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1. 发明专利

JP2008147469A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2008147469A
公开(公告)日：2008-06-26
申请号：JP2006333941
申请日：2006-12-12
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HIRAMITSU SHINJI , SASAKI KOJI , NAKAMURA MASATO , IKEDA YASUSHI , MATSUYOSHI SATOSHI , KAJIWARA RYOICHI
IPC分类号： H01L23/48
CPC分类号： H01L24/33 , H01L24/01 , H01L2924/10253 , H01L2924/351 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which uses a lead-free material as a joining material, assures sufficient performance, connection strength and resistance to thermal fatigue under a high temperature environment during use, and does not have a Si chip damaged by thermal stress.
SOLUTION: Ag nano paste which is slightly poor in resistance to thermal fatigue but is excellent in heat resistance is employed as joining materials 4 and 5 for joining the Si chip 1 and buffer plates 2 and 3. Sn-Cu-based solder which is slightly poor in the heat resistance but excellent in the resistance to thermal fatigue is employed as joining materials 8 and 9 for joining the buffer plates 2 and 3 and the electrodes 6 and 7. Use of the materials suitable for the place of the joining materials can assure the sufficient performance, connection strength and resistance to thermal fatigue and also achieve a lead-free semiconductor device which does not have the Si chip damaged by thermal stress.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供使用无铅材料作为接合材料的半导体器件，在使用期间在高温环境下确保足够的性能，连接强度和耐热疲劳性，并且不具有Si 芯片受热应力损坏。作为用于接合Si芯片1和缓冲板2和3的接合材料4和5，采用耐热疲劳性差但耐热性优异的Ag纳米糊剂。作为接合材料4和5，使用Sn-Cu系焊料采用耐热性略差，耐热疲劳性优良的接合材料8,9用于连接缓冲板2和3以及电极6和7.适用于接合位置的材料的使用材料可以确保足够的性能，连接强度和耐热疲劳性能，并且还实现不具有Si芯片受热应力损坏的无铅半导体器件。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2006269848A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2006269848A
公开(公告)日：2006-10-05
申请号：JP2005087481
申请日：2005-03-25
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SASAKI KOJI , HIRAMITSU SHINJI , KARIYA TADAAKI , MATSUYOSHI SATOSHI , KAJIWARA RYOICHI , ISHIHARA SHOSAKU
IPC分类号： H01L23/48
CPC分类号： H01L23/488 , H01L23/051 , H01L23/24 , H01L24/32 , H01L24/33 , H01L2224/291 , H01L2224/29111 , H01L2924/01006 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01082 , H01L2924/0132 , H01L2924/10253 , H01L2924/181 , H01L2924/351 , H01L2924/01026 , H01L2924/01028 , H01L2924/01083 , H01L2924/3512 , H01L2924/00 , H01L2924/00015 , H01L2924/014 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which is capable of preventing an Si chip from being broken due to thermal stress when used, and uses Pb-free solder having a melting point of ≥250°C. SOLUTION: Stress buffer plates 2a, 2b having a linear expansion coefficient of 3×10-6/°C to 8×10-6/°C are bonded on the upper/lower faces of the Si chip 1 via Pb-free solder having a thickness of ≤0.05 mm and a melting point of ≥250°C. The upper/lower faces of the stress buffer plates 2a, 2b are bonded to a lead 5 and a base 6 via Pb-free solder having a thickness of ≥0.15 mm and a melting point of ≥250°C. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够防止Si芯片在使用时由于热应力而被破坏的半导体器件，并且使用熔点≥250℃的无铅焊料。解决方案：线性膨胀系数为3×10-6 /℃至8×10-6 /℃的应力缓冲板2a，2b通过Pb-Si键合在Si芯片1的上/下表面上，厚度≤0.05mm，熔点≥250℃的无铅焊料。应力缓冲板2a，2b的上下面通过厚度≥0.15mm，熔点≥250℃的无铅焊料与引线5和基底6接合。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2005184976A Vehicle-mounted alternator 审中-公开
标题翻译：车辆安装备注
公开(公告)号：JP2005184976A
公开(公告)日：2005-07-07
申请号：JP2003421960
申请日：2003-12-19
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ISHIHARA SHOSAKU , TSUCHIDA SEIICHI , SERIZAWA KOJI , KARIYA TADAAKI , MATSUYOSHI SATOSHI
IPC分类号： H02K19/22 , H02K19/36
摘要： PROBLEM TO BE SOLVED: To provide a vehicle-mounted alternator, which has adopted a semiconductor device using solder material which is small in environmental load and is low in cost and superior in heat resistance and the like, for a semiconductor device.
SOLUTION: In the vehicle-mounted alternator which is equipped with a rectifying means for converting AC induced in the winding of a armature rotated by the rotating driving force of an engine into DC, the rectifying means has a semiconductor element, where nickel films (Ni) are formed on both sides. For this semiconductor element, its one side is jointed to a metallic member by a first jointing member which has zinc (Zn) for its main component, and its other side is jointed with a lead electrode by a second jointing member which has zinc (Zn) for its main component. The first jointing member is so constituted as to be lower in fusing point than that of the second jointing member.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种车载交流发电机，其采用了半导体装置使用环境负荷小，成本低，耐热性等优异的焊料的半导体装置。解决方案：在具有用于将由发动机的旋转驱动力旋转的电枢的绕组中感应的AC转换为DC的车载交流发电机中，整流装置具有半导体元件，其中镍两面形成膜（Ni）。对于该半导体元件，其一面通过以主要成分为锌（Zn）的第一接合构件与金属构件接合，另一侧通过具有锌（Zn）的第二接合构件与引线电极接合）为主要组成部分。第一接合构件的定影点比第二接合构件低。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2005166962A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2005166962A
公开(公告)日：2005-06-23
申请号：JP2003403926
申请日：2003-12-03
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NAKAJIMA TSUTOMU , MATSUYOSHI SATOSHI
IPC分类号： H01L23/34
CPC分类号： H01L24/01 , H01L2924/14 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device in which compression stress to be applied to a semiconductor chip during press fitting is reduced. SOLUTION: In the semiconductor device, the semiconductor chip is joined and supported in the recessed part of a supporting electrode body by junction members through a thermal expansion easing electrode body, the supporting electrode body has a bottom and side faces which are axially symmetrical about a center axis passing the center of the bottom, and grooves are formed so as to surround the side faces of the supporting electrode body, so that compression stress to be applied to the semiconductor chip during press fitting is reduced and the characteristic reduction of the semiconductor chip is evaded. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种半导体器件，其中压配合期间施加到半导体芯片的压缩应力减小。解决方案：在半导体器件中，半导体芯片通过接合部件通过热膨胀缓和电极体接合并支撑在支撑电极体的凹部中，支撑电极体具有底部和侧面，轴向对应于通过底部中心的中心轴线，并且形成围绕支撑电极体的侧面的凹槽，从而减小了在加压配合期间施加到半导体芯片的压缩应力，并且特性减小半导体芯片被回避。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2004289028A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2004289028A
公开(公告)日：2004-10-14
申请号：JP2003081710
申请日：2003-03-25
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YAMAZAKI BISHIYUKU , MATSUYOSHI SATOSHI , NAKAJIMA TSUTOMU , FUKUI SHOICHI
IPC分类号： H01L23/40 , H01L21/52 , H01L23/48
CPC分类号： H01L24/01 , H01L24/33 , H01L2924/181 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device by effectively preventing the development of cracking. SOLUTION: The semiconductor device has a lead electrode communicating to leads, a case electrode having a protruded wall part on a circumferential part, a metal plate located through a junction member between the case electrode and a semiconductor chip having a rectifying function and disposed via the lead electrode and the junction member, and a first region thicker than an end part of a lead electrode surface joined with the semiconductor chip via the junction member. The case electrode includes a second region of a region in which the metal plate is disposed, and a third region thinner than the second region, and forms a fourth region of a central part thinner than the metal plate end part such that a protrusion of the second region and a lower surface of the metal plate satisfy a recessed relation. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过有效地防止开裂的发展来提供高可靠性的半导体器件。解决方案：半导体器件具有与引线连通的引线电极，具有在周向部分上具有突出壁部分的壳体电极，位于壳体电极和具有整流功能的半导体芯片之间的接合部件的金属板，以及通过引线电极和接合部件设置，以及比通过接合部件与半导体芯片接合的引线电极表面的端部厚的第一区域。壳体电极包括设置有金属板的区域的第二区域和比第二区域薄的第三区域，并且形成比金属板端部部分更薄的中心部分的第四区域，使得第二区域和金属板的下表面满足凹陷关系。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2004214517A Semiconductor device 审中-公开
公开(公告)号：JP2004214517A
公开(公告)日：2004-07-29
申请号：JP2003001687
申请日：2003-01-08
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YAMAZAKI BISHIYUKU , MATSUYOSHI SATOSHI , NAKAJIMA TSUTOMU
IPC分类号： H01L23/34 , H01L23/24 , H01L23/48 , H01L23/492
CPC分类号： H01L24/01 , H01L23/24 , H01L23/492 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/0104 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01082
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve the thermal fatigue lifetime by reducing the distortion of a connecting member caused by mutual thermal deformation difference between a lead electrode and a semiconductor chip both of which are electrically connected by the connecting member, and can improve power feeding capacity and heat radiating performance of the semiconductor chip. SOLUTION: The semiconductor device includes a semiconductor chip mounted on the inner upper surface of a case electrode by a connection member, a lead mounted on the upper surface of the semiconductor chip by the connecting member, and an insulating member filled in a space of the case electrode for sealing a connected part. By forming a groove in the upper surface of the lead electrode, large thermal distortion occurring at the end of the connecting member caused by the difference in coefficients of linear expansion between the lead electrode and semiconductor chip can be reduced, and the thermal fatigue lifetime can be improved. Also variation in the thickness of the connecting member can be reduced. COPYRIGHT: (C)2004,JPO&NCIPI

7. 发明专利

JP2012174878A Semiconductor device and apparatus using the same 审中-公开
标题翻译：半导体器件和使用它的设备
公开(公告)号：JP2012174878A
公开(公告)日：2012-09-10
申请号：JP2011035304
申请日：2011-02-22
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TERAKAWA TAKESHI , MATSUYOSHI SATOSHI , NARITA KAZUTOYO , MORI MUTSUHIRO
IPC分类号： H01L29/868 , H01L21/822 , H01L27/04 , H01L29/06 , H01L29/47 , H01L29/861 , H01L29/872 , H02K11/00
CPC分类号： H01L29/872 , H01L24/01 , H01L29/0619 , H01L29/8611 , H01L2924/12036 , H01L2924/181 , H01L2924/351 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that can improve the reliability, and to provide a rotating electrical machine or a vehicle using the semiconductor device.SOLUTION: A semiconductor device has a Schottky junction and a pn junction. The pn junction is formed by a high-concentration P-type diffusion layer 5 and an N-type diffusion layer 4. The Schottky junction is formed by a low-concentration P-type diffusion layer 6 and a metal electrode 7. The breakdown voltage of the pn junction in a rectifying region is lower than that of the Schottky junction and the pn junction in a guard ring portion Z2.
摘要翻译：要解决的问题：提供可以提高可靠性的半导体器件，以及提供使用该半导体器件的旋转电机或车辆。解决方案：半导体器件具有肖特基结和pn结。 pn结由高浓度P型扩散层5和N型扩散层4形成。肖特基结由低浓度P型扩散层6和金属电极7形成。击穿电压在整流区域中的pn结的位置比保护环部分Z2中的肖特基结和pn结的低。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2010073908A Semiconductor apparatus and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：JP2010073908A
公开(公告)日：2010-04-02
申请号：JP2008240194
申请日：2008-09-19
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： IKEDA YASUSHI , MATSUYOSHI SATOSHI , HIRAMITSU SHINJI
IPC分类号： H01L21/52 , H01L23/48
CPC分类号： H01L24/32 , H01L2224/83101 , H01L2924/01029 , H01L2924/01322 , H01L2924/01327 , H01L2924/13055 , H01L2924/13091 , H01L2924/351 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor apparatus capable of preventing deterioration of wettability of Al, increase of cost in using an antioxidant material for suppressing the deterioration of wettability, increase of processes for material production, and damage of a semiconductor element caused by thermal stress at cooling after connection or at temperature cycle when a Zn-Al alloy solder is used, and to provide a method of manufacturing the same. SOLUTION: The semiconductor apparatus is configured by a semiconductor element 4, a connected member 5, and a first connection layer that connects the semiconductor element with the connected member. The first connection layer has a configuration in which Zn-Al alloy layers 31a and 31b are provided on both sides of an Al layer 1. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种能够防止Al的润湿性劣化的半导体装置，增加使用抗氧化剂材料抑制润湿性劣化的成本，增加材料制造工艺和半导体元件的损坏在使用Zn-Al合金焊料时在连接后或在温度循环下的冷却时的热应力引起的，并提供其制造方法。解决方案：半导体装置由半导体元件4，连接构件5和连接半导体元件与连接构件的第一连接层构成。第一连接层具有在Al层1的两侧设置Zn-Al合金层31a和31b的构造。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2010056259A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2010056259A
公开(公告)日：2010-03-11
申请号：JP2008218978
申请日：2008-08-28
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HIRAMITSU SHINJI , OTA HIROYUKI , SASAKI KOJI , KITANO MAKOTO , MATSUYOSHI SATOSHI
IPC分类号： H01L23/48
CPC分类号： H01L24/01 , H01L2924/351 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having high reliability and ability to correspond to the large electric power by making high stress relaxing performance compatible with heat radiating performance. SOLUTION: A semiconductor chip 10, a pair of electrode parts 12a, 21c facing each other with the semiconductor chip 10 held between them, and bonding layers 13, 14 to electrically bond them are laminated to form this semiconductor device. Electrode part restricting member 25 to suppress thermal expansion of the electrode parts 12a, 21c in the diameter direction is formed with the member abutting on the outer periphery of at least one electrode part of the pair of electrode parts 12a, 21c, the electrode part restricting member 25 is bonded to the semiconductor chip 10 through the bonding layer 13, the electrode part 21c where the electrode part restricting member 25 is formed has a protrusion, and the bonding surface of the protrusion which faces the semiconductor chip 10 protrudes further toward the semiconductor chip side than the bonding surface of the electrode part restricting member 25 which faces the semiconductor chip 10. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过提供与散热性能兼容的高应力松弛性能来提供具有高可靠性和对应于大功率的能力的半导体器件。解决方案：半导体芯片10，一对彼此面对的电极部分12a，21c，半导体芯片10保持在它们之间，并且将它们电连接的接合层13,14层压以形成该半导体器件。电极部限制部件25为了抑制电极部12a，21c在直径方向的热膨胀而形成有与该对电极部12a，21c的至少一个电极部的外周抵接的部件，构件25通过接合层13接合到半导体芯片10，形成有电极部限制构件25的电极部分21c具有突起，并且与半导体芯片10相对的突起的接合表面进一步朝向半导体芯片侧比面向半导体芯片10的电极部件限制件25的接合表面。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2005183650A Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2005183650A
公开(公告)日：2005-07-07
申请号：JP2003421958
申请日：2003-12-19
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ISHIHARA SHOSAKU , TSUCHIDA SEIICHI , SERIZAWA KOJI , KARIYA TADAAKI , MATSUYOSHI SATOSHI
IPC分类号： H01L21/52
CPC分类号： H01L24/01 , H01L2224/32245 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/01322 , H01L2924/01327 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a joint material for semiconductor device that is low in environmental load, inexpensive and superior in heat resistance, and to provide a semiconductor device using it, and its manufacturing method. SOLUTION: The semiconductor device has a structure wherein a semiconductor element and a copper member are joined. The semiconductor element and the copper member are joined with each other at a melting point of 250°C or higher by a first bonding member made mainly of zinc (Zn), and the bonding member is formed in an area near to a boundary surface with the semiconductor element in a manner that nickel (Ni) may be inclined and spread. COPYRIGHT: (C)2005,JPO&NCIPI

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