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1. 发明授权

US5604977A Method of fabricating focal plane array 失效
标题翻译：焦平面阵列的制作方法
公开(公告)号：US5604977A
公开(公告)日：1997-02-25
申请号：US478570
申请日：1995-06-07
申请人： James E. Robinson , James F. Belcher , Howard R. Beratan , Steven N. Frank , Charles M. Hanson , Paul O. Johnson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton , William K. Walker
发明人： James E. Robinson , James F. Belcher , Howard R. Beratan , Steven N. Frank , Charles M. Hanson , Paul O. Johnson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton , William K. Walker
IPC分类号： G01J1/02 , G01J5/34 , G01J5/48 , H01L37/02 , H04N5/33 , H01R43/00
CPC分类号： G01J5/34 , H01L37/02 , Y10T29/49117 , Y10T29/49126 , Y10T29/49144
摘要： A thermal detection system (10) includes a focal plane array (12), a thermal isolation structure (14), and an integrated circuit substrate (16). Focal plane array (12) includes thermal sensors (28), each having an associated thermal sensitive element (30). Thermal sensitive element (30) is coupled with one side to infrared absorber and common electrode assembly (36) and on the opposite side to an associated contact pad (20) disposed on the integrated circuit substrate (16). Reticulation kerfs (52a, 52b) separate adjacent thermal sensitive elements (30a, 30b, 30c) by a distance at least half the average width (44, 46) of a single thermal sensitive element (30a, 30b, 30c). A continuous, non-reticulated optical coating (38) may be disposed over thermal sensitive elements (30a, 30b, 30c) to maximize absorption of thermal radiation incident to focal plane array (12).
摘要翻译：热检测系统（10）包括焦平面阵列（12），热隔离结构（14）和集成电路基板（16）。焦平面阵列（12）包括热传感器（28），每个具有相关联的热敏元件（30）。热敏元件（30）与一侧耦合到红外线吸收器和公共电极组件（36），并且与设置在集成电路衬底（16）上的相关接触焊盘（20）的相对侧耦合。相邻的热敏元件（30a，30b，30c）与单个热敏元件（30a，30b，30c）的平均宽度（44,46）的至少一半的距离分开。可以在热敏元件（30a，30b，30c）上设置连续的非网状光学涂层（38），以最大程度地吸收入射到焦平面阵列（12）的热辐射。

2. 发明授权

US5478242A Thermal isolation of hybrid thermal detectors through an anisotropic etch 失效
标题翻译：通过各向异性蚀刻对混合热探测器进行热隔离
公开(公告)号：US5478242A
公开(公告)日：1995-12-26
申请号：US236778
申请日：1994-04-29
申请人： William K. Walker , Steven N. Frank , Charles M. Hanson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton
发明人： William K. Walker , Steven N. Frank , Charles M. Hanson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton
IPC分类号： H01L27/146 , H01L37/02 , H01L31/18
CPC分类号： H01L37/02 , H01L27/1465
摘要： A thermal isolation structure (10) is disposed between a focal plane array and an integrated circuit substrate (12). The thermal isolation structure (10) includes a mesa-type formation (16) and a mesa strip conductor (18, 26) extending from the top of the mesa-type formation (16) to an associated contact pad (14) on the integrated circuit substrate (12). After formation of the mesa-type formation (16) and the mesa strip conductor (18, 26), an anisotropic etch using the mesa strip conductor (18, 26) as an etch mask removes excess mesa material to form trimmed mesa-type formation (24) for improved thermal isolation. Bump bonding material (20) may be deposited on mesa strip conductor (18, 26) and can also be used as an etch mask during the anisotropic etch. Thermal isolation structure (100) can include mesa-type formations (102), each with a centrally located via (110) extending vertically to an associated contact pad (104) of integrated circuit substrate (106). A conductor (108) is deposited on top of mesa-type formation (102), along the walls of via (110), and overlying contact pad (104). An anisotropic etch using the conductor (108) as an etch mask removes excess mesa material (118) for improved thermal isolation.
摘要翻译：热隔离结构（10）设置在焦平面阵列和集成电路基板（12）之间。热隔离结构（10）包括从台面型结构（16）的顶部延伸到集成的台面型结构（16）的相关接触垫（14）的台面型结构（16）和台面状导体（18,26）电路基板（12）。在形成台面型结构（16）和台面状导体（18,26）之后，使用台面导体（18,26）作为蚀刻掩模的各向异性蚀刻去除多余的台面材料以形成修整的台面形成（24），用于改善热隔离。凸起接合材料（20）可以沉积在台面状导体（18,26）上，并且也可以在各向异性蚀刻期间用作蚀刻掩模。热隔离结构（100）可以包括台面型结构（102），每个都具有垂直延伸到集成电路衬底（106）的相关接触焊盘（104）的中心定位的通孔（110）。导体（108）沿着通孔（110）的壁和覆盖接触垫（104）沉积在台面型结构（102）的顶部上。使用导体（108）作为蚀刻掩模的各向异性蚀刻去除多余的台面材料（118）以改善热隔离。

3. 发明授权

US5457318A Thermal detector apparatus and method using reduced thermal capacity 失效
标题翻译：热检测装置和使用降低热容量的方法
公开(公告)号：US5457318A
公开(公告)日：1995-10-10
申请号：US235413
申请日：1994-04-29
申请人： James E. Robinson , James F. Belcher , Howard R. Beratan , Steven N. Frank , Charles M. Hanson , Paul O. Johnson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton , William K. Walker
发明人： James E. Robinson , James F. Belcher , Howard R. Beratan , Steven N. Frank , Charles M. Hanson , Paul O. Johnson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton , William K. Walker
IPC分类号： G01J1/02 , G01J5/34 , G01J5/48 , H01L37/02 , H04N5/33 , G01J5/06
CPC分类号： G01J5/34 , H01L37/02 , Y10T29/49117 , Y10T29/49126 , Y10T29/49144
摘要： A thermal detection system (10) includes a focal plane array (12), a thermal isolation structure (14), and an integrated circuit substrate (16). Focal plane array (12) includes thermal sensors (28), each having an associated thermal sensitive element (30). Thermal sensitive element (30) is coupled with one side to infrared absorber and common electrode assembly (36) and on the opposite side to an associated contact pad (20) disposed on the integrated circuit substrate (16). Reticulation kerfs (52a, 52b) separate adjacent thermal sensitive elements (30a, 30b, 30c) by a distance at least half the average width (44, 46) of a single thermal sensitive element (30a, 30b, 30c). A continuous, non-reticulated optical coating (38) may be disposed over thermal sensitive elements (30a, 30b, 30c) to maximize absorption of thermal radiation incident to focal plane array (12).
摘要翻译：热检测系统（10）包括焦平面阵列（12），热隔离结构（14）和集成电路基板（16）。焦平面阵列（12）包括热传感器（28），每个具有相关联的热敏元件（30）。热敏元件（30）与一侧耦合到红外线吸收器和公共电极组件（36），并且与设置在集成电路衬底（16）上的相关接触焊盘（20）的相对侧耦合。相邻的热敏元件（30a，30b，30c）与单个热敏元件（30a，30b，30c）的平均宽度（44,46）的至少一半的距离分开。可以在热敏元件（30a，30b，30c）上设置连续的非网状光学涂层（38），以最大程度地吸收入射到焦平面阵列（12）的热辐射。

4. 发明授权

US5572059A Thermal isolation of hybrid thermal detectors through an anisotropic etch 失效
标题翻译：通过各向异性蚀刻对混合热探测器进行热隔离
公开(公告)号：US5572059A
公开(公告)日：1996-11-05
申请号：US477718
申请日：1995-06-07
申请人： William K. Walker , Steven N. Frank , Charles M. Hanson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton
发明人： William K. Walker , Steven N. Frank , Charles M. Hanson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton
IPC分类号： H01L27/146 , H01L37/02 , H01L27/095
CPC分类号： H01L37/02 , H01L27/1465
摘要： A thermal isolation structure (10) is disposed between a focal plane array and an integrated circuit substrate (12). The thermal isolation structure (10) includes a mesa-type formation (16) and a mesa strip conductor (18, 26) extending from the top of the mesa-type formation (16) to an associated contact pad (14) on the integrated circuit substrate (12). After formation of the mesa-type formation (16) and the mesa strip conductor (18, 26), an anisotropic etch using the mesa strip conductor (18, 26) as an etch mask removes excess mesa material to form trimmed mesa-type formation (24) for improved thermal isolation. Bump bonding material (20) may be deposited on mesa strip conductor (18, 26) and can also be used as an etch mask during the anisotropic etch. Thermal isolation structure (100) can include mesa-type formations (102), each with a centrally located via (110) extending vertically to an associated contact pad (104) of integrated circuit substrate (106). A conductor (108) is deposited on top of mesa-type formation (102), along the walls of via (110), and overlaying contact pad (104). An anistropic etch using the conductor (108) as an etch mask removes excess mesa material (118) for improved thermal isolation.
摘要翻译：热隔离结构（10）设置在焦平面阵列和集成电路基板（12）之间。热隔离结构（10）包括从台面型结构（16）的顶部延伸到集成的台面型结构（16）的相关接触垫（14）的台面型结构（16）和台面状导体（18,26）电路基板（12）。在形成台面型结构（16）和台面状导体（18,26）之后，使用台面导体（18,26）作为蚀刻掩模的各向异性蚀刻去除多余的台面材料以形成修整的台面形成（24），用于改善热隔离。凸起接合材料（20）可以沉积在台面状导体（18,26）上，并且也可以在各向异性蚀刻期间用作蚀刻掩模。热隔离结构（100）可以包括台面型结构（102），每个都具有垂直延伸到集成电路衬底（106）的相关接触焊盘（104）的中心定位的通孔（110）。导体（108）沿着通孔（110）的壁和覆盖接触焊盘（104）沉积在台面型结构（102）的顶部上。使用导体（108）作为蚀刻掩模的无捻蚀刻去除多余的台面材料（118）以改善热隔离。

5. 发明授权

US5552326A Method for forming electrical contact to the optical coating of an infrared detector using conductive epoxy 失效
标题翻译：使用导电环氧树脂与红外检测器的光学涂层形成电接触的方法
公开(公告)号：US5552326A
公开(公告)日：1996-09-03
申请号：US397706
申请日：1995-03-01
申请人： Steven N. Frank , James F. Belcher , Charles E. Stanford , Robert A. Owen , Robert J. S. Kyle
发明人： Steven N. Frank , James F. Belcher , Charles E. Stanford , Robert A. Owen , Robert J. S. Kyle
IPC分类号： H01L21/60 , H01L31/0224 , H01L31/18 , H01L21/58
CPC分类号： H01L31/022408 , H01L24/11 , H01L2224/13099 , H01L2924/01013 , H01L2924/01022 , H01L2924/01033 , H01L2924/01038 , H01L2924/01056 , H01L2924/01077 , H01L2924/01079 , H01L2924/10329 , H01L2924/12042 , H01L2924/14 , H01L2924/19041
摘要： This is a system and method of forming an electrical contact to the optical coating of an infrared detector using conductive epoxy. The method may comprise: forming thermal isolation trenches 22 and bias contact vias 23 in a substrate 20; depositing a trench filler 24 in the thermal isolation trenches 22; depositing conductive epoxy 50 into the bias contact vias 23; replanarizing; depositing a common electrode layer 31 over the thermal isolation trenches 22 and vias 23; depositing an optical coating 26 above the common electrode layer 31; mechanically polishing a backside of the substrate 20 to expose the trench filler 24 and conductive epoxy 50; depositing a contact metal 34 on the backside of the substrate 20; etching the contact metal 34 and the trench filler 24 to form pixel mesas of the contact metal 34 and the substrate 20.
摘要翻译：这是使用导电环氧树脂形成与红外检测器的光学涂层的电接触的系统和方法。该方法可以包括：在衬底20中形成热隔离沟槽22和偏置接触通孔23; 在热隔离槽22中沉积沟槽填料24; 将导电环氧树脂50沉积到偏压接触通孔23中; 补充; 在热隔离槽22和通孔23上沉积公共电极层31; 在公共电极层31上沉积光学涂层26; 机械抛光衬底20的背面以暴露沟槽填料24和导电环氧树脂50; 在衬底20的背面沉积接触金属34; 蚀刻接触金属34和沟槽填料24以形成接触金属34和基板20的像素台面。

6. 发明授权

US5646066A Method for forming electrical contact to the optical coating of an infrared detector from the backside of the detector 失效
标题翻译：从检测器的背面形成与红外探测器的光学涂层的电接触的方法
公开(公告)号：US5646066A
公开(公告)日：1997-07-08
申请号：US396944
申请日：1995-03-01
申请人： Steven N. Frank , James F. Belcher , Charles E. Stanford , Robert A. Owen , Robert J. S. Kyle
发明人： Steven N. Frank , James F. Belcher , Charles E. Stanford , Robert A. Owen , Robert J. S. Kyle
IPC分类号： H01L31/0216 , H01L31/0224 , H01L21/44
CPC分类号： H01L31/022408 , H01L31/02161 , Y10S148/08 , Y10S148/135 , Y10S438/977
摘要： This is a system and method of forming an electrical contact to the optical coating of an infrared detector. The method may comprise: forming thermal isolation trenches 22 in a substrate 20; depositing a trench filler 24 in the thermal isolation trenches 22; depositing a common electrode layer 31 over the thermal isolation trenches 22; depositing an optical coating 26 above the common electrode layer 31; mechanically thinning the substrate to expose the trench filler 24; etching to remove the trench filler 24 in the bias contact area; depositing a contact metal 34 on the backside of the substrate 20, wherein the contact metal 34 connects to the common electrode layer 31 at bias contact areas 34 around a periphery of the thermal isolation trenches; and etching the contact metal 34 and the trench filler 24 to form pixel mesas of the contact metal 34 and the substrate 20. Bias contact vias 23 may be formed in the bias contact areas and then filled with bias contact metal 49. Alternately, the bias contact vias may also be filled with the contact metal 34. The thermal isolation trenches may be formed by laser vaporization, ion milling or other equivalent methods. In addition, an elevation layer may be formed between the optical coating and the substrate to provide greater tolerances for ion milling. The elevation layer may be filled with a trench filler and then removed after milling. Alternately, the elevation layer may be filled with a metal 49 to connect the bias contact metal to the common electrode in the bias contact areas.
摘要翻译：这是形成与红外检测器的光学涂层的电接触的系统和方法。该方法可以包括：在衬底20中形成热隔离沟槽22; 在热隔离槽22中沉积沟槽填料24; 在热隔离槽22上沉积公共电极层31; 在公共电极层31上沉积光学涂层26; 机械地使衬底变薄以暴露沟槽填料24; 蚀刻以去除偏压接触区域中的沟槽填料24; 在衬底20的背面沉积接触金属34，其中接触金属34在围绕热隔离沟槽的周边的偏置接触区域34处连接到公共电极层31; 并且蚀刻接触金属34和沟槽填充剂24以形成接触金属34和衬底20的像素台面。可以在偏置接触区域中形成偏置接触通孔23，然后用偏置接触金属49填充。或者，偏置接触通孔也可以用接触金属34填充。热隔离沟槽可以通过激光蒸发，离子研磨或其它等效方法形成。此外，可以在光学涂层和基板之间形成升高层，以提供更大的离子铣削公差。仰角层可以填充沟槽填料，然后在研磨后除去。或者，仰角层可以用金属49填充，以将偏置接触金属连接到偏置接触区域中的公共电极。

7. 发明授权

US5608254A Method for forming electrical contact to the optical coating of an infrared detector using conductive epoxy 失效
标题翻译：使用导电环氧树脂与红外检测器的光学涂层形成电接触的方法
公开(公告)号：US5608254A
公开(公告)日：1997-03-04
申请号：US473838
申请日：1995-06-07
申请人： Steven N. Frank , James F. Belcher , Charles E. Stanford , Robert A. Owen , Robert J. S. Kyle
发明人： Steven N. Frank , James F. Belcher , Charles E. Stanford , Robert A. Owen , Robert J. S. Kyle
IPC分类号： H01L21/60 , H01L31/0224 , H01L31/0232
CPC分类号： H01L31/022408 , H01L24/11 , H01L2224/13099 , H01L2924/01013 , H01L2924/01022 , H01L2924/01033 , H01L2924/01038 , H01L2924/01056 , H01L2924/01077 , H01L2924/01079 , H01L2924/10329 , H01L2924/12042 , H01L2924/14 , H01L2924/19041
摘要： This is a system and method of forming an electrical contact to the optical coating of an infrared detector using conductive epoxy. The method may comprise: forming thermal isolation trenches 22 and bias contact vias 23 in a substrate 20; depositing a trench filler 24 in the thermal isolation trenches 22; depositing conductive epoxy 50 into the bias contact vias 23; replanarizing; depositing a common electrode layer 31 over the thermal isolation trenches 22 and vias 23; depositing an optical coating 26 above the common electrode layer 31; mechanically polishing a backside of the substrate 20 to expose the trench filler 24 and conductive epoxy 50; depositing a contact metal 34 on the backside of the substrate 20; etching the contact metal 34 and the trench filler 24 to form pixel mesas of the contact metal 34 and the substrate 20.
摘要翻译：这是使用导电环氧树脂形成与红外检测器的光学涂层的电接触的系统和方法。该方法可以包括：在衬底20中形成热隔离沟槽22和偏置接触通孔23; 在热隔离槽22中沉积沟槽填料24; 将导电环氧树脂50沉积到偏压接触通孔23中; 补充; 在热隔离槽22和通孔23上沉积公共电极层31; 在公共电极层31上沉积光学涂层26; 机械抛光衬底20的背面以暴露沟槽填料24和导电环氧树脂50; 在衬底20的背面沉积接触金属34; 蚀刻接触金属34和沟槽填料24以形成接触金属34和基板20的像素台面。

8. 发明授权

US5565682A Electrical contact to the common electrode of an infrared detector array 失效
标题翻译：与红外探测器阵列的公共电极电接触
公开(公告)号：US5565682A
公开(公告)日：1996-10-15
申请号：US475959
申请日：1995-06-07
申请人： Steven N. Frank , James F. Belcher , Charles E. Stanford , Robert A. Owen , Robert J. S. Kyle
发明人： Steven N. Frank , James F. Belcher , Charles E. Stanford , Robert A. Owen , Robert J. S. Kyle
IPC分类号： G01J5/34 , H01L37/02 , G01J5/02
CPC分类号： H01L37/02 , G01J5/34 , Y10S438/928 , Y10T29/435 , Y10T29/49155
摘要： A system for infrared sensing has thermally sensitive picture elements within a substrate; bias contact areas within the substrate and around a periphery of the thermally sensitive picture elements; a common electrode on a front side of the thermally sensitive picture elements and the bias contact areas; an optical coating on top of the common electrode; a first electrical contact metal on a backside of the thermally sensitive picture elements; and a second electrical contact metal connected to the bias contact areas on a backside of the bias contact areas and electrically connected to the common electrode. The bias contact areas may include a conductive substrate area. In addition, the device may be connected to an integrated circuit by an ohmic connection to the first and/or the second electrical contact metal.
摘要翻译：用于红外感测的系统在衬底内具有热敏像素; 衬底内的偏置接触区域和热敏图像元件的周围; 在热敏图像元件的正面上的公共电极和偏置接触区域; 公共电极顶部的光学涂层; 在热敏图像元件的背面上的第一电接触金属; 以及第二电接触金属，其连接到偏置接触区域的背侧上的偏置接触区域并电连接到公共电极。偏置接触区域可以包括导电衬底区域。此外，器件可以通过与第一和/或第二电接触金属的欧姆连接而连接到集成电路。

9. 发明授权

US5737818A Method for forming electrical contact to the optical coating of an infrared detector 失效
公开(公告)号：US5737818A
公开(公告)日：1998-04-14
申请号：US711224
申请日：1996-08-30
申请人： Steven N. Frank , James F. Belcher , Charles E. Stanford , Robert A. Owen , Robert J. S. Kyle
发明人： Steven N. Frank , James F. Belcher , Charles E. Stanford , Robert A. Owen , Robert J. S. Kyle
IPC分类号： G01J5/34 , H01L37/02 , H01L31/18
CPC分类号： H01L37/02 , G01J5/34 , Y10S438/928 , Y10T29/435 , Y10T29/49155
摘要： This is a system and method of forming an electrical contact to the optical coating of an infrared detector. The method may comprise: forming thermal isolation trenches 22 and contact vias 23 in a substrate 20; depositing a bias contact metal 32 into the vias 23 forming biasing contact areas around a periphery of the substrate 20; depositing a first trench filler 24 in the trenches 22 and vias 23; replanarizing; depositing a common electrode layer 25 over the thermal isolation trenches and the biasing contact areas; mechanically thinning the substrate 20 to expose the biasing contact area 32 and the trench filler 24; depositing a contact metal 34 on the backside of the substrate 20, the exposed trench filler 24 and the exposed bias contact area; and etching the contact metal 34 and the trench filler 24 to form pixel mesas of the contact metal 34 and the substrate 20. The thermal isolation trenches 22 and the bias contact vias 23 may be formed by ion milling or laser vaporization. Alternately, the bias contact areas 23 may be formed by performing laser vaporization on the substrate 20 to produce conductive 23 areas within the substrate.

10. 发明授权

US5696002A Method for forming electrical contact to the optical coating of an infrared detector from the backside of the detector 失效
公开(公告)号：US5696002A
公开(公告)日：1997-12-09
申请号：US635047
申请日：1996-04-19
申请人： Steven N. Frank , James F. Belcher , Charles E. Stanford , Robert A. Owen , Robert J. S. Kyle
发明人： Steven N. Frank , James F. Belcher , Charles E. Stanford , Robert A. Owen , Robert J. S. Kyle
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/18
CPC分类号： H01L31/022408 , H01L31/02161 , Y10S148/08 , Y10S148/135 , Y10S438/977
摘要： This is a system and method of forming an electrical contact to the optical coating of an infrared detector. The method may comprise: forming thermal isolation trenches 22 in a substrate 20; depositing a trench filler 24 in the thermal isolation trenches 22; depositing a common electrode layer 31 over the thermal isolation trenches 22; depositing an optical coating 26 above the common electrode layer 31; mechanically thinning the substrate to expose the trench filler 24; etching to remove the trench filler 24 in the bias contact area; depositing a contact metal 34 on the backside of the substrate 20, wherein the contact metal 34 connects to the common electrode layer 31 at bias contact areas 34 around a periphery of the thermal isolation trenches; and etching the contact metal 34 and the trench filler 24 to form pixel mesas of the contact metal 34 and the substrate 20. Bias contact vias 23 may be formed in the bias contact areas and then filled with bias contact metal 49. Alternately, the bias contact vias may also be filled with the contact metal 34. The thermal isolation trenches may be formed by laser vaporization, ion milling or other equivalent methods. In addition, an elevation layer may be formed between the optical coating and the substrate to provide greater tolerances for ion milling. The elevation layer may be filled with a trench filler and then removed after milling. Alternately, the elevation layer may be filled with a metal 49 to connect the bias contact metal to the common electrode in the bias contact areas.

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