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1. 发明授权

US5740009A Apparatus for improving wafer and chuck edge protection 失效
标题翻译：用于改善晶片和卡盘边缘保护的装置
公开(公告)号：US5740009A
公开(公告)日：1998-04-14
申请号：US758531
申请日：1996-11-29
申请人： Bryan Pu , Hongching Shan , Kuang-Han Ke , Michael Welch , Semyon Sherstinsky , Alfred Mak , Ling Chen , Sue Zhang , Leonel Arturo Zuniga , Samuel C. Wilson
发明人： Bryan Pu , Hongching Shan , Kuang-Han Ke , Michael Welch , Semyon Sherstinsky , Alfred Mak , Ling Chen , Sue Zhang , Leonel Arturo Zuniga , Samuel C. Wilson
IPC分类号： H01L21/683 , H01L21/687 , H02N13/00
CPC分类号： H01L21/68735 , H01L21/6831 , H01L21/6833 , H02N13/00
摘要： Apparatus for retaining a wafer having improved wafer and chuck edge protection, contains an protection ring that circumscribes a pedestal and is biased to be in constant contact with the backside of the wafer. A biasing element uniformly biases the protection ring into contact with the circumferential edge of the wafer. The protection ring has an annular plan form that circumscribes an electrostatic chuck for retaining the wafer in a stationery position. Vertical travel of the ring is restricted by a hard stop that is formed by a portion of a focus ring which overhangs the protection ring. After a wafer is placed upon the chuck and the chucking force enabled, the chucking force easily overcomes the bias force upon the protection ring and the wafer rests upon the chuck support surface. The protection ring contacts the backside of the wafer to ensure that pedestal and electrostatic chuck are not exposed to the plasma and, when a silicon protection ring is used, the effective area of the wafer is extended beyond the physical dimensions of the wafer to facilitate a more uniform plasma distribution over the wafer.
摘要翻译：用于保持具有改进的晶片和卡盘边缘保护的晶片的装置包含限定基座的保护环，并被偏置以与晶片的背面恒定接触。偏置元件均匀地将保护环偏压成与晶片的周缘接触。保护环具有环形平面形式，其环绕静电卡盘以将晶片保持在文具位置。环的垂直行程受到由突出于保护环上的聚焦环的一部分形成的硬停止的限制。在将晶片放置在卡盘上并且夹持力能够实现之后，夹紧力容易地克服保护环上的偏压力并且晶片搁置在卡盘支撑表面上。保护环接触晶片的背面以确保基座和静电卡盘不暴露于等离子体，并且当使用硅保护环时，晶片的有效面积延伸超过晶片的物理尺寸以便于在晶片上更均匀的等离子体分布。

2. 发明授权

US5673922A Apparatus for centering substrates on support members 失效
标题翻译：用于将基板对准支撑构件的装置
公开(公告)号：US5673922A
公开(公告)日：1997-10-07
申请号：US403141
申请日：1995-03-13
申请人： Semyon Sherstinsky , Alfred Mak , Leonel Arturo Zuniga , Ling Chen
发明人： Semyon Sherstinsky , Alfred Mak , Leonel Arturo Zuniga , Ling Chen
IPC分类号： B23Q3/18 , H01L21/68 , B25B11/00
CPC分类号： B23Q3/186 , H01L21/68 , Y10T279/23 , Y10T279/26
摘要： A semiconductor processing chamber includes a substrate support member on which the substrate is positioned during processing in the chamber. To align the substrate on the substrate support member, an alignment member extends about the perimeter of the substrate receiving portion of the support member. The alignment member includes an alignment face thereon, which urges a substrate into alignment with the substrate receiving face of the support member as the substrate is deposited on the support member. The alignment member may also include a recessed portion, which ensures the presence of a gap between the edge of the substrate and the support member when the substrate contacts the support member.
摘要翻译：半导体处理室包括衬底支撑构件，衬底在室中的处理期间被放置在衬底支撑构件上。为了将衬底对准衬底支撑构件，对准构件围绕支撑构件的衬底容纳部分的周边延伸。对准构件包括其上的对准面，当衬底沉积在支撑构件上时，该对准面将衬底与支撑构件的衬底接收面对准。对准构件还可以包括凹陷部分，当凹陷部分基板接触支撑构件时，该部分确保在基板的边缘和支撑构件之间存在间隙。

3. 发明授权

US5316278A Clamping ring apparatus for processing semiconductor wafers 失效
标题翻译：用于处理半导体晶圆的夹紧环装置
公开(公告)号：US5316278A
公开(公告)日：1994-05-31
申请号：US947212
申请日：1992-09-18
申请人： Semyon Sherstinsky , Mei Chang , Charles C. Harris , Alfred Mak , James F. Roberts , Simon W. Tam , Wen T. Chang
发明人： Semyon Sherstinsky , Mei Chang , Charles C. Harris , Alfred Mak , James F. Roberts , Simon W. Tam , Wen T. Chang
IPC分类号： H01L21/687 , B25B1/00
CPC分类号： H01L21/68721 , Y10S269/903
摘要： An improved clamping ring apparatus is disclosed comprising a clamping ring means for yieldably engaging a generally circular semiconductor wafer to peripherally clamp the wafer to a support pedestal to provide a peripheral seal between the wafer and the surface of the pedestal facing the wafer, adjacent the generally circular end edge of the wafer by providing a central generally circular opening in the clamping ring and a series of slots which radially extend outwardly from the central opening in the clamping ring means to thereby divide the inner portion of the clamping ring means into a series of yieldable fingers inwardly extending toward the central opening in the clamping ring means.In one embodiment, the sidewalls of the slots are slanted with respect to the planar surface of the clamping ring means at an angle sufficient, with respect to the thickness of the clamping ring means and the width of the slot,, to prevent a ray or a particle from a plasma, traveling in a direction perpendicular to the plane of the surface of the clamping ring means from striking surfaces underlying the clamping ring means, through the slot.
摘要翻译：公开了一种改进的夹紧环装置，其包括夹紧环装置，用于可屈服地接合大致圆形的半导体晶片以将晶片周边夹持到支撑基座，以在晶片与面对晶片的基座的表面之间提供周边密封，通过在夹紧环中提供中心大致圆形的开口，以及从夹紧环装置中的中心开口径向向外延伸的一系列槽，从而将夹紧环装置的内部分成一系列可伸缩的手指向内延伸朝向夹紧环装置中的中心开口。在一个实施例中，槽的侧壁相对于夹紧环装置的平坦表面以相对于夹紧环装置的厚度和槽的宽度足够的角度倾斜以防止光线或来自等离子体的颗粒通过狭槽从垂直于夹紧环装置的表面的平面的方向通过夹紧环装置下方的冲击表面行进。

4. 发明授权

US5671117A Electrostatic chuck 失效
标题翻译：静电吸盘
公开(公告)号：US5671117A
公开(公告)日：1997-09-23
申请号：US626667
申请日：1996-03-27
申请人： Semyon Sherstinsky , Shamouil Shamouilian , Manoocher Birang , Alfred Mak , Simon W. Tam
发明人： Semyon Sherstinsky , Shamouil Shamouilian , Manoocher Birang , Alfred Mak , Simon W. Tam
IPC分类号： B23Q3/15 , C23C16/458 , H01L21/00 , H01L21/683 , H02N13/00
CPC分类号： H02N13/00 , C23C16/4586 , H01L21/67109 , H01L21/6831 , H01L21/6833 , Y10T279/23 , Y10T29/49117
摘要： An electrostatic chuck for securing a semiconductor wafer on a pedestal having multiple apertures for the introduction of cooling gas beneath the wafer. The multiple apertures reduce overheating near the wafer edge and provide lower temperature gradients across the wafer. The wafer is held by electrostatic force against a laminate of an electrode layer sandwiched between two dielectric layers in such a way that the laminate presents a planar surface to the wafer for a substantial distance beyond the outer edge of the electrode layer. The laminate construction ensures that a large wafer area beyond the outer edge of the electrode is in contact with the laminate, to minimize cooling gas leakage near the edge, and provides a longer useful life by increasing the path length of dielectric material between the electrode layer and potentially damaging plasma material surrounding the chuck.
摘要翻译：一种用于将半导体晶片固定在具有多个孔的基座上以在晶片下方引入冷却气体的静电卡盘。多个孔径减小晶片边缘附近的过热，并在晶片上提供较低的温度梯度。晶片通过静电力抵抗夹在两个电介质层之间的电极层的层压体，使得层压体在晶片上呈现超过电极层的外边缘相当长的平面。层压结构确保了超过电极外边缘的大的晶片区域与层压体接触，以使边缘附近的冷却气体泄漏最小化，并且通过增加电极层之间的电介质材料的路径长度来提供更长的使用寿命并可能损坏卡盘周围的等离子体材料。

5. 发明授权

US5883778A Electrostatic chuck with fluid flow regulator 失效
标题翻译：带流体流量调节器的静电吸盘
公开(公告)号：US5883778A
公开(公告)日：1999-03-16
申请号：US503790
申请日：1995-07-18
申请人： Semyon Sherstinsky , John F. Cameron , Shamouil Shamouilian , Manoocher Birang , Alfred Mak , Simon W. Tam , Robert E. Ryan
发明人： Semyon Sherstinsky , John F. Cameron , Shamouil Shamouilian , Manoocher Birang , Alfred Mak , Simon W. Tam , Robert E. Ryan
IPC分类号： B23Q3/15 , C23C16/458 , H01L21/00 , H01L21/683 , H02N13/00
CPC分类号： H02N13/00 , C23C16/4586 , H01L21/67109 , H01L21/6831 , H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck 20 of the present invention is capable of maintaining substantially uniform temperatures across a substrate 30. The chuck 20 comprises an electrostatic member 35 that includes (i) an insulator 45 covering an electrode 40, (ii) a substantially planar and conformal contact surface 50 capable of conforming to a substrate 30, and (iii) conduits 105 terminating at the contact surface 50 for providing heat transfer fluid to the contact surface 50. Application of a voltage to the electrode 40 of the electrostatic member 35 electrostatically holds the substrate 30 on the conformal contact surface 50 to define an outer periphery 110 having (1) leaking portions 115 where heat transfer fluid leaks out, and (2) sealed portions 130 where heat transfer fluid substantially does not leak out. A fluid flow regulator 135 is provided for flowing heat transfer fluid at different flow rates through the conduits 105 in the electrostatic member 35 to provide (i) first flow rates of heat transfer fluid through the conduits 105 adjacent to the sealed portions 130 of the outer periphery 110 of the electrostatic member 35, and (ii) second flow rates of heat transfer fluid through the conduits 105 adjacent to the leaking portions 115, the second flow rates being higher than the first flow rates, to maintain substantially uniform temperatures across the substrate 30 held on the chuck 20.
摘要翻译：本发明的静电卡盘20能够在基板30上保持基本均匀的温度。卡盘20包括静电部件35，静电部件35包括（i）覆盖电极40的绝缘体45，（ii）基本上平面和保形接触能够与衬底30相符的表面50，以及（iii）终止于接触表面50处的导管105，用于将热传递流体提供给接触表面50.施加电压到静电构件35的电极40，静电地保持衬底 30，以形成具有（1）泄漏部分115（其中传热流体泄漏）的外周110，以及（2）传热流体基本上不会泄漏的密封部分130。提供流体流量调节器135，用于使不同流速的传热流体流过静电构件35中的管道105，以提供（i）传热流体通过与外部的密封部分130相邻的导管105的第一流量静电构件35的周边110，以及（ii）通过与泄漏部分115相邻的导管105的传热流体的第二流量，第二流速高于第一流速，以保持基本上均匀的温度 30夹在卡盘20上。

6. 发明授权

US5634266A Method of making a dielectric chuck 失效
标题翻译：制造电介质卡盘的方法
公开(公告)号：US5634266A
公开(公告)日：1997-06-03
申请号：US449135
申请日：1995-05-24
申请人： Semyon Sherstinsky , Shamouil Shamouilian , Manoocher Birang , Alfred Mak , Simon W. Tam
发明人： Semyon Sherstinsky , Shamouil Shamouilian , Manoocher Birang , Alfred Mak , Simon W. Tam
IPC分类号： B23Q3/15 , C23C16/458 , H01L21/00 , H01L21/683 , H02N13/00 , H01R43/00
CPC分类号： H02N13/00 , C23C16/4586 , H01L21/67109 , H01L21/6831 , H01L21/6833 , Y10T279/23 , Y10T29/49117
摘要： A method of making a dielectric chuck for securing a semiconductor wafer on a pedestal having multiple apertures for the introduction of cooling gas beneath the wafer. The wafer is held by electrostatic force against a laminate of an electrode layer sandwiched between two dielectric layers in accordance with the method, such that the laminate presents a planar surface to the wafer for a substantial distance beyond the outer edge of the electrode layer. The laminate construction method ensures that a large wafer area beyond the outer edge of the electrode is in contact with the laminate, to minimize cooling gas leakage near the edge, and provides a longer useful life by increasing the path length of dielectric material between the electrode layer and potentially damaging plasma material surrounding the chuck.
摘要翻译：一种制造用于将半导体晶片固定在具有多个孔的基座上用于在晶片下引入冷却气体的电介质卡盘的方法。根据该方法，晶片通过静电力保持在夹在两个电介质层之间的电极层的层压体上，使得层压体在晶片上呈现超过电极层的外边缘相当距离的平坦表面。层叠结构方法确保了超过电极外边缘的大晶圆区域与层压板接触，以使边缘附近的冷却气体泄漏最小化，并且通过增加电极之间的电介质材料的路径长度来提供更长的使用寿命层和可能损坏的卡盘周围的等离子体材料。

7. 发明授权

US06402806B1 Method for unreacted precursor conversion and effluent removal 失效
标题翻译：未反应的前体转化和流出物去除的方法
公开(公告)号：US06402806B1
公开(公告)日：2002-06-11
申请号：US09608659
申请日：2000-06-30
申请人： John Vincent Schmitt , Ling Chen , George Michael Bleyle , Yu Cong , Alfred Mak , Mei Chang
发明人： John Vincent Schmitt , Ling Chen , George Michael Bleyle , Yu Cong , Alfred Mak , Mei Chang
IPC分类号： C22B1500
CPC分类号： C23C16/45561 , B01D53/002 , B01D53/72 , C23C16/4412 , C30B25/14 , H01J37/32834
摘要： A hot trap converts unreacted organic metal-film precursor from the exhaust stream of a CVD process. The converted precursor forms a metal film on the surface of the hot trap, thereby protecting hot vacuum pump surfaces from metal build up. A cold trap downstream from the hot trap freezes effluents from the exhaust stream. The metal captured by the hot trap and the effluents captured by the cold trap may then be recycled, rather than being released as environmental emissions.
摘要翻译：热阱从CVD工艺的排气流转换未反应的有机金属膜前体。转化的前体在热阱的表面上形成金属膜，从而保护热真空泵表面免受金属积聚。热阱下游的冷阱将废气排出的废水冻结。由热阱捕获的金属和由冷阱捕获的流出物可以被再循环，而不是作为环境排放而被释放。

8. 发明授权

US5858464A Methods and apparatus for minimizing excess aluminum accumulation in CVD chambers 失效
标题翻译：用于最小化CVD室中过多的铝积聚的方法和装置
公开(公告)号：US5858464A
公开(公告)日：1999-01-12
申请号：US791131
申请日：1997-02-13
申请人： Karl Littau , Dashun S. Zhou , Alfred Mak , Ling Chen
发明人： Karl Littau , Dashun S. Zhou , Alfred Mak , Ling Chen
IPC分类号： C23C16/20 , C23C16/44 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L23/52
CPC分类号： H01L21/28556 , C23C16/4401 , C23C16/4404
摘要： A method and apparatus for minimizing excess aluminum deposition that can build up inside a substrate processing chamber during an aluminum CVD substrate processing operation. The method of the present invention periodically introduces nitrogen into the processing chamber after aluminum CVD processing of at least a single wafer in order to minimize unwanted aluminum accumulation in various parts of the chamber. According to one embodiment, the present invention provides a method of minimizing excess metal deposition inside a substrate processing chamber after a substrate processing operation. The method includes the steps of introducing a nitrogen-containing passivating gas into a chamber after the substrate processing operation, and maintaining at least a portion of the chamber at a second temperature during the introducing step thereby reducing excess metal build up within the chamber. In preferred embodiments, the method is performed after removal of the substrate from the processing chamber. In other preferred embodiments, the second temperature ranges from about 200.degree.-300.degree. C.
摘要翻译：一种用于最小化在铝CVD衬底处理操作期间可以在衬底处理室内形成的多余铝沉积的方法和装置。本发明的方法在对至少一个晶片进行铝CVD处理之后，将氮气周期性地引入处理室中，以便最小化腔室各部分中不希望的铝积聚。根据一个实施例，本发明提供一种在衬底处理操作之后使衬底处理室内的多余金属沉积最小化的方法。该方法包括以下步骤：在基板处理操作之后将含氮钝化气体引入室中，并且在引入步骤期间将室的至少一部分保持在第二温度，从而减少室内过量的金属积聚。在优选的实施方案中，在从处理室中除去基材之后进行该方法。在其它优选实施方案中，第二温度范围为约200-300℃

9. 发明授权

US06309713B1 Deposition of tungsten nitride by plasma enhanced chemical vapor deposition 失效
公开(公告)号：US06309713B1
公开(公告)日：2001-10-30
申请号：US08884811
申请日：1997-06-30
申请人： Alfred Mak , Ling Chen , David C. Smith , Mei Chang , Steve Ghanayem
发明人： Alfred Mak , Ling Chen , David C. Smith , Mei Chang , Steve Ghanayem
IPC分类号： H05H124
CPC分类号： H01L21/76843 , C23C16/0245 , C23C16/14 , C23C16/34 , H01L21/28061 , H01L29/4941 , H01L29/66583
摘要： A layer of tungsten nitride is deposited on the upper surface of a wafer. The deposition is performed by providing a gaseous mixture and providing energy to the gaseous mixture to form a plasma. The gaseous mixture includes a first gaseous composition containing tungsten and a second gaseous composition containing nitrogen and hydrogen. The second gaseous composition is one that does not have a gas phase reaction with the first gaseous composition to form tungsten nitride, unless energy is provided to the gaseous mixture. The first gaseous composition may be tungsten hexafluoride (WF6). The gaseous mixture may be infused with energy to form a plasma by providing it with energy from an rf signal. In the plasma, the nitrogen dissociates into nitrogen ions, and the tungsten separates from the fluorine. The nitrogen ions and tungsten then combine to form tungsten nitride (W2N), which deposits on the wafer's upper surface.

10. 发明授权

US6099649A Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal 失效
标题翻译：用于未反应的前体转化和流出物去除的化学气相沉积热阱
公开(公告)号：US6099649A
公开(公告)日：2000-08-08
申请号：US996735
申请日：1997-12-23
申请人： John Vincent Schmitt , Ling Chen , George Michael Bleyle , Yu Cong , Alfred Mak , Mei Chang
发明人： John Vincent Schmitt , Ling Chen , George Michael Bleyle , Yu Cong , Alfred Mak , Mei Chang
IPC分类号： B01D8/00 , B01D53/00 , B01D53/72 , C23C16/44 , C30B25/14 , H01J37/32 , C23C16/00
CPC分类号： C23C16/45561 , B01D53/002 , B01D53/72 , C23C16/4412 , C30B25/14 , H01J37/32834
摘要： A hot trap converts unreacted organic metal-film precursor from the exhaust stream of a CVD process. The converted precursor forms a metal film on the surface of the hot trap, thereby protecting hot vacuum pump surfaces from metal build up. A cold trap downstream from the hot trap freezes effluents from the exhaust stream. The metal captured by the hot trap and the effluents captured by the cold trap may then be recycled, rather than being released as environmental emissions.
摘要翻译：热阱从CVD工艺的排气流转换未反应的有机金属膜前体。转化的前体在热阱的表面上形成金属膜，从而保护热真空泵表面免受金属积聚。热阱下游的冷阱将废气排出的废水冻结。由热阱捕获的金属和由冷阱捕获的流出物可以被再循环，而不是作为环境排放而被释放。

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