Kazuo Nate , Mitsuo Nakatani , Hitoshi Yokono , Takeshi Endo
发明人： Kazufumi Azuma , Kazuo Nate , Mitsuo Nakatani , Hitoshi Yokono , Takeshi Endo
IPC分类号： C08F24/00 , C08F2/50 , C08F290/00 , C08F299/00 , C08F299/02 , C08G65/00 , C08G67/00 , C09D4/00 , C09D5/00 , G03F7/027
CPC分类号： C08F299/024 , G03F7/027
摘要： A photosensitive resin composition comprising (a) 10 to 90 parts by weight of at least one polymerizable monomer of the formula: ##STR1## (R is defined in the specification), (b) 90 to 10 parts by weight of at least one compound selected from the group consisting of epoxy-acrylate resins, 1,2-polybutadiene resins, polyester resins and organopolysiloxanes, all having one or more acryloyloxy or methacryloyloxy groups in their molecular end or ends, and (c) 0.05 to 5 parts by weight of a photosensitizer based on 100 parts by weight of the sum of the components (a) and (b) shows slight shrinkage and the resulting coating film is good in adhesive properties and mechanical strength.
摘要翻译：一种感光性树脂组合物，其包含（a）10至90重量份的至少一种下式的可聚合单体：（R在说明书中定义），（b）90至10重量份的至少一种化合物选自在其分子末端或末端具有一个或多个丙烯酰氧基或甲基丙烯酰氧基的环氧丙烯酸酯树脂，1,2-聚丁二烯树脂，聚酯树脂和有机聚硅氧烷，以及（c）0.05至5重量份的基于100重量份的组分（a）和（b）的总和的光敏剂显示出轻微的收缩，并且所得的涂膜具有良好的粘合性能和机械强度。

2. 发明授权

US4495218A Process for forming thin film 失效
标题翻译：薄膜成膜工艺
公开(公告)号：US4495218A
公开(公告)日：1985-01-22
申请号：US534686
申请日：1983-09-22
申请人： Kazufumi Azuma , Mitsuo Nakatani , Kazuo Nate , Masaaki Okunaka , Hitoshi Yokono
发明人： Kazufumi Azuma , Mitsuo Nakatani , Kazuo Nate , Masaaki Okunaka , Hitoshi Yokono
IPC分类号： C23C16/48 , C23C16/24 , C23C16/34 , C23C16/40 , H01L21/205 , H01L21/268 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/318 , H01L31/04 , C23C17/00
CPC分类号： H01L21/02164 , C23C16/24 , C23C16/345 , C23C16/402 , H01L21/0217 , H01L21/02211 , H01L21/02277 , H01L21/02381 , H01L21/02422 , H01L21/02425 , H01L21/02532 , H01L21/0262 , H01L21/268 , H01L21/2686 , H01L21/31612 , H01L21/3185 , Y10S148/093
摘要： A thin film of a-Si, SiO.sub.2 or Si.sub.3 N.sub.4 can be formed on a substrate using a starting material gas containing at least a polysilane of the formula Si.sub.n H.sub.2n+2 (n=2, 3 or 4) by a chemical vapor deposition method with irradiation with light with high film forming rate at lower temperatures.
摘要翻译：可以通过化学气相沉积法使用至少含有式SinH2n + 2（n = 2,3或4）的聚硅烷的原料气体在基板上形成a-Si，SiO 2或Si 3 N 4的薄膜具有在较低温度下具有高成膜速率的光。

3. 发明授权

US4544729A Photo and radiation-sensitive organopolymeric material 失效
标题翻译：照片和辐射敏感有机聚合材料
公开(公告)号：US4544729A
公开(公告)日：1985-10-01
申请号：US623168
申请日：1984-06-22
申请人： Kazuo Nate , Takashi Inoue , Hitoshi Yokono , Mitsuo Ishikawa , Makoto Kumada
发明人： Kazuo Nate , Takashi Inoue , Hitoshi Yokono , Mitsuo Ishikawa , Makoto Kumada
IPC分类号： C08G77/48 , C08G77/60 , G03F7/075 , C08G77/04
CPC分类号： C08G77/60 , C08G77/48 , G03F7/0754
摘要： A photo and radiation sensitive-organopolymeric material having at least one Si--Si).sub.n bond, wherein n is an integer of from 1 to 5 has a good resistance to dry etching, a good adhesion and a good heat resistance and is useful for finer patterning with a good resolution.
摘要翻译：具有至少一个Si-Si）n键的照片和辐射敏感有机聚合物材料，其中n为1至5的整数，具有良好的抗干蚀刻性，良好的粘附性和良好的耐热性，并且对于较细的图案分辨率好。

4. 发明授权

US4420500A Composition and process for preparing transparent conducting film 失效
标题翻译：制备透明导电薄膜的组成和工艺
公开(公告)号：US4420500A
公开(公告)日：1983-12-13
申请号：US344973
申请日：1982-02-02
申请人： Mitsuo Nakatani , Mitsuo Yamazaki , Masaaki Okunaka , Ryoichi Sudo , Kenji Tochigi , Hitoshi Yokono
发明人： Mitsuo Nakatani , Mitsuo Yamazaki , Masaaki Okunaka , Ryoichi Sudo , Kenji Tochigi , Hitoshi Yokono
IPC分类号： B01J19/12 , C03C17/25 , C07F5/00 , C07F7/22 , G02F1/1343 , H01B13/00 , H01L31/18 , B05D3/02 , B05D3/06 , H01B1/06
CPC分类号： G02F1/13439 , C03C17/253 , C07F5/003 , C07F7/2204 , H01L31/1884 , C03C2217/231 , C03C2218/11 , Y02E10/50
摘要： A transparent conducting film is prepared from a composition comprising an indium compound, a tin compound, and a solvent as essential components, the tin compound being a compound represented by the following general formula:(R).sub.a Sn(NO.sub.3).sub.b (X).sub.4-a-b (1)wherein R is an alkyl group having 1 to 4 carbon atoms, X is a hydroxyl group, a halogen atom, or a carboxyl group, and a and b are integers of 1.about.3, and a+b.ltoreq.4 by coating a substrate with the said composition, subjecting the coated substrate to ultraviolet irradiation at a substrate temperature of 200.degree. C. or higher, and heating the substrate at 400.degree. C. or higher. The composition has a long pot life and the film has a low resistance and distinguished mechanical strength, chemical resistance and etching susceptibility.
摘要翻译：由含有铟化合物，锡化合物和溶剂作为必要成分的组合物制备透明导电膜，该锡化合物是由以下通式表示的化合物：（R）aSn（NO 3）b（X）4 -ab（1）其中R是具有1至4个碳原子的烷基，X是羟基，卤素原子或羧基，a和b是1的整数3和a + b < = 4，通过用所述组合物涂布基材，在200℃或更高的基板温度下对涂覆的基材进行紫外线照射，并在400℃或更高温度下加热基材。该组合物具有长的适用期，该膜具有低电阻和显着的机械强度，耐化学性和蚀刻敏感性。

5. 发明授权

US4504646A Positive type, radiation-sensitive organic polymer materials 失效
标题翻译：正型，辐射敏感有机聚合物材料
公开(公告)号：US4504646A
公开(公告)日：1985-03-12
申请号：US550200
申请日：1983-11-09
申请人： Kazuo Nate , Takashi Inoue , Hitoshi Yokono
发明人： Kazuo Nate , Takashi Inoue , Hitoshi Yokono
IPC分类号： G03F7/004 , C08G2/14 , C08G2/20 , G03C1/72 , G03F7/039 , G03F7/075 , H01L21/027 , C08G77/06
CPC分类号： G03C1/72 , C08G2/14 , C08G2/20 , G03F7/0758
摘要： Aliphatic aldehyde polymer containing at least one Si atom in its molecular chain is a positive type resist having a very high sensitivity to radiation such as electron beams, X-rays, ion beams, etc.
摘要翻译：在其分子链中含有至少一个Si原子的脂族醛聚合物是对辐射具有非常高的灵敏度的正型抗蚀剂，例如电子束，X射线，离子束等。

6. 发明授权

US4486232A Electrode material for semi-conductor devices 失效
标题翻译：半导体器件用电极材料
公开(公告)号：US4486232A
公开(公告)日：1984-12-04
申请号：US523857
申请日：1983-08-17
申请人： Mitsuo Nakatani , Haruhiko Matsuyama , Masaaki Okunaka , Hitoshi Yokono , Tokio Isogai , Tadashi Saitoh , Sumiyuki Midorikawa
发明人： Mitsuo Nakatani , Haruhiko Matsuyama , Masaaki Okunaka , Hitoshi Yokono , Tokio Isogai , Tadashi Saitoh , Sumiyuki Midorikawa
IPC分类号： H01L31/04 , H01L21/28 , H01L21/283 , H01L21/288 , H01L29/43 , H01L31/0224 , H01B1/02
CPC分类号： H01L31/022408 , H01L31/022425 , Y02E10/50
摘要： An electrode material for semi-conductor device such as solar cells comprises Ag powders, at least one metal of zirconium, hafnium, vanadium, niobium, and tantalum, an organic binder, and an organic solvent, and, if necessary, glass, Pd powders and Pt powders.The electrodes are prepared from the electrode material by printing, drying and firing at a low temperature and have a low contact resistance without any junction breakage or increase in leak current.
摘要翻译：用于半导体器件如太阳能电池的电极材料包括Ag粉末，至少一种锆，铪，钒，铌和钽金属，有机粘合剂和有机溶剂，并且如果需要，玻璃，Pd粉末和Pt粉末。电极由电极材料通过在低温下进行印刷，干燥和烧制而制备，并且具有低接触电阻而没有任何断裂或漏电流增加。

7. 发明授权

US4347304A Process for forming metallic image 失效
标题翻译：金属图像形成工艺
公开(公告)号：US4347304A
公开(公告)日：1982-08-31
申请号：US277049
申请日：1981-06-24
申请人： Hideki Sakurai , Mitsuo Nakatani , Hitoshi Oka , Hitoshi Yokono , Tokio Isogai
发明人： Hideki Sakurai , Mitsuo Nakatani , Hitoshi Oka , Hitoshi Yokono , Tokio Isogai
IPC分类号： G03C5/58 , G03F7/004 , H05K3/18 , G03C5/00
CPC分类号： H05K3/185 , G03C5/58 , G03F7/0043 , Y10S430/143
摘要： Metallic images of uniform quality can be formed on substrates having through-holes by a process using a positive type resist characterized by using as a coating solution for the substrate a solution of a photosensitive material of (a) at least one organic compound having at least one linkage of --M--M--M ).sub.n (M=Si, Ge or Sn; n=0, 1 or more) in the molecule or (b) a mixture of at least one organic compound (a) mentioned above and at least one photosensitizer, dissolved in a solvent such as a halogenated hydrocarbon, an aromatic hydrocarbon, a heterocyclic compound, or a mixture thereof, followed by irradiation with an actinic light through a photomask and electroless plating.
摘要翻译：可以通过使用正型抗蚀剂的方法在具有通孔的基板上形成具有均匀质量的金属图像，其特征在于使用作为基底的涂布溶液的（a）至少一种有机化合物的感光材料的溶液，所述有机化合物至少具有分子中nMM（M = Si，Ge或Sn; n = 0,1或更多）的一个连接，或（b）上述至少一种有机化合物（a）和至少一种光敏剂的混合物，溶解在溶剂如卤代烃，芳族烃，杂环化合物或其混合物中，然后通过光掩模和化学镀被光化的光照射。

8. 发明授权

US4643913A Process for producing solar cells 失效
标题翻译：太阳能电池生产工艺
公开(公告)号：US4643913A
公开(公告)日：1987-02-17
申请号：US687162
申请日：1984-12-28
申请人： Masaaki Okunaka , Mitsuo Nakatani , Haruhiko Matsuyama , Hitoshi Yokono , Tokio Isogai , Tadashi Saitoh , Kunihiro Matsukuma , Sumiyuki Midorikawa , Satoru Suzuki
发明人： Masaaki Okunaka , Mitsuo Nakatani , Haruhiko Matsuyama , Hitoshi Yokono , Tokio Isogai , Tadashi Saitoh , Kunihiro Matsukuma , Sumiyuki Midorikawa , Satoru Suzuki
IPC分类号： H01L31/04 , C07F7/00 , H01L21/283 , H01L21/288 , H01L31/0216 , H01L31/0224 , H01L31/18
CPC分类号： C07F7/006 , H01L31/02168 , H01L31/022425 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A process for producing solar cells which comprises applying a composition for anti-reflection coating formation on one side of a silicon base plate having a p-n junction therein, printing an Ag paste for contact formation on predetermined areas of the coat, and heat-treating the resulting plate at a temperature of 400.degree. to 900.degree. C. to complete anti-reflection coating and a light-receiving side contact, the process being characterized in that the composition for anti-reflection coating formation contains as essential component, (a) at least one member selected from the metal-organic ligand complex compounds represented by the general formula M(OR.sub.1).sub.n (L).sub.a-n wherein M is a metal selected from Zn, Al, Ga, In, Ti, Zr, Sn, V, Nb, Ta, Mo, and W; R.sub.1 is a C.sub.1 -C.sub.18 alkyl group; L is an organic ligand which forms an non-hydrolyzable bond with the metal ion; a is the valency of the metal M; and n is an integer satisfying 1.ltoreq.n
摘要翻译：一种太阳能电池的制造方法，其特征在于，在具有pn结的硅基板的一面上涂布抗反射涂层用组合物，在所述涂层的规定区域印刷用于接触形成的Ag浆料，并对所述涂料进行热处理得到的板在400-900℃的温度下完成防反射涂层和光接收侧接触，其特征在于用于防反射涂层形成的组合物包含作为必要组分的（a）在选自由通式M（OR1）n（L）a表示的金属 - 有机配体络合物中的至少一种成分其中M是选自Zn，Al，Ga，In，Ti，Zr，Sn，V，Nb ，Ta，Mo和W; R1是C1-C18烷基; L是与金属离子形成不可水解键的有机配体; a为金属M的化合价; n为1，n为1的整数，通式（OR 1）n-1M（L）anOM（OR 1）n-1（L）a表示的水解缩合物，（b）化合物，和（c）溶剂。

9. 发明授权

US5162240A Method and apparatus of fabricating electric circuit pattern on thick and thin film hybrid multilayer wiring substrate 失效
标题翻译：在厚膜和薄膜混合多层布线基板上制作电路图案的方法和装置
公开(公告)号：US5162240A
公开(公告)日：1992-11-10
申请号：US537492
申请日：1990-06-12
申请人： Norio Saitou , Hideo Todokoro , Katsuhiro Kuroda , Satoru Fukuhara , Genya Matsuoka , Hideo Arima , Hitoshi Yokono , Takashi Inoue , Hidetaka Shigi
发明人： Norio Saitou , Hideo Todokoro , Katsuhiro Kuroda , Satoru Fukuhara , Genya Matsuoka , Hideo Arima , Hitoshi Yokono , Takashi Inoue , Hidetaka Shigi
IPC分类号： H01L21/48 , H01L23/538 , H01L23/544 , H05K1/02 , H05K1/03 , H05K1/09 , H05K3/46
CPC分类号： H05K3/4679 , H01L21/4857 , H01L23/5383 , H01L23/544 , H01L2223/5442 , H01L2223/54473 , H01L2224/16 , H01L2224/16235 , H01L2924/01014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/15174 , H05K1/0269 , H05K1/0306 , H05K1/092 , H05K2201/09781 , H05K2201/09918 , H05K3/4605 , H05K3/467
摘要： A thick and thin film hybrid multilayer wiring substrate includes an adjustment layer provided between a thick film circuit and a thin film circuit in order to adjust positions of the thick film circuit and the thin film circuit with high integration and large area of the thick and thin film hybrid substrate. The adjustment layer is formed using a direct printing process in accordance with dispersion of the shape of the thick film circuit substrate to absorb the dispersion of the substrate. Further, in order to absorb dispersion of contraction of the thick film substrate due to sintering, a position of a mark provided on the substrate is detected by an electron beam and thereafter a connection pattern is formed to be connected to a regular pattern.
摘要翻译：厚薄膜混合多层布线基板包括设置在厚膜电路和薄膜电路之间的调整层，以便调整厚膜电路和薄膜电路的位置，具有高集成度和大面积的厚薄薄膜混合基板。根据厚膜电路基板的形状的分散，使用直接印刷法形成调整层，以吸收基板的分散。此外，为了吸收由于烧结引起的厚膜基板的收缩分散，通过电子束检测设置在基板上的标记的位置，然后形成连接图案以连接到规则图案。

10. 发明授权

US5133403A Cooling arrangement for semiconductor devices and method of making the same 失效
标题翻译：用于半导体器件的冷却装置及其制造方法
公开(公告)号：US5133403A
公开(公告)日：1992-07-28
申请号：US423386
申请日：1989-10-19
申请人： Hitoshi Yokono , Takao Terabayashi , Nobuo Kayaba , Takahiro Daikoku , Shigekazu Kieda , Fumiyuki Kobayashi , Shizuo Zushi
发明人： Hitoshi Yokono , Takao Terabayashi , Nobuo Kayaba , Takahiro Daikoku , Shigekazu Kieda , Fumiyuki Kobayashi , Shizuo Zushi
IPC分类号： H01L23/373 , H01L23/433 , H01L23/473 , H05K7/20
CPC分类号： H01L23/4338 , H01L23/3733 , F28F2255/18 , H01L2224/16225
摘要： A cooling device for cooling semiconductor elements by removing heat generated from the semiconductor elements such as, for example, semiconductor integrated chips in a large-sized electronic computer. The cooling device is fashioned of a composite AlN-BN sintered material having a Vickers hardness not higher than one-fifth of that of an AlN material, and an anisotropic property of thermal conductivity in a two dimensional direction is higher than that of AlN which is isotropic in thermal conductivity. The cooling device may be mass-produced while nevertheless having a high transfer performance matching the quantity of heat generated for each semiconductor element even if the composite sintered material is uniform in shape and size. The composite sintered material is formed by a mixture of a hexagonal BN powder having an average particle diameter of not less than 1 .mu.m and an AlN powder having an average particle diameter of about 2 .mu.m, with a sintering aid being added and the powdery mixture being subjected to a hot press sintering whereby the sintered material is low in thermal conductivity in a direction parallel to an axis of a shaft of the hot press.
摘要翻译：一种用于通过从大型电子计算机中的诸如半导体集成芯片的半导体元件产生的热量来冷却半导体元件的冷却装置。该冷却装置由维氏硬度不高于AlN材料的五分之一的复合AlN-BN烧结材料制成，并且二维方向的热导率的各向异性特性比AlN的各向异性高各向同性的导热性。即使复合烧结体的形状和尺寸一致，冷却装置也可以批量生产，同时具有与每个半导体元件产生的热量匹配的高转印性能。复合烧结材料由平均粒径不小于1μm的六方晶BN粉末和平均粒径约2μm的AlN粉末的混合物形成，并加入烧结助剂。混合物进行热压烧结，由此烧结材料在与热压机的轴的轴线平行的方向上的导热性低。

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