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    • 2. 发明授权
    • Circuit breaking device
    • 断路装置
    • US5737162A
    • 1998-04-07
    • US693351
    • 1996-08-06
    • Hiroki ItoTakashi MoriyamaKenji KameiSuenobu HamanoEtsuo NittaKazuhiko AraiNaoaki TakejiKoji TakahataMasayuki Hatano
    • Hiroki ItoTakashi MoriyamaKenji KameiSuenobu HamanoEtsuo NittaKazuhiko AraiNaoaki TakejiKoji TakahataMasayuki Hatano
    • H01H33/14H01H33/59H02H3/00
    • H01H33/596H01H33/143
    • An objective of this invention is to provide a DC circuit breaking device having functions for transmitting direct currents to an electric power system and interrupting direct currents to the electric power system under abnormal conditions such as grounding and short-circuits, where the DC circuit breaking device can minimize the capacity of a condenser for the commuting circuit while rapidly changing the arc voltage to cause arc currents to be quickly extended and vibrated in order to interrupt direct currents in a short arc time. This DC circuit breaking device includes a main DC circuit breaker for interrupting the transmission of direct currents to an electric power system and a DC circuit breaker that is connected in series to the main DC circuit breaker and which is smaller than the main DC circuit breaker. The circuit breaking device also includes a commutation circuit that is connected in parallel to the DC circuit breaker and the small DC circuit breaker which are connected together in series and which is constituted by a reactor and a condenser. The circuit breaking device also includes a surge absorber for absorbing a surged voltage applied to for the condenser.
    • 本发明的目的是提供一种直流断路装置,其具有在直流断路装置等异常条件下向电力系统发送直流电流和中断到电力系统的直流的功能。 可以最小化通勤电路的电容器的容量,同时快速改变电弧电压,使电弧电流迅速延伸和振动,以便在短时间内中断直流电流。 该DC断路装置包括用于中断与电力系统的直流的传输的主DC断路器和与主DC断路器串联连接并且小于主DC断路器的DC断路器。 断路装置还包括与DC断路器和小型DC断路器并联连接的换向电路,它们串联连接在一起并且由反应器和冷凝器构成。 断路装置还包括用于吸收施加到冷凝器的浪涌电压的浪涌吸收器。
    • 4. 发明授权
    • Semiconductor manufacturing apparatus and method for manufacturing semiconductor device
    • 半导体制造装置及半导体装置的制造方法
    • US08901012B2
    • 2014-12-02
    • US13599358
    • 2012-08-30
    • Masayuki HatanoHiroshi Tokue
    • Masayuki HatanoHiroshi Tokue
    • C23C16/52H01L21/67C23C16/44
    • C23C16/52B82Y10/00B82Y40/00C23C16/4401G03F7/0002H01L21/6715
    • According to one embodiment, a semiconductor manufacturing apparatus includes a substrate stage, a transfer unit, and a control unit. A substrate is settable on the substrate stage. The transfer unit is configured to transfer a pattern having an uneven configuration onto a major surface of the substrate by attachably and removably holding a template. The pattern is provided in the transfer surface. The control unit is configured to acquire information relating to a number of foreign objects on the major surface prior to the transferring of the pattern. The control unit adds the number for a plurality of the substrates including the pattern transferred by the transfer unit. The control unit causes the transfer unit not to implement the transferring of the pattern in the case where the sum has reached the upper limit.
    • 根据一个实施例,半导体制造装置包括基板台,转印单元和控制单元。 衬底可在衬底台上设置。 转印单元被配置为通过可附接地和可移除地保持模板将具有不均匀构造的图案转印到基板的主表面上。 转印面上设有图案。 控制单元被配置为在传送图案之前获取与主表面上的多个异物相关的信息。 控制单元添加包括由传送单元传送的图案的多个基板的数量。 在总和达到上限的情况下,控制单元使得传送单元不执行图案的传送。
    • 10. 发明授权
    • Fine processing method, fine processing apparatus, and recording medium with fine processing program recorded thereon
    • 精加工方法,精细加工装置以及记录有精加工程序的记录介质
    • US08691123B2
    • 2014-04-08
    • US13204844
    • 2011-08-08
    • Yasutada NakagawaTakuya KonoIkuo YonedaMasayuki Hatano
    • Yasutada NakagawaTakuya KonoIkuo YonedaMasayuki Hatano
    • B29C43/58
    • G05B19/418B82Y10/00B82Y40/00G03F7/0002G03F7/16
    • According to one embodiment, a fine processing method includes determining a resist amount required for each first region of a pattern formation surface and a total amount of resist. The method include dividing the total amount of resist by a volume of one resist drop to determine the resist drops total number. The method include determining a provisional position for the resist drop of the total number. The method include assigning the each first region to nearest one resist drop, and partitioning again the pattern formation surface into second regions assigned to the each resist drop. The method include determining a divided value by dividing the volume of the one resist drop by the required total amount of resist determined. The method include finalizing a final position of the each resist drop, if a distribution of the divided value in the pattern formation surface falls within a target range.
    • 根据一个实施例,精细处理方法包括确定图案形成表面的每个第一区域和抗蚀剂总量所需的抗蚀剂量。 该方法包括将抗蚀剂的总量除以一个抗蚀剂滴的体积以确定抗蚀剂滴数总数。 该方法包括确定总数的抗蚀剂落下的临时位置。 该方法包括将每个第一区域分配给最接近的一个抗蚀剂层,以及再次将图案形成表面分割成分配给每个抗蚀剂层的第二区域。 该方法包括通过将一个抗蚀剂液滴的体积除以所需的抗蚀剂总量确定分割值。 如果图案形成表面中的分割值的分布落在目标范围内,则该方法包括确定每个抗蚀剂液滴的最终位置。