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1. 发明专利

JP2012174878A Semiconductor device and apparatus using the same 审中-公开
标题翻译：半导体器件和使用它的设备
公开(公告)号：JP2012174878A
公开(公告)日：2012-09-10
申请号：JP2011035304
申请日：2011-02-22
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TERAKAWA TAKESHI , MATSUYOSHI SATOSHI , NARITA KAZUTOYO , MORI MUTSUHIRO
IPC分类号： H01L29/868 , H01L21/822 , H01L27/04 , H01L29/06 , H01L29/47 , H01L29/861 , H01L29/872 , H02K11/00
CPC分类号： H01L29/872 , H01L24/01 , H01L29/0619 , H01L29/8611 , H01L2924/12036 , H01L2924/181 , H01L2924/351 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that can improve the reliability, and to provide a rotating electrical machine or a vehicle using the semiconductor device.SOLUTION: A semiconductor device has a Schottky junction and a pn junction. The pn junction is formed by a high-concentration P-type diffusion layer 5 and an N-type diffusion layer 4. The Schottky junction is formed by a low-concentration P-type diffusion layer 6 and a metal electrode 7. The breakdown voltage of the pn junction in a rectifying region is lower than that of the Schottky junction and the pn junction in a guard ring portion Z2.
摘要翻译：要解决的问题：提供可以提高可靠性的半导体器件，以及提供使用该半导体器件的旋转电机或车辆。解决方案：半导体器件具有肖特基结和pn结。 pn结由高浓度P型扩散层5和N型扩散层4形成。肖特基结由低浓度P型扩散层6和金属电极7形成。击穿电压在整流区域中的pn结的位置比保护环部分Z2中的肖特基结和pn结的低。版权所有（C）2012，JPO＆INPIT

2. 发明专利

DE4300574A1 Rectifier circuit for vehicle ac generator - has mesa isolated Zener diode rectifiers mounted inside generator on heat sinks cooled with fan 未知
公开(公告)号：DE4300574A1
公开(公告)日：1993-07-15
申请号：DE4300574
申请日：1993-01-12
申请人： HITACHI LTD
发明人： SAITO AKIHIRO , MASHINO KEIICHI , HONDA YOSHIAKI , MAEDA YUUJI , NARITA KAZUTOYO
IPC分类号： H02K11/02 , H01L25/11 , H02J7/24 , H02K11/04 , H02K19/28 , H02K19/36 , H02P9/30
摘要： The rectifier circuit includes an ac generator whose Y-shaped windings (11u, 11v, 11w) are connected to the rectifiers (12, 13...19) which are mounted inside generator on a heat sink and cooled with a fan. The rectifiers are Zener diodes produced by doping of p-type silicon substrates, and isolated by mesa-etching. A power transistor (21) feeds the excitation winding of the generator. A diode (24) is used as a snubber. Another power transistor (22) is connected to the battery (5) through a working lamp (3) and the ignition switch (4). A control circuit (23) drives the power transistors. The loads (6, 6') are connected to the rectifier circuit through the switches (7, 7'). ADVANTAGE - Reliable operation of electronic components in high temperature environment, reduced loading of battery due to low voltage current of diodes, low electromagnetic noise radiation.

3. 发明专利

DE69120366T2 未知
公开(公告)号：DE69120366T2
公开(公告)日：1996-11-07
申请号：DE69120366
申请日：1991-10-08
申请人： HITACHI LTD , SHINETSU CHEMICAL CO , NIPPON DENSO CO
发明人： NARITA KAZUTOYO , NAKAJIMA YOICHI , OKINOSHIMA HIROSHIGE , NOSAKA TADASHI
IPC分类号： H01L25/07 , H01L23/24 , H01L23/29 , H01L23/31 , H01L25/11 , H02K11/04
摘要： A semiconductor rectifying device, suitable for installation in vehicles, comprises a cup-shaped metallic container(1), a semiconductor chip(2) having a pn junction, one of whose main surfaces is bonded to the bottom surface of the container(1), a lead(4) bonded to the other main surface of the semiconductor chip(2), and a silicone resin layer(6) containing silica powder, with which layer an exposed portion of the semiconductor chip(2) is covered.

4. 发明专利

DE4300574C2 未知
公开(公告)号：DE4300574C2
公开(公告)日：1997-04-03
申请号：DE4300574
申请日：1993-01-12
申请人： HITACHI LTD
发明人： SAITO AKIHIRO , MASHINO KEIICHI , HONDA YOSHIAKI , MAEDA YUUJI , NARITA KAZUTOYO
IPC分类号： H02K11/02 , H01L25/11 , H02J7/24 , H02K11/04 , H02K19/28 , H02K19/36 , H02P9/30 , H02P9/48 , H01L23/28 , H01L23/36 , H01L29/866
摘要： A vehicle alternator output rectifier instrument in which mesa structure Zener diodes, formed by diffusion of impurity on a P-type silicon substrate, are used as rectifier elements which are used in rectifier circuits for rectifying an alternate current output of a vehicle alternator. Since the vehicle alternator output rectifier instrument employs the above Zener diodes, this rectifier instrument can endure high temperature circumstances, considerably reduce a reverse leakage current to thereby prevent a battery voltage from being discharged and reduce a radio noise to thereby reduce a bad influence exerted upon an electronic device serving as a load.

5. 发明专利

DE69120366D1 未知
公开(公告)号：DE69120366D1
公开(公告)日：1996-07-25
申请号：DE69120366
申请日：1991-10-08
申请人： HITACHI LTD , SHINETSU CHEMICAL CO , NIPPON DENSO CO
发明人： NARITA KAZUTOYO , NAKAJIMA YOICHI , OKINOSHIMA HIROSHIGE , NOSAKA TADASHI
IPC分类号： H01L25/07 , H01L23/24 , H01L23/29 , H01L23/31 , H01L25/11 , H02K11/04
摘要： A semiconductor rectifying device, suitable for installation in vehicles, comprises a cup-shaped metallic container(1), a semiconductor chip(2) having a pn junction, one of whose main surfaces is bonded to the bottom surface of the container(1), a lead(4) bonded to the other main surface of the semiconductor chip(2), and a silicone resin layer(6) containing silica powder, with which layer an exposed portion of the semiconductor chip(2) is covered.

6. 发明专利

DE2632154A1 未知
公开(公告)号：DE2632154A1
公开(公告)日：1977-02-10
申请号：DE2632154
申请日：1976-07-16
申请人： HITACHI LTD
发明人： NARITA KAZUTOYO , SAKAUE TADASHI , NIINO YUZI
IPC分类号： H01L23/049 , H01L23/373 , H01L23/433 , H01L25/11 , H01L23/36
摘要： A semiconductor device has a composite metal heat-radiating plate consisting of, for example, two copper layers for serving as a thermally and electrically conducting medium and an iron layer for giving mechanical strength, interposed between the copper layers, in which the semiconductor element is directly or indirectly, electrically and mechanically coupled by soldering to one of the copper layers.

7. 发明专利

DE2824607A1 未知
公开(公告)号：DE2824607A1
公开(公告)日：1978-12-14
申请号：DE2824607
申请日：1978-06-05
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： NARITA KAZUTOYO , SAKAUE TADASHI , KAWASAKI NOBORU , NAKAJIMA MOTOJI
IPC分类号： H01L23/433 , H01L23/49 , H01L25/07 , H01L23/48 , H01L25/04

8. 发明专利

JPH10294319A HIGH BREAKDOWN STRENGTH DIODE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH10294319A
公开(公告)日：1998-11-04
申请号：JP10004497
申请日：1997-04-17
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： MURAKAMI SUSUMU , TSURUOKA MASAO , NARITA KAZUTOYO , TAKAHASHI KIKUO
IPC分类号： H01L21/329
摘要： PROBLEM TO BE SOLVED: To prevent lowering of breakdown strength or increase of leakage current due to charging of a passivation film caused by ions in a mold resin by forming at least one layer of undercoat resin containing an ion exchange resin or a chelate resin. SOLUTION: A first undercoat resin 4 is formed of polyimide silicon while covering a semiconductor and a second undercoat resin 5 containing an ion exchange resin or a chelate resin is formed while covering a part of the first undercoat resin 4, an anode electrode 22 and a cathode electrode 23. Essential conductivity type and conductivity can be sustained on the surface of the semiconductor by taking anions of Cl, or the like, or cations of Na, or the like, having adverse effect on the surface of the semiconductor into the second undercoat resin 5. Since the pn bond is biased reversely and a depletion layer is spread normally to the opposite sides of the pn bond, lowering of breakdown strength or increase of leakage current can be prevented.

9. 发明专利

JPH09139462A SEMICONDUCTOR DEVICE AND FULL-WAVE RECTIFIER USING THE DEVICE 失效
公开(公告)号：JPH09139462A
公开(公告)日：1997-05-27
申请号：JP29402895
申请日：1995-11-13
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： SHIKURA TOSHIO , MIURA MASATAMI , NARITA KAZUTOYO
IPC分类号： H01L25/07
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device whose lifespan because of thermal fatigue is increased. SOLUTION: A semiconductor device is comprised of a metallic case 1, a semiconductor chip 2 bonded to the bottom of the metallic case 1 through a bonding layer 3, a header 4a which is molded in one piece with a lead 4 and is bonded to the semiconductor chip 2 through the bonding layer 5, and a protective layer 7 covering the exposed surface of the semiconductor chip 2 and the lead 4. The semiconductor device is bonded to the outer end of the header 4a by the bonding layer 5 and is provided with a stress reducing member 6 which reduces the thermal stress applied to the bonding layer 5 between the semiconductor chip 2 and the header 4a.

10. 发明专利

JPH08205498A FULL-WAVE RECTIFYING APPARATUS 失效
公开(公告)号：JPH08205498A
公开(公告)日：1996-08-09
申请号：JP791195
申请日：1995-01-23
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： MIURA MASATAMI , NARITA KAZUTOYO , SUDO KATSUHIKO
IPC分类号： H01L25/00 , H02K19/36
摘要： PURPOSE: To reduce the number of semiconductor elements and eliminate a plurality of heat sinks and insulators for insulating these heat sinks by attaching, within a metal housing, three semiconductor elements mounting a pair of semiconductor chips in direct or through a heat sink. CONSTITUTION: The N layer side of a semiconductor chip 3a and an external lead 4 which becomes a positive DC terminal are connector with soldering and the P layer side of a semiconductor chip 3b and an internal lead 5 for connecting the bottom surface of a metal housing 1 are connected with soldering, and the metal housing 1 is filled with silicone resin 7 to form a pair of semiconductor elements. The metal housing 1 of three semiconductor elements is inserted with pressure into an aluminum bracket 8 of the AC generator and a terminal board fixing the positive DC terminal and AC terminal with epoxy resin is mounted. Thereby, a full-wave rectifying apparatus is formed. Since the semiconductor element is inserted with pressure directly into the bracket, the number of full-wave rectifying apparatuses can be reduced and heat radiation property to the bracket 8 from the semiconductor element can be improved.

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