专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4530746A Photosensitive resin composition 失效
标题翻译：感光树脂组合物
公开(公告)号：US4530746A
公开(公告)日：1985-07-23
申请号：US496591
申请日：1983-05-20
申请人： Kazufumi Azuma , Kazuo Nate , Mitsuo Nakatani , Hitoshi Yokono , Takeshi Endo
发明人： Kazufumi Azuma , Kazuo Nate , Mitsuo Nakatani , Hitoshi Yokono , Takeshi Endo
IPC分类号： C08F24/00 , C08F2/50 , C08F290/00 , C08F299/00 , C08F299/02 , C08G65/00 , C08G67/00 , C09D4/00 , C09D5/00 , G03F7/027
CPC分类号： C08F299/024 , G03F7/027
摘要： A photosensitive resin composition comprising (a) 10 to 90 parts by weight of at least one polymerizable monomer of the formula: ##STR1## (R is defined in the specification), (b) 90 to 10 parts by weight of at least one compound selected from the group consisting of epoxy-acrylate resins, 1,2-polybutadiene resins, polyester resins and organopolysiloxanes, all having one or more acryloyloxy or methacryloyloxy groups in their molecular end or ends, and (c) 0.05 to 5 parts by weight of a photosensitizer based on 100 parts by weight of the sum of the components (a) and (b) shows slight shrinkage and the resulting coating film is good in adhesive properties and mechanical strength.
摘要翻译：一种感光性树脂组合物，其包含（a）10至90重量份的至少一种下式的可聚合单体：（R在说明书中定义），（b）90至10重量份的至少一种化合物选自在其分子末端或末端具有一个或多个丙烯酰氧基或甲基丙烯酰氧基的环氧丙烯酸酯树脂，1,2-聚丁二烯树脂，聚酯树脂和有机聚硅氧烷，以及（c）0.05至5重量份的基于100重量份的组分（a）和（b）的总和的光敏剂显示出轻微的收缩，并且所得的涂膜具有良好的粘合性能和机械强度。

2. 发明授权

US4495218A Process for forming thin film 失效
标题翻译：薄膜成膜工艺
公开(公告)号：US4495218A
公开(公告)日：1985-01-22
申请号：US534686
申请日：1983-09-22
申请人： Kazufumi Azuma , Mitsuo Nakatani , Kazuo Nate , Masaaki Okunaka , Hitoshi Yokono
发明人： Kazufumi Azuma , Mitsuo Nakatani , Kazuo Nate , Masaaki Okunaka , Hitoshi Yokono
IPC分类号： C23C16/48 , C23C16/24 , C23C16/34 , C23C16/40 , H01L21/205 , H01L21/268 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/318 , H01L31/04 , C23C17/00
CPC分类号： H01L21/02164 , C23C16/24 , C23C16/345 , C23C16/402 , H01L21/0217 , H01L21/02211 , H01L21/02277 , H01L21/02381 , H01L21/02422 , H01L21/02425 , H01L21/02532 , H01L21/0262 , H01L21/268 , H01L21/2686 , H01L21/31612 , H01L21/3185 , Y10S148/093
摘要： A thin film of a-Si, SiO.sub.2 or Si.sub.3 N.sub.4 can be formed on a substrate using a starting material gas containing at least a polysilane of the formula Si.sub.n H.sub.2n+2 (n=2, 3 or 4) by a chemical vapor deposition method with irradiation with light with high film forming rate at lower temperatures.
摘要翻译：可以通过化学气相沉积法使用至少含有式SinH2n + 2（n = 2,3或4）的聚硅烷的原料气体在基板上形成a-Si，SiO 2或Si 3 N 4的薄膜具有在较低温度下具有高成膜速率的光。

3. 发明授权

US4604294A Process for forming an organic thin film 失效
标题翻译：用于形成有机薄膜的方法
公开(公告)号：US4604294A
公开(公告)日：1986-08-05
申请号：US660230
申请日：1984-10-12
申请人： Masahiro Tanaka , Kazufumi Azuma , Kazuo Nate , Mitsuo Nakatani
发明人： Masahiro Tanaka , Kazufumi Azuma , Kazuo Nate , Mitsuo Nakatani
IPC分类号： G03C1/76 , B05D3/06 , B05D7/24
CPC分类号： B05D1/60 , B05D3/06
摘要： An organic thin film consisting essentially of an organic compound is formed on a substrate surface by vacuum vapor deposition by exposing the organic compound as a vapor source to a laser beam having an energy level corresponding to that of the chemical bond of the organic compound, thereby sputtering the organic compound onto a substrate surface in vacuum and forming the organic thin film thereon. When a light or radiation-sensitive organic compound is used as the vapor source, a light or radiation-sensitive resist film is formed. The thin film thus formed retains the original chemical structure of the vapor source, and has a good flatness. Resolvability of resist film is improved owing to the absence of pin holes and particulate matters. A resist film having a higher sensitivity and a better contrast is formed by heating the substrate during the vapor deposition.
摘要翻译：通过将有机化合物作为蒸汽源暴露于具有与有机化合物的化学键的能级对应的能级的激光束，通过真空汽相沉积在基板表面上形成基本上由有机化合物构成的有机薄膜，由此在真空中将有机化合物溅射到基板表面上并在其上形成有机薄膜。当使用光或辐射敏感的有机化合物作为蒸气源时，形成光或辐射敏感的抗蚀剂膜。由此形成的薄膜保持蒸气源的原始化学结构，并且具有良好的平坦度。由于没有针孔和颗粒物质，抗蚀剂膜的可分离性得到改善。通过在气相沉积期间加热基底来形成具有更高灵敏度和更好对比度的抗蚀剂膜。

4. 发明申请

US20080230725A1 CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, DEVICE, AND LIGHT MODULATION ELEMENT 有权
标题翻译：结晶装置，结晶方法，装置和光调制元件
公开(公告)号：US20080230725A1
公开(公告)日：2008-09-25
申请号：US12051213
申请日：2008-03-19
申请人： Yukio TANIGUCHI , Masakiyo Matsumura , Kazufumi Azuma , Tomoya Kato , Takahiko Endo
发明人： Yukio TANIGUCHI , Masakiyo Matsumura , Kazufumi Azuma , Tomoya Kato , Takahiko Endo
IPC分类号： H01L21/268 , H01J37/22
CPC分类号： B23K26/066
摘要： A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 μm or below.
摘要翻译：结晶装置包括光调制元件和形成光学系统，其形成基于在照射表面上透过光调制元件的光的光强度分布。结晶装置用具有光强度分布的光照射非单晶半导体膜以产生结晶半导体膜。光强度的至少一个等距线的曲率半径沿着照射面上的光强度分布中的强度线基本上变化，并且至少部分等距线的曲率半径具有0.3μm的最小值或下面。

5. 发明申请

US20070105402A1 FILM-FORMING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING DISPLAY DEVICE, AND DISPLAY DEVICE 失效
标题翻译：薄膜形成方法，制造半导体器件的方法，半导体器件，制造显示器件的方法和显示器件
公开(公告)号：US20070105402A1
公开(公告)日：2007-05-10
申请号：US11619508
申请日：2007-01-03
申请人： Masashi Goto , Kazufumi Azuma , Yukihiko Nakata
发明人： Masashi Goto , Kazufumi Azuma , Yukihiko Nakata
IPC分类号： H01L21/00
CPC分类号： H01L29/78696 , C23C16/401 , G02F1/1368 , H01L21/02164 , H01L21/02178 , H01L21/02181 , H01L21/02183 , H01L21/02189 , H01L21/02274 , H01L21/31608 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645
摘要： Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total pressure being not smaller than 85%, i.e., 85%≦Pr
摘要翻译：公开了一种成膜方法，包括向等离子体处理室供给包括硅化合物气体，氧化气体和稀有气体的至少三种气体，稀土气体（Pr）基分压的百分比总压不小于85％，即85％

6. 发明申请

US20080105650A1 PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20080105650A1
公开(公告)日：2008-05-08
申请号：US11969500
申请日：2008-01-04
申请人： Hideo SUGAI , Tetsuya Ide , Atsushi Sasaki , Kazufumi Azuma
发明人： Hideo SUGAI , Tetsuya Ide , Atsushi Sasaki , Kazufumi Azuma
IPC分类号： B44C1/22 , C23F1/00 , H05H1/24 , C23C16/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32834
摘要： A plasma processing device reduces the pressure inside a vacuum waveguide which propagates microwave to a vacuum of a high degree, thereby preventing abnormal discharge in the vacuum waveguide and around a slot plate, and reduces the difference in pressure between the processing chamber and the vacuum waveguide, thereby lowering the stress applied on the slot plate and a dielectric member for generating surface plasma, thus carrying out high-quality plasma processing.
摘要翻译：等离子体处理装置降低真空波导内的压力，将真空波导传播到高真空度，从而防止真空波导和槽板周围的异常放电，并且减小处理室和真空波导之间的压力差从而降低施加在槽板上的应力和用于产生表面等离子体的电介质构件，从而进行高质量的等离子体处理。

7. 发明授权

US07311796B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07311796B2
公开(公告)日：2007-12-25
申请号：US10681615
申请日：2003-10-08
申请人： Masashi Goto , Yukihiko Nakata , Kazufumi Azuma , Tetsuya Okamoto
发明人： Masashi Goto , Yukihiko Nakata , Kazufumi Azuma , Tetsuya Okamoto
IPC分类号： H01L21/306 , C23C16/00 , C23C14/34
CPC分类号： H01J37/32192 , C23C16/511
摘要： A plasma processing apparatus comprises: a chamber 12 having at least one opening and for generating plasma; a dielectric member 14 provided to cover the opening air-tightly; at least one wave guide 16 provided in the exterior of the chamber such that the one end side opposes the dielectric member; an electromagnetic wave source 20 provided on the other end side of the wave guide; a plurality of holes 38, 40, 42, 44, 46 provided on a surface opposing the dielectric member of the wave guide; and hole area adjusting means 18 provided in at least one of the above-mentioned holes so as to adjust the opening area of the hole.
摘要翻译：等离子体处理装置包括：具有至少一个开口并用于产生等离子体的室12; 设置成气密地覆盖开口的电介质部件14; 至少一个波导16，其设置在所述室的外部，使得所述一端侧与所述电介质构件相对; 设置在波导管的另一端侧的电磁波源20; 设置在与波导的电介质构件相对的表面上的多个孔38,40,42,44,46; 以及设置在至少一个所述孔中的孔区域调节装置18，以调节孔的开口面积。

8. 发明申请

US20070034157A1 Plasma processing apparatus and plasma processing method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20070034157A1
公开(公告)日：2007-02-15
申请号：US11584566
申请日：2006-10-23
申请人： Yukihiko Nakata , Kazufumi Azuma , Tetsuya Okamoto , Masashi Goto
发明人： Yukihiko Nakata , Kazufumi Azuma , Tetsuya Okamoto , Masashi Goto
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32229 , C23C16/511 , H01J37/32192
摘要： Disclosed is a plasma processing apparatus for performing a plasma processing, comprising an electromagnetic wave source for generating an electromagnetic wave, a rectangular waveguide, a plurality of slots formed in the rectangular waveguide and constituting a waveguide antenna, an electromagnetic wave radiation window consisting of a dielectric body, and a vacuum chamber, wherein a plasma is generated by an electromagnetic wave radiated from the slots into the vacuum chamber through the electromagnetic wave radiation window, the plasma processing apparatus being constructed to include an electromagnetic wave distributing waveguide portion for distributing the electromagnetic wave generated from the electromagnetic wave source into each of the waveguides, the plural waveguides being branched from the electric field plane or a plane perpendicular to the magnetic field plane of the electromagnetic wave distributing waveguide portion.
摘要翻译：公开了一种用于执行等离子体处理的等离子体处理装置，包括用于产生电磁波的电磁波源，矩形波导，形成在矩形波导中并构成波导天线的多个槽，电磁波辐射窗，电介质体和真空室，其中通过电磁波辐射窗通过从槽辐射到真空室中的电磁波产生等离子体，等离子体处理装置被构造成包括用于分配电磁波的电磁波分配波导部分从电磁波源产生的每个波导的波形，多个波导从电场平面或与电磁波分配波导部分的磁场平面垂直的平面分支。

9. 发明申请

US20060090704A1 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US20060090704A1
公开(公告)日：2006-05-04
申请号：US11259190
申请日：2005-10-27
申请人： Tetsuya Ide , Atsushi Sasaki , Kazufumi Azuma , Yukihiko Nakata
发明人： Tetsuya Ide , Atsushi Sasaki , Kazufumi Azuma , Yukihiko Nakata
IPC分类号： C23C16/00
CPC分类号： H01J37/32238 , H01J37/32192
摘要： In a plasma processing apparatus, electromagnetic waves are radiated from slots of waveguides into a processing chamber via dielectric windows that are supported on beams, thereby generating a plasma. A substrate, which is an object of processing, is processed by the generated plasma. Dielectric plates are attached to those surfaces of the beams, which are opposed to the processing chamber. The thickness of each dielectric plate is set at ½ or more of the intra-dielectric wavelength of the electromagnetic waves. Using the plasma processing apparatus, a large-area processing can uniformly be performed.
摘要翻译：在等离子体处理装置中，电磁波通过波导管的电介质窗从波导槽从辐射到处理室中，从而产生等离子体。作为处理对象的基板由所生成的等离子体进行处理。电介质板连接到与处理室相对的梁的那些表面。每个电介质板的厚度被设定为电磁波的介电质内波长的1/2以上。使用等离子体处理装置可以均匀地进行大面积的处理。

10. 发明授权

US08009345B2 Crystallization apparatus, crystallization method, device, and light modulation element 有权
标题翻译：结晶装置，结晶方法，装置和光调制元件
公开(公告)号：US08009345B2
公开(公告)日：2011-08-30
申请号：US12962750
申请日：2010-12-08
申请人： Yukio Taniguchi , Masakiyo Matsumura , Kazufumi Azuma , Tomoya Kato , Takahiko Endo
发明人： Yukio Taniguchi , Masakiyo Matsumura , Kazufumi Azuma , Tomoya Kato , Takahiko Endo
IPC分类号： G02F1/01
CPC分类号： B23K26/066
摘要： A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 μm or below.
摘要翻译：结晶装置包括光调制元件和形成光学系统，其形成基于在照射表面上透过光调制元件的光的光强度分布。结晶装置用具有光强度分布的光照射非单晶半导体膜以产生结晶半导体膜。光强度的至少一个等距线的曲率半径沿着照射面上的光强度分布中的强度线实质上变化，并且至少部分等距线的曲率半径具有0.3μm的最小值或下面。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式