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1. 发明授权

US06232236B1 Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing system 失效
标题翻译：用于控制半导体晶片处理系统中的等离子体均匀性的装置和方法
公开(公告)号：US06232236B1
公开(公告)日：2001-05-15
申请号：US09365999
申请日：1999-08-03
申请人： Hongqing Shan , Claes Bjorkman , Paul Luscher , Richard Mett , Michael Welch
发明人： Hongqing Shan , Claes Bjorkman , Paul Luscher , Richard Mett , Michael Welch
IPC分类号： H01L2100
CPC分类号： H01J37/32082 , H01J37/32165
摘要： An apparatus and method for controlling a plasma in a plasma processing system. The apparatus comprises a wafer support pedestal surrounded by a process kit that is driven by an RF signal. Both an electrode (cathode) in the pedestal and the process kit are driven with an RF signal to establish a primary plasma above the pedestal and a secondary plasma above the process kit.
摘要翻译：一种用于控制等离子体处理系统中的等离子体的装置和方法。该装置包括由RF信号驱动的处理套件包围的晶片支撑台座。基座中的电极（阴极）和处理套件都用RF信号驱动，以在基座上建立初级等离子体，并在工艺组件上方形成二次等离子体。

2. 发明申请

US20050003675A1 Dielectric etch chamber with expanded process window 审中-公开
标题翻译：介质蚀刻室具有扩展的工艺窗口
公开(公告)号：US20050003675A1
公开(公告)日：2005-01-06
申请号：US10863590
申请日：2004-06-07
申请人： James Carducci , Hamid Noorbakhsh , Evans Lee , Bryan Pu , Hongqing Shan , Claes Bjorkman , Siamak Salimian , Paul Luscher , Michael Welch
发明人： James Carducci , Hamid Noorbakhsh , Evans Lee , Bryan Pu , Hongqing Shan , Claes Bjorkman , Siamak Salimian , Paul Luscher , Michael Welch
IPC分类号： H01J37/32 , H01L21/00 , H01L21/311 , H01L21/60 , H01L21/683 , H01L21/687 , H01L21/768 , C23F1/00
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68757 , H01L21/68785 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.
摘要翻译：一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

3. 发明申请

US20070091535A1 TEMPERATURE CONTROLLED SEMICONDUCTOR PROCESSING CHAMBER LINER 审中-公开
标题翻译：温度控制半导体加工室内衬
公开(公告)号：US20070091535A1
公开(公告)日：2007-04-26
申请号：US11561112
申请日：2006-11-17
申请人： Hamid Noorbakhsh , Siamak Salimian , Paul Luscher , James Carducci , Evans Lee , Kaushik Vaidya , Hongqing Shan , Michael Welch
发明人： Hamid Noorbakhsh , Siamak Salimian , Paul Luscher , James Carducci , Evans Lee , Kaushik Vaidya , Hongqing Shan , Michael Welch
IPC分类号： H01H47/26 , H01H47/32 , H01H50/12
CPC分类号： C23C16/45563 , C23C16/4401 , C23C16/4411 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01J2237/2001
摘要： A thermally controlled chamber liner comprising a passage having an inlet and outlet adapted to flow a fluid through the one or more fluid passages formed at least partially therein. The chamber liner may comprise a first liner, a second liner or both a first liner and a second liner. The thermally controlled chamber liner maintains a predetermined temperature by running fluid from a temperature controlled, fluid source through the fluid passages. By maintaining a predetermined temperature, deposition of films on the chamber liner is discouraged and particulate generation due to stress cracking of deposited films is minimized.
摘要翻译：一种热控腔室衬套，其包括具有入口和出口的通道，其适于使流体流过至少部分地形成在其中的一个或多个流体通道。腔室衬套可以包括第一衬垫，第二衬垫或第一衬垫和第二衬垫两者。热控腔室衬里通过将流体从温度受控的流体源流过流体通道来维持预定的温度。通过保持预定的温度，阻止膜在室衬里上的沉积，并且由于沉积膜的应力开裂引起的颗粒的产生被最小化。

4. 发明授权

US06432259B1 Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates 有权
标题翻译：等离子体反应器冷却的天花板，具有热隔离等离子体加热的微型气体分布板阵列
公开(公告)号：US06432259B1
公开(公告)日：2002-08-13
申请号：US09461682
申请日：1999-12-14
申请人： Hamid Noorbakhsh , Michael Welch , Siamak Salimian , Paul Luscher , Hongching Shan , Kaushik Vaidya , Jim Carducci , Evans Lee
发明人： Hamid Noorbakhsh , Michael Welch , Siamak Salimian , Paul Luscher , Hongching Shan , Kaushik Vaidya , Jim Carducci , Evans Lee
IPC分类号： H05H100
CPC分类号： H01J37/32522 , H01J37/321 , H01J37/3244
摘要： A plasma reactor embodying the invention includes a wafer support and a chamber enclosure member having an interior surface generally facing the wafer support. At least one miniature gas distribution plate for introducing a process gas into the reactor is supported on the chamber enclosure member and has an outlet surface which is a fraction of the area of the interior surface of said wafer support. A coolant system maintains the chamber enclosure member at a low temperature, and the miniature gas distribution plate is at least partially thermally insulated from the chamber enclosure member so that it is maintained at a higher temperature by plasma heating.
摘要翻译：体现本发明的等离子体反应器包括晶片支撑件和室外壳构件，其具有大致面向晶片支撑件的内表面。用于将工艺气体引入反应器的至少一个微型气体分配板被支撑在腔室外壳构件上，并且具有出口表面，该出口表面是所述晶片支撑件的内表面区域的一部分。冷却剂系统将室外壳构件保持在低温，并且微型气体分配板与腔室外壳构件至少部分热绝缘，使得其通过等离子体加热保持在较高温度。

5. 发明授权

US4382811A Method of producing protective coatings on metal parts to be used in contact with molten glass 失效
标题翻译：在与熔融玻璃接触的金属部件上制备保护涂层的方法
公开(公告)号：US4382811A
公开(公告)日：1983-05-10
申请号：US247246
申请日：1981-03-25
申请人： Paul Luscher , Hans-Theo Steine
发明人： Paul Luscher , Hans-Theo Steine
IPC分类号： C03B9/48 , C03B40/00 , C23C4/06 , B05D1/06
CPC分类号： C03B9/48 , C03B40/00 , C23C4/06
摘要： Method of producing protective coatings on metal parts to be used in contact with molten glass.The method of the invention comprises spraying onto the surface to be coated, by a thermal spraying process such as flame or plasma spraying, a powdered material consisting essentially of at least 60% by weight of chromium oxide, from 0 to 40% by weight of a nickel-base alloy such as a nickel-chromium alloy and from 0 to 20% by weight of metal oxides such as aluminum, titanium and zirconium oxides.
摘要翻译：在与熔融玻璃接触的金属部件上制备保护涂层的方法。本发明的方法包括通过诸如火焰或等离子体喷涂的热喷涂方法喷涂到待涂覆的表面上，粉末材料基本上由至少60重量％的氧化铬组成，0至40重量％诸如镍 - 铬合金的镍基合金和0-20重量％的金属氧化物如铝，钛和锆氧化物。

6. 发明授权

US06353210B1 Correction of wafer temperature drift in a plasma reactor based upon continuous wafer temperature measurements using and in-situ wafer temperature optical probe 有权
标题翻译：基于使用和原位晶圆温度光学探针的连续晶片温度测量，校正等离子体反应器中的晶片温度漂移
公开(公告)号：US06353210B1
公开(公告)日：2002-03-05
申请号：US09547359
申请日：2000-04-11
申请人： Hamid Norrbakhsh , Mike Welch , Paul Luscher , Siamak Salimian , Brad Mays
发明人： Hamid Norrbakhsh , Mike Welch , Paul Luscher , Siamak Salimian , Brad Mays
IPC分类号： H05B100
CPC分类号： H01L21/67248 , C30B25/16 , C30B31/18
摘要： The invention solves the problem of continuously monitoring wafer temperature during processing using an optical or fluoro-optical temperature sensor including an optical fiber having an end next to and facing the backside of the wafer. This optical fiber is accommodated without disturbing plasma processing by providing in one of the wafer lift pins an axial void through which the optical fiber passes. The end of the fiber facing the wafer backside is coincident with the end of the hollow lift pin. The other end is coupled via an “external” optical fiber to temperature probe electronics external of the reactor chamber. The invention uses direct wafer temperature measurements with a test wafer to establish a data base of wafer temperature behavior as a function of coolant pressure and a data base of wafer temperature behavior as a function of wafer support or “puck” temperature. These data bases are then employed during processing of a production wafer to control coolant pressure in such a manner as to minimize wafer temperature deviation from the desired temperature.
摘要翻译：本发明解决了使用包括具有接近于晶片背面并且面向晶片的端部的光纤的光学或氟光学温度传感器在处理期间连续监测晶片温度的问题。通过在一个晶片提升销中提供光纤通过的轴向空隙来容纳该光纤，而不会干扰等离子体处理。面向晶片背面的纤维的端部与中空提升销的端部重合。另一端通过“外部”光纤耦合到反应室外的温度探针电子设备。本发明使用测试晶片直接进行晶片温度测量，以建立作为冷却剂压力的函数的晶片温度特性的数据库和作为晶片支撑或“固定”温度的函数的晶片温度特性的数据库。然后在生产晶片的处理期间采用这些数据库，以便以最小化晶片温度偏离所需温度的方式来控制冷却剂压力。

7. 发明授权

US4580035A Apparatus for heating food-warmer plates 失效
标题翻译：用于加热食物加热板的设备
公开(公告)号：US4580035A
公开(公告)日：1986-04-01
申请号：US630110
申请日：1984-07-12
申请人： Paul Luscher
发明人： Paul Luscher
IPC分类号： A47J39/02 , H05B1/02 , H05B3/68
CPC分类号： H05B1/023 , H05B3/68 , H05B2203/028
摘要： An apparatus for heating food-warmer plates includes a housing into which a plurality of the food-warmer plates may be slid through slots in a wall of the housing. An electrical heating element is disposed under each food-warmer plate inserted into the housing. The heating elements may be switched on and off individually. In this way it is possible to heat only that number of food-warmer plates which is actually needed.
摘要翻译：用于加热食品加热板的设备包括壳体，多个食物加热板可以通过壳体滑动到壳体的壁中的狭槽中。电加热元件设置在插入壳体内的每个食物加热板下。加热元件可以单独打开和关闭。以这种方式，只能加热实际需要的数量更多的食物加热板。

8. 发明授权

US06575622B2 Correction of wafer temperature drift in a plasma reactor based upon continuous wafer temperature measurements using an in-situ wafer temperature optical probe 有权
公开(公告)号：US06575622B2
公开(公告)日：2003-06-10
申请号：US10013183
申请日：2001-12-07
申请人： Hamid Norrbakhsh , Mike Welch , Paul Luscher , Siamak Salimian , Brad Mays
发明人： Hamid Norrbakhsh , Mike Welch , Paul Luscher , Siamak Salimian , Brad Mays
IPC分类号： G01K114
CPC分类号： H01L21/67248 , C30B25/16 , C30B31/18
摘要： The invention solves the problem of continuously monitoring wafer temperature during processing using an optical or fluoro-optical temperature sensor including an optical fiber having an end next to and facing the backside of the wafer. This optical fiber is accommodated without disturbing plasma processing by providing in one of the wafer lift pins an axial void through which the optical fiber passes. The end of the fiber facing the wafer backside is coincident with the end of the hollow lift pin. The other end is coupled via an “external” optical fiber to temperature probe electronics external of the reactor chamber. The invention uses direct wafer temperature measurements with a test wafer to establish a data base of wafer temperature behavior as a function of coolant pressure and a data base of wafer temperature behavior as a function of wafer support or “puck” temperature. These data bases are then employed during processing of a production wafer to control coolant pressure in such a manner as to minimize wafer temperature deviation from the desired temperature.

9. 发明授权

US4508959A Apparatus for heating stackable dishes 失效
标题翻译：用于加热可堆叠盘的装置
公开(公告)号：US4508959A
公开(公告)日：1985-04-02
申请号：US513096
申请日：1983-07-12
申请人： Paul Luscher
发明人： Paul Luscher
IPC分类号： A47J39/02 , B65G1/07 , F24C15/18 , F27D11/02
CPC分类号： A47J39/025 , B65G1/07
摘要： The present invention relates to an apparatus for heating stackable dishes. The apparatus includes a shaft-like heatable housing with an open top which can be closed off with a cover. A support for a stack of dishes is disposed within the interior of the housing. The support moves translationally in the vertical direction on guide rails and is linked to endless chains which are driven by an electric motor. By operating the electric motor, the support with the stack of dishes is moved to a vertical position which is convenient for removing or inserting dishes. This movement may be executed following an automatic opening of the cover. The operator does not need to bend over or to stretch to reach the dishes. An automatic control further serves to lower the stack of dishes into the housing and to close the cover after the passage of a predetermined time interval at the desired vertical position.
摘要翻译：本发明涉及一种用于加热可堆叠盘的装置。该装置包括具有开口顶部的轴状可加热壳体，其可以用盖封闭。在一个外壳的内部设置一叠餐具的支撑。支撑件在导轨上沿垂直方向平移运动，并与由电动机驱动的环形链连接。通过操作电动机，将具有一叠盘的支撑件移动到垂直位置，这便于去除或插入盘子。该移动可以在自动打开盖子之后执行。操作者不需要弯曲或伸展到达菜肴。自动控制还用于将盘堆叠降低到壳体中，并且在预定时间间隔期望所需垂直位置之后关闭盖子。

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