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    • 1. 发明申请
    • SOLAR CELL
    • 太阳能电池
    • WO2011032672A2
    • 2011-03-24
    • PCT/EP2010005596
    • 2010-09-13
    • FRAUNHOFER GES FORSCHUNGUNIV ALBERT LUDWIGS FREIBURGHERMLE MARTINHAUSER HUBERTBERGER PAULINEBLAESI BENEDIKTPETERS MARIUSGOLDSCHMIDT JAN CHRISTOPH
    • HERMLE MARTINHAUSER HUBERTBERGER PAULINEBLAESI BENEDIKTPETERS MARIUSGOLDSCHMIDT JAN CHRISTOPH
    • H01L31/0236H01L31/075
    • H01L31/0236H01L31/0547H01L31/056H01L31/075Y02E10/52Y02E10/548
    • The invention relates to a solar cell, comprising a silicon layer which has a dopant of a first dopant type, a front designed for the coupling in of light, and a rear, the silicon layer being a doped base layer, at least one textured layer and a metal layer being arranged on the rear of the silicon layer, optionally on additional intermediate layers, and the textured layer comprising a rear texture in at least a section thereof which rear texture is designed as an optical diffraction structure. It is essential that at least one textured intermediate structure (3, 23, 33) is arranged between the textured layer (2, 22, 32) and the metal layer (4, 24, 34), the metal layer (4, 24, 34) being connected to the textured layer (2, 22, 32) and/or to the base layer (1, 21, 31) in an electrically conducting manner. The textured intermediate structure (3, 23, 33) is substantially transparent at least in the wavelength range of 800 nm to 1100 nm and has a refractive index n smaller than the refractive index of the textured layer in at least this wavelength range. The refractive index of all layers arranged between the base layer (1, 21, 31) and the textured intermediate layer (3, 23, 33) deviates by not more than 30% relative to the refractive index of silicon and the layer which is arranged directly on the rear of the base layer (1, 21, 31) is a passivation layer which passivates the surface with respect to the recombination of minority charge carriers.
    • 本发明涉及一种包括具有第一掺杂类型的掺杂,硅层的太阳能电池的训练用于将光耦合前部和后部,其中,所述硅层是分别是掺杂的基极层,至少一个纹理层和设置在所述硅层的背面侧的金属层, 任选对另外的中间层和至少在背面网纹,其被形成为光学衍射结构的局部区域中的纹理层。 至关重要的是,纹理层(2,22,32)和金属层(4,24,34),至少一个纹理中间结构(3,23,33)之间设置,其特征在于,所述金属层(4,24,34)(带有纹理层2 ,22,32)和/或与基础层(1,21,31)被导电地连接,至少所述中间结构(3,23,33)的在所述波长范围内的纹理800纳米至1100纳米,这是基本上透明的并且至少 具有折射率n小于纹理层的折射率的波长区域中,所有的基极层(1,21,31)和纹理中间结构(3,23,33)之间的折射率比硅的折射率和布置层由30%的最大偏离 这直接在基材层的背面(1,21,31)被布置成该层,相对于表面少数载流子的再结合的钝化钝化ist.ep105750