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    • 5. 发明授权
    • Crystallographic metrology and process control
    • 晶体计量和过程控制
    • US07342225B2
    • 2008-03-11
    • US10505198
    • 2003-02-24
    • Erik C. HougeBrian KempshallStephen M. SchwarzFred A. Stevie
    • Erik C. HougeBrian KempshallStephen M. SchwarzFred A. Stevie
    • H01J37/28H01J37/256G01N23/00
    • H01J37/295G01N23/203Y10S117/902
    • A system (70) for crystallography including a sample holder (74), an electron source (76) for generating an electron beam, and a scanning actuator (80) for controlling the relative movement between the electron beam and the crystalline sample, the scanning actuator being controllable for directing the electron beam at a series of spaced apart points within the sample area. The system also includes an image processor (84) for generating crystallographic data based upon electron diffraction from the crystalline sample and for determining whether sufficient data have been acquired to characterize the sample area. The system further includes a controller (86) for controlling the scanning actuator to space the points apart such that acquired data is representative of a different grains within the crystalline sample. IN other embodiments, the invention includes one or more ion beams (178, 188) for crystallography and a combination ion beam/electron beam (218, 228).
    • 一种用于晶体学的系统(70),包括样品保持器(74),用于产生电子束的电子源(76)和用于控制电子束和结晶样品之间的相对运动的扫描致动器(80),扫描 致动器是可控制的,用于在样品区域内的一系列间隔开的点处引导电子束。 该系统还包括一个图像处理器(84),用于根据晶体样品的电子衍射产生晶体数据,并确定是否已获取足够的数据来表征样品区域。 所述系统还包括控制器(86),用于控制所述扫描致动器将所述点间隔开,使得所获取的数据代表所述结晶样品内的不同晶粒。 在其它实施例中,本发明包括用于晶体学的一个或多个离子束(178,188)和离子束/电子束(218,228)的组合。
    • 8. 发明授权
    • Monitoring and control of a fabrication process
    • 监控和制造过程的控制
    • US07972440B2
    • 2011-07-05
    • US10505197
    • 2003-02-24
    • Erik C. HougeJohn M. McIntoshRobert Francis Jones
    • Erik C. HougeJohn M. McIntoshRobert Francis Jones
    • C30B33/00
    • H01J37/26B24B37/044C09G1/02H01L22/12Y10T117/1004Y10T117/1008
    • A system (10) for monitoring and controlling a fabrication process includes at least a first subsystem (12), a crystallographic analysis subsystem (14), and a second subsystem (16), wherein the first subsystem and second subsystem perform respective fabrication steps on a workpiece. The crystallographic analysis subsystem may be coupled to both the first subsystem and second subsystem. The analysis subsystem acquires crystallographic information from the workpiece after the workpiece undergoes a fabrication step by the first subsystem and then provides information, based on the crystallographic information acquired, for modifying parameters associated with the respective fabrication steps. The system may also include neural networks (24, 28) to adaptively modify, based on historical process data (32), parameters provided to the respective fabrication steps. The analysis subsystem may include a electromagnetic source (61), a detector (66), a processor (67), a controller (68) and a scanning actuator (65).
    • 用于监测和控制制造过程的系统(10)至少包括第一子系统(12),结晶分析子系统(14)和第二子系统(16),其中第一子系统和第二子系统执行相应的制造步骤 工件。 晶体分析子系统可以耦合到第一子系统和第二子系统。 分析子系统在工件经过第一子系统的制造步骤之后从工件获取晶体学信息,然后基于获得的晶体学信息提供用于修改与各个制造步骤相关的参数的信息。 系统还可以包括神经网络(24,28),以根据历史过程数据(32)自适应地修改提供给各个制造步骤的参数。 分析子系统可以包括电磁源(61),检测器(66),处理器(67),控制器(68)和扫描致动器(65)。