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    • 4. 发明授权
    • Digital signal receiver
    • 数字信号接收机
    • US07957464B2
    • 2011-06-07
    • US12759535
    • 2010-04-13
    • Mitsuo Yamazaki
    • Mitsuo Yamazaki
    • H03K7/04
    • H04L25/4902H04L25/4908
    • A digital signal receiver including: a signal edge detector configured to receive a signal including a code and detect an edge of the signal; a reference point detector configured to detect a reference point for pulse width detection from a rising time point or falling time point of the edge detected by the signal edge detector; a pulse width detector configured to detect a pulse width from the rising time point or falling time point of the edge and the reference point; a sampling point determination module configured to generate a histogram of the pulse width and determines a sampling point of the code based on an analysis result of the histogram; and a sampling module configured to perform a sampling of the code based on the sampling point determined by the sampling point determination module.
    • 一种数字信号接收机,包括:信号边缘检测器,被配置为接收包括码的信号并检测信号的边缘; 参考点检测器,被配置为从由信号边缘检测器检测的边沿的上升时间点或下降时间点检测用于脉冲宽度检测的参考点; 脉冲宽度检测器,被配置为从所述边缘和所述参考点的上升时间点或下降时间点检测脉冲宽度; 采样点确定模块,被配置为生成所述脉冲宽度的直方图,并且基于所述直方图的分析结果确定所述代码的采样点; 以及采样模块,被配置为基于由所述采样点确定模块确定的采样点来执行所述代码的采样。
    • 5. 发明授权
    • Silicon thin-film and method of forming silicon thin-film
    • 硅薄膜和硅薄膜的形成方法
    • US07776670B2
    • 2010-08-17
    • US12304957
    • 2007-05-30
    • Masamichi YamashitaTakashi IwadeKohshi TaguchiMitsuo Yamazaki
    • Masamichi YamashitaTakashi IwadeKohshi TaguchiMitsuo Yamazaki
    • H01L21/00
    • C23C16/30C23C16/401H01L51/5256
    • Issue Providing a silicon film which can prevent damage of electronic devices formed on a substrate from occurrence, can prevent apparatus arrangement from becoming large-scale one, can improve coherency of a silicon thin film to a substrate, and is hardly happened crack and/or flaking, and providing a method for forming the silicon thin film.Solving Means A method for forming a silicon thin film according to the present invention is a method for forming a silicon thin film having isolation function or barrier function, on a substrate K using CVD method, and comprises a step for forming a first thin film on the substrate using plasma CVD method employing gas containing hydrogen element and a gas containing silicon element; a step for forming a second thin film using plasma CVD method employing a gas containing nitrogen element and a gas containing silicon element; and a step for forming a third thin film using plasma CVD method employing a gas containing oxygen element and a gas containing silicon element.
    • 问题提供能够防止在基板上形成的电子器件的损坏的硅膜可以防止装置排列变大,可以提高硅薄膜与基板的一致性,并且几乎不发生裂纹和/或 剥离,提供形成硅薄膜的方法。 解决方法根据本发明的形成硅薄膜的方法是使用CVD法在基板K上形成具有隔离功能或阻挡功能的硅薄膜的方法,并且包括用于形成第一薄膜的步骤 使用等离子体CVD法的基板,其使用含有氢元素的气体和含有硅元素的气体; 使用含有氮元素的气体和含有硅元素的气体的等离子体CVD法形成第二薄膜的工序; 以及使用含有氧元素的气体和含有硅元素的气体的等离子体CVD法形成第三薄膜的工序。
    • 9. 发明申请
    • SILICON THIN-FILM AND METHOD OF FORMING SILICON THIN-FILM
    • 硅薄膜和形成硅薄膜的方法
    • US20090321895A1
    • 2009-12-31
    • US12304957
    • 2007-05-30
    • Masamichi YamashitaTakashi IwadeKohshi TaguchiMitsuo Yamazaki
    • Masamichi YamashitaTakashi IwadeKohshi TaguchiMitsuo Yamazaki
    • H01L21/31H01L29/06
    • C23C16/30C23C16/401H01L51/5256
    • Issue Providing a silicon film which can prevent damage of electronic devices formed on a substrate from occurrence, can prevent apparatus arrangement from becoming large-scale one, can improve coherency of a silicon thin film to a substrate, and is hardly happened crack and/or flaking, and providing a method for forming the silicon thin film.Solving Means A method for forming a silicon thin film according to the present invention is a method for forming a silicon thin film having isolation function or barrier function, on a substrate K using CVD method, and comprises a step for forming a first thin film on the substrate using plasma CVD method employing gas containing hydrogen element and a gas containing silicon element; a step for forming a second thin film using plasma CVD method employing a gas containing nitrogen element and a gas containing silicon element; and a step for forming a third thin film using plasma CVD method employing a gas containing oxygen element and a gas containing silicon element.
    • 问题提供能够防止在基板上形成的电子器件的损坏的硅膜可以防止装置排列变大,可以提高硅薄膜与基板的一致性,并且几乎不发生裂纹和/或 剥离,提供形成硅薄膜的方法。 解决方法根据本发明的形成硅薄膜的方法是使用CVD法在基板K上形成具有隔离功能或阻挡功能的硅薄膜的方法,并且包括用于形成第一薄膜的步骤 使用等离子体CVD法的基板,其使用含有氢元素的气体和含有硅元素的气体; 使用含有氮元素的气体和含有硅元素的气体的等离子体CVD法形成第二薄膜的工序; 以及使用含有氧元素的气体和含有硅元素的气体的等离子体CVD法形成第三薄膜的工序。
    • 10. 发明申请
    • Optical disk drive and information recording method
    • 光盘驱动器和信息记录方法
    • US20050141394A1
    • 2005-06-30
    • US10938923
    • 2004-09-13
    • Mitsuo Yamazaki
    • Mitsuo Yamazaki
    • G11B7/0045G11B7/00G11B7/125G11B7/1263
    • G11B7/1263G11B7/0045
    • An optical disk drive of the present invention has a controller, which obtains saturation levels of a first reflected laser beam obtained by a laser beam with a playback light intensity and a second reflected laser beam obtained by a laser beam with a recording light intensity, in a signal processing circuit, based on the results of detecting the first and second reflected laser beams by a detector, computes the intensity of a recording laser beam output from a light source based on the saturation levels of the reflected laser beams specified by a signal processing means, and instructs a laser driving circuit to drive a laser driving signal capable of achieving the intensities of playback and recording laser beams based on the computation results.
    • 本发明的光盘驱动器具有控制器,该控制器获得通过具有回放光强度的激光束获得的第一反射激光束的饱和度水平和由具有记录光强度的激光束获得的第二反射激光束, 基于由检测器检测第一和第二反射激光束的结果的信号处理电路基于由信号处理指定的反射激光束的饱和电平计算从光源输出的记录激光束的强度 指示并且指示激光驱动电路基于计算结果驱动能够实现重放强度和记录激光束的激光驱动信号。