专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070091535A1 TEMPERATURE CONTROLLED SEMICONDUCTOR PROCESSING CHAMBER LINER 审中-公开
标题翻译：温度控制半导体加工室内衬
公开(公告)号：US20070091535A1
公开(公告)日：2007-04-26
申请号：US11561112
申请日：2006-11-17
申请人： Hamid Noorbakhsh , Siamak Salimian , Paul Luscher , James Carducci , Evans Lee , Kaushik Vaidya , Hongqing Shan , Michael Welch
发明人： Hamid Noorbakhsh , Siamak Salimian , Paul Luscher , James Carducci , Evans Lee , Kaushik Vaidya , Hongqing Shan , Michael Welch
IPC分类号： H01H47/26 , H01H47/32 , H01H50/12
CPC分类号： C23C16/45563 , C23C16/4401 , C23C16/4411 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01J2237/2001
摘要： A thermally controlled chamber liner comprising a passage having an inlet and outlet adapted to flow a fluid through the one or more fluid passages formed at least partially therein. The chamber liner may comprise a first liner, a second liner or both a first liner and a second liner. The thermally controlled chamber liner maintains a predetermined temperature by running fluid from a temperature controlled, fluid source through the fluid passages. By maintaining a predetermined temperature, deposition of films on the chamber liner is discouraged and particulate generation due to stress cracking of deposited films is minimized.
摘要翻译：一种热控腔室衬套，其包括具有入口和出口的通道，其适于使流体流过至少部分地形成在其中的一个或多个流体通道。腔室衬套可以包括第一衬垫，第二衬垫或第一衬垫和第二衬垫两者。热控腔室衬里通过将流体从温度受控的流体源流过流体通道来维持预定的温度。通过保持预定的温度，阻止膜在室衬里上的沉积，并且由于沉积膜的应力开裂引起的颗粒的产生被最小化。

2. 发明申请

US20050003675A1 Dielectric etch chamber with expanded process window 审中-公开
标题翻译：介质蚀刻室具有扩展的工艺窗口
公开(公告)号：US20050003675A1
公开(公告)日：2005-01-06
申请号：US10863590
申请日：2004-06-07
申请人： James Carducci , Hamid Noorbakhsh , Evans Lee , Bryan Pu , Hongqing Shan , Claes Bjorkman , Siamak Salimian , Paul Luscher , Michael Welch
发明人： James Carducci , Hamid Noorbakhsh , Evans Lee , Bryan Pu , Hongqing Shan , Claes Bjorkman , Siamak Salimian , Paul Luscher , Michael Welch
IPC分类号： H01J37/32 , H01L21/00 , H01L21/311 , H01L21/60 , H01L21/683 , H01L21/687 , H01L21/768 , C23F1/00
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68757 , H01L21/68785 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.
摘要翻译：一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

3. 发明授权

US06432259B1 Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates 有权
标题翻译：等离子体反应器冷却的天花板，具有热隔离等离子体加热的微型气体分布板阵列
公开(公告)号：US06432259B1
公开(公告)日：2002-08-13
申请号：US09461682
申请日：1999-12-14
申请人： Hamid Noorbakhsh , Michael Welch , Siamak Salimian , Paul Luscher , Hongching Shan , Kaushik Vaidya , Jim Carducci , Evans Lee
发明人： Hamid Noorbakhsh , Michael Welch , Siamak Salimian , Paul Luscher , Hongching Shan , Kaushik Vaidya , Jim Carducci , Evans Lee
IPC分类号： H05H100
CPC分类号： H01J37/32522 , H01J37/321 , H01J37/3244
摘要： A plasma reactor embodying the invention includes a wafer support and a chamber enclosure member having an interior surface generally facing the wafer support. At least one miniature gas distribution plate for introducing a process gas into the reactor is supported on the chamber enclosure member and has an outlet surface which is a fraction of the area of the interior surface of said wafer support. A coolant system maintains the chamber enclosure member at a low temperature, and the miniature gas distribution plate is at least partially thermally insulated from the chamber enclosure member so that it is maintained at a higher temperature by plasma heating.
摘要翻译：体现本发明的等离子体反应器包括晶片支撑件和室外壳构件，其具有大致面向晶片支撑件的内表面。用于将工艺气体引入反应器的至少一个微型气体分配板被支撑在腔室外壳构件上，并且具有出口表面，该出口表面是所述晶片支撑件的内表面区域的一部分。冷却剂系统将室外壳构件保持在低温，并且微型气体分配板与腔室外壳构件至少部分热绝缘，使得其通过等离子体加热保持在较高温度。

4. 发明授权

US06863835B1 Magnetic barrier for plasma in chamber exhaust 失效
标题翻译：室内排气等离子体的磁屏障
公开(公告)号：US06863835B1
公开(公告)日：2005-03-08
申请号：US09557990
申请日：2000-04-25
申请人： James D. Carducci , Hamid Noorbakhsh , Evans Y. Lee , Hongqing Shan , Siamak Salimian , Paul E. Luscher , Michael D. Welch
发明人： James D. Carducci , Hamid Noorbakhsh , Evans Y. Lee , Hongqing Shan , Siamak Salimian , Paul E. Luscher , Michael D. Welch
IPC分类号： H05H1/46 , C23C16/44 , C23C16/50 , H01J37/32 , H01L21/205 , H01L21/3065 , B44C1/22 , C23C16/00 , H01L21/306
CPC分类号： H01J37/32834 , C23C16/4412 , H01J37/32623 , H01J37/3266
摘要： A plasma chamber apparatus and method employing a magnet system to block the plasma within the chamber interior from reaching the exhaust pump. An exhaust channel between the chamber interior and the pump includes a magnet and at least one deflector that creates turbulence in the flow of exhaust gases. The magnetic field and the turbulence produced by the deflector both increase the rate of recombination of charged particles in the gases, thereby reducing the concentration of charged particles sufficiently to quench the plasma downstream of the magnet and deflector, thereby preventing the plasma body within the chamber from reaching the exhaust pump. The plasma confinement effect of the magnetic field permits the use of a wider and/or less sinuous exhaust channel than would be required to block the plasma without the magnetic field. Therefore, the pressure drop across the exhaust channel can be reduced in comparison with prior art designs that rely entirely on the sinuousness of the exhaust channel to block the plasma. Alternatively, if the magnetic field is strong enough, the magnetic field alone can block the plasma from reaching the exhaust pump without the need for any deflector in the exhaust channel.
摘要翻译：一种等离子体室装置和方法，其采用磁体系统阻挡室内的等离子体到达排气泵。腔室内部和泵之间的排气通道包括一个磁体和至少一个在废气流中产生湍流的偏转器。由偏转器产生的磁场和湍流都增加了气体中带电粒子的复合速率，从而充分降低了带电粒子的浓度，使得等离子体和导流板的下游猝灭，从而防止了等离子体在腔室内从到达排气泵。磁场的等离子体约束效应允许使用比没有磁场阻挡等离子体所需要的更宽和/或更少的弯曲的排气通道。因此，与完全依赖于排气通道的弯曲度以阻挡等离子体的现有技术设计相比，可以减小排气通道两侧的压降。或者，如果磁场足够强，则单独的磁场可以阻止等离子体到达排气泵，而不需要排气通道中的任何偏转器。

5. 发明授权

US06773544B2 Magnetic barrier for plasma in chamber exhaust 有权
标题翻译：室内排气等离子体的磁屏障
公开(公告)号：US06773544B2
公开(公告)日：2004-08-10
申请号：US09775173
申请日：2001-01-31
申请人： James D. Carducci , Hamid Noorbakhsh , Evans Y. Lee , Hongqing Shan , Siamak Salimian , Paul E. Luscher , Michael D. Welch
发明人： James D. Carducci , Hamid Noorbakhsh , Evans Y. Lee , Hongqing Shan , Siamak Salimian , Paul E. Luscher , Michael D. Welch
IPC分类号： H01L21302
CPC分类号： H01J37/32834 , C23C16/4412 , H01J37/32623 , H01J37/3266
摘要： The invention concerns a plasma reactor employing a chamber enclosure including a process gas inlet and defining a plasma processing region. A workpiece support pedestal capable of supporting a workpiece at processing location faces the plasma processing region, the pedestal and enclosure being spaced from one another to define a pumping annulus therebetween having facing walls in order to permit the process of gas to be evacuated therethrough from the process region. A pair of opposing plasma confinement magnetic poles within one of the facing walls of the annulus, the opposing magnetic poles being axially displaced from one another. The magnetic poles are axially displaced below the processing location by a distance which exceeds a substantial fraction of a spacing between the facing walls of the annulus.
摘要翻译：本发明涉及一种使用包括工艺气体入口并限定等离子体处理区域的室外壳的等离子体反应器。能够在加工位置处支撑工件的工件支撑基座面对等离子体处理区域，基座和外壳彼此间隔开，以在它们之间限定其间具有面向壁的泵送环形空间，以便允许气体从其中排出过程区域。一对相对的等离子体限制磁极在环形空间的相对的壁之一内，相对的磁极彼此轴向移位。磁极在加工位置下方轴向移动一定距离，该距离超过环形面的相对壁之间的间隔的相当大的一部分。

6. 发明授权

US06364957B1 Support assembly with thermal expansion compensation 失效
标题翻译：支撑组件采用热膨胀补偿
公开(公告)号：US06364957B1
公开(公告)日：2002-04-02
申请号：US09498795
申请日：2000-02-08
申请人： Gerhard M. Schneider , Hamid Noorbakhsh , Bryan Pu , Kaushik Vaidya , Brad Leroy Mays , Hung Dao , Evans Lee , Hongging Shan
发明人： Gerhard M. Schneider , Hamid Noorbakhsh , Bryan Pu , Kaushik Vaidya , Brad Leroy Mays , Hung Dao , Evans Lee , Hongging Shan
IPC分类号： C23C1600
CPC分类号： H01L21/67103 , C23C16/4585 , H01J37/32082 , H01J2237/2001
摘要： A substrate support assembly 30 comprises a substrate support 38 and a collar 130 which may comprise at least one slit 150. The slit allows for thermal expansion compensation in the support assembly 30. The collar 130 may, for example, protect the dielectric 45 from erosion in a process chamber 25. In one version, the collar 130 comprises a clamping ring 200 on the dielectric 45.
摘要翻译：衬底支撑组件30包括衬底支撑件38和可包括至少一个狭缝150的套环130.狭缝允许在支撑组件30中进行热膨胀补偿。套环130可以例如保护电介质45免受侵蚀在一个版本中，套环130包括在电介质45上的夹紧环200。

7. 发明授权

US06797639B2 Dielectric etch chamber with expanded process window 失效
公开(公告)号：US06797639B2
公开(公告)日：2004-09-28
申请号：US10254969
申请日：2002-09-24
申请人： James D Carducci , Hamid Noorbakhsh , Evans Y Lee , Bryan Y Pu , Hongching Shan , Claes Bjorkman , Siamak Salimian , Paul E Luscher , Michael D Welch
发明人： James D Carducci , Hamid Noorbakhsh , Evans Y Lee , Bryan Y Pu , Hongching Shan , Claes Bjorkman , Siamak Salimian , Paul E Luscher , Michael D Welch
IPC分类号： H01L2100
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68757 , H01L21/68785 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

8. 发明授权

US06320736B1 Chuck having pressurized zones of heat transfer gas 有权
标题翻译：夹头具有加热区的传热气体
公开(公告)号：US06320736B1
公开(公告)日：2001-11-20
申请号：US09312909
申请日：1999-05-17
申请人： Shamouil Shamouilian , Arnold Kholodenko , Siamak Salimian , Hamid Noorbakhsh , Efrain Quiles , Dennis S. Grimard
发明人： Shamouil Shamouilian , Arnold Kholodenko , Siamak Salimian , Hamid Noorbakhsh , Efrain Quiles , Dennis S. Grimard
IPC分类号： H01H2300
CPC分类号： H01L21/6831 , C23C16/4586
摘要： A chuck 28 for holding a substrate 4 comprises a surface 27 capable of receiving the substrate 4, the surface 27 having a gas inlet port 40 and a gas exhaust port 42. A non-sealing protrusion is between the gas inlet port 40 and the gas exhaust port 42. The non-sealing protrusion 44 impedes the flow of heat transfer gas between the gas inlet port 40 and the gas exhaust port 42 without blocking the flow of heat transfer gas. Preferably, a sealing protrusion 46 is provided around the periphery of the chuck 28 to form a substantially gas-tight seal with the substrate 4 to enclose and prevent leakage of heat transfer gas into a surrounding chamber 6.
摘要翻译：用于保持基板4的卡盘28包括能够接收基板4的表面27，表面27具有气体入口40和排气口42.非密封突起在气体入口40和气体排气口42.非密封突起44阻止气体入口40和排气口42之间的传热气体的流动，而不阻碍传热气体的流动。优选地，密封突起46设置在卡盘28的周边周围，以与基底4形成基本上气密的密封，以封闭并防止传热气体泄漏到周围室6中。

9. 发明授权

US06716302B2 Dielectric etch chamber with expanded process window 有权
标题翻译：介质蚀刻室具有扩展的工艺窗口
公开(公告)号：US06716302B2
公开(公告)日：2004-04-06
申请号：US10253496
申请日：2002-09-24
申请人： James D Carducci , Hamid Noorbakhsh , Evans Y Lee , Bryan Y Pu , Hongching Shan , Claes Bjorkman , Siamak Salimian , Paul E Luscher , Michael D Welch
发明人： James D Carducci , Hamid Noorbakhsh , Evans Y Lee , Bryan Y Pu , Hongching Shan , Claes Bjorkman , Siamak Salimian , Paul E Luscher , Michael D Welch
IPC分类号： H05H100
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68757 , H01L21/68785 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.
摘要翻译：一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

10. 发明授权

US06831742B1 Monitoring substrate processing using reflected radiation 有权
标题翻译：使用反射辐射监测基板处理
公开(公告)号：US06831742B1
公开(公告)日：2004-12-14
申请号：US09695577
申请日：2000-10-23
申请人： Zhifeng Sui , Hongqing Shan , Nils Johansson , Hamid Noorbakhsh , Yu Guan
发明人： Zhifeng Sui , Hongqing Shan , Nils Johansson , Hamid Noorbakhsh , Yu Guan
IPC分类号： G01J400
CPC分类号： G01N21/956 , G01N21/21 , G01N21/71 , G01N21/9501 , H01J37/32935 , H01L21/31116 , H01L21/31633
摘要： A substrate processing apparatus 27 comprises a chamber 35 capable of processing a substrate 20, a radiation source 58 to provide a radiation, a radiation polarizer 59 adapted to polarize the radiation to one or more polarization angles that are selected in relation to an orientation 33 of a feature 25 being processed on the substrate 20, a radiation detector 54 to detect radiation reflected from the substrate 20 during processing and generate a signal, and a controller 100 to process the signal.
摘要翻译：衬底处理装置27包括能够处理衬底20的腔室35，用于提供辐射的辐射源58，适于将辐射极化到一个或多个偏振角的辐射偏振器59，所述偏振角相对于在衬底20上处理的特征25，用于在处理期间检测从衬底20反射的辐射并产生信号的辐射检测器54以及处理该信号的控制器100。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式