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1. 发明授权

US5740009A Apparatus for improving wafer and chuck edge protection 失效
标题翻译：用于改善晶片和卡盘边缘保护的装置
公开(公告)号：US5740009A
公开(公告)日：1998-04-14
申请号：US758531
申请日：1996-11-29
申请人： Bryan Pu , Hongching Shan , Kuang-Han Ke , Michael Welch , Semyon Sherstinsky , Alfred Mak , Ling Chen , Sue Zhang , Leonel Arturo Zuniga , Samuel C. Wilson
发明人： Bryan Pu , Hongching Shan , Kuang-Han Ke , Michael Welch , Semyon Sherstinsky , Alfred Mak , Ling Chen , Sue Zhang , Leonel Arturo Zuniga , Samuel C. Wilson
IPC分类号： H01L21/683 , H01L21/687 , H02N13/00
CPC分类号： H01L21/68735 , H01L21/6831 , H01L21/6833 , H02N13/00
摘要： Apparatus for retaining a wafer having improved wafer and chuck edge protection, contains an protection ring that circumscribes a pedestal and is biased to be in constant contact with the backside of the wafer. A biasing element uniformly biases the protection ring into contact with the circumferential edge of the wafer. The protection ring has an annular plan form that circumscribes an electrostatic chuck for retaining the wafer in a stationery position. Vertical travel of the ring is restricted by a hard stop that is formed by a portion of a focus ring which overhangs the protection ring. After a wafer is placed upon the chuck and the chucking force enabled, the chucking force easily overcomes the bias force upon the protection ring and the wafer rests upon the chuck support surface. The protection ring contacts the backside of the wafer to ensure that pedestal and electrostatic chuck are not exposed to the plasma and, when a silicon protection ring is used, the effective area of the wafer is extended beyond the physical dimensions of the wafer to facilitate a more uniform plasma distribution over the wafer.
摘要翻译：用于保持具有改进的晶片和卡盘边缘保护的晶片的装置包含限定基座的保护环，并被偏置以与晶片的背面恒定接触。偏置元件均匀地将保护环偏压成与晶片的周缘接触。保护环具有环形平面形式，其环绕静电卡盘以将晶片保持在文具位置。环的垂直行程受到由突出于保护环上的聚焦环的一部分形成的硬停止的限制。在将晶片放置在卡盘上并且夹持力能够实现之后，夹紧力容易地克服保护环上的偏压力并且晶片搁置在卡盘支撑表面上。保护环接触晶片的背面以确保基座和静电卡盘不暴露于等离子体，并且当使用硅保护环时，晶片的有效面积延伸超过晶片的物理尺寸以便于在晶片上更均匀的等离子体分布。

2. 发明授权

US6113731A Magnetically-enhanced plasma chamber with non-uniform magnetic field 失效
标题翻译：具有不均匀磁场的磁增强等离子体室
公开(公告)号：US6113731A
公开(公告)日：2000-09-05
申请号：US735444
申请日：1997-01-02
申请人： Hongching Shan , Roger Lindley , Claes Bjorkman , Xue Yu Qian , Richard Plavidal , Bryan Pu , Ji Ding , Zongyu Li , Kuang-Han Ke , Michael Welch
发明人： Hongching Shan , Roger Lindley , Claes Bjorkman , Xue Yu Qian , Richard Plavidal , Bryan Pu , Ji Ding , Zongyu Li , Kuang-Han Ke , Michael Welch
IPC分类号： H05H1/46 , H01J37/32 , H01L21/00 , H01L21/02 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/687 , C23F1/02
CPC分类号： H01L21/67069 , H01J37/32623 , H01J37/3266 , H01L21/68735
摘要： A plasma chamber having a magnet which produces a magnetic field such that, within a region parallel to and adjacent to the workpiece, the direction of the magnetic field is approximately the vector cross product of (i) the gradient of the magnitude of the magnetic field, and (ii) a vector extending perpendicularly from the workpiece surface toward the plasma. Alternatively, the plasma chamber includes a north magnetic pole and a south magnetic pole located at distinct azimuths around the periphery of the workpiece. The azimuth of the south magnetic pole relative to the north magnetic pole is clockwise around the central axis, and each magnetic pole faces a direction which is more toward than away from a central axis of the workpiece area. An additional aspect of the invention is a plasma chamber having a rotating magnetic field produced by electromagnets spaced around the periphery of the workpiece which receive successive fixed amounts of electrical current during successive time intervals. During each transition between the time intervals, the current supplied to each electromagnet is changed relatively slowly or relatively quickly according to whether the current change includes a change in polarity.
摘要翻译：具有磁体的等离子体室产生磁场，使得在与工件平行并邻近工件的区域内，磁场的方向近似为（i）磁场强度梯度的矢量交叉积，和（ii）从工件表面朝向等离子体垂直延伸的矢量。或者，等离子体室包括北磁极和位于工件周围的不同方位角处的南磁极。南磁极相对于北磁极的方位角是围绕中心轴顺时针旋转的，每个磁极面对的方向远离工件区域的中心轴线。本发明的另一方面是等离子体室，其具有由围绕工件周边间隔开的电磁体产生的旋转磁场，其在连续的时间间隔期间接收连续的固定量的电流。在时间间隔期间的每个转换期间，根据电流变化是否包括极性变化，提供给每个电磁体的电流相对缓慢或相对较快地改变。

3. 发明授权

US5843847A Method for etching dielectric layers with high selectivity and low microloading 失效
标题翻译：高选择性和低负载下蚀刻电介质层的方法
公开(公告)号：US5843847A
公开(公告)日：1998-12-01
申请号：US639388
申请日：1996-04-29
申请人： Bryan Pu , Hongching Shan , Michael Welch
发明人： Bryan Pu , Hongching Shan , Michael Welch
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/00
CPC分类号： H01L21/31116
摘要： A method of etching a dielectric layer on a substrate with high etching selectivity, low etch rate microloading, and high etch rates is described. In the method, the substrate is placed in a process zone, and a plasma is formed from process gas introduced into the process zone. The process gas comprises (i) fluorocarbon gas for etching the dielectric layer and for forming passivating deposits on the substrate, (ii) carbon-oxygen gas for enhancing formation of the passivating deposits, and (iii) nitrogen-containing gas for etching the passivating deposits on the substrate. The volumetric flow ratio of fluorocarbon:carbon-oxygen:nitrogen-containing gas is selected to provide a dielectric to resist etching selectivity ratio of at least about 10:1, an etch rate microloading of
摘要翻译：描述了以高蚀刻选择性，低刻蚀速率微载物和高蚀刻速率蚀刻衬底上的电介质层的方法。在该方法中，将衬底放置在工艺区域中，并且将等离子体从引入工艺区域的工艺气体形成。工艺气体包括（i）用于蚀刻介电层并用于在衬底上形成钝化沉积物的碳氟化合物气体，（ii）用于增强钝化沉积物形成的碳 - 氧气，和（iii）用于蚀刻钝化的含氮气体沉积在基材上。选择氟碳：碳 - 氧：含氮气体的体积流量比以提供电介质以抵抗至少约10:1的蚀刻选择率，<10％的蚀刻速率微载荷，以及在至少约100nm / min。优选地，选择氟碳：碳 - 氧：含氮气体的体积流量比，使得新蚀刻特征的侧壁上的钝化沉积物的形成速率近似等于钝化沉积物的去除速率。

4. 发明授权

US6022446A Shallow magnetic fields for generating circulating electrons to enhance plasma processing 失效
标题翻译：用于产生循环电子的浅磁场以增强等离子体处理
公开(公告)号：US6022446A
公开(公告)日：2000-02-08
申请号：US517178
申请日：1995-08-21
申请人： Hongching Shan , Bryan Pu , Ji Ding , Michael Welch
发明人： Hongching Shan , Bryan Pu , Ji Ding , Michael Welch
IPC分类号： H05H1/46 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/00
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/3266
摘要： The present invention is embodied in a plasma reactor for processing a workpiece such as a semiconductor wafer having an axis of symmetry, the reactor including a reactor chamber with a ceiling, a pedestal for supporting the workpiece within the chamber under the ceiling, a processing gas supply inlet into the chamber, an RF plasma power source coupled to the pedestal, and a magnetic field source near the ceiling providing a radially symmetrical magnetic field relative to the axis of symmetry within a portion of the chamber near the ceiling. The magnetic field source can include an electromagnet or plural magnets disposed over the ceiling in a radially symmetrical fashion with respect to the axis of symmetry. The plural magnets may be permanent magnets or electromagnets. The radially symmetrical magnetic field penetrates from the ceiling into the chamber to a shallow depth, and the height of the ceiling above the workpiece exceeds the depth.
摘要翻译：本发明体现在用于处理诸如具有对称轴的半导体晶片的工件的等离子体反应器中，该反应器包括具有天花板的反应室，用于将工件支撑在天花板下方的室内的处理气体供应入室的入口，耦合到基座的RF等离子体电源以及靠近天花板的磁场源，在靠近天花板的腔室的一部分内相对于对称轴提供径向对称的磁场。磁场源可以包括相对于对称轴线以径向对称的方式设置在天花板上方的电磁体或多个磁体。多个磁体可以是永磁体或电磁体。径向对称的磁场从天花板穿透入室至浅深度，工件上方天花板的高度超过深度。

5. 发明授权

US5674321A Method and apparatus for producing plasma uniformity in a magnetic field-enhanced plasma reactor 失效
标题翻译：用于在磁场增强等离子体反应器中产生等离子体均匀性的方法和装置
公开(公告)号：US5674321A
公开(公告)日：1997-10-07
申请号：US431178
申请日：1995-04-28
申请人： Bryan Pu , Hongching Shan
发明人： Bryan Pu , Hongching Shan
IPC分类号： H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/46 , C23C16/00
CPC分类号： H01J37/32623 , H01J37/3266 , H05H1/46
摘要： A magnetic field enhanced plasma etch reactor system for generating a radially-directed magnetic field within a reaction chamber. The reactor system comprises a reaction chamber for containing a plasma and a plurality of electromagnetic coils disposed about a reaction region within the reaction chamber. When each coil is driven with a current of similar magnitude, the electromagnetic coils produce a radially-directed magnetic field within the reaction chamber. The radially-directed magnetic field uniformly distributes the plasma throughout a bulk plasma region. Consequently, a substrate that is etched by such a uniform plasma has an improved uniformity in the etch pattern on the substrate.
摘要翻译：一种用于在反应室内产生径向磁场的磁场增强等离子体蚀刻反应器系统。反应器系统包括用于容纳等离子体的反应室和设置在反应室内的反应区域周围的多个电磁线圈。当每个线圈以类似大小的电流驱动时，电磁线圈在反应室内产生径向定向的磁场。径向磁场将等离子体均匀地分布在整个等离子体区域中。因此，通过这种均匀等离子体蚀刻的衬底具有改进的衬底上的蚀刻图案的均匀性。

6. 发明申请

US20050003675A1 Dielectric etch chamber with expanded process window 审中-公开
标题翻译：介质蚀刻室具有扩展的工艺窗口
公开(公告)号：US20050003675A1
公开(公告)日：2005-01-06
申请号：US10863590
申请日：2004-06-07
申请人： James Carducci , Hamid Noorbakhsh , Evans Lee , Bryan Pu , Hongqing Shan , Claes Bjorkman , Siamak Salimian , Paul Luscher , Michael Welch
发明人： James Carducci , Hamid Noorbakhsh , Evans Lee , Bryan Pu , Hongqing Shan , Claes Bjorkman , Siamak Salimian , Paul Luscher , Michael Welch
IPC分类号： H01J37/32 , H01L21/00 , H01L21/311 , H01L21/60 , H01L21/683 , H01L21/687 , H01L21/768 , C23F1/00
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68757 , H01L21/68785 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.
摘要翻译：一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

7. 发明授权

US07541292B2 Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones 有权
标题翻译：在独立的内部和外部气体注入区域中分别进料碳贫和富碳聚合蚀刻气体的等离子体蚀刻工艺
公开(公告)号：US07541292B2
公开(公告)日：2009-06-02
申请号：US11414027
申请日：2006-04-28
申请人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
发明人： Kallol Bera , Xiaoye Zhao , Kenny L. Doan , Ezra Robert Gold , Paul Lukas Brillhart , Bruno Geoffrion , Bryan Pu , Daniel J. Hoffman
IPC分类号： H01L21/461
CPC分类号： H01L21/76802 , H01J37/32091 , H01J37/3244 , H01J37/3266 , H01J37/32706 , H01J2237/3347 , H01L21/31116
摘要： A plasma etch process for etching high aspect ratio openings in a dielectric film on a workpiece is carried out in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a first polymerizing etch process gas through a radially inward one of plural concentric gas injection zones in the ceiling electrode and injecting a second polymerizing etch process gas through a radially outward one of the plural concentric gas injection zones in the ceiling electrode, the compositions of the first and second process gases having first and second carbon-to-fluorine ratios that differ from one another. The process further includes evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece, and etching the high aspect ratio openings in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor.
摘要翻译：用于蚀刻工件上的电介质膜中的高纵横比开口的等离子体蚀刻工艺在具有覆盖工件的顶部电极的反应器和支撑工件的静电卡盘上进行。该方法包括将第一聚合蚀刻工艺气体通过天花板电极中的多个同心气体注入区的径向向内的一个注入，并且通过天花板电极中的多个同心气体注入区中的径向向外的一个喷射第二聚合蚀刻工艺气体，第一和第二工艺气体的组成具有彼此不同的第一和第二碳 - 氟比率。该方法还包括通过围绕工件边缘的泵送环空将气体从反应器排出，以及用蚀刻工艺气体衍生的蚀刻物质蚀刻电介质膜中的高纵横比开口，同时沉积衍生自蚀刻工艺气体的聚合物通过在反应器中产生等离子体而在工件上。

8. 发明申请

US20050090118A1 Plasma control using dual cathode frequency mixing 有权
标题翻译：等离子体控制采用双阴极混频
公开(公告)号：US20050090118A1
公开(公告)日：2005-04-28
申请号：US10823364
申请日：2004-04-12
申请人： Steven Shannon , Dennis Grimard , Theodoros Panagopoulos , Daniel Hoffman , Michael Chafin , Troy Detrick , Alexander Paterson , Jingbao Liu , Taeho Shin , Bryan Pu
发明人： Steven Shannon , Dennis Grimard , Theodoros Panagopoulos , Daniel Hoffman , Michael Chafin , Troy Detrick , Alexander Paterson , Jingbao Liu , Taeho Shin , Bryan Pu
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/302 , H01L21/461
CPC分类号： H01J37/32082 , H01J37/32165
摘要： A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.
摘要翻译：提供一种使用双频RF源控制半导体衬底处理室中的等离子体特性的方法和装置。该方法包括向设置在处理室中的第一电极提供第一RF信号，并向第一电极提供第二RF信号，其中第一和第二RF信号之间的相互作用用于控制等离子体的至少一个特性形成在处理室中。

9. 发明授权

US08609546B2 Pulsed bias plasma process to control microloading 有权
标题翻译：脉冲偏压等离子体工艺来控制微载荷
公开(公告)号：US08609546B2
公开(公告)日：2013-12-17
申请号：US12744588
申请日：2008-11-18
申请人： Wonchul Lee , Qian Fu , Shenjian Liu , Bryan Pu
发明人： Wonchul Lee , Qian Fu , Shenjian Liu , Bryan Pu
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/32136
摘要： A method for etching a conductive layer through a mask with wider and narrower features is provided. A steady state etch gas is flowed. A steady state RF power is provided to form a plasma from the etch gas. A pulsed bias voltage is provided during the steady state etch gas flow, wherein the pulsed bias voltage has a frequency between 1 to 10,000 Hz. Wider and narrower features are etched into the conductive layer using the plasma formed from the etch gas.
摘要翻译：提供了通过具有更宽和更窄特征的掩模蚀刻导电层的方法。稳态蚀刻气体流过。提供稳态RF功率以从蚀刻气体形成等离子体。在稳态蚀刻气流期间提供脉冲偏压，其中脉冲偏压具有1至10,000Hz之间的频率。使用由蚀刻气体形成的等离子体将更宽和更窄的特征蚀刻到导电层中。

10. 发明申请

US20110151670A1 METHOD OF CONTROLLING ETCH MICROLOADING FOR A TUNGSTEN-CONTAINING LAYER 有权
标题翻译：控制含金属层的蚀刻微孔的方法
公开(公告)号：US20110151670A1
公开(公告)日：2011-06-23
申请号：US12744012
申请日：2008-11-13
申请人： Wonchul Lee , Qian Fu , Shenjian Liu , Bryan Pu
发明人： Wonchul Lee , Qian Fu , Shenjian Liu , Bryan Pu
IPC分类号： H01L21/3065
CPC分类号： H01L21/32136 , H01L21/32138
摘要： A method for etching features of different aspect ratios in a tungsten containing layer is provided. An etch gas is provided containing a tungsten etch component and a deposition component. A plasma is formed from the provided etch gas. A tungsten containing layer patterned with wide and narrow features is etched with the provided plasma.
摘要翻译：提供了一种用于蚀刻含钨层中不同纵横比的特征的方法。提供了含有钨蚀刻部件和沉积部件的蚀刻气体。由所提供的蚀刻气体形成等离子体。用所提供的等离子体蚀刻用宽而窄的特征图案化的含钨层。

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