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1. 发明授权

US06184158B2 Inductively coupled plasma CVD 失效
公开(公告)号：US06184158B2
公开(公告)日：2001-02-06
申请号：US08772374
申请日：1996-12-23
申请人： Paul Kevin Shufflebotham , Brian McMillin , Alex Demos , Huong Nguyen , Butch Berney , Monique Ben-Dor
发明人： Paul Kevin Shufflebotham , Brian McMillin , Alex Demos , Huong Nguyen , Butch Berney , Monique Ben-Dor
IPC分类号： H01J3732
CPC分类号： H01J37/321 , C23C16/402 , C23C16/507 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/02301 , H01L21/02315 , H01L21/02362 , H01L21/31612 , H01L21/76837 , Y10S438/902 , Y10S438/906
摘要： A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.

2. 发明授权

US06626185B2 Method of depositing a silicon containing layer on a semiconductor substrate 有权
标题翻译：在半导体衬底上沉积含硅层的方法
公开(公告)号：US06626185B2
公开(公告)日：2003-09-30
申请号：US09262019
申请日：1999-03-04
申请人： Alex Demos , Paul Kevin Shufflebotham , Michael Barnes , Huong Nguyen , Brian McMillin , Monique Ben-Dor
发明人： Alex Demos , Paul Kevin Shufflebotham , Michael Barnes , Huong Nguyen , Brian McMillin , Monique Ben-Dor
IPC分类号： B08B704
CPC分类号： H01J37/32862 , C23C16/4405 , Y10S438/905
摘要： A plasma cleaning method for removing deposits in a CVD chamber. The method includes introducing a cleaning gas comprising a fluorine-based gas into the chamber. A plasma is formed by exposing the cleaning gas to an inductive field generated by resonating a radio frequency current in a RF antenna coil. A plasma cleaning step is performed by contacting interior surfaces of the chamber with the plasma for a time sufficient to remove the deposits on the interior surfaces. An advantage of the plasma cleaning method is that it allows for in-situ cleaning of the chamber at high rates, thereby effectively reducing equipment downtime. The method has particular applicability in the cleaning of a PECVD process chamber.
摘要翻译：一种用于去除CVD室中的沉积物的等离子体清洁方法。该方法包括将包含氟基气体的清洁气体引入室中。通过将清洁气体暴露于通过使RF天线线圈中的射频电流谐振而产生的感应场而形成等离子体。通过使室的内表面与等离子体接触足以消除内表面上的沉积物的时间来进行等离子体清洗步骤。等离子体清洗方法的一个优点是可以高速率地对腔室进行原位清洗，从而有效地减少设备停机时间。该方法在PECVD处理室的清洁中具有特别的适用性。

3. 发明授权

US08025731B2 Gas injection system for plasma processing 有权
标题翻译：用于等离子体处理的气体注入系统
公开(公告)号：US08025731B2
公开(公告)日：2011-09-27
申请号：US12805865
申请日：2010-08-20
申请人： Tuqiang Ni , Alex Demos
发明人： Tuqiang Ni , Alex Demos
IPC分类号： C23C16/455 , C23C16/44 , C23C16/06 , C23C16/22
CPC分类号： H01J37/3244
摘要： A plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas injector fixed to, part of or removably mounted in an opening in the dielectric window, the gas injector including a plurality of gas outlets supplying process gas into the chamber, and an RF energy source such as a planar or non-planar spiral coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The arrangement permits modification of gas delivery arrangements to meet the needs of a particular processing regime. In addition, compared to consumable showerhead arrangements, the use of a removably mounted gas injector can be replaced more easily and economically.
摘要翻译：用于诸如半导体晶片的衬底等离子体处理的等离子体处理系统。该系统包括等离子体处理室，用于在处理室内支撑衬底的衬底支撑体，具有面向衬底支撑件的内表面的电介质构件，形成处理室壁的电介质构件，固定到部分可拆卸地安装在电介质窗口的开口中，气体注射器包括向工作室供应工艺气体的多个气体出口，以及诸如平面或非平面螺旋线圈的RF能量源，其将RF能量感应耦合通过电介质构件并进入室以使处理气体激发成等离子体状态。该安排允许修改气体输送装置以满足特定处理制度的需要。此外，与消耗式喷头装置相比，可以更容易且经济地更换可拆卸安装的气体喷射器的使用。

4. 发明授权

US6028395A Vacuum plasma processor having coil with added conducting segments to its peripheral part 失效
标题翻译：具有线圈的真空等离子体处理器，其周边部分具有附加的导电段
公开(公告)号：US6028395A
公开(公告)日：2000-02-22
申请号：US931504
申请日：1997-09-16
申请人： John Patrick Holland , Alex Demos
发明人： John Patrick Holland , Alex Demos
IPC分类号： H05H1/46 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01J7/24
CPC分类号： H01J37/321
摘要： A vacuum plasma processor for treating a workpiece with an RF plasma has a plasma excitation coil including a peripheral portion supplying a substantial magnetic flux density to peripheral portions of the plasma. Additional conducting segments spatially adjacent to and electrically connected to a segment of the peripheral portion supply additional magnetic flux having a substantial magnetic flux density to the plasma peripheral portions. The additional conductor segments are in each of four corners of the coil, being connected electrically in parallel or series to coil conductor segments forming the corners. In another embodiment, the coil includes several nested conducting corner segments. In different embodiments, the corner segments are (1) coplanar with the remainder of the coil and (2) closer to the plasma than the remainder of the coil. The coil includes two electrically parallel, spiral like windings, each with an interior terminal connected to one output terminal of a matching network and an output terminal connected via a capacitor to another output terminal of the matching network. The capacitor values and the lengths of the windings relative to the plasma RF excitation wavelength are such that current flowing in the coil has maximum and minimum standing wave values in the peripheral and interior coil portions, respectively. The coil and workpiece peripheries have similar rectangular dimensions and geometries.
摘要翻译：用于用RF等离子体处理工件的真空等离子体处理器具有等离子体激励线圈，该等离子体激励线圈包括向等离子体的周边部分提供大量磁通密度的周边部分。在周边部分的空间上与空间上相邻并且电连接的附加导电段向等离子体周边部分提供具有大量磁通密度的附加磁通量。附加的导体段在线圈的四个角中的每一个中，并联或串联连接到形成拐角的线圈导体段。在另一个实施例中，线圈包括若干个嵌套导电拐角部分。在不同的实施例中，拐角段是（1）与线圈的其余部分共面，和（2）比线圈的其余部分更接近等离子体。线圈包括两个电平行的螺旋状绕组，每个具有连接到匹配网络的一个输出端子的内部端子和经由电容器连接到匹配网络的另一个输出端子的输出端子。绕组相对于等离子体RF激发波长的电容器值和长度使得在线圈中流动的电流分别在周边和内部线圈部分中具有最大和最小的驻波值。线圈和工件外围具有类似的矩形尺寸和几何形状。

5. 发明授权

US07785417B2 Gas injection system for plasma processing 有权
标题翻译：用于等离子体处理的气体注入系统
公开(公告)号：US07785417B2
公开(公告)日：2010-08-31
申请号：US09788365
申请日：2001-02-21
申请人： Tuqiang Ni , Alex Demos
发明人： Tuqiang Ni , Alex Demos
IPC分类号： C23C16/455 , C23C16/44 , C23C16/06 , C23C16/22
CPC分类号： H01J37/3244
摘要： A plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas injector fixed to, part of or removably mounted in an opening in the dielectric window, the gas injector including a plurality of gas outlets supplying process gas into the chamber, and an RF energy source such as a planar or non-planar spiral coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The arrangement permits modification of gas delivery arrangements to meet the needs of a particular processing regime. In addition, compared to consumable showerhead arrangements, the use of a removably mounted gas injector can be replaced more easily and economically.
摘要翻译：用于诸如半导体晶片的衬底等离子体处理的等离子体处理系统。该系统包括等离子体处理室，用于在处理室内支撑衬底的衬底支撑体，具有面向衬底支撑件的内表面的电介质构件，形成处理室壁的电介质构件，固定到部分可拆卸地安装在电介质窗口的开口中，气体注射器包括向工作室供应工艺气体的多个气体出口，以及诸如平面或非平面螺旋线圈的RF能量源，其将RF能量感应耦合通过电介质构件并进入室以使处理气体激发成等离子体状态。该安排允许修改气体输送装置以满足特定处理制度的需要。此外，与消耗式喷头装置相比，可以更容易且经济地更换可拆卸安装的气体喷射器的使用。

6. 发明授权

US06268700B1 Vacuum plasma processor having coil with intermediate portion coupling lower magnetic flux density to plasma than center and peripheral portions of the coil 失效
标题翻译：具有中间部分的线圈的真空等离子体处理器将等离子体的磁通密度降低到线圈的中心部分和周边部分
公开(公告)号：US06268700B1
公开(公告)日：2001-07-31
申请号：US08931503
申请日：1997-09-16
申请人： John Patrick Holland , Alex Demos
发明人： John Patrick Holland , Alex Demos
IPC分类号： H31J724
CPC分类号： H01J37/321
摘要： A vacuum plasma processor for treating a workpiece with an RF plasma has a plasma excitation coil including interior, intermediate and peripheral portions. The interior and peripheral portions have turns connected to each other and arranged so the magnetic flux density coupled to the plasma by each of the interior and peripheral coil portions exceeds the magnetic flux density coupled to the plasma by the intermediate coil portion. The coil includes two electrically parallel, spiral like windings, each with an interior terminal connected to one output terminal of a matching network and an output terminal connected via a capacitor to another output terminal of the matching network. The capacitor values and the lengths of the windings relative to the plasma RF excitation wavelength are such that current flowing in the coil has maximum and minimum standing wave values in the peripheral and interior coil portions, respectively. The coil and workpiece peripheries have similar rectangular dimensions and geometries.
摘要翻译：用于用RF等离子体处理工件的真空等离子体处理器具有包括内部，中间和周边部分的等离子体激励线圈。内部和外围部分具有彼此连接并且布置成通过内部和外部线圈部分中的每一个耦合到等离子体的磁通密度超过通过中间线圈部分耦合到等离子体的磁通密度。线圈包括两个电平行的螺旋状绕组，每个具有连接到匹配网络的一个输出端子的内部端子和经由电容器连接到匹配网络的另一个输出端子的输出端子。绕组相对于等离子体RF激发波长的电容器值和长度使得在线圈中流动的电流分别在周边和内部线圈部分中具有最大和最小的驻波值。线圈和工件外围具有类似的矩形尺寸和几何形状。

7. 发明授权

US06230651B1 Gas injection system for plasma processing 有权
公开(公告)号：US06230651B1
公开(公告)日：2001-05-15
申请号：US09223273
申请日：1998-12-30
申请人： Tuqiang Ni , Alex Demos
发明人： Tuqiang Ni , Alex Demos
IPC分类号： C23C16507
CPC分类号： H01J37/3244
摘要： A plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas injector fixed to, part of or removably mounted in an opening in the dielectric window, the gas injector including a plurality of gas outlets supplying process gas into the chamber, and an RF energy source such as a planar or non-planar spiral coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The arrangement permits modification of gas delivery arrangements to meet the needs of a particular processing regime. In addition, compared to consumable showerhead arrangements, the use of a removably mounted gas injector can be replaced more easily and economically.

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