专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090057672A1 DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：其显示装置及其制造方法
公开(公告)号：US20090057672A1
公开(公告)日：2009-03-05
申请号：US12196798
申请日：2008-08-22
申请人： Satoshi KOBAYASHI , Ikuko KAWAMATA , Koji DAIRIKI , Shigeki KOMORI , Toshiyuki ISA , Shunpei YAMAZAKI
发明人： Satoshi KOBAYASHI , Ikuko KAWAMATA , Koji DAIRIKI , Shigeki KOMORI , Toshiyuki ISA , Shunpei YAMAZAKI
IPC分类号： H01L29/04 , H01L21/336
CPC分类号： H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the inverted-staggered channel-stop-type thin film transistor includes a microcrystalline semiconductor film including a channel formation region, and an impurity region containing an impurity element of one conductivity type is selectively provided in a region which is not overlapped with source and drain electrodes, in the channel formation region of the microcrystalline semiconductor film.
摘要翻译：一种包括具有高电特性和高可靠性的薄膜晶体管的显示装置，以及具有高批量生产率的显示装置的制造方法。在包括反交错通道停止型薄膜晶体管的显示装置中，反交错通道停止型薄膜晶体管包括包含沟道形成区的微晶半导体膜，以及含有杂质元素的杂质区在微晶半导体膜的沟道形成区域中，在不与源极和漏极重叠的区域中选择性地提供一种导电型。

2. 发明申请

US20100285624A1 DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：其显示装置及其制造方法
公开(公告)号：US20100285624A1
公开(公告)日：2010-11-11
申请号：US12838115
申请日：2010-07-16
申请人： Satoshi KOBAYASHI , Ikuko KAWAMATA , Koji DAIRIKI , Shigeki KOMORI , Toshiyuki ISA , Shunpei YAMAZAKI
发明人： Satoshi KOBAYASHI , Ikuko KAWAMATA , Koji DAIRIKI , Shigeki KOMORI , Toshiyuki ISA , Shunpei YAMAZAKI
IPC分类号： H01L33/00
CPC分类号： H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the inverted-staggered channel-stop-type thin film transistor includes a microcrystalline semiconductor film including a channel formation region, and an impurity region containing an impurity element of one conductivity type is selectively provided in a region which is not overlapped with source and drain electrodes, in the channel formation region of the microcrystalline semiconductor film.
摘要翻译：一种包括具有高电特性和高可靠性的薄膜晶体管的显示装置，以及具有高批量生产率的显示装置的制造方法。在包括反交错通道停止型薄膜晶体管的显示装置中，反交错通道停止型薄膜晶体管包括包含沟道形成区的微晶半导体膜，以及含有杂质元素的杂质区在微晶半导体膜的沟道形成区域中，在不与源极和漏极重叠的区域中选择性地提供一种导电型。

3. 发明申请

US20110086475A1 SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US20110086475A1
公开(公告)日：2011-04-14
申请号：US12968656
申请日：2010-12-15
申请人： Shunpei YAMAZAKI , Yasuyuki ARAI , Ikuko KAWAMATA
发明人： Shunpei YAMAZAKI , Yasuyuki ARAI , Ikuko KAWAMATA
IPC分类号： H01L21/336
CPC分类号： H01L27/11546 , H01L27/0207 , H01L27/105 , H01L27/115 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11526 , H01L27/1255 , H01L29/66825 , H01L29/7881
摘要： In order to form a plurality of semiconductor elements over an insulating surface, in one continuous semiconductor layer, an element region serving as a semiconductor element and an element isolation region having a function to electrically isolate element regions from each other by repetition of PN junctions. The element isolation region is formed by selective addition of an impurity element of at least one or more kinds of oxygen, nitrogen, and carbon and an impurity element that imparts an opposite conductivity type to that of the adjacent element region in order to electrically isolate elements from each other in one continuous semiconductor layer.
摘要翻译：为了在绝缘表面上形成多个半导体元件，在一个连续半导体层中，用作半导体元件的元件区域和具有通过重复PN结将元件区域彼此电隔离的功能的元件隔离区域。通过选择性地添加至少一种或多种氧，氮和碳的杂质元素和赋予与相邻元件区相反的导电类型的杂质元素来形成元件隔离区域，以便电隔离元件在一个连续的半导体层中彼此相交。

4. 发明申请

US20120298990A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120298990A1
公开(公告)日：2012-11-29
申请号：US13567451
申请日：2012-08-06
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA , Ikuko KAWAMATA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA , Ikuko KAWAMATA
IPC分类号： H01L29/12
CPC分类号： H01L27/1251 , G02F1/13454 , G02F2201/40 , G02F2202/10 , H01L27/1225 , H01L27/1233
摘要： An object is to increase an aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over one substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using metal and a channel layer is formed of an oxide semiconductor, and a driver circuit wiring formed using metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode layer and a drain electrode layer are formed using an oxide conductor and a semiconductor layer is formed of an oxide semiconductor, and a display portion wiring formed using an oxide conductor.
摘要翻译：目的是提高半导体器件的开口率。半导体器件包括驱动器电路部分和在一个衬底上的显示部分（也称为像素部分）。驱动器电路部分包括用于驱动电路的沟道蚀刻薄膜晶体管，其中使用金属形成源电极和漏电极，并且沟道层由氧化物半导体形成，并且使用金属形成驱动电路布线。显示部分包括用于像素的沟道保护薄膜晶体管，其中使用氧化物导体形成源极电极层和漏极电极层，并且半导体层由氧化物半导体形成;以及显示部分布线，其使用氧化物导体。

5. 发明申请

US20110012105A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110012105A1
公开(公告)日：2011-01-20
申请号：US12835117
申请日：2010-07-13
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA , Ikuko KAWAMATA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA , Ikuko KAWAMATA
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L27/1251 , G02F1/13454 , G02F2201/40 , G02F2202/10 , H01L27/1225 , H01L27/1233
摘要： An object is to increase an aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over one substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using metal and a channel layer is formed of an oxide semiconductor, and a driver circuit wiring formed using metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode layer and a drain electrode layer are formed using an oxide conductor and a semiconductor layer is formed of an oxide semiconductor, and a display portion wiring formed using an oxide conductor.
摘要翻译：目的是提高半导体器件的开口率。半导体器件包括驱动器电路部分和在一个衬底上的显示部分（也称为像素部分）。驱动器电路部分包括用于驱动电路的沟道蚀刻薄膜晶体管，其中使用金属形成源电极和漏电极，并且沟道层由氧化物半导体形成，以及使用金属形成的驱动电路布线。显示部分包括用于像素的沟道保护薄膜晶体管，其中使用氧化物导体形成源极电极层和漏极电极层，并且半导体层由氧化物半导体形成;以及显示部分布线，其使用氧化物导体。

6. 发明申请

US20120045894A1 Method for Manufacturing Display Device 有权
标题翻译：显示设备制造方法
公开(公告)号：US20120045894A1
公开(公告)日：2012-02-23
申请号：US13284584
申请日：2011-10-28
申请人： Shunpei YAMAZAKI , Hironobu SHOJI , Ikuko KAWAMATA
发明人： Shunpei YAMAZAKI , Hironobu SHOJI , Ikuko KAWAMATA
IPC分类号： H01L21/283
CPC分类号： H01L27/1214 , H01L21/31105 , H01L27/124 , H01L27/1285 , H01L27/1288 , H01L27/1292 , Y02P80/30
摘要： When a mask layer is formed, a first liquid composition containing a mask-layer-forming material is applied on an outer side of a pattern that is desired to be formed (corresponding to a contour or an edge portion of a pattern) to form a first mask layer having a frame shape. A second liquid composition containing a mask-layer-forming material is applied so as to fill a space inside the first mask layer having a frame shape to form a second mask layer. The first mask layer and the second mask layer are formed to be in contact with each other, and the first mask layer is formed to surround the second mask layer. Therefore, the first mask layer and the second mask layer can be used as one continuous mask layer.
摘要翻译：当形成掩模层时，将含有掩模层形成材料的第一液体组合物施加在期望形成的图案的外侧（对应于图案的轮廓或边缘部分），以形成第一掩模层具有框架形状。涂布含有掩模层形成材料的第二液体组合物，以填充具有框架形状的第一掩模层内的空间，以形成第二掩模层。第一掩模层和第二掩模层形成为彼此接触，并且第一掩模层形成为围绕第二掩模层。因此，第一掩模层和第二掩模层可以用作一个连续掩模层。

7. 发明申请

US20080203477A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080203477A1
公开(公告)日：2008-08-28
申请号：US12027815
申请日：2008-02-07
申请人： Shunpei YAMAZAKI , Ikuko KAWAMATA , Yasuyuki ARAI
发明人： Shunpei YAMAZAKI , Ikuko KAWAMATA , Yasuyuki ARAI
IPC分类号： H01L29/786
CPC分类号： H01L27/1233 , H01L27/105 , H01L27/11526 , H01L27/11534 , H01L27/11546 , H01L27/1203 , H01L27/1214 , H01L27/1237 , H01L29/66825 , H01L29/7881
摘要： Plural kinds of thin film transistors having different film thicknesses of semiconductor layers are provided over a substrate having an insulating surface. A channel formation region of semiconductor layer in a thin film transistor for which high speed operation is required is made thinner than a channel formation region of a semiconductor layer of a thin film transistor for which high withstand voltage is required. A gate insulating layer of the thin film transistor for which high speed operation is required may be thinner than a gate insulating layer of the thin film transistor for which high withstand voltage is required.
摘要翻译：在具有绝缘表面的基板上设置具有不同膜厚的半导体层的多种薄膜晶体管。要求高速运行的薄膜晶体管中的半导体层的沟道形成区域比需要高耐压的薄膜晶体管的半导体层的沟道形成区域薄。需要高速运行的薄膜晶体管的栅极绝缘层可以比要求高耐压的薄膜晶体管的栅极绝缘层更薄。

8. 发明申请

US20080179597A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20080179597A1
公开(公告)日：2008-07-31
申请号：US12013796
申请日：2008-01-14
申请人： Shunpei YAMAZAKI , Ikuko KAWAMATA , Yasuyuki ARAI
发明人： Shunpei YAMAZAKI , Ikuko KAWAMATA , Yasuyuki ARAI
IPC分类号： H01L33/00
CPC分类号： H01L27/12 , G02F1/1345 , G02F1/13454 , H01L27/1233 , H01L29/78621
摘要： It is an object to provide a display device including a thin film transistor which can operate at high speed and is driven at a low voltage in a drive circuit region, and a thin film transistor having high voltage-resistance and high reliability in a pixel region. Accordingly, it is an object to provide a high reliable display device which consumes less power. A display device including a pixel region and a drive circuit region over a substrate having an insulating surface is provided. A thin film transistor is provided in each of the pixel region and the drive circuit region. A channel formation region in a semiconductor layer of the thin film transistor provided in the drive circuit region is formed to be locally thin, and the thickness of the channel formation region is smaller than that in the pixel region.
摘要翻译：本发明的目的是提供一种显示装置，其包括可以在驱动电路区域中以高速操作并以低电压驱动的薄膜晶体管，以及在像素区域中具有高电压和高可靠性的薄膜晶体管。因此，本发明的目的是提供一种消耗较少功率的高可靠性显示装置。提供一种显示装置，其包括具有绝缘表面的基板上的像素区域和驱动电路区域。在像素区域和驱动电路区域的每一个中设置薄膜晶体管。设置在驱动电路区域中的薄膜晶体管的半导体层中的沟道形成区域局部变薄，并且沟道形成区域的厚度小于像素区域中的沟道形成区域。

9. 发明申请

US20110017995A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110017995A1
公开(公告)日：2011-01-27
申请号：US12839519
申请日：2010-07-20
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA , Ikuko KAWAMATA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA , Ikuko KAWAMATA
IPC分类号： H01L27/12 , H01L21/84 , H01L29/786
CPC分类号： H01L27/1225 , H01L27/124
摘要： An object is to increase the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using a metal and a channel layer is formed using an oxide semiconductor, and a driver circuit wiring formed using a metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode and a drain electrode are formed using an oxide conductor and a semiconductor layer is formed using an oxide semiconductor, and a display portion wiring formed using an oxide conductor. The thin film transistors provided in the semiconductor device are formed with a resist mask formed using a multi-tone mask.
摘要翻译：目的是提高半导体器件的开口率。半导体器件包括驱动器电路部分和在同一衬底上的显示部分（也称为像素部分）。驱动器电路部分包括用于驱动电路的沟道蚀刻薄膜晶体管，其中使用金属形成源电极和漏电极，并且使用氧化物半导体形成沟道层，以及使用金属。显示部分包括用于像素的沟道保护薄膜晶体管，其中使用氧化物导体形成源电极和漏电极，并且使用氧化物半导体形成半导体层，以及使用氧化物导体形成的显示部分布线。设置在半导体器件中的薄膜晶体管形成有使用多色调掩模形成的抗蚀剂掩模。

10. 发明申请

US20100311222A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100311222A1
公开(公告)日：2010-12-09
申请号：US12858525
申请日：2010-08-18
申请人： Shunpei YAMAZAKI , Ikuko KAWAMATA , Yasuyuki ARAI
发明人： Shunpei YAMAZAKI , Ikuko KAWAMATA , Yasuyuki ARAI
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , G11C16/0416 , G11C16/0433 , G11C16/0483 , H01L21/84 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/1203
摘要： When single crystal semiconductor layers are transposed from a single crystal semiconductor substrate (a bond wafer), the single crystal semiconductor substrate is etched selectively (this step is also referred to as groove processing), and a plurality of single crystal semiconductor layers, which are being divided in size of manufactured semiconductor elements, are transposed to a different substrate (a base substrate). Thus, a plurality of island-shaped single crystal semiconductor layers (SOI layers) can be formed over the base substrate. Further, etching is performed on the single crystal semiconductor layers formed over the base substrate, and the shapes of the SOI layers are controlled precisely by being processed and modified.
摘要翻译：当单晶半导体层从单晶半导体衬底（接合晶片）转置时，选择性地蚀刻单晶半导体衬底（该步骤也称为沟槽处理），并且多个单晶半导体层是被分割成制造的半导体元件的尺寸，被转置到不同的基板（基底）。因此，可以在基底基板上形成多个岛状单晶半导体层（SOI层）。此外，对形成在基底基板上的单晶半导体层进行蚀刻，并且通过加工和改进来精确地控制SOI层的形状。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式