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    • 3. 发明授权
    • Control apparatus for rotating machine
    • 旋转机控制装置
    • US08816622B2
    • 2014-08-26
    • US13809215
    • 2011-07-26
    • Sho KatoHisanori YamasakiKeita HatanakaHidetoshi KitanakaYoshinori Yamashita
    • Sho KatoHisanori YamasakiKeita HatanakaHidetoshi KitanakaYoshinori Yamashita
    • H02P6/20
    • H02P6/205H02P21/18H02P21/26H02P21/34H02P2203/05H02P2203/09
    • A control apparatus for an AC rotating machine that can reliably and stably start up an AC rotating machine, particularly a synchronous motor using a permanent magnet, in position-sensorless vector control thereof, includes: a steady speed calculator that calculates, during steady state control of the AC rotating machine, a rotation angular frequency of the AC rotating machine based on an AC current and voltage commands; and a start-up speed calculator that calculates, during start-up control within a predetermined period after the AC rotating machine has been started up, the rotation angular frequency of the AC rotating machine based on the AC current and the voltage commands. The control apparatus corrects during the start-up control current commands so that the AC voltage amplitude of the voltage commands will be a constant value not more than the maximum output voltage of a power converter.
    • 一种用于在无位置传感器矢量控制中能够可靠且稳定地启动交流旋转机械,特别是使用永久磁铁的同步电动机的交流旋转机械的控制装置包括:稳定速度计算器,其在稳态控制期间计算 交流旋转机的旋转角频率基于交流电流和电压指令; 以及起动速度计算器,其根据所述交流电流和所述电压指令,在所述交流旋转机器启动之后的预定时间段内的启动控制期间计算所述交流旋转机器的旋转角频率。 控制装置在启动控制电流指令期间进行校正,使得电压指令的AC电压振幅将成为不大于功率转换器的最大输出电压的恒定值。
    • 5. 发明申请
    • CONTROL APPARATUS FOR ROTATING MACHINE
    • 旋转机控制装置
    • US20130106329A1
    • 2013-05-02
    • US13809215
    • 2011-07-26
    • Sho KatoHisanori YamasakiKeita HatanakaHidetoshi KitanakaYoshinori Yamashita
    • Sho KatoHisanori YamasakiKeita HatanakaHidetoshi KitanakaYoshinori Yamashita
    • H02P6/20
    • H02P6/205H02P21/18H02P21/26H02P21/34H02P2203/05H02P2203/09
    • A control apparatus for an AC rotating machine that can reliably and stably start up an AC rotating machine, particularly a synchronous motor using a permanent magnet, in position-sensorless vector control thereof, includes: a steady speed calculator that calculates, during steady state control of the AC rotating machine, a rotation angular frequency of the AC rotating machine based on an AC current and voltage commands; and a start-up speed calculator that calculates, during start-up control within a predetermined period after the AC rotating machine has been started up, the rotation angular frequency of the AC rotating machine based on the AC current and the voltage commands. The control apparatus corrects during the start-up control current commands so that the AC voltage amplitude of the voltage commands will be a constant value not more than the maximum output voltage of a power converter.
    • 一种用于在无位置传感器矢量控制中能够可靠且稳定地启动交流旋转机械,特别是使用永久磁铁的同步电动机的交流旋转机械的控制装置包括:稳定速度计算器,其在稳态控制期间计算 交流旋转机的旋转角频率基于交流电流和电压指令; 以及起动速度计算器,其根据所述交流电流和所述电压指令,在所述交流旋转机器启动之后的预定时间段内的启动控制期间计算所述交流旋转机器的旋转角频率。 控制装置在启动控制电流指令期间进行校正,使得电压指令的AC电压振幅将成为不大于功率转换器的最大输出电压的恒定值。
    • 6. 发明申请
    • METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE
    • 制造光电转换装置的方法
    • US20110318864A1
    • 2011-12-29
    • US13222423
    • 2011-08-31
    • Fumito ISAKASho KATOJunpei MOMO
    • Fumito ISAKASho KATOJunpei MOMO
    • H01L31/18
    • H01L31/022425H01L31/0236H01L31/02363H01L31/03685H01L31/03762H01L31/068H01L31/1892Y02E10/545Y02E10/547Y02E10/548
    • The purpose is manufacturing a photoelectric conversion device with excellent photoelectric conversion characteristics typified by a solar cell with effective use of a silicon material. A single crystal silicon layer is irradiated with a laser beam through an optical modulator to form an uneven structure on a surface thereof. The single crystal silicon layer is obtained in the following manner; an embrittlement layer is formed in a single crystal silicon substrate; one surface of a supporting substrate and one surface of an insulating layer formed over the single crystal silicon substrate are disposed to be in contact and bonded; heat treatment is performed; and the single crystal silicon layer is formed over the supporting substrate by separating part of the single crystal silicon substrate fixed to the supporting substrate along the embrittlement layer or a periphery of the embrittlement layer. Then, irradiation with a laser beam is performed on a separation surface of the single crystal silicon layer through an optical modulator which modulates light intensity regularly, and unevenness is formed on the surface. Due to the unevenness, reflection of incident light is reduced and absorptance with respect to light is improved, therefore, photoelectric conversion efficiency of the photoelectric conversion device is improved.
    • 目的是制造具有优异的光电转换特性的光电转换装置,其特征在于以太阳能电池为代表,有效利用硅材料。 通过光学调制器用激光束照射单晶硅层,以在其表面上形成不均匀的结构。 以下列方式获得单晶硅层: 在单晶硅衬底中形成脆化层; 支撑基板的一个表面和形成在单晶硅基板上的绝缘层的一个表面被设置成接触和接合; 进行热处理; 并且通过沿着脆化层或脆化层的周边分离固定到支撑基板上的一部分单晶硅基板,在支撑基板上形成单晶硅层。 然后,通过光调制器在单晶硅层的分离面上进行激光束的照射,光调制器规则地调制光强度,并且在表面上形成不均匀性。 由于不均匀性,入射光的反射降低,相对于光的吸收性提高,光电转换装置的光电转换效率提高。
    • 7. 发明申请
    • Method Of Manufacturing Photoelectric Conversion Device
    • 制造光电转换装置的方法
    • US20110092013A1
    • 2011-04-21
    • US12977213
    • 2010-12-23
    • Fumito ISAKASho KATOKoji DAIRIKI
    • Fumito ISAKASho KATOKoji DAIRIKI
    • H01L31/18
    • H01L31/1804H01L31/02168H01L31/022433H01L31/03762H01L31/0725H01L31/1864H01L31/202Y02E10/547Y02E10/548Y02P70/521
    • A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.
    • 在单晶半导体衬底的一个表面的深度小于1000nm的区域形成脆性层,在一个表面侧形成第一杂质半导体层和第一电极。 在接合第一电极和支撑衬底之后,使用脆弱层或附近分离单晶半导体衬底作为分离平面,从而在支撑衬底上形成第一单晶半导体层。 在第一单晶半导体层上形成非晶半导体层,通过对非晶半导体层的固相生长进行热处理形成第二单晶半导体层。 在第二单晶半导体层上形成具有与第一杂质半导体层的导电类型相反的导电类型的第二杂质半导体层和第二电极。
    • 8. 发明授权
    • Manufacturing method of SOI substrate
    • SOI衬底的制造方法
    • US07767547B2
    • 2010-08-03
    • US12360419
    • 2009-01-27
    • Fumito IsakaSho KatoKosei NeiRyu KomatsuTatsuya MizoiAkihisa Shimomura
    • Fumito IsakaSho KatoKosei NeiRyu KomatsuTatsuya MizoiAkihisa Shimomura
    • H01L21/46
    • H01L21/76254
    • An SOI substrate is manufactured by a method in which a first insulating film is formed over a first substrate over which a plurality of first single crystal semiconductor films is formed; the first insulating film is planarized; heat treatment is performed on a single crystal semiconductor substrate attached to the first insulating film; a second single crystal semiconductor film is formed; a third single crystal semiconductor film is formed using the first single crystal semiconductor films and the second single crystal semiconductor films as seed layers; a fragile layer is formed by introducing ions into the third single crystal semiconductor film; a second insulating film is formed over the third single crystal semiconductor film; heat treatment is performed on a second substrate superposed on the second insulating film; and a part of the third single crystal semiconductor film is fixed to the second substrate.
    • 通过在形成有多个第一单晶半导体膜的第一基板上形成第一绝缘膜的方法制造SOI衬底; 第一绝缘膜被平坦化; 对附着在第一绝缘膜上的单晶半导体衬底进行热处理; 形成第二单晶半导体膜; 使用第一单晶半导体膜和第二单晶半导体膜作为晶种层形成第三单晶半导体膜; 通过将离子引入第三单晶半导体膜中形成脆性层; 在第三单晶半导体膜上形成第二绝缘膜; 在叠置在第二绝缘膜上的第二基板上进行热处理; 并且第三单晶半导体膜的一部分固定到第二基板。
    • 9. 发明授权
    • Control device for AC rotating machine
    • 交流旋转机控制装置
    • US08604731B2
    • 2013-12-10
    • US13202639
    • 2009-03-11
    • Sho KatoYoshihiko KimparaTakahiko KobayashiSatoru Terashima
    • Sho KatoYoshihiko KimparaTakahiko KobayashiSatoru Terashima
    • H02H7/09
    • H02P21/08H02P21/22H02P21/24H02P31/00
    • A control device for an AC rotating machine having a current limiting function of protecting the AC rotating machine and a driving unit such as an inverter from over-current, in which the control device has the reliable current limiting function in driving the AC rotating machine with known or unknown electrical constant. In the control device, a frequency correction value arithmetic unit has an amplification gain computing element for computing an amplification gain based on an electrical constant of the AC rotating machine and an amplifier for computing a frequency correction arithmetic value based on the amplification gain computed by the amplification gain computing element and the current of the AC rotating machine, in which the frequency correction arithmetic value is outputted as a frequency correction value in a predetermined running state of the AC rotating machine.
    • 一种用于交流旋转机械的控制装置,具有保护交流旋转机器的电流限制功能和过电流的逆变器等驱动单元,其中控制装置在驱动交流旋转机器时具有可靠的限流功能, 已知或未知的电常数。 在控制装置中,频率校正值运算单元具有用于基于AC旋转机器的电常数来计算放大增益的放大增益计算单元和用于基于由所述AC旋转机计算出的放大增益来计算频率校正算术值的放大器 放大增益计算元件和AC旋转机的电流,其中频率校正算术值作为频率校正值输出到AC旋转机器的预定运行状态。