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1. 发明授权

US5989349A Diagnostic pedestal assembly for a semiconductor wafer processing system 失效
标题翻译：用于半导体晶片处理系统的诊断基座组件
公开(公告)号：US5989349A
公开(公告)日：1999-11-23
申请号：US881601
申请日：1997-06-24
申请人： Kuang-Han Ke , Roger A. Lindley , Hongching Shan , Richard R. Mett
发明人： Kuang-Han Ke , Roger A. Lindley , Hongching Shan , Richard R. Mett
IPC分类号： H01L21/66 , H01J37/32 , H01L21/00 , H01L21/687 , C23C16/00
CPC分类号： H01L21/67109 , H01J37/32935 , H01L21/67253 , H01L21/68785 , H01J2237/244
摘要： A diagnostic pedestal assembly for measuring ion current and DC bias voltage within a high-power plasma reaction chamber of a semiconductor wafer processing system. The diagnostic pedestal assembly contains an aperture located in a surface of the pedestal and a probe element that is supported within the aperture.
摘要翻译：一种用于测量半导体晶片处理系统的大功率等离子体反应室内的离子电流和DC偏置电压的诊断基座组件。诊断基座组件包括位于基座的表面中的孔和支撑在孔内的探针元件。

2. 发明授权

US06284093B1 Shield or ring surrounding semiconductor workpiece in plasma chamber 有权
标题翻译：在等离子体室内围绕半导体工件的屏蔽或环
公开(公告)号：US06284093B1
公开(公告)日：2001-09-04
申请号：US09665484
申请日：2000-09-20
申请人： Kuang-Han Ke , Bryan Y. Pu , Hongching Shan , James Wang , Henry Fong , Zongyu Li , Michael D. Welch
发明人： Kuang-Han Ke , Bryan Y. Pu , Hongching Shan , James Wang , Henry Fong , Zongyu Li , Michael D. Welch
IPC分类号： H01J100
CPC分类号： H01L21/67126 , H01J37/32623 , H01J37/32633 , H01J37/3266 , H01L21/6831 , H01L21/6833 , H01L21/68721 , H01L21/68735 , H02N13/00 , Y10S156/915
摘要： A ring or collar surrounding a semiconductor workpiece in a plasma chamber. According to one aspect, the ring has an elevated collar portion having an inner surface oriented at an obtuse angle to the plane of the workpiece, this angle preferably being 135°. This angular orientation causes ions bombarding the inner surface of the elevated collar to scatter in a direction more parallel to the plane of the workpiece, thereby reducing erosion of any dielectric shield at the perimeter of the workpiece, and ameliorating spatial non-uniformity in the plasma process due to any excess ion density near such perimeter. In a second aspect, the workpiece is surrounded by a dielectric shield, and the shield is covered by a non-dielectric ring which protects the dielectric shield from reaction with, or erosion by, the process gases. In a third aspect, the dielectric shield is thin enough to couple substantial power from the cathode to the plasma, thereby improving spatial uniformity of the plasma process near the perimeter of the workpiece. In a fourth aspect, azimuthal non-uniformities in process performance can be ameliorated by corresponding azimuthal variations in the dimensions of the elevated collar and/or the dielectric shield surrounding the workpiece.
摘要翻译：围绕等离子体室中的半导体工件的环或环。根据一个方面，所述环具有提升的套环部分，其内表面以与工件的平面成钝角定向，该角度优选为135°。这种角度取向导致离子轰击提升的轴环的内表面沿更平行于工件的平面的方向散射，从而减少工件周边处的任何介电屏蔽的侵蚀，并且改善等离子体中的空间不均匀性由于这种周边附近的任何过量的离子密度而产生的过程。在第二方面，工件被电介质屏蔽围绕，屏蔽被非介电环覆盖，该绝缘环保护介电屏蔽免受过程气体的反应或腐蚀。在第三方面中，电介质屏蔽体足够薄以将来自阴极的实质功率耦合到等离子体，从而改善靠近工件周边的等离子体工艺的空间均匀性。在第四方面，方法性能的方位不均匀性可以通过围绕工件的高架轴环和/或介电屏蔽的尺寸的相应的方位角变化来改善。

3. 发明授权

US5740009A Apparatus for improving wafer and chuck edge protection 失效
标题翻译：用于改善晶片和卡盘边缘保护的装置
公开(公告)号：US5740009A
公开(公告)日：1998-04-14
申请号：US758531
申请日：1996-11-29
申请人： Bryan Pu , Hongching Shan , Kuang-Han Ke , Michael Welch , Semyon Sherstinsky , Alfred Mak , Ling Chen , Sue Zhang , Leonel Arturo Zuniga , Samuel C. Wilson
发明人： Bryan Pu , Hongching Shan , Kuang-Han Ke , Michael Welch , Semyon Sherstinsky , Alfred Mak , Ling Chen , Sue Zhang , Leonel Arturo Zuniga , Samuel C. Wilson
IPC分类号： H01L21/683 , H01L21/687 , H02N13/00
CPC分类号： H01L21/68735 , H01L21/6831 , H01L21/6833 , H02N13/00
摘要： Apparatus for retaining a wafer having improved wafer and chuck edge protection, contains an protection ring that circumscribes a pedestal and is biased to be in constant contact with the backside of the wafer. A biasing element uniformly biases the protection ring into contact with the circumferential edge of the wafer. The protection ring has an annular plan form that circumscribes an electrostatic chuck for retaining the wafer in a stationery position. Vertical travel of the ring is restricted by a hard stop that is formed by a portion of a focus ring which overhangs the protection ring. After a wafer is placed upon the chuck and the chucking force enabled, the chucking force easily overcomes the bias force upon the protection ring and the wafer rests upon the chuck support surface. The protection ring contacts the backside of the wafer to ensure that pedestal and electrostatic chuck are not exposed to the plasma and, when a silicon protection ring is used, the effective area of the wafer is extended beyond the physical dimensions of the wafer to facilitate a more uniform plasma distribution over the wafer.
摘要翻译：用于保持具有改进的晶片和卡盘边缘保护的晶片的装置包含限定基座的保护环，并被偏置以与晶片的背面恒定接触。偏置元件均匀地将保护环偏压成与晶片的周缘接触。保护环具有环形平面形式，其环绕静电卡盘以将晶片保持在文具位置。环的垂直行程受到由突出于保护环上的聚焦环的一部分形成的硬停止的限制。在将晶片放置在卡盘上并且夹持力能够实现之后，夹紧力容易地克服保护环上的偏压力并且晶片搁置在卡盘支撑表面上。保护环接触晶片的背面以确保基座和静电卡盘不暴露于等离子体，并且当使用硅保护环时，晶片的有效面积延伸超过晶片的物理尺寸以便于在晶片上更均匀的等离子体分布。

4. 发明授权

US6113731A Magnetically-enhanced plasma chamber with non-uniform magnetic field 失效
标题翻译：具有不均匀磁场的磁增强等离子体室
公开(公告)号：US6113731A
公开(公告)日：2000-09-05
申请号：US735444
申请日：1997-01-02
申请人： Hongching Shan , Roger Lindley , Claes Bjorkman , Xue Yu Qian , Richard Plavidal , Bryan Pu , Ji Ding , Zongyu Li , Kuang-Han Ke , Michael Welch
发明人： Hongching Shan , Roger Lindley , Claes Bjorkman , Xue Yu Qian , Richard Plavidal , Bryan Pu , Ji Ding , Zongyu Li , Kuang-Han Ke , Michael Welch
IPC分类号： H05H1/46 , H01J37/32 , H01L21/00 , H01L21/02 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/687 , C23F1/02
CPC分类号： H01L21/67069 , H01J37/32623 , H01J37/3266 , H01L21/68735
摘要： A plasma chamber having a magnet which produces a magnetic field such that, within a region parallel to and adjacent to the workpiece, the direction of the magnetic field is approximately the vector cross product of (i) the gradient of the magnitude of the magnetic field, and (ii) a vector extending perpendicularly from the workpiece surface toward the plasma. Alternatively, the plasma chamber includes a north magnetic pole and a south magnetic pole located at distinct azimuths around the periphery of the workpiece. The azimuth of the south magnetic pole relative to the north magnetic pole is clockwise around the central axis, and each magnetic pole faces a direction which is more toward than away from a central axis of the workpiece area. An additional aspect of the invention is a plasma chamber having a rotating magnetic field produced by electromagnets spaced around the periphery of the workpiece which receive successive fixed amounts of electrical current during successive time intervals. During each transition between the time intervals, the current supplied to each electromagnet is changed relatively slowly or relatively quickly according to whether the current change includes a change in polarity.
摘要翻译：具有磁体的等离子体室产生磁场，使得在与工件平行并邻近工件的区域内，磁场的方向近似为（i）磁场强度梯度的矢量交叉积，和（ii）从工件表面朝向等离子体垂直延伸的矢量。或者，等离子体室包括北磁极和位于工件周围的不同方位角处的南磁极。南磁极相对于北磁极的方位角是围绕中心轴顺时针旋转的，每个磁极面对的方向远离工件区域的中心轴线。本发明的另一方面是等离子体室，其具有由围绕工件周边间隔开的电磁体产生的旋转磁场，其在连续的时间间隔期间接收连续的固定量的电流。在时间间隔期间的每个转换期间，根据电流变化是否包括极性变化，提供给每个电磁体的电流相对缓慢或相对较快地改变。

5. 发明授权

US06689249B2 Shield or ring surrounding semiconductor workpiece in plasma chamber 有权
标题翻译：在等离子体室内围绕半导体工件的屏蔽或环
公开(公告)号：US06689249B2
公开(公告)日：2004-02-10
申请号：US09947194
申请日：2001-09-04
申请人： Kuang-Han Ke , Bryan Y. Pu , Hongching Shan , James Wang , Henry Fong , Zongyu Li , Michael D. Welch
发明人： Kuang-Han Ke , Bryan Y. Pu , Hongching Shan , James Wang , Henry Fong , Zongyu Li , Michael D. Welch
IPC分类号： C23F108
CPC分类号： H01L21/67126 , H01J37/32623 , H01J37/32633 , H01J37/3266 , H01L21/6831 , H01L21/6833 , H01L21/68721 , H01L21/68735 , H02N13/00 , Y10S156/915
摘要： A ring or collar surrounding a semiconductor workpiece in a plasma chamber. According to one aspect, the ring has an elevated collar portion having an inner surface oriented at an obtuse angle to the plane of the workpiece, this angle preferably being 135°. This angular orientation causes ions bombarding the inner surface of the elevated collar to scatter in a direction more parallel to the plane of the workpiece, thereby reducing erosion of any dielectric shield at the perimeter of the workpiece, and ameliorating spatial non-uniformity in the plasma process due to any excess ion density near such perimeter. In a second aspect, the workpiece is surrounded by a dielectric shield, and the shield is covered by a non-dielectric ring which protects the dielectric shield from reaction with, or erosion by, the process gases. In a third aspect, the dielectric shield is thin enough to couple substantial power from the cathode to the plasma, thereby improving spatial uniformity of the plasma process near the perimeter of the workpiece. In a fourth aspect, azimuthal non-uniformities in process performance can be ameliorated by corresponding azimuthal variations in the dimensions of the elevated collar and/or the dielectric shield surrounding the workpiece.
摘要翻译：围绕等离子体室中的半导体工件的环或环。根据一个方面，所述环具有提升的套环部分，其内表面以与工件的平面成钝角定向，该角度优选为135°。这种角度取向导致离子轰击提升的套环的内表面沿更平行于工件的平面的方向散射，从而减少工件周边处的任何介电屏蔽的侵蚀，并且改善等离子体中的空间不均匀性由于这种周边附近的任何过量的离子密度而产生的过程。在第二方面，工件被电介质屏蔽围绕，屏蔽被非介电环覆盖，该绝缘环保护介电屏蔽免受过程气体的反应或腐蚀。在第三方面中，电介质屏蔽体足够薄以将来自阴极的实质功率耦合到等离子体，从而改善靠近工件周边的等离子体工艺的空间均匀性。在第四方面，方法性能的方位不均匀性可以通过围绕工件的高架轴环和/或介电屏蔽的尺寸的相应的方位角变化来改善。

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