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1. 发明专利

JP2005264339A Electrolytic treatment method and apparatus therefor 审中-公开
标题翻译：电解处理方法及其设备
公开(公告)号：JP2005264339A
公开(公告)日：2005-09-29
申请号：JP2005161668
申请日：2005-06-01
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： MATSUDA TETSURO , KANEKO HISAFUMI , MISHIMA KOJI , MAKINO NATSUKI , KUNISAWA JUNJI , INOUE HIROAKI , KIMURA NORIO , ODAGAKI MITSUKO , TSUJIMURA MANABU
IPC分类号： C25D7/12 , C25D17/00 , C25D17/10 , C25D17/12 , C25F7/00
摘要： PROBLEM TO BE SOLVED: To uniformly electrolyze over a substrate without varying thickness or materials of a conductive layer or an electrolytic solution such as a plating liquid.
SOLUTION: The apparatus is equipped with: a substrate mount 30 where a substrate W to be treated is horizontally mounted with the top surface facing upward; a lip seal 34 to be in contact with the surface peripheral edge of the objective substrate W mounted on the substrate mount 30 and to seal the peripheral edge; a contact point 36 disposed outside the lip seal 34 and in contact with the peripheral edge of the objective substrate W mounted on the substrate mount 30 so as to introduce the potential of either a cathode or an anode into the substrate W; the other electrode 38 disposed above the objective substrate W mounted on the substrate mount 30; and a high resistance structure 40 disposed between the objective substrate W mounted on the substrate mount 30 and the other electrode 38. Electrolytic treatment is carried out by filling the space between the objective substrate W mounted on the substrate mount 30 and the other electrode 38 with an electrolytic solution 10.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：在不改变导电层或诸如电镀液的电解液的厚度或材料的基板上均匀地电解。解决方案：该装置配备有：基板安装件30，其中要处理的基板W水平安装，顶表面面向上; 唇形密封件34，其与安装在基板安装件30上的物镜基板W的表面周缘接触并密封周边边缘; 接触点36，其设置在唇形密封件34的外侧并与安装在基板安装件30上的物镜基板W的周缘接触，以将阴极或阳极的电位引入基板W; 设置在安装在基板安装件30上的物镜基板W上方的另一电极38; 以及设置在安装在基板安装件30上的目标基板W与另一个电极38之间的高电阻结构40.电解处理通过将安装在基板安装件30上的目标基板W与另一个电极38之间的空间填充，电解液10.版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2010038853A Method and device for inspecting substrate surface 有权
标题翻译：用于检查基板表面的方法和装置
公开(公告)号：JP2010038853A
公开(公告)日：2010-02-18
申请号：JP2008205097
申请日：2008-08-08
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： NAITO YOSHIHIKO , KIMURA NORIO , TERAO KENJI , HATAKEYAMA MASAKI , ITO MASAMITSU
IPC分类号： G01N23/225 , G03F1/84 , G03F1/86
CPC分类号： G01N23/203 , G01N2223/652
摘要： PROBLEM TO BE SOLVED: To provide a method and device for inspecting a substrate surface for easily and accurately detecting a defect existing on the substrate surface using cell inspection. SOLUTION: This method for inspecting the substrate surface for detecting the defect 32 on the substrate 10 containing a plurality of materials on the surface includes an electron beam irradiating process of irradiating the surface of the substrate with the electron beam to which a landing energy is set so that the contrast of at least two kinds of materials of the plurality of materials is within a predetermined range, a process of detecting an electron generated from the substrate and acquiring a surface image of the substrate while a pattern made of the two kinds of materials is eliminated or thinned, and a process of detecting, as the defect 32, an image of a target having a contrast distinguishable from the background image in the obtained surface image. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于检查基板表面的方法和装置，以便容易且准确地检测使用电池检查存在于基板表面上的缺陷。解决方案：用于检测在表面上含有多种材料的基板10上的缺陷32的检测用基板表面的方法包括电子束照射工序，用电子束照射基板的表面，能量被设定为使得多种材料中的至少两种材料的对比度在预定范围内，检测从衬底产生的电子并获取衬底的表面图像的过程，同时由两个材料形成的图案将各种材料消除或变薄，以及作为缺陷32检测在所获得的表面图像中具有与背景图像可辨别的对比度的对象的图像的处理。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2007308807A Electrolytic treating device and electric field state control method 审中-公开
标题翻译：电解处理装置和电场状态控制方法
公开(公告)号：JP2007308807A
公开(公告)日：2007-11-29
申请号：JP2007213896
申请日：2007-08-20
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： MAKINO NATSUKI , MISHIMA KOJI , KUNISAWA JUNJI , INOUE HIROAKI , KIMURA NORIO , ODAGAKI MITSUKO , TSUJIMURA MANABU , MATSUDA TETSURO , KANEKO HISAFUMI , MORITA TOSHIYUKI , OKUMURA KATSUYA
IPC分类号： C25D17/10 , C25D7/12 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide an electrolytic treating device which makes it possible to obtain the in-plane distribution of a desired plating film thickness by positively controlling the electric field state of the surface of a substrate to be treated and an electric field state control method for the same.
SOLUTION: A plating liquid 10 is filled between an anode 38 and the substrate W to be treated and a high-resistance structure 4 having the electrical conductivity lower than the electrical conductivity of the plating liquid 10 is installed between the anode 38 and the substrate W. The electric field on the surface of the substrate W is controlled by adjusting the thickness of the high resistant structure 4 or the shape of the high resistant structure 4 on a plane surface.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种电解处理装置，其可以通过积极地控制待处理的基板的表面的电场状态和电流来获得期望的镀膜厚度的面内分布场状态控制方法相同。解决方案：在阳极38和待处理的基板W之间填充电镀液10，将具有比电镀液10的导电性低的导电率的高电阻结构4安装在阳极38和通过在平面上调整高阻结构体4的厚度或耐高压结构体4的形状来控制基板W的表面上的电场。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2006339665A Apparatus for manufacturing semiconductor substrate 审中-公开
标题翻译：制造半导体基板的装置
公开(公告)号：JP2006339665A
公开(公告)日：2006-12-14
申请号：JP2006169432
申请日：2006-06-19
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： KIMURA NORIO , MISHIMA KOJI , KUNISAWA JUNJI , MAKINO NATSUKI , TSUJIMURA MANABU , MATSUDA TETSURO , KANEKO HISAFUMI , OKUMURA KATSUYA
IPC分类号： H01L21/288 , C25D7/12 , C25D19/00 , H01L21/304 , H01L21/677
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a semiconductor substrate suitable for a small-scaled manufacturing line, which can produce various products in small amounts, cope with a large change of the number of products, produce products having a short product life, and is capable of changing the function flexibly or updating the apparatus. SOLUTION: The apparatus for manufacturing the semiconductor substrate is equipped with a loader/unloader 120, a plurality of treatment units such as a plating film-forming film unit 113, and a transfer mechanism (robots 131-134) which transfers the semiconductor substrate between the units. The mounting portion of each unit has a guide. Each unit can be loaded to the apparatus for manufacturing the semiconductor substrate, or removed from the apparatus for manufacturing the semiconductor substrate, and exchanged for other units, by moving along the guide. The apparatus for manufacturing the semiconductor substrate is comprised by freely combining the units needed in the semiconductor manufacturing processes. And the units performing distinct treatments in the apparatus for manufacturing the semiconductor substrate can be exchanged each other. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供适合于能够少量生产各种产品的适合于小规模生产线的半导体基板的设备，可以应对产品数量的大量变化，生产具有产品寿命短，并且能够灵活地改变功能或更新设备。解决方案：用于制造半导体衬底的装置装备有装载器/卸载器120，多个处理单元如镀膜形成膜单元113和转移机构（机器人131-134）半导体衬底之间的单元。每个单元的安装部分都有一个导轨。每个单元可以被加载到用于制造半导体衬底的装置中，或者从用于制造半导体衬底的装置中移除，并且通过沿导向件移动而被交换到其它单元。用于制造半导体衬底的装置包括通过自由组合半导体制造工艺中所需的单元。并且在用于制造半导体衬底的装置中执行不同处理的单元可以彼此交换。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2004312036A Device and method of polishing 有权
标题翻译：装置和抛光方法
公开(公告)号：JP2004312036A
公开(公告)日：2004-11-04
申请号：JP2004177568
申请日：2004-06-15
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： OKUMURA KATSUYA , AOKI RIICHIRO , YAJIMA HIROMI , KODERA MASAKO , MISHIMA SHIRO , SHIGETA ATSUSHI , HIROSE MASAYOSHI , KIMURA NORIO , ISHIKAWA SEIJI
IPC分类号： B24B37/04 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a device and a method of polishing capable of carrying out a clean and dried object after the object for polishing is polished, cleaned and dried. SOLUTION: There are provided a polishing device which carries out the clean and dried object S for polishing, after the object S for polishing is carried in and cleaned, wherein the polishing sections 13, 14 which polish the object S, a cleaning section 15 which cleans and dries the object S for polishing after polished and a thickness gauge which measures the thickness of the object S for polishing. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供抛光，清洁和干燥抛光后的抛光对象的清洁和干燥物体的抛光装置和方法。提供一种抛光装置，其在进行用于抛光的物体S被进行和清洁之后，执行用于抛光的清洁和干燥物体S，其中抛光物体S的抛光部分13,14清洁清洗干燥被抛光对象物S的部分15和测量被研磨物S的厚度的厚度计。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JPH11277403A Polishing device 失效
标题翻译：抛光装置
公开(公告)号：JPH11277403A
公开(公告)日：1999-10-12
申请号：JP9697198
申请日：1998-03-26
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： KIMURA NORIO , ISHII YU , TATEYAMA YOSHIKUNI
IPC分类号： B24B1/00 , B24B53/007 , B24B53/017 , H01L21/304 , B24B37/00
CPC分类号： B24B53/017 , B24B53/02
摘要： PROBLEM TO BE SOLVED: To provide a polishing device in which both a contact type dressing unit using a brush or a diamond dresser and a non-contact type dressing unit using fluid jet are incorporated, and a conditioning method for a polishing cloth in this polishing device. SOLUTION: In a polishing device which is provided with a turntable 20 to which a polishing cloth 5 is attached, and a top ring 3, and which presses a semiconductor wafer 2 intervening between the turntable 20 and the top ring 3 under a specified pressure to polish the semiconductor wafer 2, a first dressing unit having a contact type dresser 10 for performing dressing of the polishing cloth 5 in contact with the surface of the polishing cloth 5, and a second dressing unit 16 having a non-contact type dresser 15 for performing dressing by spraying fluid jet to the surface of the polishing cloth 5, are provided.
摘要翻译：要解决的问题：提供一种研磨装置，其中包括使用刷子或金刚石修整器的接触式修整单元和使用流体射流的非接触式修整单元两者，以及在该抛光中的抛光布的调节方法设备。解决方案：在设置有安装有抛光布5的转盘20和顶环3的抛光装置中，并且在指定压力下将介于转台20和顶环3之间的半导体晶片2按压到抛光半导体晶片2，第一修整单元具有接触型修整器10，用于进行与抛光布5的表面接触的抛光布5的修整;以及第二修整单元16，其具有非接触型修整器15，用于提供了通过将喷射流体喷射到抛光布5的表面进行修整。

7. 发明专利

JP2009045679A Polishing device 审中-公开
标题翻译：抛光装置
公开(公告)号：JP2009045679A
公开(公告)日：2009-03-05
申请号：JP2007212497
申请日：2007-08-16
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KIMURA NORIO , ITO KENYA , TAKAHASHI YOSHIMIZU , SEKI MASAYA
IPC分类号： B24B21/18 , B24B9/00 , B24B21/00
CPC分类号： B24B9/065
摘要： PROBLEM TO BE SOLVED: To provide a polishing device capable of polishing the circumferential portion of a substrate at a high polishing rate. SOLUTION: This polishing device for polishing the circumferential portion (bevel portion, notch portion, edge cut portion) of the substrate W by sliding a polishing tool 41 on the circumferential portion. The polishing device comprises a substrate-holding portion 20 for holding the substrate W, and a polishing head 42 for polishing the circumferential portion of the substrate W held by the substrate-holding portion 20 by using the polishing tool 41. The polishing head 42 has a press pad 50 for pressing the polishing tool 41 against the circumferential portion of the substrate W, and a linear motor 90 for moving the press pad 50 reciprocally. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够以高抛光速率抛光基板的圆周部分的抛光装置。解决方案：该抛光装置用于通过在周向部分上滑动研磨工具41来研磨衬底W的周向部分（斜面部分，切口部分，边缘切割部分）。抛光装置包括用于保持基板W的基板保持部分20和用于通过使用抛光工具41抛光由基板保持部分20保持的基板W的圆周部分的抛光头42.抛光头42具有用于将抛光工具41压靠在基板W的圆周部分上的压板50以及用于使压板50往复移动的直线电动机90。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2009004161A Method of removing foreign matter on sample surface and charged particle apparatus 有权
标题翻译：在样品表面和充电颗粒装置上移除外来物质的方法
公开(公告)号：JP2009004161A
公开(公告)日：2009-01-08
申请号：JP2007162528
申请日：2007-06-20
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NAITO YOSHIHIKO , KIMURA NORIO , HATAKEYAMA MASAKI
IPC分类号： H01J37/20 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a method of removing foreign matter on a sample surface which detects foreign matter on the sample surface and removes the detected foreign matter on the sample surface when having detected the foreign matter, and to provide a charged particle beam apparatus used for this method. SOLUTION: The method of removing foreign matter 160 on the sample 150 surface irradiated with a charged particle beam includes: a step of acquiring charge information on the sample surface; a step of detecting the foreign matter on the sample surface based on the acquired charge information; a step of moving the sample in a horizontal direction; and a step of charging adsorption electrodes 50, 50a, 50b facing and close to the sample surface with a polarity different from a charge polarity of the foreign matter, and thereby electrostatically adsorbing the foreign matter which approaches the adsorption electrodes. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种在检测到异物时检测样品表面上的异物的样品表面上除去杂质并除去检测到的异物的方法，并且提供带电的用于该方法的粒子束装置。解决方案：用带电粒子束照射的样品150表面上去除异物160的方法包括：获取样品表面上的电荷信息的步骤; 基于获取的电荷信息检测样品表面上的异物的步骤; 沿水平方向移动样品的步骤; 以与异物的电荷极性不同的方式对与样品表面贴合的吸附电极50,50a，50b进行充电的步骤，从而静电吸附接近吸附电极的异物。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2007050506A Apparatus for electrochemical machining 审中-公开
标题翻译：电化学加工设备
公开(公告)号：JP2007050506A
公开(公告)日：2007-03-01
申请号：JP2006219808
申请日：2006-08-11
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KUMEGAWA MASAYUKI , KIMURA NORIO , FUKUNAGA YUKIO , MUTSUHIRA KATSUYUKI
IPC分类号： B23H3/00 , B23H3/04 , B23H3/10
CPC分类号： C25D17/001 , C25D17/002 , C25D17/02
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for electrochemical machining, which apparatus can flatten the surface of a metallic film at a low machining pressure, the metallic film being arranged on a substrate and having minute undulations, and further can machine the metallic film at a uniform machining speed over the whole area of the metallic film.
SOLUTION: The apparatus for electrochemical machining comprises a current supplying electrode 31 and a machining electrode 32, a substrate carrier 11 for holding the substrate W, a first supply passage 51 for supplying a first electrolytic solution between the current supplying electrode 31 and the substrate W, a second supply passage 52 for supplying a second electrolytic solution between the machining electrode 32 and the substrate W, an insulating body 36 for electrically insulating the first electrolytic solution and the second electrolytic solution, a table 12 on which the current supplying electrode 31, the machining electrode 32, and the insulating body 36 are arranged, an electric power source 33 for applying electric voltage between the current supplying electrode 31 and the machining electrode 32, and a relative motion mechanism 17 for relatively moving the table 12 and the substrate carrier 11 in the state that the insulating body 36 is brought into contact with the metallic film 6.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种用于电化学加工的装置，该装置可以在低加工压力下使金属膜的表面平坦化，金属膜布置在基板上并且具有微小的起伏，并且还可以加工金属膜在金属膜的整个区域上以均匀的加工速度。解决方案：用于电化学加工的装置包括供电电极31和加工电极32，用于保持基板W的基板载体11，用于在供电电极31和供电电极31之间提供第一电解液的第一供应通道51 基板W，用于在加工电极32和基板W之间供给第二电解液的第二供给通路52，将第一电解液和第二电解液电绝缘的绝缘体36，供给电流布置电极31，加工电极32和绝缘体36，用于在供电电极31和加工电极32之间施加电压的电源33和用于相对移动台12的相对运动机构17和基板载体11处于绝缘体36与金属接触的状态版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2006104581A Electroless plating apparatus and electroless plating method 审中-公开
标题翻译：电沉积装置和电镀法
公开(公告)号：JP2006104581A
公开(公告)日：2006-04-20
申请号：JP2005365630
申请日：2005-12-19
申请人： Ebara Corp , 株式会社荏原製作所
发明人： HONGO AKIHISA , MISHIMA KOJI , KIMURA NORIO , ABE KENICHI , O CHIKAAKI
IPC分类号： C23C18/31 , H05K3/18
摘要： PROBLEM TO BE SOLVED: To provide an electroless plating apparatus which can easily form a plated film having more uniform thickness on a surface, to be plated, of a material to be plated, and an electroless plating method. SOLUTION: In the plating apparatus comprising a holding portion 10 for holding a material W to be plated, and a plating bath 24 for holding a plating liquid 22, wherein the material W to be plated is brought into contact with the plating liquid 22 in the plating bath 24 to be plated, the holding portion 10 has a heating portion 14. COPYRIGHT: (C)2006,JPO&NCIPI

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