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1. 发明授权

US5316278A Clamping ring apparatus for processing semiconductor wafers 失效
标题翻译：用于处理半导体晶圆的夹紧环装置
公开(公告)号：US5316278A
公开(公告)日：1994-05-31
申请号：US947212
申请日：1992-09-18
申请人： Semyon Sherstinsky , Mei Chang , Charles C. Harris , Alfred Mak , James F. Roberts , Simon W. Tam , Wen T. Chang
发明人： Semyon Sherstinsky , Mei Chang , Charles C. Harris , Alfred Mak , James F. Roberts , Simon W. Tam , Wen T. Chang
IPC分类号： H01L21/687 , B25B1/00
CPC分类号： H01L21/68721 , Y10S269/903
摘要： An improved clamping ring apparatus is disclosed comprising a clamping ring means for yieldably engaging a generally circular semiconductor wafer to peripherally clamp the wafer to a support pedestal to provide a peripheral seal between the wafer and the surface of the pedestal facing the wafer, adjacent the generally circular end edge of the wafer by providing a central generally circular opening in the clamping ring and a series of slots which radially extend outwardly from the central opening in the clamping ring means to thereby divide the inner portion of the clamping ring means into a series of yieldable fingers inwardly extending toward the central opening in the clamping ring means.In one embodiment, the sidewalls of the slots are slanted with respect to the planar surface of the clamping ring means at an angle sufficient, with respect to the thickness of the clamping ring means and the width of the slot,, to prevent a ray or a particle from a plasma, traveling in a direction perpendicular to the plane of the surface of the clamping ring means from striking surfaces underlying the clamping ring means, through the slot.
摘要翻译：公开了一种改进的夹紧环装置，其包括夹紧环装置，用于可屈服地接合大致圆形的半导体晶片以将晶片周边夹持到支撑基座，以在晶片与面对晶片的基座的表面之间提供周边密封，通过在夹紧环中提供中心大致圆形的开口，以及从夹紧环装置中的中心开口径向向外延伸的一系列槽，从而将夹紧环装置的内部分成一系列可伸缩的手指向内延伸朝向夹紧环装置中的中心开口。在一个实施例中，槽的侧壁相对于夹紧环装置的平坦表面以相对于夹紧环装置的厚度和槽的宽度足够的角度倾斜以防止光线或来自等离子体的颗粒通过狭槽从垂直于夹紧环装置的表面的平面的方向通过夹紧环装置下方的冲击表面行进。

2. 发明授权

US5671117A Electrostatic chuck 失效
标题翻译：静电吸盘
公开(公告)号：US5671117A
公开(公告)日：1997-09-23
申请号：US626667
申请日：1996-03-27
申请人： Semyon Sherstinsky , Shamouil Shamouilian , Manoocher Birang , Alfred Mak , Simon W. Tam
发明人： Semyon Sherstinsky , Shamouil Shamouilian , Manoocher Birang , Alfred Mak , Simon W. Tam
IPC分类号： B23Q3/15 , C23C16/458 , H01L21/00 , H01L21/683 , H02N13/00
CPC分类号： H02N13/00 , C23C16/4586 , H01L21/67109 , H01L21/6831 , H01L21/6833 , Y10T279/23 , Y10T29/49117
摘要： An electrostatic chuck for securing a semiconductor wafer on a pedestal having multiple apertures for the introduction of cooling gas beneath the wafer. The multiple apertures reduce overheating near the wafer edge and provide lower temperature gradients across the wafer. The wafer is held by electrostatic force against a laminate of an electrode layer sandwiched between two dielectric layers in such a way that the laminate presents a planar surface to the wafer for a substantial distance beyond the outer edge of the electrode layer. The laminate construction ensures that a large wafer area beyond the outer edge of the electrode is in contact with the laminate, to minimize cooling gas leakage near the edge, and provides a longer useful life by increasing the path length of dielectric material between the electrode layer and potentially damaging plasma material surrounding the chuck.
摘要翻译：一种用于将半导体晶片固定在具有多个孔的基座上以在晶片下方引入冷却气体的静电卡盘。多个孔径减小晶片边缘附近的过热，并在晶片上提供较低的温度梯度。晶片通过静电力抵抗夹在两个电介质层之间的电极层的层压体，使得层压体在晶片上呈现超过电极层的外边缘相当长的平面。层压结构确保了超过电极外边缘的大的晶片区域与层压体接触，以使边缘附近的冷却气体泄漏最小化，并且通过增加电极层之间的电介质材料的路径长度来提供更长的使用寿命并可能损坏卡盘周围的等离子体材料。

3. 发明授权

US5883778A Electrostatic chuck with fluid flow regulator 失效
标题翻译：带流体流量调节器的静电吸盘
公开(公告)号：US5883778A
公开(公告)日：1999-03-16
申请号：US503790
申请日：1995-07-18
申请人： Semyon Sherstinsky , John F. Cameron , Shamouil Shamouilian , Manoocher Birang , Alfred Mak , Simon W. Tam , Robert E. Ryan
发明人： Semyon Sherstinsky , John F. Cameron , Shamouil Shamouilian , Manoocher Birang , Alfred Mak , Simon W. Tam , Robert E. Ryan
IPC分类号： B23Q3/15 , C23C16/458 , H01L21/00 , H01L21/683 , H02N13/00
CPC分类号： H02N13/00 , C23C16/4586 , H01L21/67109 , H01L21/6831 , H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck 20 of the present invention is capable of maintaining substantially uniform temperatures across a substrate 30. The chuck 20 comprises an electrostatic member 35 that includes (i) an insulator 45 covering an electrode 40, (ii) a substantially planar and conformal contact surface 50 capable of conforming to a substrate 30, and (iii) conduits 105 terminating at the contact surface 50 for providing heat transfer fluid to the contact surface 50. Application of a voltage to the electrode 40 of the electrostatic member 35 electrostatically holds the substrate 30 on the conformal contact surface 50 to define an outer periphery 110 having (1) leaking portions 115 where heat transfer fluid leaks out, and (2) sealed portions 130 where heat transfer fluid substantially does not leak out. A fluid flow regulator 135 is provided for flowing heat transfer fluid at different flow rates through the conduits 105 in the electrostatic member 35 to provide (i) first flow rates of heat transfer fluid through the conduits 105 adjacent to the sealed portions 130 of the outer periphery 110 of the electrostatic member 35, and (ii) second flow rates of heat transfer fluid through the conduits 105 adjacent to the leaking portions 115, the second flow rates being higher than the first flow rates, to maintain substantially uniform temperatures across the substrate 30 held on the chuck 20.
摘要翻译：本发明的静电卡盘20能够在基板30上保持基本均匀的温度。卡盘20包括静电部件35，静电部件35包括（i）覆盖电极40的绝缘体45，（ii）基本上平面和保形接触能够与衬底30相符的表面50，以及（iii）终止于接触表面50处的导管105，用于将热传递流体提供给接触表面50.施加电压到静电构件35的电极40，静电地保持衬底 30，以形成具有（1）泄漏部分115（其中传热流体泄漏）的外周110，以及（2）传热流体基本上不会泄漏的密封部分130。提供流体流量调节器135，用于使不同流速的传热流体流过静电构件35中的管道105，以提供（i）传热流体通过与外部的密封部分130相邻的导管105的第一流量静电构件35的周边110，以及（ii）通过与泄漏部分115相邻的导管105的传热流体的第二流量，第二流速高于第一流速，以保持基本上均匀的温度 30夹在卡盘20上。

4. 发明授权

US5634266A Method of making a dielectric chuck 失效
标题翻译：制造电介质卡盘的方法
公开(公告)号：US5634266A
公开(公告)日：1997-06-03
申请号：US449135
申请日：1995-05-24
申请人： Semyon Sherstinsky , Shamouil Shamouilian , Manoocher Birang , Alfred Mak , Simon W. Tam
发明人： Semyon Sherstinsky , Shamouil Shamouilian , Manoocher Birang , Alfred Mak , Simon W. Tam
IPC分类号： B23Q3/15 , C23C16/458 , H01L21/00 , H01L21/683 , H02N13/00 , H01R43/00
CPC分类号： H02N13/00 , C23C16/4586 , H01L21/67109 , H01L21/6831 , H01L21/6833 , Y10T279/23 , Y10T29/49117
摘要： A method of making a dielectric chuck for securing a semiconductor wafer on a pedestal having multiple apertures for the introduction of cooling gas beneath the wafer. The wafer is held by electrostatic force against a laminate of an electrode layer sandwiched between two dielectric layers in accordance with the method, such that the laminate presents a planar surface to the wafer for a substantial distance beyond the outer edge of the electrode layer. The laminate construction method ensures that a large wafer area beyond the outer edge of the electrode is in contact with the laminate, to minimize cooling gas leakage near the edge, and provides a longer useful life by increasing the path length of dielectric material between the electrode layer and potentially damaging plasma material surrounding the chuck.
摘要翻译：一种制造用于将半导体晶片固定在具有多个孔的基座上用于在晶片下引入冷却气体的电介质卡盘的方法。根据该方法，晶片通过静电力保持在夹在两个电介质层之间的电极层的层压体上，使得层压体在晶片上呈现超过电极层的外边缘相当距离的平坦表面。层叠结构方法确保了超过电极外边缘的大晶圆区域与层压板接触，以使边缘附近的冷却气体泄漏最小化，并且通过增加电极之间的电介质材料的路径长度来提供更长的使用寿命层和可能损坏的卡盘周围的等离子体材料。

5. 发明授权

US6123864A Etch chamber 失效
标题翻译：蚀刻室
公开(公告)号：US6123864A
公开(公告)日：2000-09-26
申请号：US327126
申请日：1994-10-21
申请人： Simon W. Tam , Semyon Sherstinsky , Mei Chang , Alan Morrison , Ashok Sinha
发明人： Simon W. Tam , Semyon Sherstinsky , Mei Chang , Alan Morrison , Ashok Sinha
IPC分类号： H01L21/687 , H05H1/00
CPC分类号： H01L21/68721 , H01L21/68785 , H01J2237/022
摘要： A conventional plasma etch chamber is modified to reduce particulate generation in the chamber that contaminates the chamber and substrates mounted on a pedestal support being processed therein. A clamping ring cover in the chamber is made of ceramic. Grooves are machined into the cover and metal antennas can be mounted in the grooves to act as a getter for particles and pre-particle, non-volatile contaminants in the chamber. The clamping ring for the substrate being processed is also made of ceramic. Fewer particles are generated by ion bombardment using ceramic versus prior art clamping rings made of aluminum. Further, the cylinder clamping ring support which surrounds the pedestal support is fitted with a plurality of openings or windows to allow escape of purge gases that carry particles through the windows and into the adjoining exhaust system of the chamber and thus also away from the substrate being processed. Markedly fewer particles are deposited onto substrates using the modified plasma etch chamber of the invention than was found for unmodified chambers.
摘要翻译：修改常规等离子体蚀刻室以减少腔室中的颗粒产生，从而污染安装在其中处理的基座支撑件上的腔室和基底。腔室中的夹紧环盖由陶瓷制成。槽被加工成盖子，并且金属天线可以安装在凹槽中，以用作在室中的颗粒和预颗粒，非挥发性污染物的吸气剂。用于被处理的基板的夹紧环也由陶瓷制成。通过使用陶瓷的离子轰击产生的较少的颗粒与由铝制成的现有技术的夹紧环产生。此外，围绕基座支撑件的气缸夹紧环支撑装配有多个开口或窗口，以允许通过窗口携带颗粒的吹扫气体逸出并进入室的相邻排气系统，并且因此也远离基板处理。使用本发明的改进的等离子体蚀刻室，显着减少颗粒沉积到基板上，而不是未修改的室。

6. 发明授权

US06270621B1 Etch chamber 失效
标题翻译：蚀刻室
公开(公告)号：US06270621B1
公开(公告)日：2001-08-07
申请号：US09593018
申请日：2000-06-13
申请人： Simon W. Tam , Semyon Sherstinsky , Mei Chang , Alan Morrison , Ashok Sinha
发明人： Simon W. Tam , Semyon Sherstinsky , Mei Chang , Alan Morrison , Ashok Sinha
IPC分类号： H01L2100
CPC分类号： H01L21/68721 , H01J2237/022 , H01L21/68785
摘要： A conventional plasma etch chamber is modified to reduce particulate generation in the chamber that contaminates the chamber and substrates mounted on a pedestal support being processed therein. A clamping ring cover in the chamber is made of ceramic. Grooves are machined into the cover and metal antennas can be mounted in the grooves to act as a getter for particles and pre-particle, non-volatile contaminants in the chamber. The clamping ring for the substrate being processed is also made of ceramic. Fewer particles are generated by ion bombardment using ceramic versus prior art clamping rings made of aluminum. Further, the cylinder clamping ring support which surrounds the pedestal support is fitted with a plurality of openings or windows to allow escape of purge gases that carry particles through the windows and into the adjoining exhaust system of the chamber and thus also away from the substrate being processed. Markedly fewer particles are deposited onto substrates using the modified plasma etch chamber of the invention than was found for unmodified chambers.
摘要翻译：修改常规等离子体蚀刻室以减少腔室中的颗粒产生，从而污染安装在其中处理的基座支撑件上的腔室和基底。腔室中的夹紧环盖由陶瓷制成。槽被加工成盖子，并且金属天线可以安装在凹槽中，以用作在室中的颗粒和预颗粒，非挥发性污染物的吸气剂。用于被处理的基板的夹紧环也由陶瓷制成。通过使用陶瓷的离子轰击产生的较少的颗粒与由铝制成的现有技术的夹紧环产生。此外，围绕基座支撑件的气缸夹紧环支撑装配有多个开口或窗口，以允许通过窗口携带颗粒的吹扫气体逸出并进入室的相邻排气系统，并且因此也远离基板处理。使用本发明的改进的等离子体蚀刻室，显着减少颗粒沉积到基板上，而不是未修改的室。

7. 发明授权

US4613400A In-situ photoresist capping process for plasma etching 失效
标题翻译：用于等离子体蚀刻的原位光刻胶封盖工艺
公开(公告)号：US4613400A
公开(公告)日：1986-09-23
申请号：US736435
申请日：1985-05-20
申请人： Simon W. Tam , Ronald P. Reade , Jerry Y. K. Wong , David N. Wang
发明人： Simon W. Tam , Ronald P. Reade , Jerry Y. K. Wong , David N. Wang
IPC分类号： C30B33/12 , C23F1/00 , C23F4/00 , C30B33/00 , G03F7/40 , H01L21/308 , H01L21/3105 , H01L21/311 , H01L21/306 , B05D3/06 , B44C1/22 , C03C15/00
CPC分类号： H01L21/3086 , G03F7/40 , H01L21/31058 , H01L21/31138
摘要： A two-step photoresist capping process for enhancing the etch resistance of photoresist during chlorinated plasma etching of silicon-containing materials comprises exposing the photoresist to a chlorinated plasma to form a silicon-chlorine containing material on the photoresist, and then exposing the resulting layer to an oxidizing plasma containing a chlorine etching species to selectivity oxidize the capping layer.
摘要翻译：在含硅材料的氯化等离子体蚀刻期间用于增强光致抗蚀剂的耐蚀刻性的两步光刻胶封盖方法包括将光致抗蚀剂暴露于氯化等离子体以在光致抗蚀剂上形成含硅氯材料，然后将所得层暴露于含有氯蚀刻物质的氧化等离子体选择性地氧化覆盖层。

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