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1. 发明申请

US20070091535A1 TEMPERATURE CONTROLLED SEMICONDUCTOR PROCESSING CHAMBER LINER 审中-公开
标题翻译：温度控制半导体加工室内衬
公开(公告)号：US20070091535A1
公开(公告)日：2007-04-26
申请号：US11561112
申请日：2006-11-17
申请人： Hamid Noorbakhsh , Siamak Salimian , Paul Luscher , James Carducci , Evans Lee , Kaushik Vaidya , Hongqing Shan , Michael Welch
发明人： Hamid Noorbakhsh , Siamak Salimian , Paul Luscher , James Carducci , Evans Lee , Kaushik Vaidya , Hongqing Shan , Michael Welch
IPC分类号： H01H47/26 , H01H47/32 , H01H50/12
CPC分类号： C23C16/45563 , C23C16/4401 , C23C16/4411 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01J2237/2001
摘要： A thermally controlled chamber liner comprising a passage having an inlet and outlet adapted to flow a fluid through the one or more fluid passages formed at least partially therein. The chamber liner may comprise a first liner, a second liner or both a first liner and a second liner. The thermally controlled chamber liner maintains a predetermined temperature by running fluid from a temperature controlled, fluid source through the fluid passages. By maintaining a predetermined temperature, deposition of films on the chamber liner is discouraged and particulate generation due to stress cracking of deposited films is minimized.
摘要翻译：一种热控腔室衬套，其包括具有入口和出口的通道，其适于使流体流过至少部分地形成在其中的一个或多个流体通道。腔室衬套可以包括第一衬垫，第二衬垫或第一衬垫和第二衬垫两者。热控腔室衬里通过将流体从温度受控的流体源流过流体通道来维持预定的温度。通过保持预定的温度，阻止膜在室衬里上的沉积，并且由于沉积膜的应力开裂引起的颗粒的产生被最小化。

2. 发明申请

US20050003675A1 Dielectric etch chamber with expanded process window 审中-公开
标题翻译：介质蚀刻室具有扩展的工艺窗口
公开(公告)号：US20050003675A1
公开(公告)日：2005-01-06
申请号：US10863590
申请日：2004-06-07
申请人： James Carducci , Hamid Noorbakhsh , Evans Lee , Bryan Pu , Hongqing Shan , Claes Bjorkman , Siamak Salimian , Paul Luscher , Michael Welch
发明人： James Carducci , Hamid Noorbakhsh , Evans Lee , Bryan Pu , Hongqing Shan , Claes Bjorkman , Siamak Salimian , Paul Luscher , Michael Welch
IPC分类号： H01J37/32 , H01L21/00 , H01L21/311 , H01L21/60 , H01L21/683 , H01L21/687 , H01L21/768 , C23F1/00
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68757 , H01L21/68785 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.
摘要翻译：一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

3. 发明授权

US06863835B1 Magnetic barrier for plasma in chamber exhaust 失效
标题翻译：室内排气等离子体的磁屏障
公开(公告)号：US06863835B1
公开(公告)日：2005-03-08
申请号：US09557990
申请日：2000-04-25
申请人： James D. Carducci , Hamid Noorbakhsh , Evans Y. Lee , Hongqing Shan , Siamak Salimian , Paul E. Luscher , Michael D. Welch
发明人： James D. Carducci , Hamid Noorbakhsh , Evans Y. Lee , Hongqing Shan , Siamak Salimian , Paul E. Luscher , Michael D. Welch
IPC分类号： H05H1/46 , C23C16/44 , C23C16/50 , H01J37/32 , H01L21/205 , H01L21/3065 , B44C1/22 , C23C16/00 , H01L21/306
CPC分类号： H01J37/32834 , C23C16/4412 , H01J37/32623 , H01J37/3266
摘要： A plasma chamber apparatus and method employing a magnet system to block the plasma within the chamber interior from reaching the exhaust pump. An exhaust channel between the chamber interior and the pump includes a magnet and at least one deflector that creates turbulence in the flow of exhaust gases. The magnetic field and the turbulence produced by the deflector both increase the rate of recombination of charged particles in the gases, thereby reducing the concentration of charged particles sufficiently to quench the plasma downstream of the magnet and deflector, thereby preventing the plasma body within the chamber from reaching the exhaust pump. The plasma confinement effect of the magnetic field permits the use of a wider and/or less sinuous exhaust channel than would be required to block the plasma without the magnetic field. Therefore, the pressure drop across the exhaust channel can be reduced in comparison with prior art designs that rely entirely on the sinuousness of the exhaust channel to block the plasma. Alternatively, if the magnetic field is strong enough, the magnetic field alone can block the plasma from reaching the exhaust pump without the need for any deflector in the exhaust channel.
摘要翻译：一种等离子体室装置和方法，其采用磁体系统阻挡室内的等离子体到达排气泵。腔室内部和泵之间的排气通道包括一个磁体和至少一个在废气流中产生湍流的偏转器。由偏转器产生的磁场和湍流都增加了气体中带电粒子的复合速率，从而充分降低了带电粒子的浓度，使得等离子体和导流板的下游猝灭，从而防止了等离子体在腔室内从到达排气泵。磁场的等离子体约束效应允许使用比没有磁场阻挡等离子体所需要的更宽和/或更少的弯曲的排气通道。因此，与完全依赖于排气通道的弯曲度以阻挡等离子体的现有技术设计相比，可以减小排气通道两侧的压降。或者，如果磁场足够强，则单独的磁场可以阻止等离子体到达排气泵，而不需要排气通道中的任何偏转器。

4. 发明授权

US06773544B2 Magnetic barrier for plasma in chamber exhaust 有权
标题翻译：室内排气等离子体的磁屏障
公开(公告)号：US06773544B2
公开(公告)日：2004-08-10
申请号：US09775173
申请日：2001-01-31
申请人： James D. Carducci , Hamid Noorbakhsh , Evans Y. Lee , Hongqing Shan , Siamak Salimian , Paul E. Luscher , Michael D. Welch
发明人： James D. Carducci , Hamid Noorbakhsh , Evans Y. Lee , Hongqing Shan , Siamak Salimian , Paul E. Luscher , Michael D. Welch
IPC分类号： H01L21302
CPC分类号： H01J37/32834 , C23C16/4412 , H01J37/32623 , H01J37/3266
摘要： The invention concerns a plasma reactor employing a chamber enclosure including a process gas inlet and defining a plasma processing region. A workpiece support pedestal capable of supporting a workpiece at processing location faces the plasma processing region, the pedestal and enclosure being spaced from one another to define a pumping annulus therebetween having facing walls in order to permit the process of gas to be evacuated therethrough from the process region. A pair of opposing plasma confinement magnetic poles within one of the facing walls of the annulus, the opposing magnetic poles being axially displaced from one another. The magnetic poles are axially displaced below the processing location by a distance which exceeds a substantial fraction of a spacing between the facing walls of the annulus.
摘要翻译：本发明涉及一种使用包括工艺气体入口并限定等离子体处理区域的室外壳的等离子体反应器。能够在加工位置处支撑工件的工件支撑基座面对等离子体处理区域，基座和外壳彼此间隔开，以在它们之间限定其间具有面向壁的泵送环形空间，以便允许气体从其中排出过程区域。一对相对的等离子体限制磁极在环形空间的相对的壁之一内，相对的磁极彼此轴向移位。磁极在加工位置下方轴向移动一定距离，该距离超过环形面的相对壁之间的间隔的相当大的一部分。

5. 发明授权

US06232236B1 Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing system 失效
标题翻译：用于控制半导体晶片处理系统中的等离子体均匀性的装置和方法
公开(公告)号：US06232236B1
公开(公告)日：2001-05-15
申请号：US09365999
申请日：1999-08-03
申请人： Hongqing Shan , Claes Bjorkman , Paul Luscher , Richard Mett , Michael Welch
发明人： Hongqing Shan , Claes Bjorkman , Paul Luscher , Richard Mett , Michael Welch
IPC分类号： H01L2100
CPC分类号： H01J37/32082 , H01J37/32165
摘要： An apparatus and method for controlling a plasma in a plasma processing system. The apparatus comprises a wafer support pedestal surrounded by a process kit that is driven by an RF signal. Both an electrode (cathode) in the pedestal and the process kit are driven with an RF signal to establish a primary plasma above the pedestal and a secondary plasma above the process kit.
摘要翻译：一种用于控制等离子体处理系统中的等离子体的装置和方法。该装置包括由RF信号驱动的处理套件包围的晶片支撑台座。基座中的电极（阴极）和处理套件都用RF信号驱动，以在基座上建立初级等离子体，并在工艺组件上方形成二次等离子体。

6. 发明授权

US06831742B1 Monitoring substrate processing using reflected radiation 有权
标题翻译：使用反射辐射监测基板处理
公开(公告)号：US06831742B1
公开(公告)日：2004-12-14
申请号：US09695577
申请日：2000-10-23
申请人： Zhifeng Sui , Hongqing Shan , Nils Johansson , Hamid Noorbakhsh , Yu Guan
发明人： Zhifeng Sui , Hongqing Shan , Nils Johansson , Hamid Noorbakhsh , Yu Guan
IPC分类号： G01J400
CPC分类号： G01N21/956 , G01N21/21 , G01N21/71 , G01N21/9501 , H01J37/32935 , H01L21/31116 , H01L21/31633
摘要： A substrate processing apparatus 27 comprises a chamber 35 capable of processing a substrate 20, a radiation source 58 to provide a radiation, a radiation polarizer 59 adapted to polarize the radiation to one or more polarization angles that are selected in relation to an orientation 33 of a feature 25 being processed on the substrate 20, a radiation detector 54 to detect radiation reflected from the substrate 20 during processing and generate a signal, and a controller 100 to process the signal.
摘要翻译：衬底处理装置27包括能够处理衬底20的腔室35，用于提供辐射的辐射源58，适于将辐射极化到一个或多个偏振角的辐射偏振器59，所述偏振角相对于在衬底20上处理的特征25，用于在处理期间检测从衬底20反射的辐射并产生信号的辐射检测器54以及处理该信号的控制器100。

7. 发明申请

US20060039781A1 Advanced low cost high throughput processing platform 有权
标题翻译：先进的低成本高吞吐量处理平台
公开(公告)号：US20060039781A1
公开(公告)日：2006-02-23
申请号：US11097412
申请日：2005-04-01
申请人： Leszek Niewmierzycki , David Barker , Michael Kuhlman , Ryan Pakulski , Hongqing Shan , Martin Zucker
发明人： Leszek Niewmierzycki , David Barker , Michael Kuhlman , Ryan Pakulski , Hongqing Shan , Martin Zucker
IPC分类号： H01L21/677
CPC分类号： B65G15/12 , H01L21/67742 , H01L21/67766 , H01L21/68707 , Y10S414/135 , Y10S414/139
摘要： A wafer processing system and method in which a wafer, having a diameter, is movable between a loadlock and a processing chamber. A transfer chamber is arranged for selective pressure communication with the loadlock and the processing chamber. The transfer chamber having a configuration of lateral extents such that the wafer is movable through the transfer chamber between the loadlock and processing chamber along a wafer transfer path and the configuration of lateral extents causes the wafer, having the wafer diameter and moving along the wafer transfer path, to interfere with at least one of the loadlock and the processing chamber for any position along the wafer transfer path. The wafer includes a center and the wafer transfer path cab be defined by movement of the center through the transfer chamber. Swing arms are described that can independently move by different angles in opposing directions from a home position.
摘要翻译：一种晶片处理系统和方法，其中具有直径的晶片可在负载锁和处理室之间移动。传送室被布置成用于与装载锁和处理室的选择性压力连通。传送室具有横向范围的构造，使得晶片可沿着晶片传送路径移动通过负载锁和处理室之间的传送室，并且横向范围的配置导致具有晶片直径并沿着晶片传送移动的晶片路径，以便沿着晶片传送路径的任何位置干扰负载锁和处理室中的至少一个。晶片包括中心，并且晶片传送路径驾驶室由中心通过传送室的运动限定。描述了可以从起始位置以相反方向独立地移动不同角度的摆动臂。

8. 发明授权

US06905624B2 Interferometric endpoint detection in a substrate etching process 失效
标题翻译：基板蚀刻工艺中的干涉测量端点检测
公开(公告)号：US06905624B2
公开(公告)日：2005-06-14
申请号：US10615159
申请日：2003-07-07
申请人： Coriolan I. Frum , Zhifeng Sui , Hongqing Shan
发明人： Coriolan I. Frum , Zhifeng Sui , Hongqing Shan
IPC分类号： H01L21/66 , C23F1/00 , C23F4/00 , C23F4/02 , G01N21/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/461 , H01L21/465
CPC分类号： H01J37/32963 , H01J37/32935
摘要： A method of etching a substrate includes placing a substrate in a process zone. The substrate has a material with a thickness, and the material has exposed regions between features of a patterned mask. An etchant gas is introduced into the process zone. The etchant gas is energized to etch the material. An endpoint of etching the material of the substrate is determined by (i) reflecting a light beam from the substrate, the light beam having a wavelength selected to have a coherence length in the substrate of from about 1.5 to about 4 times the thickness of the material, and (ii) detecting the reflected light beam to determine an endpoint of the substrate etching process. Additionally, the wavelength of the light beam can be selected to maximize an absorption differential that is a difference between the absorption of the light beam in the patterned mask and the absorption of the light beam in the material.
摘要翻译：蚀刻衬底的方法包括将衬底放置在处理区中。衬底具有厚度的材料，并且材料在图案化掩模的特征之间具有曝光区域。将蚀刻剂气体引入过程区域。蚀刻剂气体通电以蚀刻材料。通过（i）反射来自衬底的光束来确定蚀刻衬底的材料的端点，所述光束具有被选择为具有衬底中的相干长度的波长为其厚度的约1.5至约4倍材料，和（ii）检测反射光束以确定基板蚀刻工艺的端点。此外，可以选择光束的波长以最大化作为图案化掩模中的光束的吸收与材料中光束的吸收之间的差异的吸收差异。

9. 发明授权

US06829056B1 Monitoring dimensions of features at different locations in the processing of substrates 失效
标题翻译：监测基板加工中不同位置特征的尺寸
公开(公告)号：US06829056B1
公开(公告)日：2004-12-07
申请号：US10646943
申请日：2003-08-21
申请人： Michael Barnes , John Holland , Hongqing Shan , Bryan Y. Pu , Mohit Jain , Zhifeng Sui , Michael D. Armacost , Neil E. Hanson , Diana Xiaobing Ma , Ashok K. Sinha , Dan Maydan
发明人： Michael Barnes , John Holland , Hongqing Shan , Bryan Y. Pu , Mohit Jain , Zhifeng Sui , Michael D. Armacost , Neil E. Hanson , Diana Xiaobing Ma , Ashok K. Sinha , Dan Maydan
IPC分类号： G01B1114
CPC分类号： H01L21/67253 , H01J37/32935 , H01L21/67069
摘要： A substrate processing apparatus has a chamber having a substrate support, gas distributor, gas energizer, and gas exhaust port. A process monitor is provided to monitor features in a first region of the substrate and generate a corresponding first signal, and to monitor features in a second region of the substrate and generate a second signal. A chamber controller receives and evaluates the first and second signals, and operates the chamber in relation to the signals. For example, the chamber controller can select a process recipe depending upon the signal values. The chamber controller can also set a process parameter at a first level in a first processing sector and at a second level in a second processing sector. The apparatus provides a closed control loop to independently monitor and control processing of features at different regions of the substrate.
摘要翻译：基板处理装置具有具有基板支撑件，气体分配器，气体激励器和排气口的腔室。提供过程监视器以监测衬底的第一区域中的特征并产生相应的第一信号，并且监测衬底的第二区域中的特征并产生第二信号。室控制器接收并评估第一和第二信号，并相对于信号操作室。例如，腔室控制器可以根据信号值选择工艺配方。腔室控制器还可以在第一处理扇区中将处理参数设置在第一电平处，并在第二处理扇区中将第二电平设置为第二电平。该装置提供一个闭合的控制回路以独立地监测和控制基板的不同区域处的特征的处理。

10. 发明授权

US06613689B2 Magnetically enhanced plasma oxide etch using hexafluorobutadiene 失效
公开(公告)号：US06613689B2
公开(公告)日：2003-09-02
申请号：US10144365
申请日：2002-05-13
申请人： Jingbao Liu , Takehiko Komatsu , Hongqing Shan , Keji Horioka , Bryan Y Pu
发明人： Jingbao Liu , Takehiko Komatsu , Hongqing Shan , Keji Horioka , Bryan Y Pu
IPC分类号： H01L21302
CPC分类号： H01L21/31116 , H01L21/76802
摘要： An oxide etch process practiced in a plasma etch reactor, such as a magnetically enhanced reactive ion etch (MERIE) reactor. The etching gas includes approximately equal amounts of a hydrogen-free fluorocarbon, most preferably C4F6, and oxygen and a much larger amount of argon diluent gas. The magnetic field is preferably maintained above about 50 gauss and the pressure at 40 milliTorr or above with chamber residence times of less than 70 milliseconds. A two-step process may be used for etching holes with very high aspect ratios. In the second step, the magnetic filed and the oxygen flow are reduced. Other fluorocarbons may be substituted which have F/C ratios of less than 2 and more preferably no more than 1.6 or 1.5.

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