会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • Method Of Manufacturing Photoelectric Conversion Device
    • 制造光电转换装置的方法
    • US20110092013A1
    • 2011-04-21
    • US12977213
    • 2010-12-23
    • Fumito ISAKASho KATOKoji DAIRIKI
    • Fumito ISAKASho KATOKoji DAIRIKI
    • H01L31/18
    • H01L31/1804H01L31/02168H01L31/022433H01L31/03762H01L31/0725H01L31/1864H01L31/202Y02E10/547Y02E10/548Y02P70/521
    • A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.
    • 在单晶半导体衬底的一个表面的深度小于1000nm的区域形成脆性层,在一个表面侧形成第一杂质半导体层和第一电极。 在接合第一电极和支撑衬底之后,使用脆弱层或附近分离单晶半导体衬底作为分离平面,从而在支撑衬底上形成第一单晶半导体层。 在第一单晶半导体层上形成非晶半导体层,通过对非晶半导体层的固相生长进行热处理形成第二单晶半导体层。 在第二单晶半导体层上形成具有与第一杂质半导体层的导电类型相反的导电类型的第二杂质半导体层和第二电极。
    • 2. 发明申请
    • METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE
    • 制造光电转换器件的方法
    • US20120184064A1
    • 2012-07-19
    • US13426655
    • 2012-03-22
    • Fumito ISAKASho KATOKoji DAIRIKI
    • Fumito ISAKASho KATOKoji DAIRIKI
    • H01L31/20
    • H01L31/1804H01L31/02168H01L31/022433H01L31/03762H01L31/0725H01L31/1864H01L31/202Y02E10/547Y02E10/548Y02P70/521
    • A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.
    • 在单晶半导体衬底的一个表面的深度小于1000nm的区域形成脆性层,在一个表面侧形成第一杂质半导体层和第一电极。 在接合第一电极和支撑衬底之后,使用脆弱层或附近分离单晶半导体衬底作为分离平面,从而在支撑衬底上形成第一单晶半导体层。 在第一单晶半导体层上形成非晶半导体层,通过对非晶半导体层的固相生长进行热处理形成第二单晶半导体层。 在第二单晶半导体层上形成具有与第一杂质半导体层的导电类型相反的导电类型的第二杂质半导体层和第二电极。
    • 3. 发明申请
    • WIRELESS CHIP AND MANUFACTURING METHOD THEREOF
    • 无线芯片及其制造方法
    • US20120322212A1
    • 2012-12-20
    • US13596376
    • 2012-08-28
    • Koji DAIRIKIJunya MARUYAMATomoko TAMURAEiji SUGIYAMAYoshitaka DOZEN
    • Koji DAIRIKIJunya MARUYAMATomoko TAMURAEiji SUGIYAMAYoshitaka DOZEN
    • H01L21/56
    • H01L27/1255H01L29/78621H01L29/78627H01L29/78648
    • It is an object of the present invention to reduce the cost of a wireless chip, further, to reduce the cost of a wireless chip by enabling the mass production of a wireless chip, and furthermore, to provide a downsized and lightweight wireless chip. A wireless chip in which a thin film integrated circuit peeled from a glass substrate or a quartz substrate is formed between a first base material and a second base material is provided according to the invention. As compared with a wireless chip formed from a silicon substrate, the wireless chip according to the invention realizes downsizing, thinness, and lightweight. The thin film integrated circuit included in the wireless chip according to the invention at least has an n-type thin film transistor having an LDD (Lightly Doped Drain) structure, a p-type thin film transistor having a single drain structure, and a conductive layer functioning as an antenna.
    • 本发明的目的在于降低无线芯片的成本,并且通过实现无线芯片的批量生产,进一步降低无线芯片的成本,此外,提供小型化,轻量化的无线芯片。 根据本发明,提供一种其中从玻璃基板或石英基板剥离的薄膜集成电路形成在第一基材和第二基材之间的无线芯片。 与由硅基板形成的无线芯片相比,根据本发明的无线芯片实现了小型化,薄型化和轻量化。 包括在根据本发明的无线芯片中的薄膜集成电路至少具有具有LDD(轻掺杂漏极)结构的n型薄膜晶体管,具有单个漏极结构的p型薄膜晶体管和导电 层作为天线起作用。