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1. 发明授权

US09216609B2 Radical etching apparatus and method 有权
标题翻译：激光刻蚀装置及方法
公开(公告)号：US09216609B2
公开(公告)日：2015-12-22
申请号：US13981277
申请日：2012-02-01
申请人： Hiroaki Inoue , Yasushi Higuchi , Michio Ishikawa
发明人： Hiroaki Inoue , Yasushi Higuchi , Michio Ishikawa
IPC分类号： B44C1/22 , H01J37/32 , H01L21/311
CPC分类号： B44C1/227 , H01J37/32192 , H01L21/31116
摘要： A radical etching apparatus comprising a vacuum chamber for a substrate to be treated; a pipe pathway, connected to the vacuum chamber, a zone for generating plasma and a gas introduction device through which N2 and at least one of H2 and NH3 can be introduced; a microwave applying microwaves to the interior of the pipe pathway; a gas introducer as a source of supply for F, between the vacuum chamber and the zone; and a shower plate. A method comprises introducing N2 and at least one of H2 and NH3 into a pipe pathway and applying microwaves. The gas mixture is decomposed by the plasma forming decomposition products as active species which react with F during transportation to the vacuum chamber to make radicals. An SiO2 layer on the substrate etched in the vacuum chamber, by irradiating the substrate with the radicals through the shower plate.
摘要翻译：一种激进蚀刻装置，包括用于待处理基板的真空室; 连接到真空室的管道，用于产生等离子体的区域和气体引入装置，通过该导入装置可以引入N 2和至少一个H 2和NH 3; 将微波应用到管道通道的内部; 作为F的供气源的气体导入器，位于真空室和区域之间; 和淋浴板。一种方法包括将N2和H2和NH3中的至少一种引入管道并施加微波。气体混合物被等离子体形成分解产物分解为活性物质，在与真空室运输过程中与F反应形成自由基。在真空室中蚀刻的衬底上的SiO 2层，通过淋浴板将自由基照射到衬底上。

2. 发明申请

US20130306599A1 RADICAL ETCHING APPARATUS AND METHOD 有权
标题翻译：放射性蚀刻装置和方法
公开(公告)号：US20130306599A1
公开(公告)日：2013-11-21
申请号：US13981277
申请日：2012-02-01
申请人： Hiroaki Inoue , Yasushi Higuchi , Michio Ishikawa
发明人： Hiroaki Inoue , Yasushi Higuchi , Michio Ishikawa
IPC分类号： B44C1/22
CPC分类号： B44C1/227 , H01J37/32192 , H01L21/31116
摘要： A radical etching apparatus comprising a vacuum chamber for a substrate to be treated; a pipe pathway, connected to the vacuum chamber, a zone for generating plasma and with a gas introduction device through which N2 and at least one of H2 and NH3 can be introduced; a microwave applying microwaves to the interior of the pipe pathway; a gas introducer as a source of supply for F, between the vacuum chamber and the zone; and a shower plate. A method comprises introducing N2 and at least one of H2 gas and NH3 into a pipe pathway and applying microwaves. The gas mixture is decomposed by the plasma forming decomposition products as active species which react with F during transportation to a the vacuum chamber to make radicals. An SiO2 layer on a the substrate etched in the vacuum chamber, by irradiating the substrate with the radicals through a the shower plate.
摘要翻译：一种激进蚀刻装置，包括用于待处理基板的真空室; 连接到真空室的管道，用于产生等离子体的区域和具有气体引入装置的管道，N2和H2和NH3中的至少一个可以通过该导入装置引入; 将微波应用到管道通道的内部; 作为F的供气源的气体导入器，位于真空室和区域之间; 和淋浴板。一种方法包括将N 2和至少一种H 2气和NH 3引入管道并施加微波。气体混合物被等离子体形成分解产物分解为活性物质，它们在与真空室运输过程中与F反应形成自由基。在真空室中蚀刻的基板上的SiO 2层，通过喷淋板照射基板。

3. 发明授权

US08022477B2 Semiconductor apparatus having lateral type MIS transistor 有权
标题翻译：具有横向型MIS晶体管的半导体装置
公开(公告)号：US08022477B2
公开(公告)日：2011-09-20
申请号：US12071411
申请日：2008-02-21
申请人： Nozomu Akagi , Shigeki Takahashi , Takashi Nakano , Yasushi Higuchi , Tetsuo Fujii , Yoshiyuki Hattori , Makoto Kuwahara
发明人： Nozomu Akagi , Shigeki Takahashi , Takashi Nakano , Yasushi Higuchi , Tetsuo Fujii , Yoshiyuki Hattori , Makoto Kuwahara
IPC分类号： H01L29/66
CPC分类号： H01L29/7817 , H01L27/0738 , H01L29/0696 , H01L29/41758 , H01L29/42368 , H01L29/435 , H01L29/4933 , H01L29/7824 , H01L29/7835
摘要： A semiconductor apparatus comprises: a semiconductor substrate; and a lateral type MIS transistor disposed on a surface part of the semiconductor substrate. The lateral type MIS transistor includes: a line coupled with a gate of the lateral type MIS transistor; a polycrystalline silicon resistor that is provided in the line, and that has a conductivity type opposite to a drain of the lateral type MIS transistor; and an insulating layer through which a drain voltage of the lateral type MIS transistor is applied to the polycrystalline silicon resistor.
摘要翻译：半导体装置包括：半导体衬底; 以及设置在半导体衬底的表面部分上的横向型MIS晶体管。横向型MIS晶体管包括：与横向型MIS晶体管的栅极耦合的线; 该多晶硅电阻器设置在该线路中，并且具有与横向型MIS晶体管的漏极相反的导电类型; 以及绝缘层，横向型MIS晶体管的漏极电压通过该绝缘层施加到多晶硅电阻器。

4. 发明申请

US20090030210A1 Process for Producing Optically Active 2-Alkylcysteine, Derivative Thereof, and Processes for Production 审中-公开
标题翻译：生产光活性2-烷基半胱氨酸，衍生物及其制备方法
公开(公告)号：US20090030210A1
公开(公告)日：2009-01-29
申请号：US12234016
申请日：2008-09-19
申请人： Yasushi Higuchi , Akinori Tanaka , Ryuji Hasemi , Masaki Sugita
发明人： Yasushi Higuchi , Akinori Tanaka , Ryuji Hasemi , Masaki Sugita
IPC分类号： C07D277/06
CPC分类号： C12P13/12 , C07B2200/07 , C07C319/02 , C07D277/06 , C07D277/60 , C07C323/58
摘要： There is provided a process for producing an optically active 2-alkylcysteine or a salt thereof, characterized by allowing cells of microorganism or treated products thereof having an activity of stereoselective hydrolysis of the amide bond of a 2-alkyl-L-cysteinamide or a salt thereof to act on a 2-alkylcysteinamide consisting of a mixture of D- and L-isomers or a salt thereof; and allowing the obtained 2-alkyl-L-cysteine and 2-alkyl-D-cysteinamide to react with an aldehyde or a ketone, or an acetal or ketal thereof, so as to derive therefrom a 4-alkylthiazolidine-4-carboxylic acid or a salt thereof and a 4-alkylthiazolidine-4-carboxamide or a salt thereof, thereby efficiently separating and obtaining a 2-alkyl-L-cysteine or a salt thereof, or a 2-alkyl-D-cysteine or a salt thereof. There is also provided a process for producing a 4-alkylthiazolidine-4-carboxylic acid or a salt thereof from the 2-alkylcysteine or a salt thereof.
摘要翻译：提供了一种制备光学活性2-烷基半胱氨酸或其盐的方法，其特征在于使微生物或其处理产物的细胞具有立体选择性水解2-烷基-L-半胱氨酰胺或盐的酰胺键的活性作用于由D-和L-异构体的混合物或其盐组成的2-烷基半胱胺酰胺; 并使得到的2-烷基-L-半胱氨酸和2-烷基-D-半胱胺酰胺与醛或酮或其缩醛或缩酮反应，从而得到4-烷基噻唑烷-4-羧酸或其盐和4-烷基噻唑烷-4-甲酰胺或其盐，从而有效分离并获得2-烷基-L-半胱氨酸或其盐或2-烷基-D-半胱氨酸或其盐。还提供了由2-烷基半胱氨酸或其盐制备4-烷基噻唑烷-4-羧酸或其盐的方法。

5. 发明授权

US07208631B2 2-alkylcysteinamide or salt thereof, process for producing these, and use of these 失效
标题翻译： 2-烷基半胱氨酰胺或其盐，其制备方法及其用途
公开(公告)号：US07208631B2
公开(公告)日：2007-04-24
申请号：US10552634
申请日：2004-04-07
申请人： Yasushi Higuchi , Akinori Tanaka , Ryuji Hasemi
发明人： Yasushi Higuchi , Akinori Tanaka , Ryuji Hasemi
IPC分类号： C07C233/05 , C07C231/10
CPC分类号： C07C323/60 , C07B2200/07 , C07C319/02 , C07C319/06 , C12P13/12 , C12P41/006 , Y10S435/863 , Y10S435/91
摘要： A process for producing a 2-alkylcysteinamide, which comprises hydrolysis of a 4-alkylthiazolidine-4-carboxamide represented by the general formula (2) or a salt thereof: wherein R represents a lower alkyl group having 1–4 carbon atoms; and each of R1 and R2 independently represents hydrogen or a lower alkyl group having 1–4 carbon atoms, or R1 and R2 are linked together to form an alicyclic, structure having 4–7 carbon atoms, excluding the case where both R1 and R2 are hydrogen, to give a 2-alkylcysteinamide represented by the general formula (1) or a salt thereof wherein R represents a lower alkyl group having 1–4 carbon atoms. Cells of a microorganism or treated products thereof having activity of stereoselective hydrolysis of a 2-alkyl-L-cysteinamide are allowed to act on the compound represented by the general formula (1) to yield a 2-alkyl-L-cysteine.
摘要翻译：一种制备2-烷基半胱氨酰胺的方法，其包括由通式（2）表示的4-烷基噻唑烷-4-甲酰胺或其盐的水解：其中R表示具有1-4个碳原子的低级烷基; 并且R 1和R 2各自独立地表示氢或具有1-4个碳原子的低级烷基，或R 1和R 2独立地表示氢， SUB 2连接在一起形成具有4-7个碳原子的脂环族结构，不包括R 1和R 2都是氢的情况，得到由通式（1）表示的2-烷基半胱胺酰胺或其盐，其中R表示具有1-4个碳原子的低级烷基。允许具有2-烷基-L-半胱胺酰胺立体选择性水解活性的微生物或其处理产物的细胞作用于由通式（1）表示的化合物，得到2-烷基-L-半胱氨酸。

6. 发明授权

US06967258B2 Production of quaternary ammonium salt of hydroxycarboxylic acid and quaternary ammonium salt of inorganic acid 失效
标题翻译：生产羟基羧酸季铵盐和无机酸季铵盐
公开(公告)号：US06967258B2
公开(公告)日：2005-11-22
申请号：US10840359
申请日：2004-05-07
申请人： Yutaka Kanbara , Yasushi Higuchi , Tomoo Tsujimoto , Genki Nogami
发明人： Yutaka Kanbara , Yasushi Higuchi , Tomoo Tsujimoto , Genki Nogami
IPC分类号： C07C211/63 , C07C209/20 , C07C209/00
CPC分类号： C07C209/20 , C07C211/63
摘要： A quaternary ammonium hydroxycarboxylate is produced by quaternizing a tertiary amine with a hydroxycarboxylic ester represented by the following Formula 1: wherein R1 to R3 are as defined in the disclosure. By using only one tertiary amine having at least one substituent different from R1 of the ester moiety of the hydroxycarboxylic ester and by controlling the reaction conditions, a mixture of quaternary ammonium hydroxycarboxylates having different quaternary ammonium ions is produced. By reacting an inorganic acid with the quaternary ammonium hydroxycarboxylate or its mixture, a quaternary ammonium salt of inorganic acid or its mixture is produced.
摘要翻译：季铵羟基羧酸盐是通过用下列通式1表示的羟基羧酸季铵化叔胺制备的：其中R 1至R 3如本公开所定义。通过仅使用一种具有至少一个不同于羟基羧酸酯的酯部分的R 1的取代基的叔胺并通过控制反应条件，产生具有不同季铵离子的季铵羟基羧酸盐的混合物。通过使无机酸与羟基羧酸季铵盐或其混合物反应，生成无机酸的季铵盐或其混合物。

7. 发明授权

US06337249B1 Semiconductor device and fabrication process thereof 失效
标题翻译：半导体器件及其制造工艺
公开(公告)号：US06337249B1
公开(公告)日：2002-01-08
申请号：US09715052
申请日：2000-11-20
申请人： Hiroyuki Yamane , Yasushi Higuchi , Mitsutaka Katada , Noriyuki Iwamori , Tsutomu Kawaguchi , Takeshi Kuzuhara
发明人： Hiroyuki Yamane , Yasushi Higuchi , Mitsutaka Katada , Noriyuki Iwamori , Tsutomu Kawaguchi , Takeshi Kuzuhara
IPC分类号： H01L21336
CPC分类号： H01L29/66659 , H01L27/088 , H01L27/112 , H01L29/1045 , H01L29/1083
摘要： A semiconductor device having an enhancement-type MOS structure which can prevent large leakage current is disclosed. A high-concentration region for threshold-value regulation use formed in a channel region below a gate electrode in an enhancement-type transistor is caused to be contiguous with a source region and not contiguous with a drain region. Herein, the distance between the high-concentration region and the drain region is set so as to preclude the depletion layer extending from the drain region side from reaching the high-concentration region. Therefore, the electrical field in the depletion layer does not become the critical field which causes avalanche or Zener breakdown, and so leakage current can be caused to be reduced.
摘要翻译：公开了一种能够防止大的漏电流的具有增强型MOS结构的半导体器件。导致在增强型晶体管中形成在栅电极下方的沟道区域中的阈值调节用途的高浓度区域与源极区域连续并且不与漏极区域邻接。这里，设定高浓度区域和漏极区域之间的距离，以防止从漏极区域侧延伸的耗尽层到达高浓度区域。因此，耗尽层中的电场不会成为引起雪崩或齐纳击穿的关键场，因此可以减少漏电流。

8. 发明授权

US5342802A Method of manufacturing a complementary MIS transistor 失效
标题翻译：制造互补MIS晶体管的方法
公开(公告)号：US5342802A
公开(公告)日：1994-08-30
申请号：US47543
申请日：1993-02-24
申请人： Ryoichi Kubokoya , Hiroyuki Yamane , Yasushi Higuchi
发明人： Ryoichi Kubokoya , Hiroyuki Yamane , Yasushi Higuchi
IPC分类号： H01L21/336 , H01L21/8238 , H01L27/092 , H01L29/78 , H01L21/70
CPC分类号： H01L29/66659 , H01L21/823814 , H01L27/0928 , H01L29/7835 , Y10S148/082
摘要： A high withstanding voltage MIS transistor, including an offset region and a double offset region in a region of a semiconductor substrate. The region of the semiconductor substrate has a first conductivity type. The offset region connects to a drain region, and has a second conductivity type. An impurity concentration of the offset region is lower than that of the drain region. The double offset region has the first conductivity type. At least a portion of the double offset region overlaps with the offset region. An impurity concentration of the double offset region is higher than that of the region of the semiconductor substrate. The disclosed structure has an improved current gain of the MIS transistor is improved.A method of manufacturing a CMOS having such a MIS transistor decreases the number of the manufacturing steps because the double offset region of a first conductivity type channel MIS transistor and the offset region of a second conductivity type channel MIS transistor are simultaneously formed.
摘要翻译：高耐压MIS晶体管，包括半导体衬底的区域中的偏移区域和双偏移区域。半导体衬底的区域具有第一导电类型。偏移区域连接到漏极区域，并且具有第二导电类型。偏移区域的杂质浓度低于漏极区域的杂质浓度。双偏移区具有第一导电类型。双偏移区域的至少一部分与偏移区域重叠。双偏移区域的杂质浓度高于半导体衬底区域的杂质浓度。所公开的结构具有改善的MIS晶体管的电流增益。制造具有这种MIS晶体管的CMOS的方法由于第一导电型沟道MIS晶体管的双偏移区域和第二导电型沟道MIS晶体管的偏移区域同时形成，所以减少了制造步骤的数量。

9. 发明授权

US4924277A MIS transistor device 失效
标题翻译： MIS晶体管器件
公开(公告)号：US4924277A
公开(公告)日：1990-05-08
申请号：US342608
申请日：1989-04-20
申请人： Hiroyuki Yamane , Yasushi Higuchi , Tetsuo Fujii
发明人： Hiroyuki Yamane , Yasushi Higuchi , Tetsuo Fujii
IPC分类号： H01L27/088 , H01L21/8234 , H01L27/092 , H01L29/10 , H01L29/78
CPC分类号： H01L27/0928 , H01L29/1045 , H01L29/1083 , H01L29/7836 , Y10S257/90
摘要： In a MIS transistor device, a gate electrode is formed on a first conductivity-type well region formed in a semiconductor substrate. By implanting impurities with the gate electrode and an element-isolating region made up of a field insulating film as a mask, an N-type diffusion layer having a higher impurity concentration than the first conductivity-type well region is formed on the sides of the gate electrode. A second conductivity-type diffusion layer of a first impurity concentration higher than the N-type diffusion layer is formed with a smaller width than the N-type diffusion layer in the N-type diffusion layer formed on one side of the gate electrode. A second conductivity-type diffusion layer of a second high concentration is formed with a smaller width than the N-type diffusion layer in the N-type diffusion layer formed on the other side of the gate electrode.
摘要翻译：在MIS晶体管器件中，栅电极形成在形成于半导体衬底中的第一导电型阱区上。通过将栅电极和由场绝缘膜构成的元件隔离区注入杂质作为掩模，在第二导电类型阱区的侧面上形成杂质浓度高于第一导电型阱区的N型扩散层栅电极。形成比N型扩散层高的第一杂质浓度的第二导电型扩散层的宽度小于形成在栅电极一侧的N型扩散层中的N型扩散层的宽度。形成第二高浓度的第二导电型扩散层，其宽度小于形成在栅电极另一侧的N型扩散层中的N型扩散层的宽度。

10. 发明授权

US4832810A Co-based alloy sputter target and process of manufacturing the same 失效
标题翻译： Co基合金溅射靶及其制造方法
公开(公告)号：US4832810A
公开(公告)日：1989-05-23
申请号：US70441
申请日：1987-07-07
申请人： Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada , Michio Ishikawa , Noriaki Tani , Yasushi Higuchi
发明人： Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada , Michio Ishikawa , Noriaki Tani , Yasushi Higuchi
IPC分类号： C22F1/10 , C23C14/34
CPC分类号： C23C14/3414 , C22F1/10
摘要： A Co-based alloy sputter target comprising a f.c.c. phase and a h.c.p. phase, wherein the value of th ratio of X-ray diffraction peak intensity, I.sub.fcc(200) /I.sub.hcp(101), is smaller than the value of the same ratio in a Co-based alloy obtained by cooling a Co-based alloy having a f.c.c. single phase to room temperature from the high temperature at which it is in a melted state.The target is manufactured by subjecting to cold-working treatment a Co-based alloy obtained by cooling a Co-based alloy material having a f.c.c. single phase from its melting temperature.
摘要翻译：一种Co基合金溅射靶，其包括直角相和h.c. 相，其中X射线衍射峰强度值Ifcc（200）/ Ihcp（101）的th值小于通过冷却具有第一相的Co基合金获得的Co基合金中相同比例的值，一个fcc 从处于熔融状态的高温到单相至室温。目标是通过对通过冷却具有直角角度的Co基合金材料获得的Co基合金进行冷加工处理来制造的。单相从其熔融温度。

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