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1. 发明专利

JP2007308807A Electrolytic treating device and electric field state control method 审中-公开
标题翻译：电解处理装置和电场状态控制方法
公开(公告)号：JP2007308807A
公开(公告)日：2007-11-29
申请号：JP2007213896
申请日：2007-08-20
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： MAKINO NATSUKI , MISHIMA KOJI , KUNISAWA JUNJI , INOUE HIROAKI , KIMURA NORIO , ODAGAKI MITSUKO , TSUJIMURA MANABU , MATSUDA TETSURO , KANEKO HISAFUMI , MORITA TOSHIYUKI , OKUMURA KATSUYA
IPC分类号： C25D17/10 , C25D7/12 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide an electrolytic treating device which makes it possible to obtain the in-plane distribution of a desired plating film thickness by positively controlling the electric field state of the surface of a substrate to be treated and an electric field state control method for the same.
SOLUTION: A plating liquid 10 is filled between an anode 38 and the substrate W to be treated and a high-resistance structure 4 having the electrical conductivity lower than the electrical conductivity of the plating liquid 10 is installed between the anode 38 and the substrate W. The electric field on the surface of the substrate W is controlled by adjusting the thickness of the high resistant structure 4 or the shape of the high resistant structure 4 on a plane surface.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种电解处理装置，其可以通过积极地控制待处理的基板的表面的电场状态和电流来获得期望的镀膜厚度的面内分布场状态控制方法相同。解决方案：在阳极38和待处理的基板W之间填充电镀液10，将具有比电镀液10的导电性低的导电率的高电阻结构4安装在阳极38和通过在平面上调整高阻结构体4的厚度或耐高压结构体4的形状来控制基板W的表面上的电场。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2006339665A Apparatus for manufacturing semiconductor substrate 审中-公开
标题翻译：制造半导体基板的装置
公开(公告)号：JP2006339665A
公开(公告)日：2006-12-14
申请号：JP2006169432
申请日：2006-06-19
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： KIMURA NORIO , MISHIMA KOJI , KUNISAWA JUNJI , MAKINO NATSUKI , TSUJIMURA MANABU , MATSUDA TETSURO , KANEKO HISAFUMI , OKUMURA KATSUYA
IPC分类号： H01L21/288 , C25D7/12 , C25D19/00 , H01L21/304 , H01L21/677
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a semiconductor substrate suitable for a small-scaled manufacturing line, which can produce various products in small amounts, cope with a large change of the number of products, produce products having a short product life, and is capable of changing the function flexibly or updating the apparatus. SOLUTION: The apparatus for manufacturing the semiconductor substrate is equipped with a loader/unloader 120, a plurality of treatment units such as a plating film-forming film unit 113, and a transfer mechanism (robots 131-134) which transfers the semiconductor substrate between the units. The mounting portion of each unit has a guide. Each unit can be loaded to the apparatus for manufacturing the semiconductor substrate, or removed from the apparatus for manufacturing the semiconductor substrate, and exchanged for other units, by moving along the guide. The apparatus for manufacturing the semiconductor substrate is comprised by freely combining the units needed in the semiconductor manufacturing processes. And the units performing distinct treatments in the apparatus for manufacturing the semiconductor substrate can be exchanged each other. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供适合于能够少量生产各种产品的适合于小规模生产线的半导体基板的设备，可以应对产品数量的大量变化，生产具有产品寿命短，并且能够灵活地改变功能或更新设备。解决方案：用于制造半导体衬底的装置装备有装载器/卸载器120，多个处理单元如镀膜形成膜单元113和转移机构（机器人131-134）半导体衬底之间的单元。每个单元的安装部分都有一个导轨。每个单元可以被加载到用于制造半导体衬底的装置中，或者从用于制造半导体衬底的装置中移除，并且通过沿导向件移动而被交换到其它单元。用于制造半导体衬底的装置包括通过自由组合半导体制造工艺中所需的单元。并且在用于制造半导体衬底的装置中执行不同处理的单元可以彼此交换。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2005146398A Plating method and plating apparatus 审中-公开
标题翻译：电镀方法和镀膜装置
公开(公告)号：JP2005146398A
公开(公告)日：2005-06-09
申请号：JP2003389702
申请日：2003-11-19
申请人： Ebara Corp , 株式会社荏原製作所
发明人： IDE KUNIHITO , MISHIMA KOJI , KANDA HIROYUKI , SUZUKI HIDENAO , NOMURA KAZUFUMI
IPC分类号： C25D3/38 , C25D7/12 , H01L21/288 , H01L21/44 , H01L21/768
CPC分类号： C25D17/001 , C25D3/38 , C25D7/123 , H01L21/2885
摘要： PROBLEM TO BE SOLVED: To form a plating film having superior in-plane uniformity on a thinned seed layer, and besides, having superior properties of plugging a refined damascene structure.
SOLUTION: This plating method comprises placing an electric resistor 534 between an electric conductor layer formed on at least one part of the surface of a substrate and an anode 536; introducing a plating liquid 550 containing 25 to 75 g/L copper ions and 0.4 mol/L or more organic or inorganic acid, into a space of the conductor layer side in between the electric conductor layer and the anode 536, and an anolyte 538 having the same composition as the plating liquid 550 or containing 0 to 75 g/L copper ions and 0.6 mol/L or less organic or inorganic acid to a space of the anode 536 side, to fill a space in between the electric conductor layer and the anode 536 with a plating liquid 550 and an anolyte 538; and applying voltage between the conductor layer and the anode 536 to plate the surface of the conductor layer.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：在薄型种子层上形成具有优异的面内均匀性的镀膜，此外，具有优异的堵塞精制镶嵌结构的性能。解决方案：该电镀方法包括将电阻器534放置在形成在基板表面的至少一部分上的导电体层和阳极536之间; 将含有25〜75g / L的铜离子和0.4mol / L以上的有机或无机酸的电镀液550引入到导电体层和阳极536之间的导体层侧的空间中，并且阳极电解液538具有与电镀液550相同的组成或含有0〜75g / L的铜离子和0.6mol / L以下的有机或无机酸添加到阳极536侧的空间，填充导体层和具有电镀液体550和阳极电解液538的阳极536; 并且在导体层和阳极536之间施加电压以对导体层的表面进行平板化。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2005029830A Plating device and plating method 审中-公开
标题翻译：镀层装置和镀层方法
公开(公告)号：JP2005029830A
公开(公告)日：2005-02-03
申请号：JP2003195406
申请日：2003-07-10
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KURASHINA KEIICHI , NAGAI MIZUKI , YAMAMOTO AKIRA , KANDA HIROYUKI , MISHIMA KOJI
IPC分类号： C25D7/12 , C25D5/06 , C25D5/08 , C25D5/18 , C25D5/22 , C25D17/00 , C25D17/14 , C25D21/00 , C25D21/12 , H01L21/00 , H01L21/02 , H01L21/288 , H01L21/677 , H01L21/768
CPC分类号： H01L21/288 , C25D5/06 , C25D5/08 , C25D7/123 , C25D17/001 , H01L21/02068 , H01L21/02074 , H01L21/02087 , H01L21/0209 , H01L21/2885 , H01L21/67028 , H01L21/6708 , H01L21/67109 , H01L21/6723 , H01L21/67751 , H01L21/7684 , H01L21/76849 , H01L21/76877
摘要： PROBLEM TO BE SOLVED: To easily form a plating film of satisfactory film quality whose surface is flat regardless of the variation in wiring pattern shape. SOLUTION: The plating device comprises: a substrate stage 504 holding a substrate W; a cathode part 506 provided with a sealing material 514 abutted on the peripheral part of the face to be plated in the substrate held by the substrate stage and sealing the peripheral part in a watertight way and a cathode electrode 512 contacted with the substrate and allowing the same to pass through; an electrode head 502 arranged freely attachably and detachably to the face to be plated in the substrate in a state of being confronted therewith and provided with an anode 526 and a porous body 528 having water retainability up and down; a pressing mechanism 540 pressing the porous body against the face to be plated in the substrate held by the substrate stage by optional force; and a driving mechanism, while bringing the porous body into contact with the face to be plated in the substrate held by the substrate stage, relatively driving the porous body and the substrate. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了容易地形成表面平坦的具有令人满意的膜质量的镀膜，而与布线图案形状的变化无关。电镀装置包括：保持基板W的基板台504; 设置有密封材料514的阴极部分506，所述阴极部分506抵靠在被基板台保持的基板的要被镀覆的外周的周边部分上，并以水密方式密封周边部分和与基板接触的阴极电极512，一样通过; 电极头502以面对的状态自由地安装和可拆卸地布置在基板中的电极头502上，并且设置有阳极526和上下具有保水性的多孔体528; 按压机构540，通过任意的力将多孔体压靠在被基板台保持的基板内的被镀面上; 以及驱动机构，同时使多孔体与被基板台保持的基板中的被镀面接触，相对地驱动多孔体和基板。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2004339579A Electrolytic treatment device and method 审中-公开
公开(公告)号：JP2004339579A
公开(公告)日：2004-12-02
申请号：JP2003138521
申请日：2003-05-16
申请人： Ebara Corp , 株式会社荏原製作所
发明人： MISHIMA KOJI , NAMIKI KEISUKE , HOUDAI MASAO , KUNISAWA JUNJI , MAKINO NATSUKI , FUKUNAGA YUKIO
IPC分类号： C25D7/12 , C25B9/00 , C25D17/00 , C25D17/02 , C25D19/00 , C25D21/00
CPC分类号： C25D17/00 , C25D17/02
摘要： PROBLEM TO BE SOLVED: To provide an electrolitic treatment device capable of producing products with various specifications in a state of the highest productivity while considering the quantity of the production, reducing production cost, and being applied even to the miniaturization of wirings flexibly.
SOLUTION: The electrolytic treatment device is equipped with: an electrolytic treatment unit 30 provided with a substrate holding part 40 of holding a substrate; and a counter plate 50 arranged at a position confronted with the substrate held by the substrate holding part 40; an elecyrolytic treatment unit 30 in which power is fed to the space between the substrate held by the substrate holding part 40 and the counter plate while an electrolytic solution is filled therein, and electrolytic treatment is performed; and a plurality of electrolytic solution feeding equipments 32a and 32b of feeding different kinds of electrolytic solutions. The electrolytic treatment unit 30 is constituted so as to alternatively be connected to one of the electrolytic solution feeding equipments 32a and 32b.
COPYRIGHT: (C)2005,JPO&NCIPI

6. 发明专利

JP2004263202A Plating method and plating apparatus 有权
公开(公告)号：JP2004263202A
公开(公告)日：2004-09-24
申请号：JP2003015236
申请日：2003-01-23
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KURASHINA KEIICHI , NAMIKI KEISUKE , NAKADA TSUTOMU , MISHIMA KOJI
IPC分类号： C25D7/12 , C25D13/22 , C25D17/14 , H01L21/288 , H01L21/3205
摘要： PROBLEM TO BE SOLVED: To provide a technology for selectively depositing a plating metal such as copper into a fine channel and/or a micropore having a circuit form by a mechanical or electrochemical means.
SOLUTION: The electroplating method comprises forming an electroconductive layer on a substrate having the fine channel and/or the micropore, supplying a plating solution onto the electroconductive layer through a porous contact body to plate the metal, and filling the fine channel and/or the micropore with the metal. The plating method comprises relating the change of the condition of applied voltage with the change of the pushing condition of the porous contact body. The plating apparatus therefor is disclosed.
COPYRIGHT: (C)2004,JPO&NCIPI

7. 发明专利

JP2004225119A Plating method and plating apparatus used for this method 有权
标题翻译：用于本方法的镀层方法和镀层装置
公开(公告)号：JP2004225119A
公开(公告)日：2004-08-12
申请号：JP2003015235
申请日：2003-01-23
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KURASHINA KEIICHI , SAHODA TAKESHI , NAKADA TSUTOMU , MISHIMA KOJI
IPC分类号： C25D7/12 , C25D17/14 , C25D21/12 , H01L21/288 , H01L21/3205
摘要： PROBLEM TO BE SOLVED: To produce a technique for selectively depositing copper plating into circuit-shaped fine groove and fine holes with a mechanical means.
SOLUTION: In an electric-plating method, with which an electric conductive layer is formed on a substrate having the fine groove and/or the fine holes and metal is filled up into the fine groove and/or the fine holes by performing the metal plating on this electric conductive layer, the metal-plating is performed while bringing a hard contacting surface having high flatness degree and a contacting body having fine penetrated holes possible to pass the plating solution, into contact with an electric conductive layer. Further, in the plating apparatus having a plating vessel for holding plating solution, an anode, a holding means for giving cathodic potential while holding the substrate having the fine groove and/or the fine holes formed as the electric conductive layer and a power source, the hard conducting surface having high flatness which can supply the plating solution while bringing into contact with the electric conductive layer on the substrate, and the contacting body having fine penetrating holes possible to pass through the plating solution, are disposed between an anode and the held substrate.
COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：制造一种用机械方式将铜镀层选择性地沉积到电路形细槽和细孔中的技术。解决方案：在电镀方法中，在具有细槽的基板和/或细孔和金属上形成导电层的电镀方法通过执行以下方式填充到细槽和/或细孔中在该导电层上的金属电镀，进行金属电镀，同时使具有高平坦度的硬接触表面和具有细孔的接触体可能通过电镀液与导电层接触。此外，在具有用于保持电镀液的电镀容器的电镀装置中，阳极，保持具有形成为导电层的微细孔的基板和/或形成为导电层的微细孔的电源的电源，所述硬导电表面具有高的平坦度，其能够在与基板上的导电层接触的同时供应电镀液，并且具有可能穿过电镀液的细孔的接触体设置在阳极和被保持的基质。版权所有（C）2004，JPO＆NCIPI

8. 发明专利

JP2004035926A Plating apparatus and plating method 有权
公开(公告)号：JP2004035926A
公开(公告)日：2004-02-05
申请号：JP2002192535
申请日：2002-07-01
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： MISHIMA KOJI , IDE KUNIHITO , CHIKAMORI YUSUKE , NOMURA KAZUFUMI , KATSUOKA SEIJI , KUNISAWA JUNJI , MUKOYAMA YOSHITAKA , MAKINO NATSUKI , MATSUDA TETSURO , KANEKO HISAFUMI
IPC分类号： C25D7/12 , C25D5/08 , C25D17/00
摘要： PROBLEM TO BE SOLVED: To provide a plating apparatus which does not require to monitor a liquid composition and accessory equipment therefor, and reduces the cost, and to provide a plating method.
SOLUTION: The electrolytic plating apparatus 10 has a substrate treatment region 20 for contacting the surface to be plated of a substrate with a plating solution, and plating it therein. The substrate treatment region 20 is provided with an inflow part 100 for receiving a plating liquid to be used for plating therethrough, and an outflow part 120 for draining the plating liquid used for the plating process therethrough. The apparatus has such a structure as not to return the plating liquid drained from the outflow part 100 to the substrate treatment region 20. Then, the apparatus does not require to monitor the liquid composition, because of having such a structure so as not to use a plating liquid once used at all.
COPYRIGHT: (C)2004,JPO

9. 发明专利

JP2007117842A Method and apparatus for removing nitrogen of high concentration organic waste water 有权
标题翻译：去除高浓度有机废水的氮的方法和装置
公开(公告)号：JP2007117842A
公开(公告)日：2007-05-17
申请号：JP2005311339
申请日：2005-10-26
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KATSURA YOUSEI , YAMAGUCHI AKIRA , MISHIMA KOJI
IPC分类号： C02F3/34 , C02F3/28
CPC分类号： Y02W10/12
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus for removing nitrogen of organic waste water which can stably and drastically reduce running cost over the entire part of treatment as compared to the conventional method. SOLUTION: The method and apparatus for treating the nitrogen-containing organic waste water are characterized in that nitrogen removal is performed by introducing water to be treated into a denitrifying tank and thereafter the treatment liquid is introduced from the nitrification tank in an amount smaller than the amount of the water to be treated into the denitrifying tank to oxidize the ammonia nitrogen in the water to be treated to nitrous acid or nitrate nitrogen, thence the nitrified liquid is returned to the denitrifying tank. After the treatment liquid from the denitrifying tank is subjected to solid-liquid separation, the water to be treated is introduced into a nitrous acid conversion tank where the ammonia nitrogen in the water to be treated is partly converted to nitrite nitrogen and thereafter the water to be treated is supplied to the denitrifying tank of a post stage where the ammonia nitrogen and the nitrate nitrogen are preferably subjected to denitrification treatment as gaseous nitrogen in the presence of autotrophic denitrifying bacteria to obtain the treated water. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种与常规方法相比，可以在整个处理中稳定且显着降低运行成本的有机废水中除氮的方法和装置。解决方案：用于处理含氮有机废水的方法和装置的特征在于，通过将待处理的水引入反硝化罐中进行除氮，然后将处理液从硝化罐中引入量小于待处理到反硝化池中的水的量，以将待处理的水中的氨氮氧化成亚硝酸或硝酸氮，然后将硝化液体返回到脱氮罐中。在将来自脱氮罐的处理液进行固液分离后，将待处理的水引入到亚硝酸转化槽中，其中待处理水中的氨氮部分转化为亚硝酸盐氮，然后将水转化为在自养反硝化细菌的存在下，将氨氮和硝酸氮优选作为气态氮进行脱氮处理的后期的脱氮罐中进行处理，得到处理后的水。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2005248328A Substrate treatment apparatus 有权
标题翻译：基板处理设备
公开(公告)号：JP2005248328A
公开(公告)日：2005-09-15
申请号：JP2005066317
申请日：2005-03-09
申请人： Ebara Corp , 株式会社荏原製作所
发明人： MISHIMA KOJI , INOUE HIROAKI , MAKINO NATSUKI , NAKAMURA KENJI , MATSUMOTO MORIHARU
IPC分类号： C23C18/31 , C25D5/06 , C25D7/12 , C25D17/00 , C25D19/00
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus which can be made compact and low-cost, and in which shift from one substrate treatment process to next substrate treatment process is smoothly performed in a short period of time and a stable substrate treatment process can be obtained.
SOLUTION: The substrate treatment apparatus includes: a substrate holding means 36 (a substrate treatment section 20) which holds the substrate W; and substrate treatment heads 30 (first and second anode heads 30-1, and 2) which are movable between the surface to be treated of the substrate W and a retreating section 22 and is equipped with a substrate treating liquid supplying mechanism. A plurality of the substrate treatment apparatus (plating units) 12 which perform the substrate treatment by transferring the substrate treatment heads 30 onto the the substrates W held on the substrate holding means 36 are installed within a single apparatus.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种可以制造得紧凑且低成本的基板处理装置，并且其中从一个基板处理工艺到下一个基板处理工艺的转变在短时间内平稳地进行并且稳定可以获得基板处理工艺。解决方案：基板处理装置包括：保持基板W的基板保持装置36（基板处理部20）以及能够在基板W的待处理表面和退避部22之间移动的基板处理头30（第一和第二阳极头30-1,2），并且配备有基板处理液供给机构。通过将基板处理头30转印到保持在基板保持装置36上的基板W上进行基板处理的多个基板处理装置（电镀单元）12安装在单个装置内。版权所有（C）2005，JPO＆NCIPI

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