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1. 发明申请

US20060106486A1 NC hole-machining programming device 有权
标题翻译： NC孔加工编程装置
公开(公告)号：US20060106486A1
公开(公告)日：2006-05-18
申请号：US11256192
申请日：2005-10-24
申请人： Katsunori Tanaka , Susumu Matsubara , Yoshiyuki Hattori , Hiroyoshi Imazu , Takashi Kamiya
发明人： Katsunori Tanaka , Susumu Matsubara , Yoshiyuki Hattori , Hiroyoshi Imazu , Takashi Kamiya
IPC分类号： G06F19/00
CPC分类号： G05B19/40938 , Y02P90/265
摘要： An NC hole-machining programming device according to this present invention includes: a tool information storing unit for storing tool information including types and sizes of tools used for hole machining; a form recognizing unit for extracting a cylindrical surface and conical surface as a local geometry which constitutes a hole-machining form of target objects based on CAD data; a machining method determining unit which generates a hole-machining-form pattern based on the hole-machining form detected by the form recognizing unit and determine machining methods based on the hole-machining-form patterns; a tool determining unit for selecting a tool in accordance with the machining methods determined by the machining method determining unit with reference to the tool information; a tool path determining unit which determines a tool path for each tool selected by the tool determining unit; and an NC program generating unit which generates a NC programs based on the tool paths determined by the tool path determining unit.
摘要翻译：根据本发明的NC孔加工编程装置包括：刀具信息存储单元，用于存储包括用于孔加工的刀具的类型和尺寸的刀具信息; 一种用于根据CAD数据提取圆柱形表面和圆锥形表面作为构成目标对象的孔加工形式的局部几何形状的形式识别单元; 加工方法确定单元，其基于由所述形状识别单元检测到的孔加工形式产生孔加工形式图案，并且基于所述孔加工形式图案确定加工方法; 工具确定单元，用于参照所述工具信息，根据由所述加工方法确定单元确定的加工方法来选择工具; 刀具路径确定单元，其确定由所述刀具确定单元选择的每个刀具的刀具路径; 以及NC程序生成单元，其基于由刀具路径判定单元确定的刀具路径生成NC程序。

2. 发明授权

US07349757B2 NC hole-machining programming device and method 有权
标题翻译： NC孔加工编程装置及方法
公开(公告)号：US07349757B2
公开(公告)日：2008-03-25
申请号：US11256192
申请日：2005-10-24
申请人： Katsunori Tanaka , Susumu Matsubara , Yoshiyuki Hattori , Hiroyoshi Imazu , Takashi Kamiya
发明人： Katsunori Tanaka , Susumu Matsubara , Yoshiyuki Hattori , Hiroyoshi Imazu , Takashi Kamiya
IPC分类号： G06F19/00
CPC分类号： G05B19/40938 , Y02P90/265
摘要： A numerical control (NC) hole-machining programming device includes: a tool information storing unit for storing tool information, including types and sizes of tools used for hole machining; a form recognizing unit for extracting a cylindrical surface and conical surface as a local geometry which constitutes a hole-machining form of target objects based on CAD data; a machining method determining unit which generates a hole-machining-form pattern based on the hole-machining form detected by the form recognizing unit and determines machining methods based on the hole-machining-form pattern; a tool determining unit for selecting a tool in accordance with the machining methods determined by the machining method determining unit with reference to the tool information; a tool path determining unit which determines a tool path for each tool selected by the tool determining unit; and an NC program generating unit which generates an NC program based on the tool paths determined by the tool path determining unit.
摘要翻译：一种数控加工编程装置，包括：刀具信息存储单元，用于存储包括用于孔加工的刀具的类型和尺寸的刀具信息; 一种用于根据CAD数据提取圆柱形表面和圆锥形表面作为构成目标对象的孔加工形式的局部几何形状的形式识别单元; 加工方法确定单元，其基于由所述形状识别单元检测到的所述孔加工形式产生孔加工形式图案，并且基于所述孔加工形式图案确定加工方法; 工具确定单元，用于参照所述工具信息，根据由所述加工方法确定单元确定的加工方法来选择工具; 刀具路径确定单元，其确定由所述刀具确定单元选择的每个刀具的刀具路径; 以及NC程序生成单元，其基于由刀具路径判定单元确定的刀具路径生成NC程序。

3. 发明申请

US20130129468A1 METHOD OF MOUNTING ELECTRONIC PARTS 有权
标题翻译：安装电子部件的方法
公开(公告)号：US20130129468A1
公开(公告)日：2013-05-23
申请号：US13813802
申请日：2011-06-21
申请人： Teppei Kawaguchi , Takahiro Noda , Takuya Yamazaki , Toru Chikuma , Yoshiyuki Hattori
发明人： Teppei Kawaguchi , Takahiro Noda , Takuya Yamazaki , Toru Chikuma , Yoshiyuki Hattori
IPC分类号： H05K13/02
CPC分类号： H05K13/02 , H05K13/0061 , H05K13/08
摘要： In an electronic component mounting method, electronic components are picked up from a component supply unit in which first and second tray supply mechanisms are arranged, and mounted on substrates. In the method, a first substrate and a second substrate different in type from the first substrate are transported by first and second substrate transport lanes, respectively, and a first component to be mounted on the first substrate and a second component to be mounted on the second substrate are supplied by the first and second tray supply mechanisms, respectively. If use stop setting indicating that the pickup of the electronic components is no longer conducted is enabled in one tray supply mechanism, the controller prohibits an access of a mounting head to the one tray supply mechanism, and permits an operation access of an operator to a tray housing unit of the one tray supply mechanism.
摘要翻译：在电子部件安装方法中，从配置有第一和第二托盘供给机构的部件供给部拾取电子部件，并安装在基板上。在该方法中，与第一基板不同类型的第一基板和第二基板分别由第一和第二基板输送通道传送，并且第一部件将被安装在第一基板上，第二部件被安装在第一基板第二基板分别由第一和第二托盘供给机构供应。如果在一个托盘供给机构中使能表示电子部件的拾取不再被进行的停止设置，则控制器禁止安装头进入一个托盘供给机构，并且允许操作者对操作者进行操作一个托盘供应机构的托盘容纳单元。

4. 发明授权

US08022477B2 Semiconductor apparatus having lateral type MIS transistor 有权
标题翻译：具有横向型MIS晶体管的半导体装置
公开(公告)号：US08022477B2
公开(公告)日：2011-09-20
申请号：US12071411
申请日：2008-02-21
申请人： Nozomu Akagi , Shigeki Takahashi , Takashi Nakano , Yasushi Higuchi , Tetsuo Fujii , Yoshiyuki Hattori , Makoto Kuwahara
发明人： Nozomu Akagi , Shigeki Takahashi , Takashi Nakano , Yasushi Higuchi , Tetsuo Fujii , Yoshiyuki Hattori , Makoto Kuwahara
IPC分类号： H01L29/66
CPC分类号： H01L29/7817 , H01L27/0738 , H01L29/0696 , H01L29/41758 , H01L29/42368 , H01L29/435 , H01L29/4933 , H01L29/7824 , H01L29/7835
摘要： A semiconductor apparatus comprises: a semiconductor substrate; and a lateral type MIS transistor disposed on a surface part of the semiconductor substrate. The lateral type MIS transistor includes: a line coupled with a gate of the lateral type MIS transistor; a polycrystalline silicon resistor that is provided in the line, and that has a conductivity type opposite to a drain of the lateral type MIS transistor; and an insulating layer through which a drain voltage of the lateral type MIS transistor is applied to the polycrystalline silicon resistor.
摘要翻译：半导体装置包括：半导体衬底; 以及设置在半导体衬底的表面部分上的横向型MIS晶体管。横向型MIS晶体管包括：与横向型MIS晶体管的栅极耦合的线; 该多晶硅电阻器设置在该线路中，并且具有与横向型MIS晶体管的漏极相反的导电类型; 以及绝缘层，横向型MIS晶体管的漏极电压通过该绝缘层施加到多晶硅电阻器。

5. 发明授权

US07671636B2 Switching circuit and driving circuit for transistor 有权
公开(公告)号：US07671636B2
公开(公告)日：2010-03-02
申请号：US11723967
申请日：2007-03-22
申请人： Takaaki Aoki , Shoji Mizuno , Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
发明人： Takaaki Aoki , Shoji Mizuno , Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
IPC分类号： H03K3/00
CPC分类号： H01L27/0629 , H01L27/0255 , H03K17/063 , H03K17/165 , H03K17/168 , H03K17/567 , H03K17/687 , H03K2217/0036
摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

6. 发明授权

US07553731B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07553731B2
公开(公告)日：2009-06-30
申请号：US11806862
申请日：2007-06-05
申请人： Shoichi Yamauchi , Yoshiyuki Hattori , Kyoko Okada
发明人： Shoichi Yamauchi , Yoshiyuki Hattori , Kyoko Okada
IPC分类号： H01L21/336 , H01L21/04
CPC分类号： H01L29/7811 , H01L29/0615 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/41741 , H01L29/66734 , H01L29/7813
摘要： A semiconductor device having SJ structure has a peripheral region having a higher withstand voltage than the withstand voltage of the cell region. A semiconductor upper layer including second conductivity-type impurities and a semiconductor lower layer including first conductivity-type impurities whose concentration is lower than the first portion region constituting the combination of the cell region are formed in the semiconductor layer of the peripheral region. A field oxide layer is formed on a surface of the semiconductor upper layer.
摘要翻译：具有SJ结构的半导体器件具有比电池区域的耐电压更高的耐受电压的周边区域。在周边区域的半导体层中形成有包含第二导电型杂质的半导体上层和包含第一导电型杂质的半导体下层，该第一导电型杂质的浓度低于构成该单元区域组合的第一部分区域。在半导体上层的表面上形成场氧化物层。

7. 发明授权

US07458147B2 Method for determining whether a component holder is defective 有权
标题翻译：用于确定部件保持器是否有缺陷的方法
公开(公告)号：US07458147B2
公开(公告)日：2008-12-02
申请号：US10522978
申请日：2003-08-07
申请人： Takeyuki Kawase , Toshiyuki Kino , Takanori Yoshitake , Kimiaki Sano , Yoshiyuki Hattori , Takashi Yazawa , Hiroshi Uchiyama , Youichi Tanaka , Shigeki Imafuku , Iwao Kanetaka , Tamaki Ogura
发明人： Takeyuki Kawase , Toshiyuki Kino , Takanori Yoshitake , Kimiaki Sano , Yoshiyuki Hattori , Takashi Yazawa , Hiroshi Uchiyama , Youichi Tanaka , Shigeki Imafuku , Iwao Kanetaka , Tamaki Ogura
IPC分类号： H05K3/30
CPC分类号： H05K13/08 , H05K13/0409 , Y10T29/4913 , Y10T29/49131
摘要： The present invention provides a device and a method for determining whether or not a component holder is good, which enable detecting component holders that are to affect correct component recognition and further enable preventing interferences between constituent devices, a component mounting apparatus with the determining device, and a component mounting method. The determining device has an illuminating device, a CCD camera and a controller to determine whether or not a suction nozzle is good based on luminance at a component hold face of the suction nozzle. The suction nozzle having light reflectance of the component hold face increased to a level whereat a correct recognition of an electronic component held by the suction nozzle is affected, can be detected accordingly. An interference preventing device is also provided, so that interference between the CCD camera and the suction nozzle can be prevented.
摘要翻译：本发明提供一种用于确定部件保持器是否良好的装置和方法，其使得能够检测部件保持器能够影响正确的部件识别，并且还能够防止构成装置之间的干扰，具有确定装置的部件安装装置，和组件安装方法。确定装置具有照明装置，CCD照相机和控制器，用于基于吸嘴的部件保持面处的亮度来确定吸嘴是否良好。具有成分保持面的光反射率的吸嘴能够相应地检测到由吸嘴保持的电子部件的正确识别受到影响的程度。还提供防干扰装置，从而可以防止CCD照相机和吸嘴之间的干涉。

8. 发明申请

US20080012610A1 Switching circuit and driving circuit for transistor 有权
标题翻译：晶体管开关电路和驱动电路
公开(公告)号：US20080012610A1
公开(公告)日：2008-01-17
申请号：US11723967
申请日：2007-03-22
申请人： Takaaki Aoki , Shoji Mizuno , Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
发明人： Takaaki Aoki , Shoji Mizuno , Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
IPC分类号： H03K3/00 , H03K17/00
CPC分类号： H01L27/0629 , H01L27/0255 , H03K17/063 , H03K17/165 , H03K17/168 , H03K17/567 , H03K17/687 , H03K2217/0036
摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.
摘要翻译：开关电路包括：具有第一电极，第二电极和控制电极的晶体管; 齐纳二极管; 和电容器。第一电极和第二电极之间的连接能够通过切换晶体管的控制电压来暂时地在状态和非导通状态之间切换。齐纳二极管和电容器串联耦合在晶体管的第一电极和控制电极之间。第一电极是漏极或集电极。

9. 发明申请

US20060208334A1 Semiconductor device having super junction structure and method for manufacturing the same 有权
标题翻译：具有超结结构的半导体器件及其制造方法
公开(公告)号：US20060208334A1
公开(公告)日：2006-09-21
申请号：US11366613
申请日：2006-03-03
申请人： Shoichi Yamauchi , Yoshiyuki Hattori , Kyoko Okada
发明人： Shoichi Yamauchi , Yoshiyuki Hattori , Kyoko Okada
IPC分类号： H01L29/76 , H01L21/336
CPC分类号： H01L29/7811 , H01L29/0615 , H01L29/0634 , H01L29/0657 , H01L29/1095 , H01L29/402 , H01L29/41741 , H01L29/66734 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A super junction type semiconductor device includes a first semiconductor layer of a first conductivity type, a super junction structure, and a second semiconductor layer of a second conductivity type. The thickness of the second semiconductor layer varies such that the thickness in the peripheral region is greater than that in the active region, which is used as a body region. Therefore, a depletion layer in the peripheral region expands sufficiently in the thickened portion of the second semiconductor layer as well as in the super junction structure. Thus, the avalanche withstanding capability is improved.
摘要翻译：超结型半导体器件包括第一导电类型的第一半导体层，超结结构和第二导电类型的第二半导体层。第二半导体层的厚度变化，使得周边区域的厚度大于用作体区的有源区域中的厚度。因此，外围区域的耗尽层在第二半导体层的增厚部分以及超结结构中充分膨胀。因此，雪崩承受能力得到改善。

10. 发明申请

US20060043478A1 Semiconductor device having super junction structure and method for manufacturing the same 有权
标题翻译：具有超结结构的半导体器件及其制造方法
公开(公告)号：US20060043478A1
公开(公告)日：2006-03-02
申请号：US11211524
申请日：2005-08-26
申请人： Hitoshi Yamaguchi , Tomoatsu Makino , Yoshiyuki Hattori , Kyoko Okada
发明人： Hitoshi Yamaguchi , Tomoatsu Makino , Yoshiyuki Hattori , Kyoko Okada
IPC分类号： H01L29/76
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0696 , H01L29/41741 , H01L29/66734 , H01L29/7813
摘要： A semiconductor device includes: a center region; a periphery region; and a semiconductor layer including pairs of a first region having a first impurity amount and a second region having a second impurity amount. The first and the second regions are alternately aligned in a plane. The periphery region includes an utmost outer and an utmost inner periphery pairs. The utmost outer periphery pair has a difference between the second and the first impurity amounts, which is smaller than a maximum difference in the periphery region. The utmost inner periphery pair has a difference between the second and the first impurity amounts, which is larger than a difference in the center region.
摘要翻译：半导体器件包括：中心区域; 外围区域以及包括具有第一杂质量的第一区域和具有第二杂质量的第二区域的对的半导体层。第一和第二区域在平面中交替排列。周边区域包括最外部的和最外部的内周边对。最外周边对具有第二和第一杂质量之间的差异，其小于周边区域的最大差异。最大的内周对具有第二和第一杂质量之间的差异，其大于中心区域的差。

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