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    • 1. 发明授权
    • Thermal detector and method
    • 热探测器和方法
    • US5708269A
    • 1998-01-13
    • US693770
    • 1996-08-07
    • Edward G. MeissnerCharles M. Hanson
    • Edward G. MeissnerCharles M. Hanson
    • G01J5/22G01J5/34H01L37/02H04N5/33H01L31/09
    • H01L37/02G01J5/22G01J5/34H04N5/33
    • A thermal imaging system (10) for providing an image representative of an amount of thermal radiation incident to the system is provided. The system (10) includes a thermal detector (28 or 30) made from a layer of temperature sensitive material forming a first element of a signal-producing circuit (54). The first element (28 or 30) has either a resistance or capacitance value depending on its temperature. The system (10) also includes an integrated circuit substrate (32) having a second element (56 or 58) of the signal-producing circuit (54) complementary and electrically coupled to the first element (28 or 30). The signal-producing circuit (54) may produce an output signal having a amplitude. The amplitude of the output signal is monitored as representing an absolute temperature of the detector (28 or 30) so as to determine the amount of thermal energy incident to the system (10).
    • 提供一种用于提供表示入射到系统的热辐射量的图像的热成像系统(10)。 系统(10)包括由形成信号产生电路(54)的第一元件的感温材料层制成的热检测器(28或30)。 第一个元件(28或30)的电阻或电容值取决于其温度。 系统(10)还包括集成电路基板(32),其具有互补且电耦合到第一元件(28或30)的信号产生电路(54)的第二元件(56或58)。 信号产生电路(54)可以产生具有振幅的输出信号。 监测输出信号的振幅,表示检测器(28或30)的绝对温度,以便确定入射到系统(10)的热能的量。
    • 2. 发明授权
    • Thermal isolation of hybrid thermal detectors through an anisotropic etch
    • 通过各向异性蚀刻对混合热探测器进行热隔离
    • US5478242A
    • 1995-12-26
    • US236778
    • 1994-04-29
    • William K. WalkerSteven N. FrankCharles M. HansonRobert J. S. KyleEdward G. MeissnerRobert A. OwenGail D. Shelton
    • William K. WalkerSteven N. FrankCharles M. HansonRobert J. S. KyleEdward G. MeissnerRobert A. OwenGail D. Shelton
    • H01L27/146H01L37/02H01L31/18
    • H01L37/02H01L27/1465
    • A thermal isolation structure (10) is disposed between a focal plane array and an integrated circuit substrate (12). The thermal isolation structure (10) includes a mesa-type formation (16) and a mesa strip conductor (18, 26) extending from the top of the mesa-type formation (16) to an associated contact pad (14) on the integrated circuit substrate (12). After formation of the mesa-type formation (16) and the mesa strip conductor (18, 26), an anisotropic etch using the mesa strip conductor (18, 26) as an etch mask removes excess mesa material to form trimmed mesa-type formation (24) for improved thermal isolation. Bump bonding material (20) may be deposited on mesa strip conductor (18, 26) and can also be used as an etch mask during the anisotropic etch. Thermal isolation structure (100) can include mesa-type formations (102), each with a centrally located via (110) extending vertically to an associated contact pad (104) of integrated circuit substrate (106). A conductor (108) is deposited on top of mesa-type formation (102), along the walls of via (110), and overlying contact pad (104). An anisotropic etch using the conductor (108) as an etch mask removes excess mesa material (118) for improved thermal isolation.
    • 热隔离结构(10)设置在焦平面阵列和集成电路基板(12)之间。 热隔离结构(10)包括从台面型结构(16)的顶部延伸到集成的台面型结构(16)的相关接触垫(14)的台面型结构(16)和台面状导体(18,26) 电路基板(12)。 在形成台面型结构(16)和台面状导体(18,26)之后,使用台面导体(18,26)作为蚀刻掩模的各向异性蚀刻去除多余的台面材料以形成修整的台面形成 (24),用于改善热隔离。 凸起接合材料(20)可以沉积在台面状导体(18,26)上,并且也可以在各向异性蚀刻期间用作蚀刻掩模。 热隔离结构(100)可以包括台面型结构(102),每个都具有垂直延伸到集成电路衬底(106)的相关接触焊盘(104)的中心定位的通孔(110)。 导体(108)沿着通孔(110)的壁和覆盖接触垫(104)沉积在台面型结构(102)的顶部上。 使用导体(108)作为蚀刻掩模的各向异性蚀刻去除多余的台面材料(118)以改善热隔离。
    • 4. 发明授权
    • Inter-pixel thermal isolation for hybrid thermal detectors
    • 用于混合热探测器的像素间隔热隔离
    • US5424544A
    • 1995-06-13
    • US235835
    • 1994-04-29
    • Gail D. SheltonJames F. BelcherSteven N. FrankCharles M. HansonEdward G. MeissnerRobert A. Owen
    • Gail D. SheltonJames F. BelcherSteven N. FrankCharles M. HansonEdward G. MeissnerRobert A. Owen
    • G01J5/34H01L37/02H04N5/33
    • G01J5/34H01L37/02
    • A thermal detection system (100, 200) includes a focal plane array (102, 202), a thermal isolation structure (104, 204) and an integrated circuit substrate (106, 206). The focal plane array (102, 202) includes thermal sensors (114, 214) formed from a pyroelectric element (116, 216), such as barium strontium titanate (BST). One side of the pyroelectric element (116, 216) is coupled to a contact pad (110, 210) disposed on the integrated circuit substrate (106, 206) through a mesa strip conductor (112, 212) of the thermal isolation structure (104, 204). The other side of the pyroelectric element (116, 216) is coupled to a common electrode (120, 220). In one embodiment, slots (128) are formed in the common electrode (120) intermediate the thermal sensors (114) to improve inter-pixel thermal isolation. In another embodiment, slots (236) are formed in the optical coating (224) to improve inter-pixel thermal isolation. The common electrode (120, 220) may be formed from a thermally insulating material, such as a silicon monoxide and chromium matrix (cermet) or other metal oxide.
    • 热检测系统(100,200)包括焦平面阵列(102,202),热隔离结构(104,204)和集成电路基板(106,206)。 焦平面阵列(102,202)包括由热电元件(116,216)形成的热传感器(114,214),例如钛酸锶钡(BST)。 热电元件(116,216)的一侧通过热隔离结构(104,210)的台面导体(112,212)耦合到设置在集成电路基板(106,206)上的接触焊盘(110,210) ,204)。 热电元件(116,216)的另一侧耦合到公共电极(120,220)。 在一个实施例中,槽(128)形成在热传感器(114)中间的公共电极(120)中,以改进像素间热隔离。 在另一个实施例中,槽(236)形成在光学涂层(224)中以改进像素间热隔离。 公共电极(120,220)可以由诸如一氧化硅和铬基体(金属陶瓷)或其它金属氧化物的绝热材料形成。
    • 7. 发明授权
    • Thermal isolation of hybrid thermal detectors through an anisotropic etch
    • 通过各向异性蚀刻对混合热探测器进行热隔离
    • US5572059A
    • 1996-11-05
    • US477718
    • 1995-06-07
    • William K. WalkerSteven N. FrankCharles M. HansonRobert J. S. KyleEdward G. MeissnerRobert A. OwenGail D. Shelton
    • William K. WalkerSteven N. FrankCharles M. HansonRobert J. S. KyleEdward G. MeissnerRobert A. OwenGail D. Shelton
    • H01L27/146H01L37/02H01L27/095
    • H01L37/02H01L27/1465
    • A thermal isolation structure (10) is disposed between a focal plane array and an integrated circuit substrate (12). The thermal isolation structure (10) includes a mesa-type formation (16) and a mesa strip conductor (18, 26) extending from the top of the mesa-type formation (16) to an associated contact pad (14) on the integrated circuit substrate (12). After formation of the mesa-type formation (16) and the mesa strip conductor (18, 26), an anisotropic etch using the mesa strip conductor (18, 26) as an etch mask removes excess mesa material to form trimmed mesa-type formation (24) for improved thermal isolation. Bump bonding material (20) may be deposited on mesa strip conductor (18, 26) and can also be used as an etch mask during the anisotropic etch. Thermal isolation structure (100) can include mesa-type formations (102), each with a centrally located via (110) extending vertically to an associated contact pad (104) of integrated circuit substrate (106). A conductor (108) is deposited on top of mesa-type formation (102), along the walls of via (110), and overlaying contact pad (104). An anistropic etch using the conductor (108) as an etch mask removes excess mesa material (118) for improved thermal isolation.
    • 热隔离结构(10)设置在焦平面阵列和集成电路基板(12)之间。 热隔离结构(10)包括从台面型结构(16)的顶部延伸到集成的台面型结构(16)的相关接触垫(14)的台面型结构(16)和台面状导体(18,26) 电路基板(12)。 在形成台面型结构(16)和台面状导体(18,26)之后,使用台面导体(18,26)作为蚀刻掩模的各向异性蚀刻去除多余的台面材料以形成修整的台面形成 (24),用于改善热隔离。 凸起接合材料(20)可以沉积在台面状导体(18,26)上,并且也可以在各向异性蚀刻期间用作蚀刻掩模。 热隔离结构(100)可以包括台面型结构(102),每个都具有垂直延伸到集成电路衬底(106)的相关接触焊盘(104)的中心定位的通孔(110)。 导体(108)沿着通孔(110)的壁和覆盖接触焊盘(104)沉积在台面型结构(102)的顶部上。 使用导体(108)作为蚀刻掩模的无捻蚀刻去除多余的台面材料(118)以改善热隔离。