专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2010145765A3 SOLAR CELL AND METHOD FOR THE PRODUCTION THEREOF 审中-公开
标题翻译：太阳能电池和方法及其
公开(公告)号：WO2010145765A3
公开(公告)日：2011-10-27
申请号：PCT/EP2010003396
申请日：2010-06-07
申请人： FRAUNHOFER GES FORSCHUNG , ALBERT LUDWIG UNI FREIBURG , BLAESI BENEDIKT , PETERS MARIUS , GOLDSCHMIDT JAN CHRISTOPH , HERMLE MARTIN , HAUSER HUBERT , BERGER PAULINE
发明人： BLAESI BENEDIKT , PETERS MARIUS , GOLDSCHMIDT JAN CHRISTOPH , HERMLE MARTIN , HAUSER HUBERT , BERGER PAULINE
IPC分类号： H01L31/0236 , H01L31/052
CPC分类号： H01L31/0236 , H01L31/02363 , H01L31/056 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a solar cell, comprising a silicon substrate (1), a front side (2) designed for coupling light, and a rear side (3). It is essential that the front side, at least in a partial region, comprises a front side texture, which along a spatial direction A is periodic, the period length being greater than 1 µm, and that the rear side, at least in a partial region, comprises a rear side texture, which along a spatial direction B is periodic, the period length being smaller than 1 µm. The spatial direction A is disposed at an 80° to 100º angle to the spatial direction B.
摘要翻译：本发明涉及一种包括硅衬底的太阳能电池（1），一个训练有素的用于将光耦合前（2）和背面（3）。至关重要的是，所述前部具有至少在其前侧的纹理的部分区域，也就是沿一个空间方向上周期性阿具有周期长度大于1微米，并至少在一个背面网纹的部分区域的背面沿一个空间方向B是周期性的具有小于1的周期长度大微米，其中所述空间方向的一角度80°和100°度之间的方向在空间B.

2. 发明申请

WO2010145765A2 SOLAR CELL AND METHOD FOR THE PRODUCTION THEREOF 审中-公开
标题翻译：太阳能电池和方法及其
公开(公告)号：WO2010145765A2
公开(公告)日：2010-12-23
申请号：PCT/EP2010003396
申请日：2010-06-07
申请人： FRAUNHOFER GES FORSCHUNG , ALBERT LUDWIG UNI FREIBURG , BLAESI BENEDIKT , PETERS MARIUS , GOLDSCHMIDT JAN CHRISTOPH , HERMLE MARTIN , HAUSER HUBERT , BERGER PAULINE
发明人： BLAESI BENEDIKT , PETERS MARIUS , GOLDSCHMIDT JAN CHRISTOPH , HERMLE MARTIN , HAUSER HUBERT , BERGER PAULINE
IPC分类号： H01L31/0236
CPC分类号： H01L31/0236 , H01L31/02363 , H01L31/056 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a solar cell, comprising a silicon substrate (1), a front side (2) designed for coupling light, and a rear side (3). It is essential that the front side, at least in a partial region, comprises a front side texture, which along a spatial direction A is periodic, the period length being greater than 1 µm, and that the rear side, at least in a partial region, comprises a rear side texture, which along a spatial direction B is periodic, the period length being smaller than 1 µm. The spatial direction A is disposed at an 80° to 100º angle to the spatial direction B.
摘要翻译：本发明涉及一种包括硅衬底的太阳能电池（1），一个训练有素的用于将光耦合前（2）和背面（3）。至关重要的是，所述前部具有至少在其前侧的纹理的部分区域，也就是沿一个空间方向上周期性阿具有周期长度大于1微米，并至少在一个背面网纹的部分区域的背面沿一个空间方向B是周期性的具有小于1的周期长度大微米，其中所述空间方向的一角度80°和100°度之间的方向在空间B.

3. 发明申请

WO2011032672A2 SOLAR CELL 审中-公开
标题翻译：太阳能电池
公开(公告)号：WO2011032672A2
公开(公告)日：2011-03-24
申请号：PCT/EP2010005596
申请日：2010-09-13
申请人： FRAUNHOFER GES FORSCHUNG , UNIV ALBERT LUDWIGS FREIBURG , HERMLE MARTIN , HAUSER HUBERT , BERGER PAULINE , BLAESI BENEDIKT , PETERS MARIUS , GOLDSCHMIDT JAN CHRISTOPH
发明人： HERMLE MARTIN , HAUSER HUBERT , BERGER PAULINE , BLAESI BENEDIKT , PETERS MARIUS , GOLDSCHMIDT JAN CHRISTOPH
IPC分类号： H01L31/0236 , H01L31/075
CPC分类号： H01L31/0236 , H01L31/0547 , H01L31/056 , H01L31/075 , Y02E10/52 , Y02E10/548
摘要： The invention relates to a solar cell, comprising a silicon layer which has a dopant of a first dopant type, a front designed for the coupling in of light, and a rear, the silicon layer being a doped base layer, at least one textured layer and a metal layer being arranged on the rear of the silicon layer, optionally on additional intermediate layers, and the textured layer comprising a rear texture in at least a section thereof which rear texture is designed as an optical diffraction structure. It is essential that at least one textured intermediate structure (3, 23, 33) is arranged between the textured layer (2, 22, 32) and the metal layer (4, 24, 34), the metal layer (4, 24, 34) being connected to the textured layer (2, 22, 32) and/or to the base layer (1, 21, 31) in an electrically conducting manner. The textured intermediate structure (3, 23, 33) is substantially transparent at least in the wavelength range of 800 nm to 1100 nm and has a refractive index n smaller than the refractive index of the textured layer in at least this wavelength range. The refractive index of all layers arranged between the base layer (1, 21, 31) and the textured intermediate layer (3, 23, 33) deviates by not more than 30% relative to the refractive index of silicon and the layer which is arranged directly on the rear of the base layer (1, 21, 31) is a passivation layer which passivates the surface with respect to the recombination of minority charge carriers.
摘要翻译：本发明涉及一种包括具有第一掺杂类型的掺杂，硅层的太阳能电池的训练用于将光耦合前部和后部，其中，所述硅层是分别是掺杂的基极层，至少一个纹理层和设置在所述硅层的背面侧的金属层，任选对另外的中间层和至少在背面网纹，其被形成为光学衍射结构的局部区域中的纹理层。至关重要的是，纹理层（2,22，32）和金属层（4,24，34），至少一个纹理中间结构（3，23，33）之间设置，其特征在于，所述金属层（4,24，34）（带有纹理层2 ，22，32）和/或与基础层（1，21，31）被导电地连接，至少所述中间结构（3，23，33）的在所述波长范围内的纹理800纳米至1100纳米，这是基本上透明的并且至少具有折射率n小于纹理层的折射率的波长区域中，所有的基极层（1，21，31）和纹理中间结构（3，23，33）之间的折射率比硅的折射率和布置层由30％的最大偏离这直接在基材层的背面（1，21，31）被布置成该层，相对于表面少数载流子的再结合的钝化钝化ist.ep105750

4. 发明申请

WO2008052767A8 SOLAR CELL AND SOLAR CELL MODULE WITH IMPROVED REAR-SIDE ELECTRODES, AND PRODUCTION METHOD 审中-公开
标题翻译：具有改进的更换电极的太阳能电池和太阳能电池组件以及生产方法
公开(公告)号：WO2008052767A8
公开(公告)日：2008-07-31
申请号：PCT/EP2007009461
申请日：2007-10-31
申请人： FRAUNHOFER GES FORSCHUNG , SCHULTZ OLIVER , GLUNZ STEFAN , HERMLE MARTIN
发明人： SCHULTZ OLIVER , GLUNZ STEFAN , HERMLE MARTIN
IPC分类号： H01L31/0224 , H01L31/05
CPC分类号： H01L31/022441 , H01L31/0516 , Y02E10/50
摘要： The present invention relates to rear-side contact solar cells and solar cell modules produced therefrom which have a special electrode structure, and to a method for producing them. In this case, the electrodes via which the current of the rear-side contact cell is tapped off are isolated by an insulating layer from the finger contacts connected to the n-type and p-type semiconductor element of the solar cell. The method enables a significant simplification with respect to production methods described from the prior art, by spatially decoupling the structuring of the electrodes from the solar cell.
摘要翻译：本发明涉及背面接触太阳能电池和由其制成的太阳能电池组件，其具有特殊的电极结构及其制造方法。在这里，通过该背接触电池的电流被分接在电极上，从手指接触，这与太阳能电池的n型或p半导体元件在连接进行通信，通过绝缘层由绝缘层分隔开。该方法允许通过太阳能电池的电极的结构化的空间解耦来显着简化现有技术所描述的制造方法。

5. 发明申请

WO2011141139A2 METHOD FOR PRODUCING A SOLAR CELL THAT CAN BE CONTACTED ON ONE SIDE FROM A SILICON SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：为了制造方法片面接触太阳能电池由硅半导体衬底
公开(公告)号：WO2011141139A2
公开(公告)日：2011-11-17
申请号：PCT/EP2011002239
申请日：2011-05-05
申请人： FRAUNHOFER GES FORSCHUNG , HERMLE MARTIN , GRANEK FILIP , REICHEL CHRISTIAN
发明人： HERMLE MARTIN , GRANEK FILIP , REICHEL CHRISTIAN
IPC分类号： H01L31/18
CPC分类号： H01L31/022425 , H01L31/022441 , H01L31/0747 , Y02E10/50
摘要： The invention relates to a method for producing a solar cell that can be contacted on one side from a silicon semiconductor substrate (1) of a first doping type, comprising the following method steps: A) cleaning the surface of at least one emitter face (1a) of the semiconductor substrate provided for the application of an emitter layer (2), B) applying an emitter layer (2) of a second doping type opposite from the first doping type to the emitter face (1a) of the semiconductor substrate and/or to one or more intermediate layers covering the emitter face (1a), in order to form a p-n junction between the emitter layer (2) and the semiconductor substrate (1), C) applying a transversely conductive emitter contacting layer (3), which at least partially overlaps the emitter layer (2) and/or additional intermediate layers covering the emitter layer (2), wherein the emitter layer (2) and the emitter contacting layer (3) are electrically conductively connected and do not cover a plurality of base contacting regions of the emitter face (1a) of the semiconductor substrate and/or are removed again in a plurality of base contacting regions. It is essential that the method comprises the following additional method steps: D) applying an insulating layer (5) onto the emitter face (1a) of the semiconductor substrate at least on the base contacting regions and onto the surface regions of the emitter layer (2) surrounding the base contacting regions and/or of the emitter contacting layer (3), E) opening a plurality of base high doping regions, wherein each base high doping region (4b) is a portion of a base contacting region and a doping agent of the first doping type is introduced locally on the base high doping regions, wherein the local introduction of the doping agent takes place by locally heating at least the semiconductor substrate on the base high doping regions, F) applying one or more base contacting structures by means of an electrochemical process, wherein the base contacting structure is designed to at least partially cover at least one base high doping region (4b) and is electrically conductively connected to the semiconductor substrate (1), G) reinforcing the base contacting structure. It is furthermore essential that the emitter layer (2) is overall not heated to more than 250°C in the method steps that follow method step B.
摘要翻译：本发明涉及一种用于制造由第一掺杂类型的硅半导体基板（1）的单接触太阳能电池中，下面的方法步骤，其包括：表面清洁至少一个E-（2）设置在所述发射极侧（1a）的所述应用程序的米特层的半导体衬底，B的沉积的发射极层（2）的第二的，相反的在半导体基板和/或覆盖物的一个或多个中间层的发射极侧（1a）的发射极侧（1a）的所述第一掺杂类型，对发射极层（2）和半导体衬底之间的pn结的形成（ 1），C施加横向导电Emitterkontaktierungsschicht（3），其至少覆盖所述发射极层（2）和/或进一步地，所述发射器（2）覆盖所述中间层部分层，所述发射极层（2）和Emitterkontaktierungsschicht（3）电连接和多个潜在的合同 taktierungsbereichen发射极侧（1a）中不包括和/或富含Basiskontaktierungsbe回在多个被去除，必要的是，该方法包括在半导体衬底的另一方法步骤：将一绝缘层（5）至少在Basiskon- taktierungsbereichenð 在半导体基板和所述发射极层（2）和/或所述Emitterkontak- tierungsschicht的周围的Basiskontaktierungsbereiche表面区域的发射极侧（1a）中（3）公开电子连接到多个基站的高掺杂区域，每个基地高掺杂区（4b）的一个Basiskontaktierungsbereiches的一部分和本地驱动高杂质区域，其中所述掺杂剂的局部驱动由至少在半导体基板到基座高杂质区域的局部加热制成的基础上的第一掺杂类型的掺杂剂，F施加一个或多个Basiskont 通过电化学方法，其中所述Basiskontaktierungsstruktur形成至少一个基本高杂质区域（4b）的连接的至少部分地覆盖，并与所述半导体衬底的装置共享大约结构（1）是导电的，Basiskontaktierungsstruktur的G增益，并且在没有全球变暖在方法步骤B以下方法步骤所述发射极层（2）上超过250℃下进行

6. 发明申请

WO2009092426A3 SOLAR CELL AND METHOD FOR THE PRODUCTION OF A SOLAR CELL 审中-公开
标题翻译：太阳能电池及其制备方法的太阳能电池
公开(公告)号：WO2009092426A3
公开(公告)日：2009-09-24
申请号：PCT/EP2008010713
申请日：2008-12-16
申请人： FRAUNHOFER GES FORSCHUNG , UNIV ALBERT LUDWIGS FREIBURG , SCHULTZ-WITTMANN OLIVER , GRANEK FILIP , HERMLE MARTIN , BENICK JAN
发明人： SCHULTZ-WITTMANN OLIVER , GRANEK FILIP , HERMLE MARTIN , BENICK JAN
IPC分类号： H01L31/0224 , H01L31/0352 , H01L31/068 , H01L31/18
CPC分类号： H01L31/0682 , H01L31/022441 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a solar cell having a front side for coupling electromagnetic radiation, and a rear side, comprising at least one base metallization (3) and at least one emitter metallization (6), and a semi-conductor structure, which has at least one base region (1) of a first doping type, and at least one emitter region (2) of a second doping type opposite the first doping type, for forming a p-n junction between the base and the emitter, wherein the base metallization (3) is connected to the base region (1) and the emitter metallization (6) is connected to the emitter region (2) in an electrically conductive manner. The base metallization (3) and the emitter metallization (6) are both disposed on a metallization side of the solar cell, which is either the front side or the rear side of the solar cell, and the emitter region (2) extends at least partially along the metallization side of the solar cell. It is essential to the invention that the emitter region (2) extends at least partially into the region of the metallization side covered by the base metallization (3), and that the semi-conductor structure further has an insulating region (4) of the first doping type, which extends along the metallization side of the solar cell at least partially between the base metallization (3) and the emitter region (2). The invention further relates to a method for the production of a solar cell.
摘要翻译：本发明涉及一种具有用于耦合的电磁辐射和后侧的前侧上的太阳能电池，包括至少一种碱金属化（3）和至少一个发射极金属（6）和包括半导体结构的至少一个第一掺杂类型的基部（1）和至少一个发射区（2 ）第二，相反于该第一掺杂类型的掺杂类型的，它包括基部和发射极之间的pn结的形成，所述基础金属化（3）（与该基极区域1）和发射极金属化（6）到发射极区域（2）导电地连接基础金属化（3）和发射极金属化（6）都位于所述太阳能电池的金属化，这是前部或太阳能电池的背面和发射极区（2）沿着所述太阳能电池的金属化侧上的至少部分地延伸。至关重要的是，在发射极区域（2）至少部分地延伸覆盖在基础金属化（3）的金属化的区域中，并且，除了所述半导体结构的隔离区（4）具有沿着所述太阳能电池的金属化侧上的至少部分地之间延伸的第一掺杂类型基础金属化（3）和发射极区（2）。本发明还涉及一种用于制造太阳能电池的方法。

7. 发明申请

WO2009092424A3 SURFACE PASSIVATION OF A SEMI-CONDUCTOR STRUCTURE AND CORRESPPONDING PRODUCTION METHOD 审中-公开
标题翻译：表面钝化半导体结构及相应方法
公开(公告)号：WO2009092424A3
公开(公告)日：2009-09-24
申请号：PCT/EP2008010639
申请日：2008-12-15
申请人： FRAUNHOFER GES FORSCHUNG , UNIV ALBERT LUDWIGS FREIBURG , SCHULTZ OLIVER , BENICK JAN , HERMLE MARTIN
发明人： SCHULTZ OLIVER , BENICK JAN , HERMLE MARTIN
IPC分类号： H01L31/18 , H01L31/0224
CPC分类号： H01L31/1868 , H01L31/022425 , Y02E10/50 , Y02P70/521
摘要： The invention relates to a semi-conductor structure, comprising an n metallization and a p metallization (7), and a semi-conductor substrate having an n-doped base region (1) and a p-doped emitter region (2) adjoining the same at least partially for configuring an emitter/base p-n junction, wherein the emitter region (2) extends at least partially approximately parallel to an emitter surface (2b) of the semi-conductor substrate, and the n metallization is connected to the base region (1), and the p metallization (7) is connected to the emitter region (2) in an electrically conductive manner. It is essential to the invention that the semi-conductor structure further comprises an n-doped passivation region (5), which is disposed at least partially between the emitter surface (2b) and the emitter region (2), wherein the passivation region (5) is neither connected to the n metallization nor to the p metallization (7) in an electrically conductive manner. The invention further relates to a method for the production of such a semi-conductor structure.
摘要翻译：本发明涉及一种半导体结构，包括一个n金属化和p金属化（7），并用n掺杂基极区（1）一个半导体衬底和一个至少部分地邻接的p型掺杂的发射极区（2），用于形成发射器/ 基pn结，所述发射极区域（2）至少部分大致平行地延伸的发射器表面（2b）中的半导体基板和n金属化到基座部分（1）和p Metallisiefung（7）与所述发射极区域（2）被导电地连接。至关重要的是，该半导体结构进一步包括（5），其发射极表面（2b）和所述发射区2之间至少部分地被布置在n型掺杂的钝化区域，其中所述钝化区（5）任一所述n金属化或与对 - 金属化（7）被导电地连接。本发明还涉及一种制造这样的半导体结构的方法。

8. 发明申请

WO2008052767A3 SOLAR CELL AND SOLAR CELL MODULE WITH IMPROVED REAR-SIDE ELECTRODES, AND PRODUCTION METHOD 审中-公开
公开(公告)号：WO2008052767A3
公开(公告)日：2008-09-25
申请号：PCT/EP2007009461
申请日：2007-10-31
申请人： FRAUNHOFER GES FORSCHUNG , SCHULTZ OLIVER , GLUNZ STEFAN , HERMLE MARTIN
发明人： SCHULTZ OLIVER , GLUNZ STEFAN , HERMLE MARTIN
IPC分类号： H01L31/0224 , H01L31/05
CPC分类号： H01L31/022441 , H01L31/0516 , Y02E10/50
摘要： The present invention relates to rear-side contact solar cells and solar cell modules produced therefrom which have a special electrode structure, and to a method for producing them. In this case, the electrodes via which the current of the rear-side contact cell is tapped off are isolated by an insulating layer from the finger contacts connected to the n-type and p-type semiconductor element of the solar cell. The method enables a significant simplification with respect to production methods described from the prior art, by spatially decoupling the structuring of the electrodes from the solar cell.

9. 发明专利

DE102011089759A1 Verfahren zur Herstellung eines Halbleiterbauelements und Halbleiterbauelement 未知
公开(公告)号：DE102011089759A1
公开(公告)日：2013-06-27
申请号：DE102011089759
申请日：2011-12-23
申请人： FRAUNHOFER GES FORSCHUNG
发明人： LOEPER PHILIPP , MUELLER RALPH , JANZ STEFAN DR , HERMLE MARTIN , GLUNZ STEFAN , GOLDSCHMIDT JAN-CHRISTOPH
IPC分类号： H01L21/20 , B82B1/00 , H01L21/60
摘要： Die Erfindung betrifft ein Verfahren zur Herstellung eines Halbleiterbauelements, folgende Verfahrensschritte umfassend: 0 Bereitstellen eines Trägersubstrates, A Abscheiden mindestens einer Halbleiterschicht (3), welche ein siliziumbasiertes Dielektrikum umfasst und B Tempern der Halbleiterschicht bei einer Temperatur von mindestens 700°C für eine Zeitdauer von mindestens 15 Minuten; wobei in den auf Verfahrensschritt A folgenden Verfahrensschritten Silizium-Nanokristalle in der Halbleiterschicht ausgebildet werden. Wesentlich ist, dass in Verfahrensschritt A zunächst mindestens eine Zwischenschicht auf das Trägersubstrat abgeschieden und die Halbleiterschicht auf die Zwischenschicht abgeschieden wird, und dass nach Verfahrensschritt B in einem Verfahrensschritt C das Trägersubstrat zumindest teilweise entfernt wird, um mindestens einen Zugang zu der Halbleiterschicht an einer dem Trägersubstrat zugewandten Rückseite der Halbleiterschicht auszubilden. Die Erfindung betrifft weiterhin ein Halbleiterbauelement.

10. 发明专利

DE102021200675A1 Interferenzfilter, Verfahren zu seiner Herstellung und seiner Verwendung 未知
公开(公告)号：DE102021200675A1
公开(公告)日：2022-07-28
申请号：DE102021200675
申请日：2021-01-26
申请人： FRAUNHOFER GES FORSCHUNG
发明人： HÖHN OLIVER , HAUSER HUBERT , BLÄSI BENEDIKT , KROYER THOMAS , HERMLE MARTIN
IPC分类号： G02B5/28 , G02B1/10 , G02B1/115
摘要： Die Erfindung betrifft einen Interferenzfilter (1) mit einer ersten Seite (2) und einer gegenüberliegenden zweiten Seite (3), enthaltend ein Mehrschichtsystem (4), welches zumindest eine erste Schicht (10) und zumindest eine zweite Schicht (20) enthält, wobei der Brechungsindex entlang der Normalenrichtung des Interferenzfilters variiert, und wobei der Brechungsindex in zumindest einer der ersten und zweiten Schichten (10, 20) zumindest in einer Ebene senkrecht zur Normalenrichtung des Interferenzfilters variiert.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式