专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06425189B1 Probe tip locator having improved marker arrangement for reduced bit encoding error 有权
标题翻译：探针尖端定位器具有改进的标记布置以减少位编码误差
公开(公告)号：US06425189B1
公开(公告)日：2002-07-30
申请号：US09552892
申请日：2000-04-20
申请人： Jeffrey B. Bindell , Erik C. Houge , Larry E. Plew , Frederick A. Stevie
发明人： Jeffrey B. Bindell , Erik C. Houge , Larry E. Plew , Frederick A. Stevie
IPC分类号： G01B900
CPC分类号： G01B11/002 , G01Q30/06 , G01Q40/02 , Y10S977/851
摘要： A probe tip locator for, and method of, use in determining a location of a probe tip relative to the probe tip locator comprising sets of discrete location markers in which numbers and positions of the location markers in each of the sets are employable uniquely to identify corresponding specific locations on the probe tip locator, the sets being distributed about the probe tip locator to avoid unbalanced partial encroachments into both sides of a scanpath of the probe tip by location markers in sets normally adjacent the scanpath thereby to prevent an erroneous determination of location caused by unbalanced partial encroachments of the location markers into both sides of the scanpath as the probe tip traverses the scanpath.
摘要翻译：用于确定探针尖端相对于探针尖端定位器的位置的探针尖端定位器，其包括一组离散位置标记，其中每个组中的位置标记的数量和位置可用于唯一地识别探针尖端定位器上的对应的特定位置，这些组围绕探针尖端定位器分布，以避免通常位于与扫描路径相邻的组中的位置标记在探针尖端的扫描路径的两侧不平衡的部分侵入，从而防止位置的错误确定由于探针尖端穿过扫描路径，位置标记不均匀部分侵入扫描路径的两侧。

2. 发明授权

US06250143B1 Method of mapping a surface using a probe for stylus nanoprofilometry having a non-circular cross-section 有权
标题翻译：使用具有非圆形横截面的触笔纳米流变测定法的探针绘制表面的方法
公开(公告)号：US06250143B1
公开(公告)日：2001-06-26
申请号：US09386711
申请日：1999-08-31
申请人： Jeffrey B. Bindell , Erik C. Houge , Larry E. Plew , Terri L. Shofner , Frederick A. Stevie
发明人： Jeffrey B. Bindell , Erik C. Houge , Larry E. Plew , Terri L. Shofner , Frederick A. Stevie
IPC分类号： G01H2300
CPC分类号： G01Q60/38 , G01Q70/10 , H01L22/12 , Y10S977/878
摘要： The present invention provides an apparatus and a method of manufacturing that apparatus. More specifically, to a method of manufacturing probes for a stylus nanoprofilometer having a non-circular probe tip geometry and a method of measurement of semiconductor wafer features using the same. In one embodiment, the probe comprises an upper portion couplable to the stylus nanoprofilometer and a probative portion coupled to the upper portion. The probative portion has a cross section that is substantially thinner than a cross section of the upper portion. The probative portion further has a terminus distal the upper portion and a reentrant angle from the terminus to the upper portion.
摘要翻译：本发明提供一种制造该装置的装置和方法。更具体地，涉及一种制造具有非圆形探针尖端几何形状的触针式纳米探针计探针的探针的方法和使用其的半导体晶片特征的测量方法。在一个实施例中，探针包括可与触针纳米玻璃体计量器耦合的上部和耦合到上部的识别部分。证明部分具有比上部的横截面更薄的横截面。证明部分还具有远离上部的终端和从终端到上部的折返角。

3. 发明授权

US06362475B1 Scanning electron microscope/energy dispersive spectroscopy sample preparation method and sample produced thereby 有权
标题翻译：扫描电子显微镜/能量色散光谱样品制备方法和由此制备的样品
公开(公告)号：US06362475B1
公开(公告)日：2002-03-26
申请号：US09337966
申请日：1999-06-22
申请人： Jeffrey B. Bindell , Frederick A. Stevie , Catherine Vartuli
发明人： Jeffrey B. Bindell , Frederick A. Stevie , Catherine Vartuli
IPC分类号： G01N128
CPC分类号： G01N1/32 , H01J2237/2561
摘要： A method of preparing a monolithic structure for scanning electron microscope/energy dispersive spectroscopy (SEM/EDS) and a sample produced by way of the method. In one embodiment, the method includes: (1) aiming a focused ion beam at a location behind or beneath an area of interest in the monolithic structure and (2) employing the focused ion beam to remove at least a portion of an interaction volume of material beneath the area of interest. The area of interest preferably remains substantially intact for the spectroscopy.
摘要翻译：制备用于扫描电子显微镜/能量色散光谱（SEM / EDS）的整体结构的方法和通过该方法制备的样品。在一个实施例中，该方法包括：（1）将焦点离子束瞄准单片结构中感兴趣区域的后面或下方的位置，和（2）使用聚焦离子束去除至少一部分相互作用体积材料在感兴趣的区域之下。感兴趣的区域优选保持基本上完整的光谱。

4. 发明授权

US06297503B1 Method of detecting semiconductor defects 失效
标题翻译：检测半导体缺陷的方法
公开(公告)号：US06297503B1
公开(公告)日：2001-10-02
申请号：US09328560
申请日：1999-06-09
申请人： Jeffrey B. Bindell , Frederick A. Stevie
发明人： Jeffrey B. Bindell , Frederick A. Stevie
IPC分类号： H01L2144
CPC分类号： H01J37/3056 , G01N1/32 , G01R31/303 , H01J2237/2817
摘要： A method of detecting defects within a semiconductor device is disclosed. An ion beam is focused in predetermined directions onto an area of a semiconductor device that is believed to have a suspected defect. A portion of the semiconductor device is milled and forms a thin film specimen to be removed from the semiconductor device. The thin film specimen is removed from the semiconductor device and placed onto an insulated film mount. Electrical connection points are created on previously unexposed portions of the thin film specimen by depositing a line of conductive material using a focused ion beam. The surface of the thin film specimen is scanned with an electron beam in a scanning electron microscope and observed for contrast. Processing errors are determined and the lateral resolution is about the electron beam size.
摘要翻译：公开了一种在半导体器件内检测缺陷的方法。将离子束以预定的方向聚焦到被认为具有疑似缺陷的半导体器件的区域上。半导体器件的一部分被研磨并形成要从半导体器件移除的薄膜样本。将薄膜样品从半导体器件中取出并放置在绝缘膜安装座上。通过使用聚焦离子束沉积导电材料线，在薄膜试样的先前未曝光部分上产生电连接点。在扫描电子显微镜中用电子束扫描薄膜样品的表面并观察其对比度。确定处理误差，横向分辨率约为电子束大小。

5. 发明授权

US06603119B1 Calibration method for quantitative elemental analysis 有权
标题翻译：定量元素分析校正方法
公开(公告)号：US06603119B1
公开(公告)日：2003-08-05
申请号：US09567675
申请日：2000-05-09
申请人： Lucille A. Giannuzzi , Frederick A. Stevie , Catherine Vartuli
发明人： Lucille A. Giannuzzi , Frederick A. Stevie , Catherine Vartuli
IPC分类号： H01J4926
CPC分类号： G01N23/2255
摘要： The present invention provides a method of calibrating an analytical tool. The method, in a illustrative embodiment, includes preparing a calibration standard having a known concentration of an element and obtaining a portion of the calibration standard with a focused beam, wherein the calibration standard is representative of the concentration. The portion of the calibration standard is then used to calibrate an analytical tool.
摘要翻译：本发明提供一种校准分析工具的方法。在说明性实施例中，该方法包括制备具有已知浓度的元件并且用聚焦光束获得校准标准的一部分的校准标准，其中校准标准代表浓度。然后将校准标准品的一部分用于校准分析工具。

6. 发明授权

US06519542B1 Method of testing an unknown sample with an analytical tool 有权
标题翻译：用分析工具测试未知样品的方法
公开(公告)号：US06519542B1
公开(公告)日：2003-02-11
申请号：US09567373
申请日：2000-05-09
申请人： Lucille A. Giannuzzi , Frederick A. Stevie , Cathrine Vartuli
发明人： Lucille A. Giannuzzi , Frederick A. Stevie , Cathrine Vartuli
IPC分类号： G06F1900
CPC分类号： H01J49/0027 , G01N23/2251 , G01N2001/2893 , H01J49/0009
摘要： The present invention provides a method of testing an unknown sample with an analytical tool The method may include calibrating an analytical tool to a calibration standard having a known concentration of an element therein and obtained with a focused beam, thereby to achieve a calibrated analytical tool, determining an unknown concentration of the element within the unknown sample with the calibrated analytical tool, and correcting the unknown concentration with the calibration standard.
摘要翻译：本发明提供了一种使用分析工具测试未知样品的方法。该方法可以包括将分析工具校准为具有已知浓度的元件的校准标准并且由聚焦光束获得，从而实现校准分析工具，使用校准的分析工具确定未知样品中未知浓度的元素，并用校准标准校正未知浓度。

7. 发明授权

US06229141B1 Analysis of alkali elements in insulators using secondary ion mass spectrometry 失效
标题翻译：使用二次离子质谱法分析绝缘子中的碱元素
公开(公告)号：US06229141B1
公开(公告)日：2001-05-08
申请号：US09138740
申请日：1998-08-24
申请人： Frederick A. Stevie , Jennifer M. McKinley
发明人： Frederick A. Stevie , Jennifer M. McKinley
IPC分类号： G01N23225
CPC分类号： G01N23/225
摘要： A method for utilizing secondary ion mass spectrometry (SIMS) analysis allows for the accurate determination of alkali elements in insulator materials by controlling the penetration depth of an electron beam used for charge neutralization so as to minimize the movement of alkali elements in the insulator. The method can be employed in connection with both magnetic sector SIMS instruments and quadrupole SIMS instruments.
摘要翻译：利用二次离子质谱法（SIMS）分析方法，可以通过控制用于电荷中和的电子束的穿透深度来精确测定绝缘体材料中的碱元素，从而使绝缘体中碱元素的运动最小化。该方法可以与磁性扇区SIMS仪器和四极SIMS仪器结合使用。

8. 发明授权

US06519543B1 Calibration method for quantitative elemental analysis 有权
标题翻译：定量元素分析校正方法
公开(公告)号：US06519543B1
公开(公告)日：2003-02-11
申请号：US09567359
申请日：2000-05-09
申请人： Lucille A. Giannuzzi , Frederick A. Stevie , Catherine Vartuli
发明人： Lucille A. Giannuzzi , Frederick A. Stevie , Catherine Vartuli
IPC分类号： H01L2144
CPC分类号： H01L22/34 , G01N1/32 , G01N23/2202 , G01N2001/2893
摘要： The present invention provides a method of calibrating an analytical tool. The method, in a illustrative embodiment, includes determining a concentration of an element located within a known matrix, obtaining a calibration standard of the known matrix with a polishing process, the calibration standard being representative of the concentration, and obtaining a detection limit of an analytical tool with respect to the concentration. Furthermore, secondary ion mass spectrometry may be used to determine the concentration of the element within the known matrix.
摘要翻译：本发明提供一种校准分析工具的方法。在说明性实施例中，该方法包括确定位于已知矩阵内的元素的浓度，通过抛光处理获得已知矩阵的校准标准，校准标准代表浓度，并获得检测限分析工具相对于浓度。此外，可以使用二次离子质谱法来确定已知基质中元素的浓度。

9. 发明授权

US6121624A Method for controlled implantation of elements into the surface or near surface of a substrate 有权
标题翻译：将元件受控地植入到衬底的表面或近表面中的方法
公开(公告)号：US6121624A
公开(公告)日：2000-09-19
申请号：US138741
申请日：1998-08-24
申请人： Frederick A. Stevie , Ronald F. Roberts , Mark A. Decker
发明人： Frederick A. Stevie , Ronald F. Roberts , Mark A. Decker
IPC分类号： G01Q70/14 , H01L21/265 , H01L21/66 , H01J49/04
CPC分类号： H01L21/2652
摘要： A method for introducing a known concentration of at least one species of ions into the surface or near surface of a substrate can be employed as a calibration technique prior to subsequent surface or near surface measurement. The method involves the introduction of a removable layer onto the surface followed by ion implantation which is performed to provide a known concentration of implanted ion at the interface between the removable layer and the surface. Subsequent to removal of the removable layer, the surface can be subjected to determination of elemental concentrations at the surface or near surface levels by techniques such as total reflection x-ray fluorescence or secondary ion mass spectrometry.
摘要翻译：可以在随后的表面或近表面测量之前，将用于将已知浓度的至少一种离子引入衬底的表面或近表面的方法用作校准技术。该方法包括将可移除层引入到表面上，随后进行离子注入，以在可移除层和表面之间的界面处提供已知浓度的注入离子。在去除可去除层之后，可以通过诸如全反射x射线荧光或二次离子质谱法的技术来测量表面或近表面水平的元素浓度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式