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1. 发明授权

US07745309B2 Methods for surface activation by plasma immersion ion implantation process utilized in silicon-on-insulator structure 有权
标题翻译：用于绝缘体上硅结构中的等离子体浸没离子注入工艺的表面活化方法
公开(公告)号：US07745309B2
公开(公告)日：2010-06-29
申请号：US11463425
申请日：2006-08-09
申请人： Randhir P S Thakur , Stephen Moffatt , Per-Ove Hansson , Steve Ghanayem
发明人： Randhir P S Thakur , Stephen Moffatt , Per-Ove Hansson , Steve Ghanayem
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , H01J37/32412
摘要： Methods for promoting interface bonding energy utilized in SOI technology are provided. In one embodiment, the method for promoting interface bonding energy includes providing a first substrate and a second substrate, wherein the first substrate has a silicon oxide layer formed thereon and a cleavage plane defined therein, performing a dry cleaning process on a surface of the silicon oxide layer and a surface of the second substrate, and bonding the cleaned silicon oxide surface of the first substrate to the cleaned surface of the second substrate.
摘要翻译：提供了在SOI技术中使用的促进界面结合能的方法。在一个实施方案中，用于促进界面结合能的方法包括提供第一衬底和第二衬底，其中第一衬底具有形成在其上的氧化硅层和限定在其中的解理面，在硅的表面上进行干洗处理氧化物层和第二衬底的表面，并且将清洁的第一衬底的氧化硅表面接合到第二衬底的清洁表面。

2. 发明授权

US06271129B1 Method for forming a gap filling refractory metal layer having reduced stress 失效
$Method for forming a gap filling refractory metal layer having reduced stress$
标题翻译：用于形成具有减小的应力的填充难熔金属层的间隙填充方法
公开(公告)号：US06271129B1
公开(公告)日：2001-08-07
申请号：US08984438
申请日：1997-12-03
申请人： Steve Ghanayem , Maitreyee Mahajani
发明人： Steve Ghanayem , Maitreyee Mahajani
IPC分类号： H01L2144
CPC分类号： H01J37/32743 , C23C16/14 , H01J37/32082 , H01J37/32449 , H01J37/32788 , H01J2237/3321 , H01J2237/3328 , H01L21/28556
摘要： A method for forming a refractory metal layer that features two-stage nucleation prior to bulk deposition of the same. The method includes placing a substrate in a deposition zone, flowing, into the deposition zone during a first deposition stage, a silicon source, such as a silane gas, and a tungsten source, such as tungsten-hexafluoride gas, so as to obtain a predetermined ratio of the two gases therein. During a second deposition stage, subsequent to the first deposition stage, the ratio of the two gases is varied. Specifically, in the first deposition stage there is a greater quantity of silane gas than tungsten-hexafluoride gas. In the second deposition stage there may be a greater quantity of tungsten-hexafluoride than silane.
摘要翻译：一种形成难熔金属层的方法，其特征在于在其沉积之前具有两级成核。该方法包括在第一沉积阶段将衬底放置在沉积区中流动到沉积区中，将诸如硅烷气体的硅源和诸如六氟化钨气体的钨源放置在基底上，以获得其中两种气体的预定比例。在第二沉积阶段期间，在第一沉积阶段之后，改变两种气体的比例。具体地说，在第一沉积阶段，比六氟化钨气体有大量的硅烷气体。在第二沉积阶段，可能比硅烷有更多的六氟化钨。

3. 发明授权

US06248176B1 Apparatus and method for delivering a gas 有权
标题翻译：用于输送气体的装置和方法
公开(公告)号：US06248176B1
公开(公告)日：2001-06-19
申请号：US09390136
申请日：1999-09-03
申请人： Joseph Yudovsky , Kenneth Tsai , Steve Ghanayem , Semyon Sherstinsky
发明人： Joseph Yudovsky , Kenneth Tsai , Steve Ghanayem , Semyon Sherstinsky
IPC分类号： C23C1600
CPC分类号： H01L21/68735
摘要： A gas delivery method and apparatus for directing a purge gas to the edge of a substrate at an angle to a linear divergence from the center of the substrate. The apparatus directs a purge gas from a supply source over a deflection surface, having one or more grooves angled relative to a linear divergence from the center of the substrate, to the edge of the substrate. Preferably, the gas is delivered to the edge of the substrate at an angle between about 10 and 90 degrees to a linear divergence from the center of the substrate.
摘要翻译：一种气体输送方法和装置，用于将吹扫气体以与衬底中心成直线散度的角度引导到衬底的边缘。该装置将来自供应源的净化气体引导到偏转表面上，该偏转表面具有相对于从基板的中心到基板的边缘的线性发散度成角度的一个或多个槽。优选地，气体以约10至90度之间的角度被输送到衬底的边缘，从而与衬底的中心线性发散。

4. 发明授权

US5985033A Apparatus and method for delivering a gas 失效
标题翻译：用于输送气体的装置和方法
公开(公告)号：US5985033A
公开(公告)日：1999-11-16
申请号：US893769
申请日：1997-07-11
申请人： Joseph Yudovsky , Kenneth Tsai , Steve Ghanayem , Semyon Sherstinsky
发明人： Joseph Yudovsky , Kenneth Tsai , Steve Ghanayem , Semyon Sherstinsky
IPC分类号： H01L21/302 , C23C14/34 , C23C16/448 , H01L21/205 , H01L21/3065 , H01L21/687 , C23C16/00 , C23C14/00
CPC分类号： H01L21/68735
摘要： A gas delivery apparatus for directing a flow of gas at the edge of a substrate at an angle to the radial direction of the substrate. The apparatus directs the gas from a gas orifice, and over a plurality of grooves that are angled relative to the radial direction of the substrate. Preferably, the resultant flow of gas flows at an angle of between 10 and 90 degrees relative to the radial direction of the substrate.
摘要翻译：一种气体输送装置，用于在衬底的边缘处以与衬底的径向方向成一定角度引导气体流。该装置引导来自气体孔口的气体以及相对于基板的径向成角度的多个凹槽。优选地，所产生的气体流相对于衬底的径向方向以10度和90度之间的角度流动。

5. 发明授权

US5709772A Non-plasma halogenated gas flow to prevent metal residues 失效
标题翻译：非等离子体卤化气体流动，防止金属残留
公开(公告)号：US5709772A
公开(公告)日：1998-01-20
申请号：US625485
申请日：1996-03-29
申请人： Steve Ghanayem , Moris Kori , Maitreyee Mahajani , Ravi Rajagopalan
发明人： Steve Ghanayem , Moris Kori , Maitreyee Mahajani , Ravi Rajagopalan
IPC分类号： C23C16/02 , C23C16/44 , C23C16/455 , C23C16/52 , H01L21/302 , H01L21/3065 , H01L21/306 , C23F1/00
CPC分类号： C23C16/52 , C23C16/02 , C23C16/4405
摘要： An apparatus and process for limiting residue remaining after the etching of metal in a semiconductor manufacturing process by injecting a halogen-containing gas without a plasma into a processing chamber. The wafer is then exposed to the remnants of the halogen-containing gas in the chamber before the metal is deposited on the wafer. The exposure can occur in the same chamber as the metal deposition, or a different chamber. The wafer can remain in the chamber or be moved to another chamber for etching after exposure and deposition.
摘要翻译：一种用于限制半导体制造工艺中的金属蚀刻后剩余残留物的装置和方法，其中将不含等离子体的含卤素气体注入到处理室中。然后在金属沉积在晶片上之前，将晶片暴露于腔室中的含卤素气体的残留物。曝光可能发生在与金属沉积相同的室中，或者在不同的室中。晶片可以保留在腔室中，或者在曝光和沉积之后移动到另一个腔室进行蚀刻。

6. 发明申请

US20050087212A1 Scrubber box and methods for using the same 有权
标题翻译：洗涤箱和使用方法
公开(公告)号：US20050087212A1
公开(公告)日：2005-04-28
申请号：US10976012
申请日：2004-10-28
申请人： Joseph Yudovsky , Avi Tepman , Kenneth Reynolds , Younes Achkire , Dan Marohl , Steve Ghanayem , Alexander Polyak , Gary Ettinger , Haochuan Zhang , Hui Chen
发明人： Joseph Yudovsky , Avi Tepman , Kenneth Reynolds , Younes Achkire , Dan Marohl , Steve Ghanayem , Alexander Polyak , Gary Ettinger , Haochuan Zhang , Hui Chen
IPC分类号： B08B1/04 , H01L21/00
CPC分类号： H01L21/67046 , B08B1/04
摘要： A scrubber box is provided that includes a tank adapted to receive a substrate for cleaning, supports outside of the tank and adapted to couple to ends of scrubber brushes disposed within the tank, a motor mounted to each of the supports and adapted to rotate the scrubber brushes, a base to which the supports are pivotally mounted via spherical bearings adapted to permit toe-in of the scrubber brushes, a brush gap actuator adapted, via a crank and rocker mechanism, to substantially simultaneously pivot the supports toward or away from each other so as to permit the scrubber brushes to substantially simultaneously achieve or break contact with the substrate, and a toe-in actuator adapted to move two of the spherical bearings toward or away from each other so as to adjust a toe-in angle between the scrubber brushes.
摘要翻译：提供了一种洗涤器箱，其包括适于接收用于清洁的基底的罐，支撑在罐外部并且适于耦合到设置在罐内的洗涤器刷的端部;马达，其安装到每个支撑件上并适于旋转洗涤器电刷，支架通过适于允许洗涤器刷子进入的球面轴承可枢转地安装的基座，经由曲柄和摇臂机构适应的基本上同时地使支撑件朝向或远离彼此枢转的电刷间隙致动器以便允许洗涤器刷子基本上同时实现或断开与基板的接触，以及适于将两个球形轴承朝向或远离彼此移动的脚趾致动器，以便调节洗涤器之间的束缚角度刷子

7. 发明授权

US06677247B2 Method of increasing the etch selectivity of a contact sidewall to a preclean etchant 失效
标题翻译：将接触侧壁的蚀刻选择性增加到预清洗蚀刻剂的方法
公开(公告)号：US06677247B2
公开(公告)日：2004-01-13
申请号：US10041550
申请日：2002-01-07
申请人： Zheng Yuan , Steve Ghanayem , Randhir P. S. Thakur
发明人： Zheng Yuan , Steve Ghanayem , Randhir P. S. Thakur
IPC分类号： H01L2100
CPC分类号： H01L21/76814 , C03C15/00 , H01L21/02043 , H01L21/02046 , H01L21/02063 , H01L21/31116 , H01L21/76826 , H01L21/76831
摘要： A method of forming a contact in an integrated circuit between a first metalization layer and a silicon substrate. In one embodiment the method comprises forming a premetal dielectric layer over the silicon substrate, etching a contact hole through the premetal dielectric layer and then forming a thin silicon nitride layer on an outer surface of the contact hole. The silicon nitride layer reduces overetching that may otherwise occur when oxidation build-up is removed from the silicon interface within the contact hole by a preclean process. After the preclean process, the contact hole is then filled with one or more conductive materials. In various embodiments the silicon nitride layer is formed by exposing the contact hole to a nitrogen plasma, depositing the layer by a chemical vapor deposition process and depositing the layer by an atomic layer deposition process. In other embodiments, the method is applicable to the formation of vias through intermetal dielectric layers.
摘要翻译：一种在第一金属化层和硅衬底之间的集成电路中形成接触的方法。在一个实施例中，该方法包括在硅衬底上形成前金属介电层，蚀刻通过前金属介电层的接触孔，然后在接触孔的外表面上形成薄的氮化硅层。氮化硅层减少过蚀刻，否则当通过预清洗工艺从接触孔中的硅界面除去氧化积聚时，可能会发生过蚀刻。在预清洗工艺之后，接触孔然后用一种或多种导电材料填充。在各种实施例中，通过将接触孔暴露于氮等离子体，通过化学气相沉积工艺沉积该层并通过原子层沉积工艺沉积该层来形成氮化硅层。在其它实施例中，该方法适用于通过金属间电介质层形成通孔。

8. 发明授权

US06309713B1 Deposition of tungsten nitride by plasma enhanced chemical vapor deposition 失效
公开(公告)号：US06309713B1
公开(公告)日：2001-10-30
申请号：US08884811
申请日：1997-06-30
申请人： Alfred Mak , Ling Chen , David C. Smith , Mei Chang , Steve Ghanayem
发明人： Alfred Mak , Ling Chen , David C. Smith , Mei Chang , Steve Ghanayem
IPC分类号： H05H124
CPC分类号： H01L21/76843 , C23C16/0245 , C23C16/14 , C23C16/34 , H01L21/28061 , H01L29/4941 , H01L29/66583
摘要： A layer of tungsten nitride is deposited on the upper surface of a wafer. The deposition is performed by providing a gaseous mixture and providing energy to the gaseous mixture to form a plasma. The gaseous mixture includes a first gaseous composition containing tungsten and a second gaseous composition containing nitrogen and hydrogen. The second gaseous composition is one that does not have a gas phase reaction with the first gaseous composition to form tungsten nitride, unless energy is provided to the gaseous mixture. The first gaseous composition may be tungsten hexafluoride (WF6). The gaseous mixture may be infused with energy to form a plasma by providing it with energy from an rf signal. In the plasma, the nitrogen dissociates into nitrogen ions, and the tungsten separates from the fluorine. The nitrogen ions and tungsten then combine to form tungsten nitride (W2N), which deposits on the wafer's upper surface.

9. 发明授权

US06156382A Chemical vapor deposition process for depositing tungsten 失效
标题翻译：用于沉积钨的化学气相沉积工艺
公开(公告)号：US06156382A
公开(公告)日：2000-12-05
申请号：US857658
申请日：1997-05-16
申请人： Ravi Rajagopalan , Steve Ghanayem , Manabu Yamazaki , Keiichi Ohtsuka , Yuji Maeda
发明人： Ravi Rajagopalan , Steve Ghanayem , Manabu Yamazaki , Keiichi Ohtsuka , Yuji Maeda
IPC分类号： C23C16/08 , C23C16/02 , C23C16/14 , H01L21/28 , H01L21/285 , H01L21/768
CPC分类号： H01L21/76838 , C23C16/02 , C23C16/0281 , C23C16/14 , H01L21/28556
摘要： A multiple step chemical vapor deposition process for depositing a tungsten layer on a substrate. A first step of the deposition process includes a nucleation step in which WF.sub.6 and SiH.sub.4 are introduced into a deposition chamber. Next, the flow of WF.sub.6 and SiH.sub.4 are stopped and diborane is introduced into the chamber for between 5-25 seconds. Finally, during a bulk deposition step, the WF.sub.6 is reintroduced into the chamber along with H.sub.2 and B.sub.2 H.sub.6 flows to deposit a tungsten layer on the substrate. In a preferred embodiment, the bulk deposition step also introduces nitrogen into the process gas.
摘要翻译：用于在基底上沉积钨层的多步化学气相沉积工艺。沉积工艺的第一步包括将WF 6和SiH 4引入沉积室的成核步骤。接下来，停止WF6和SiH4的流动，并将乙硼烷引入室中5-25秒。最后，在大量沉积步骤期间，将WF6与H 2和B 2 H 6流一起重新引入室中，以在衬底上沉积钨层。在优选的实施方案中，本体沉积步骤还将氮气引入工艺气体中。

10. 发明申请

US20080268617A1 METHODS FOR SUBSTRATE SURFACE CLEANING SUITABLE FOR FABRICATING SILICON-ON-INSULATOR STRUCTURES 审中-公开
标题翻译：用于制造绝缘体硅结构的基板表面清洁方法
公开(公告)号：US20080268617A1
公开(公告)日：2008-10-30
申请号：US11463429
申请日：2006-08-09
申请人： Randhir P. S. Thakur , Stephen Moffatt , Per-Ove Hansson , Steve Ghanayem
发明人： Randhir P. S. Thakur , Stephen Moffatt , Per-Ove Hansson , Steve Ghanayem
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/02052
摘要： Methods for cleaning substrate surfaces utilized in SOI technology are provided. In one embodiment, the method for cleaning substrate surfaces includes providing a first substrate and a second substrate, wherein the first substrate has a silicon oxide layer formed thereon and a cleavage plane defined therein, performing a wet cleaning process on the surfaces of the first substrate and the second substrate, and bonding the cleaned silicon oxide layer to the cleaned surface of the second substrate.
摘要翻译：提供了用于清洁SOI技术中使用的衬底表面的方法。在一个实施例中，用于清洁衬底表面的方法包括提供第一衬底和第二衬底，其中第一衬底具有形成在其上的氧化硅层和限定在其中的解理面，在第一衬底的表面上进行湿式清洁处理和第二基板，并且将清洁的氧化硅层接合到第二基板的清洁表面。

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