专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5835334A Variable high temperature chuck for high density plasma chemical vapor deposition 失效
标题翻译：用于高密度等离子体化学气相沉积的可变高温卡盘
公开(公告)号：US5835334A
公开(公告)日：1998-11-10
申请号：US724005
申请日：1996-09-30
申请人： Brian McMillin , Michael Barnes , Butch Berney , Huong Nguyen
发明人： Brian McMillin , Michael Barnes , Butch Berney , Huong Nguyen
IPC分类号： H01L21/68 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck comprises an electrode cap with a dielectric layer for attracting and holding the back side of a semiconductor wafer positioned on the top surface of the dielectric layer, and a lower electrode. The electrostatic chuck is heated by resistive heating elements attached to or embedded within the chuck. The electrostatic chuck is cooled by circulating liquid coolant through the body of the chuck. Coolant gas is provided at the back side of the semiconductor wafer to improve thermal transfer. A feedback control mechanism maintains the chuck, and consequently the wafer, at a predetermined temperature by actively controlling both the heating and the cooling functions.
摘要翻译：静电卡盘包括具有用于吸引并保持位于电介质层的顶表面上的半导体晶片的背面的电介质层的电极帽和下电极。静电卡盘被附着在卡盘内或嵌入卡盘内的电阻加热元件加热。通过将液体冷却剂循环通过卡盘的主体来冷却静电卡盘。冷却剂气体设置在半导体晶片的背面，以改善热转印。反馈控制机构通过主动地控制加热和冷却功能来将卡盘以及因此的晶片维持在预定温度。

2. 发明授权

US06270862B1 Method for high density plasma chemical vapor deposition of dielectric films 有权
标题翻译：介电膜高密度等离子体化学气相沉积方法
公开(公告)号：US06270862B1
公开(公告)日：2001-08-07
申请号：US09359639
申请日：1999-07-26
申请人： Brian McMillin , Huong Nguyen , Michael Barnes , Butch Berney
发明人： Brian McMillin , Huong Nguyen , Michael Barnes , Butch Berney
IPC分类号： H05H124
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45572 , C23C16/45578 , C23C16/507 , C30B25/105 , C30B25/14 , H01J37/321 , H01J37/3244
摘要： A plasma processing system for processes such as chemical vapor deposition includes a plasma processing chamber, a substrate holder for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate holder, the dielectric member forming a wall of the processing chamber a gas supply for supplying gas to the chamber, directed towards the substrate, and an RF energy source such as a planar coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The gas supply may comprise a primary gas ring and a secondary gas ring for supplying gases or gas mixtures into the chamber. The gas supply may further include injectors attached to the primary gas ring which inject gas into the chamber, directed toward the substrate. The plasma processing system may also include a cooling mechanism for cooling the primary gas ring during processing.
摘要翻译：用于诸如化学气相沉积的工艺的等离子体处理系统包括等离子体处理室，用于在处理室内支撑衬底的衬底保持器，具有面向衬底保持器的内表面的电介质构件，形成处理壁的电介质构件将用于向腔室供应气体的气体供给，朝向衬底，以及诸如平面线圈的RF能量源，其将RF能量感应耦合通过电介质构件并进入腔室，以将处理气体激励成等离子体状态。气体供应可以包括用于将气体或气体混合物供应到室中的初级气体环和次级气体环。气体供应还可以包括连接到主气环的喷射器，其将气体注入到腔室中，指向基底。等离子体处理系统还可以包括用于在处理期间冷却主气环的冷却机构。

3. 发明授权

US06184158B2 Inductively coupled plasma CVD 失效
公开(公告)号：US06184158B2
公开(公告)日：2001-02-06
申请号：US08772374
申请日：1996-12-23
申请人： Paul Kevin Shufflebotham , Brian McMillin , Alex Demos , Huong Nguyen , Butch Berney , Monique Ben-Dor
发明人： Paul Kevin Shufflebotham , Brian McMillin , Alex Demos , Huong Nguyen , Butch Berney , Monique Ben-Dor
IPC分类号： H01J3732
CPC分类号： H01J37/321 , C23C16/402 , C23C16/507 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/02301 , H01L21/02315 , H01L21/02362 , H01L21/31612 , H01L21/76837 , Y10S438/902 , Y10S438/906
摘要： A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.

4. 发明授权

US06692649B2 Inductively coupled plasma downstream strip module 有权
公开(公告)号：US06692649B2
公开(公告)日：2004-02-17
申请号：US09765920
申请日：2001-01-18
申请人： Wenli Z. Collison , Michael S. Barnes , Tuqiang O. Ni , Butch Berney , Wayne W. Vereb , Brian K. McMillin
发明人： Wenli Z. Collison , Michael S. Barnes , Tuqiang O. Ni , Butch Berney , Wayne W. Vereb , Brian K. McMillin
IPC分类号： H01L2100
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/32357 , H01J37/3244
摘要： A plasma processing module for processing a substrate includes a plasma containment chamber having a feed gas inlet port capable of allowing a feed gas to enter the plasma containment chamber of the plasma processing module during the processing of the substrate. An inductively coupled source is used to energize the feed gas and striking a plasma within the plasma containment chamber. The specific configuration of the inductively coupled source causes the plasma to be formed such that the plasma includes a primary dissociation zone within the plasma containment chamber. A secondary chamber is separated from the plasma containment chamber by a plasma containment plate. The secondary chamber includes a chuck and an exhaust port. The chuck is configured to support the substrate during the processing of the substrate and the exhaust port is connected to the secondary chamber such that the exhaust port allows gases to be removed from the secondary chamber during the processing of the substrate. A chamber interconnecting port interconnects the plasma containment chamber and the secondary chamber. The chamber interconnecting port allows gases from the plasma containment chamber to flow into the secondary chamber during the processing of the substrate. The chamber interconnecting port is positioned between the plasma containment chamber and the secondary chamber such that, when the substrate is positioned on the chuck in the secondary chamber, there is no substantial direct line-of-sight exposure of the substrate to the primary dissociation zone of the plasma formed within the plasma containment chamber.

5. 发明授权

US07611640B1 Minimizing arcing in a plasma processing chamber 有权
标题翻译：最小化等离子体处理室中的电弧
公开(公告)号：US07611640B1
公开(公告)日：2009-11-03
申请号：US11396124
申请日：2006-03-30
申请人： Arthur M Howald , Andras Kuthi , Andrew D. Bailey, III , Butch Berney
发明人： Arthur M Howald , Andras Kuthi , Andrew D. Bailey, III , Butch Berney
IPC分类号： C23F1/00 , H01L21/3065
CPC分类号： H01J37/32477 , H01J37/32623
摘要： A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward a plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.
摘要翻译：公开了一种用于处理基板以在其上形成电子部件的等离子体处理室。等离子体处理室包括在基板处理期间具有朝向等离子体处理室中的等离子体的表面等离子体表面的等离子体面向部件，等离子体面向部件与接地端子电隔离。等离子体处理室还包括耦合到等离子体面向部件的接地装置，接地装置包括设置在等离子体面向部件和接地端子之间的第一电流路径中的第一电阻电路。接地装置还包括设置在等离子体面向部件和接地端子之间的至少一个其它电流通路中的RF滤波器装置，其中选择第一电阻电路的电阻值以基本上消除等离子体和等离子体 - 在处理基板期间面对部件。

6. 发明授权

US07086347B2 Apparatus and methods for minimizing arcing in a plasma processing chamber 有权
公开(公告)号：US07086347B2
公开(公告)日：2006-08-08
申请号：US10140618
申请日：2002-05-06
申请人： Arthur M. Howald , Andras Kuthi , Andrew D. Bailey, III , Butch Berney
发明人： Arthur M. Howald , Andras Kuthi , Andrew D. Bailey, III , Butch Berney
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01J37/32477 , H01J37/32623
摘要： A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward a plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.

7. 发明授权

US06203657B1 Inductively coupled plasma downstream strip module 失效
标题翻译：电感耦合等离子体下游带模块
公开(公告)号：US06203657B1
公开(公告)日：2001-03-20
申请号：US09052906
申请日：1998-03-31
申请人： Wenli Z. Collison , Michael S. Barnes , Tuqiang Q. Ni , Butch Berney , Wayne W. Vereb , Brian K. McMillin
发明人： Wenli Z. Collison , Michael S. Barnes , Tuqiang Q. Ni , Butch Berney , Wayne W. Vereb , Brian K. McMillin
IPC分类号： C23F102
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/32357 , H01J37/3244
摘要： A plasma processing module for processing a substrate includes a plasma containment chamber having a feed gas inlet port capable of allowing a feed gas to enter the plasma containment chamber of the plasma processing module during the processing of the substrate. An inductively coupled source is used to energize the feed gas and striking a plasma within the plasma containment chamber. The specific configuration of the inductively coupled source causes the plasma to be formed such that the plasma includes a primary dissociation zone within the plasma containment chamber. A secondary chamber is separated from the plasma containment chamber by a plasma containment plate. The secondary chamber includes a chuck and an exhaust port. The chuck is configured to support the substrate during the processing of the substrate and the exhaust port is connected to the secondary chamber such that the exhaust port allows gases to be removed from the secondary chamber during the processing of the substrate. A chamber interconnecting port interconnects the plasma containment chamber and the secondary chamber. The chamber interconnecting port allows gases from the plasma containment chamber to flow into the secondary chamber during the processing of the substrate. The chamber interconnecting port is positioned between the plasma containment chamber and the secondary chamber such that, when the substrate is positioned on the chuck in the secondary chamber, there is no substantial direct line-of-sight exposure of the substrate to the primary dissociation zone of the plasma formed within the plasma containment chamber.
摘要翻译：用于处理衬底的等离子体处理模块包括等离子体容纳室，其具有能够在衬底处理期间允许进料气体进入等离子体处理模块的等离子体容纳室的进料气体入口。电感耦合源用于对进料气体进行激励并且在等离子体容纳室内打入等离子体。电感耦合源的特定配置导致形成等离子体，使得等离子体包括等离子体容纳室内的主离解区。二级室通过等离子体容纳板与等离子体容纳室分离。次级室包括卡盘和排气口。卡盘被配置为在基板的处理期间支撑基板，并且排气口连接到副室，使得排气口允许在基板的处理期间从第二室中除去气体。室互连端口将等离子体容纳室和次室互连。腔室互连端口允许来自等离子体容纳室的气体在衬底的处理期间流入次室。腔室互连端口位于等离子体容纳室和次级室之间，使得当衬底定位在次级室中的卡盘上时，基底没有相当大的直接视线暴露于初级解离区的等离子体容纳室内形成的等离子体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式