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1. 发明申请

US20110092013A1 Method Of Manufacturing Photoelectric Conversion Device 有权
标题翻译：制造光电转换装置的方法
公开(公告)号：US20110092013A1
公开(公告)日：2011-04-21
申请号：US12977213
申请日：2010-12-23
申请人： Fumito ISAKA , Sho KATO , Koji DAIRIKI
发明人： Fumito ISAKA , Sho KATO , Koji DAIRIKI
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/02168 , H01L31/022433 , H01L31/03762 , H01L31/0725 , H01L31/1864 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.
摘要翻译：在单晶半导体衬底的一个表面的深度小于1000nm的区域形成脆性层，在一个表面侧形成第一杂质半导体层和第一电极。在接合第一电极和支撑衬底之后，使用脆弱层或附近分离单晶半导体衬底作为分离平面，从而在支撑衬底上形成第一单晶半导体层。在第一单晶半导体层上形成非晶半导体层，通过对非晶半导体层的固相生长进行热处理形成第二单晶半导体层。在第二单晶半导体层上形成具有与第一杂质半导体层的导电类型相反的导电类型的第二杂质半导体层和第二电极。

2. 发明申请

US20120184064A1 METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 失效
标题翻译：制造光电转换器件的方法
公开(公告)号：US20120184064A1
公开(公告)日：2012-07-19
申请号：US13426655
申请日：2012-03-22
申请人： Fumito ISAKA , Sho KATO , Koji DAIRIKI
发明人： Fumito ISAKA , Sho KATO , Koji DAIRIKI
IPC分类号： H01L31/20
CPC分类号： H01L31/1804 , H01L31/02168 , H01L31/022433 , H01L31/03762 , H01L31/0725 , H01L31/1864 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.
摘要翻译：在单晶半导体衬底的一个表面的深度小于1000nm的区域形成脆性层，在一个表面侧形成第一杂质半导体层和第一电极。在接合第一电极和支撑衬底之后，使用脆弱层或附近分离单晶半导体衬底作为分离平面，从而在支撑衬底上形成第一单晶半导体层。在第一单晶半导体层上形成非晶半导体层，通过对非晶半导体层的固相生长进行热处理形成第二单晶半导体层。在第二单晶半导体层上形成具有与第一杂质半导体层的导电类型相反的导电类型的第二杂质半导体层和第二电极。

3. 发明申请

US20100291755A1 MANUFACTURING METHOD OF SOI SUBSTRATE 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US20100291755A1
公开(公告)日：2010-11-18
申请号：US12844856
申请日：2010-07-28
申请人： Fumito ISAKA , Sho KATO , Kosei NEI , Ryu KOMATSU , Tatsuya MIZOI , Akihisa SHIMOMURA
发明人： Fumito ISAKA , Sho KATO , Kosei NEI , Ryu KOMATSU , Tatsuya MIZOI , Akihisa SHIMOMURA
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： An SOI substrate is manufactured by a method in which a first insulating film is formed over a first substrate over which a plurality of first single crystal semiconductor films is formed; the first insulating film is planarized; heat treatment is performed on a single crystal semiconductor substrate attached to the first insulating film; a second single crystal semiconductor film is formed; a third single crystal semiconductor film is formed using the first single crystal semiconductor films and the second single crystal semiconductor films as seed layers; a fragile layer is formed by introducing ions into the third single crystal semiconductor film; a second insulating film is formed over the third single crystal semiconductor film; heat treatment is performed on a second substrate superposed on the second insulating film; and a part of the third single crystal semiconductor film is fixed to the second substrate.
摘要翻译：通过在形成有多个第一单晶半导体膜的第一基板上形成第一绝缘膜的方法制造SOI衬底; 第一绝缘膜被平坦化; 对附着在第一绝缘膜上的单晶半导体衬底进行热处理; 形成第二单晶半导体膜; 使用第一单晶半导体膜和第二单晶半导体膜作为晶种层形成第三单晶半导体膜; 通过将离子引入第三单晶半导体膜中形成脆性层; 在第三单晶半导体膜上形成第二绝缘膜; 在叠置在第二绝缘膜上的第二基板上进行热处理; 并且第三单晶半导体膜的一部分固定到第二基板。

4. 发明申请

US20090305469A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090305469A1
公开(公告)日：2009-12-10
申请号：US12467454
申请日：2009-05-18
申请人： Sho KATO , Satoshi TORIUMI , Fumito ISAKA , Hideto OHNUMA
发明人： Sho KATO , Satoshi TORIUMI , Fumito ISAKA , Hideto OHNUMA
IPC分类号： H01L21/762 , H01L21/336
CPC分类号： H01L21/84 , H01L21/76251
摘要： A stack including at least an insulating layer, a first electrode, and a first impurity semiconductor layer is provided over a supporting substrate; a first semiconductor layer to which an impurity element imparting one conductivity type is added is formed over the first impurity semiconductor layer; a second semiconductor layer to which an impurity element imparting the one conductivity type is added is formed over the first semiconductor layer under a condition different from that of the first semiconductor layer; crystallinity of the first semiconductor layer and crystallinity of the second semiconductor layer are improved by a solid-phase growth method to form a second impurity semiconductor layer; an impurity element imparting the one conductivity type and an impurity element imparting a conductivity type different from the one conductivity type are added to the second impurity semiconductor layer; and a gate electrode layer is formed via a gate insulating layer.
摘要翻译：至少包括绝缘层，第一电极和第一杂质半导体层的叠层设置在支撑基板上; 在所述第一杂质半导体层上形成添加有赋予一种导电类型的杂质元素的第一半导体层; 在与第一半导体层不同的条件下，在第一半导体层上形成添加有赋予一种导电型的杂质元素的第二半导体层; 通过固相生长法提高第一半导体层的结晶度和第二半导体层的结晶度，形成第二杂质半导体层; 赋予一种导电类型的杂质元素和赋予不同于一种导电类型的导电类型的杂质元素添加到第二杂质半导体层; 并且经由栅极绝缘层形成栅极电极层。

5. 发明申请

US20110318864A1 METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：制造光电转换装置的方法
公开(公告)号：US20110318864A1
公开(公告)日：2011-12-29
申请号：US13222423
申请日：2011-08-31
申请人： Fumito ISAKA , Sho KATO , Junpei MOMO
发明人： Fumito ISAKA , Sho KATO , Junpei MOMO
IPC分类号： H01L31/18
CPC分类号： H01L31/022425 , H01L31/0236 , H01L31/02363 , H01L31/03685 , H01L31/03762 , H01L31/068 , H01L31/1892 , Y02E10/545 , Y02E10/547 , Y02E10/548
摘要： The purpose is manufacturing a photoelectric conversion device with excellent photoelectric conversion characteristics typified by a solar cell with effective use of a silicon material. A single crystal silicon layer is irradiated with a laser beam through an optical modulator to form an uneven structure on a surface thereof. The single crystal silicon layer is obtained in the following manner; an embrittlement layer is formed in a single crystal silicon substrate; one surface of a supporting substrate and one surface of an insulating layer formed over the single crystal silicon substrate are disposed to be in contact and bonded; heat treatment is performed; and the single crystal silicon layer is formed over the supporting substrate by separating part of the single crystal silicon substrate fixed to the supporting substrate along the embrittlement layer or a periphery of the embrittlement layer. Then, irradiation with a laser beam is performed on a separation surface of the single crystal silicon layer through an optical modulator which modulates light intensity regularly, and unevenness is formed on the surface. Due to the unevenness, reflection of incident light is reduced and absorptance with respect to light is improved, therefore, photoelectric conversion efficiency of the photoelectric conversion device is improved.
摘要翻译：目的是制造具有优异的光电转换特性的光电转换装置，其特征在于以太阳能电池为代表，有效利用硅材料。通过光学调制器用激光束照射单晶硅层，以在其表面上形成不均匀的结构。以下列方式获得单晶硅层：在单晶硅衬底中形成脆化层; 支撑基板的一个表面和形成在单晶硅基板上的绝缘层的一个表面被设置成接触和接合; 进行热处理; 并且通过沿着脆化层或脆化层的周边分离固定到支撑基板上的一部分单晶硅基板，在支撑基板上形成单晶硅层。然后，通过光调制器在单晶硅层的分离面上进行激光束的照射，光调制器规则地调制光强度，并且在表面上形成不均匀性。由于不均匀性，入射光的反射降低，相对于光的吸收性提高，光电转换装置的光电转换效率提高。

6. 发明申请

US20100275990A1 PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20100275990A1
公开(公告)日：2010-11-04
申请号：US12768351
申请日：2010-04-27
申请人： Akihisa SHIMOMURA , Fumito ISAKA , Sho KATO
发明人： Akihisa SHIMOMURA , Fumito ISAKA , Sho KATO
IPC分类号： H01L31/00 , H01L21/78 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/028 , H01L31/03682 , H01L31/068 , H01L31/0682 , H01L31/075 , H01L31/1864 , H01L31/1892 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： To provide a novel photoelectric conversion device and a manufacturing method thereof. Over a base substrate having a light-transmitting property, a light-transmitting insulating layer and a single crystal semiconductor layer over the insulating layer are formed. A plurality of first impurity semiconductor layers each having one conductivity type is provided in a band shape in a surface layer of the single crystal semiconductor layer or on a surface of the single crystal semiconductor layer, and a plurality of second impurity semiconductor layers each having a conductivity type which is opposite to the one conductivity type is provided in a band shape in such a manner that the first impurity semiconductor layers and the second impurity semiconductor layers are alternately provided and do not overlap with each other. First electrodes in contact with the first impurity semiconductor layers and second electrodes in contact with the second impurity semiconductor layers are provided, and a back contact cell is formed, whereby a photoelectric conversion device provided with a photo acceptance surface on the base substrate side is formed.
摘要翻译：提供一种新颖的光电转换装置及其制造方法。在绝缘层上方形成具有透光性的基底基板，透光绝缘层和单晶半导体层。在单晶半导体层的表面层或单晶半导体层的表面上，具有一个导电型的多个第一杂质半导体层被设置成带状，以及多个第二杂质半导体层，以与第一杂质半导体层和第二杂质半导体层交替地设置并且彼此不重叠的带状形式提供与一种导电类型相反的导电类型。提供与第一杂质半导体层和与第二杂质半导体层接触的第二电极接触的第一电极，形成背接触电池，由此形成在基底侧上设置有光接收表面的光电转换装置。

7. 发明申请

US20090197392A1 MANUFACTURING METHOD OF SOI SUBSTRATE 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US20090197392A1
公开(公告)日：2009-08-06
申请号：US12360419
申请日：2009-01-27
申请人： Fumito ISAKA , Sho KATO , Kosei NEI , Ryu KOMATSU , Tatsuya MIZOI , Akihisa SHIMOMURA
发明人： Fumito ISAKA , Sho KATO , Kosei NEI , Ryu KOMATSU , Tatsuya MIZOI , Akihisa SHIMOMURA
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： An SOI substrate is manufactured by a method in which a first insulating film is formed over a first substrate over which a plurality of first single crystal semiconductor films is formed; the first insulating film is planarized; heat treatment is performed on a single crystal semiconductor substrate attached to the first insulating film; a second single crystal semiconductor film is formed; a third single crystal semiconductor film is formed using the first single crystal semiconductor films and the second single crystal semiconductor films as seed layers; a fragile layer is formed by introducing ions into the third single crystal semiconductor film; a second insulating film is formed over the third single crystal semiconductor film; heat treatment is performed on a second substrate superposed on the second insulating film; and a part of the third single crystal semiconductor film is fixed to the second substrate.
摘要翻译：通过在形成有多个第一单晶半导体膜的第一基板上形成第一绝缘膜的方法制造SOI衬底; 第一绝缘膜被平坦化; 对附着在第一绝缘膜上的单晶半导体衬底进行热处理; 形成第二单晶半导体膜; 使用第一单晶半导体膜和第二单晶半导体膜作为晶种层形成第三单晶半导体膜; 通过将离子引入第三单晶半导体膜中形成脆性层; 在第三单晶半导体膜上形成第二绝缘膜; 在叠置在第二绝缘膜上的第二基板上进行热处理; 并且第三单晶半导体膜的一部分固定到第二基板。

8. 发明申请

US20110129969A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110129969A1
公开(公告)日：2011-06-02
申请号：US13024360
申请日：2011-02-10
申请人： Sho KATO , Satoshi TORIUMI , Fumito ISAKA , Hideto OHNUMA
发明人： Sho KATO , Satoshi TORIUMI , Fumito ISAKA , Hideto OHNUMA
IPC分类号： H01L21/336
CPC分类号： H01L21/84 , H01L21/76251
摘要： A stack including at least an insulating layer, a first electrode, and a first impurity semiconductor layer is provided over a supporting substrate; a first semiconductor layer to which an impurity element imparting one conductivity type is added is formed over the first impurity semiconductor layer; a second semiconductor layer to which an impurity element imparting the one conductivity type is added is formed over the first semiconductor layer under a condition different from that of the first semiconductor layer; crystallinity of the first semiconductor layer and crystallinity of the second semiconductor layer are improved by a solid-phase growth method to form a second impurity semiconductor layer; an impurity element imparting the one conductivity type and an impurity element imparting a conductivity type different from the one conductivity type are added to the second impurity semiconductor layer; and a gate electrode layer is formed via a gate insulating layer.
摘要翻译：至少包括绝缘层，第一电极和第一杂质半导体层的叠层设置在支撑基板上; 在所述第一杂质半导体层上形成添加有赋予一种导电类型的杂质元素的第一半导体层; 在与第一半导体层不同的条件下，在第一半导体层上形成添加有赋予一种导电型的杂质元素的第二半导体层; 通过固相生长法提高第一半导体层的结晶度和第二半导体层的结晶度，形成第二杂质半导体层; 赋予一种导电类型的杂质元素和赋予不同于一种导电类型的导电类型的杂质元素添加到第二杂质半导体层; 并且经由栅极绝缘层形成栅极电极层。

9. 发明申请

US20100129948A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体基板的方法和制造半导体器件的方法
公开(公告)号：US20100129948A1
公开(公告)日：2010-05-27
申请号：US12621541
申请日：2009-11-19
申请人： Fumito ISAKA , Sho KATO , Yu ARITA , Akihisa SHIMOMURA
发明人： Fumito ISAKA , Sho KATO , Yu ARITA , Akihisa SHIMOMURA
IPC分类号： H01L21/18 , H01L31/18
CPC分类号： H01L21/76254 , H01L31/028 , H01L31/075 , H01L31/1804 , H01L31/1896 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： An object is to manufacture a semiconductor substrate having a single crystal semiconductor layer with favorable characteristics, without requiring CMP treatment and/or heat treatment at high temperature. In addition, another object is to improve productivity of semiconductor substrates. Vapor-phase epitaxial growth is performed by using a first single crystal semiconductor layer provided over a first substrate as a seed layer, whereby a second single crystal semiconductor layer is formed over the first single crystal semiconductor layer, and separation is performed at an interface of the both layers. Thus, the second single crystal semiconductor layer is transferred to the second substrate to provide a semiconductor substrate, and the semiconductor substrate is reused by performing laser light treatment on the seed layer.
摘要翻译：本发明的目的是制造具有良好特性的单晶半导体层的半导体衬底，而不需要在高温下进行CMP处理和/或热处理。此外，另一个目的是提高半导体衬底的生产率。通过使用设置在第一基板上的第一单晶半导体层作为晶种层来进行气相外延生长，由此在第一单晶半导体层上形成第二单晶半导体层，并且在第一单晶半导体层的界面上进行分离两层。因此，将第二单晶半导体层转移到第二基板以提供半导体衬底，并且通过对籽晶层进行激光处理来重新使用半导体衬底。

10. 发明申请

US20090269906A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE 有权
标题翻译：制造半导体基板的方法
公开(公告)号：US20090269906A1
公开(公告)日：2009-10-29
申请号：US12426305
申请日：2009-04-20
申请人： Sho KATO , Satoshi TORIUMI , Fumito ISAKA
发明人： Sho KATO , Satoshi TORIUMI , Fumito ISAKA
IPC分类号： H01L21/762 , H01L21/20
CPC分类号： H01L21/02532 , H01L21/0262 , H01L21/02667 , H01L21/02686 , H01L21/76254
摘要： A semiconductor substrate is provided by a method suitable for mass production. Further, a semiconductor substrate having an excellent characteristic with effective use of resources is provided. A single crystal semiconductor substrate is irradiated with ions to form a damaged region in the single crystal semiconductor substrate; an insulating layer is formed over the single crystal semiconductor substrate; the insulating layer and a supporting substrate are bonded to each other; a first single crystal semiconductor layer is formed over the supporting substrate by partially separating the single crystal semiconductor substrate at the damaged region; a first semiconductor layer is formed over the first single crystal semiconductor layer; a second semiconductor layer is formed over the first semiconductor layer with a different condition from that used for forming the first semiconductor layer; a second single crystal semiconductor layer is formed by improving crystallinity of the first and the second semiconductor layers.
摘要翻译：通过适合于批量生产的方法提供半导体衬底。此外，提供了具有优异特性的具有有效利用资源的半导体衬底。单晶半导体衬底被照射以在单晶半导体衬底中形成受损区域; 在单晶半导体衬底上形成绝缘层; 绝缘层和支撑基板彼此接合; 通过在损伤区域部分分离单晶半导体衬底，在支撑衬底上形成第一单晶半导体层; 在所述第一单晶半导体层上形成第一半导体层; 在与第一半导体层的形成不同的条件下，在第一半导体层上形成第二半导体层; 通过提高第一和第二半导体层的结晶度来形成第二单晶半导体层。

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