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1. 发明授权

US5835334A Variable high temperature chuck for high density plasma chemical vapor deposition 失效
标题翻译：用于高密度等离子体化学气相沉积的可变高温卡盘
公开(公告)号：US5835334A
公开(公告)日：1998-11-10
申请号：US724005
申请日：1996-09-30
申请人： Brian McMillin , Michael Barnes , Butch Berney , Huong Nguyen
发明人： Brian McMillin , Michael Barnes , Butch Berney , Huong Nguyen
IPC分类号： H01L21/68 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck comprises an electrode cap with a dielectric layer for attracting and holding the back side of a semiconductor wafer positioned on the top surface of the dielectric layer, and a lower electrode. The electrostatic chuck is heated by resistive heating elements attached to or embedded within the chuck. The electrostatic chuck is cooled by circulating liquid coolant through the body of the chuck. Coolant gas is provided at the back side of the semiconductor wafer to improve thermal transfer. A feedback control mechanism maintains the chuck, and consequently the wafer, at a predetermined temperature by actively controlling both the heating and the cooling functions.
摘要翻译：静电卡盘包括具有用于吸引并保持位于电介质层的顶表面上的半导体晶片的背面的电介质层的电极帽和下电极。静电卡盘被附着在卡盘内或嵌入卡盘内的电阻加热元件加热。通过将液体冷却剂循环通过卡盘的主体来冷却静电卡盘。冷却剂气体设置在半导体晶片的背面，以改善热转印。反馈控制机构通过主动地控制加热和冷却功能来将卡盘以及因此的晶片维持在预定温度。

2. 发明授权

US06270862B1 Method for high density plasma chemical vapor deposition of dielectric films 有权
标题翻译：介电膜高密度等离子体化学气相沉积方法
公开(公告)号：US06270862B1
公开(公告)日：2001-08-07
申请号：US09359639
申请日：1999-07-26
申请人： Brian McMillin , Huong Nguyen , Michael Barnes , Butch Berney
发明人： Brian McMillin , Huong Nguyen , Michael Barnes , Butch Berney
IPC分类号： H05H124
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45572 , C23C16/45578 , C23C16/507 , C30B25/105 , C30B25/14 , H01J37/321 , H01J37/3244
摘要： A plasma processing system for processes such as chemical vapor deposition includes a plasma processing chamber, a substrate holder for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate holder, the dielectric member forming a wall of the processing chamber a gas supply for supplying gas to the chamber, directed towards the substrate, and an RF energy source such as a planar coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The gas supply may comprise a primary gas ring and a secondary gas ring for supplying gases or gas mixtures into the chamber. The gas supply may further include injectors attached to the primary gas ring which inject gas into the chamber, directed toward the substrate. The plasma processing system may also include a cooling mechanism for cooling the primary gas ring during processing.
摘要翻译：用于诸如化学气相沉积的工艺的等离子体处理系统包括等离子体处理室，用于在处理室内支撑衬底的衬底保持器，具有面向衬底保持器的内表面的电介质构件，形成处理壁的电介质构件将用于向腔室供应气体的气体供给，朝向衬底，以及诸如平面线圈的RF能量源，其将RF能量感应耦合通过电介质构件并进入腔室，以将处理气体激励成等离子体状态。气体供应可以包括用于将气体或气体混合物供应到室中的初级气体环和次级气体环。气体供应还可以包括连接到主气环的喷射器，其将气体注入到腔室中，指向基底。等离子体处理系统还可以包括用于在处理期间冷却主气环的冷却机构。

3. 发明授权

US06184158B2 Inductively coupled plasma CVD 失效
公开(公告)号：US06184158B2
公开(公告)日：2001-02-06
申请号：US08772374
申请日：1996-12-23
申请人： Paul Kevin Shufflebotham , Brian McMillin , Alex Demos , Huong Nguyen , Butch Berney , Monique Ben-Dor
发明人： Paul Kevin Shufflebotham , Brian McMillin , Alex Demos , Huong Nguyen , Butch Berney , Monique Ben-Dor
IPC分类号： H01J3732
CPC分类号： H01J37/321 , C23C16/402 , C23C16/507 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/02301 , H01L21/02315 , H01L21/02362 , H01L21/31612 , H01L21/76837 , Y10S438/902 , Y10S438/906
摘要： A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.

4. 发明授权

US6013155A Gas injection system for plasma processing 失效
标题翻译：用于等离子体处理的气体注入系统
公开(公告)号：US6013155A
公开(公告)日：2000-01-11
申请号：US885353
申请日：1997-06-30
申请人： Brian McMillin , Huong Nguyen , Michael Barnes , Tom Ni
发明人： Brian McMillin , Huong Nguyen , Michael Barnes , Tom Ni
IPC分类号： C23C16/50 , C23C16/44 , C23C16/455 , C23C16/507 , C30B25/10 , C30B25/14 , H01J37/32 , H01L21/205 , H01L21/302 , H05H1/00
CPC分类号： H01J37/3244 , C23C16/455 , C23C16/45565 , C23C16/45572 , C23C16/45578 , C23C16/507 , C30B25/105 , C30B25/14 , H01J37/321
摘要： A plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas supply comprising one or more injector tubes extending rectilinearly in the plasma processing chamber and having one or more orifices in a sidewall for supplying gas into the chamber, and an RF energy source such as a planar coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The gas is supplied through orifices located outside of regions at the distal tip of the injector tubes where electric field lines are concentrated. The arrangement minimizes clogging of the orifices since the orifices are located away from areas where most build-up of process byproducts occur on the injector tube.
摘要翻译：用于诸如半导体晶片的衬底等离子体处理的等离子体处理系统。该系统包括等离子体处理室，用于在处理室内支撑衬底的衬底支撑件，具有面向衬底支撑件的内表面的电介质构件，形成处理室壁的电介质构件，包括一个或多个喷射器管在等离子体处理室中直线延伸并且在侧壁中具有一个或多个孔以将气体供应到室中;以及RF能量源，例如平面线圈，其通过电介质构件将RF能量感应耦合到腔中以激励工艺气体进入等离子体状态。气体通过位于喷射器管的远端的区域外侧的孔提供，其中电场线集中。该装置使得孔口的堵塞最小化，因为孔口远离喷射器管上发生过程副产物的最多的区域。

5. 发明授权

US06626185B2 Method of depositing a silicon containing layer on a semiconductor substrate 有权
标题翻译：在半导体衬底上沉积含硅层的方法
公开(公告)号：US06626185B2
公开(公告)日：2003-09-30
申请号：US09262019
申请日：1999-03-04
申请人： Alex Demos , Paul Kevin Shufflebotham , Michael Barnes , Huong Nguyen , Brian McMillin , Monique Ben-Dor
发明人： Alex Demos , Paul Kevin Shufflebotham , Michael Barnes , Huong Nguyen , Brian McMillin , Monique Ben-Dor
IPC分类号： B08B704
CPC分类号： H01J37/32862 , C23C16/4405 , Y10S438/905
摘要： A plasma cleaning method for removing deposits in a CVD chamber. The method includes introducing a cleaning gas comprising a fluorine-based gas into the chamber. A plasma is formed by exposing the cleaning gas to an inductive field generated by resonating a radio frequency current in a RF antenna coil. A plasma cleaning step is performed by contacting interior surfaces of the chamber with the plasma for a time sufficient to remove the deposits on the interior surfaces. An advantage of the plasma cleaning method is that it allows for in-situ cleaning of the chamber at high rates, thereby effectively reducing equipment downtime. The method has particular applicability in the cleaning of a PECVD process chamber.
摘要翻译：一种用于去除CVD室中的沉积物的等离子体清洁方法。该方法包括将包含氟基气体的清洁气体引入室中。通过将清洁气体暴露于通过使RF天线线圈中的射频电流谐振而产生的感应场而形成等离子体。通过使室的内表面与等离子体接触足以消除内表面上的沉积物的时间来进行等离子体清洗步骤。等离子体清洗方法的一个优点是可以高速率地对腔室进行原位清洗，从而有效地减少设备停机时间。该方法在PECVD处理室的清洁中具有特别的适用性。

6. 发明授权

US06042687A Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing 失效
标题翻译：改善等离子体半导体处理中的蚀刻和沉积均匀性的方法和装置
公开(公告)号：US06042687A
公开(公告)日：2000-03-28
申请号：US885346
申请日：1997-06-30
申请人： Vikram Singh , Brian McMillin , Tom Ni , Michael Barnes , Richard Yang
发明人： Vikram Singh , Brian McMillin , Tom Ni , Michael Barnes , Richard Yang
IPC分类号： H01J37/32 , H05H1/00 , H01L21/00
CPC分类号： H01J37/3244 , H01J37/321
摘要： A plasma processing system and method for processing substrates such as by chemical vapor deposition or etching. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a primary gas supply supplying a primary gas such as process gas into the chamber, a secondary gas supply supplying a secondary gas such as a substantially inert, a substrate passivating or a reactant scavenging gas into the chamber, and an RF energy source such as a planar coil which inductively couples RF energy through the dielectric member and into the chamber to energize the primary gas into a plasma state. The secondary gas is concentrated near the periphery of the substrate, improving etching/deposition uniformity across the substrate surface.
摘要翻译：一种等离子体处理系统和方法，用于通过化学气相沉积或蚀刻来处理衬底。该系统包括等离子体处理室，用于在处理室内支撑衬底的衬底支撑件，具有面向衬底支撑件的内表面的电介质构件，形成处理室壁的电介质构件，将诸如工艺气体的气体引入室中，将诸如基本惰性的二次气体，基底钝化或反应物清除气体的二次气体供给到腔室中，以及RF能量源，例如平面线圈，其感应耦合RF能量通过电介质构件并进入腔室以将主气体激发成等离子体状态。二次气体集中在衬底的周边附近，从而提高衬底表面的蚀刻/沉积均匀性。

7. 发明申请

US20060237252A1 Vehicle ignition interlock systems having transdermal alcohol sensor 有权
标题翻译：具有透皮酒精传感器的车辆点火互锁系统
公开(公告)号：US20060237252A1
公开(公告)日：2006-10-26
申请号：US11113770
申请日：2005-04-25
申请人： Larry Mobley , Brian McMillin , James Lewis
发明人： Larry Mobley , Brian McMillin , James Lewis
IPC分类号： B60K28/00 , B60L1/00 , G08B23/00
CPC分类号： B60K28/063 , B60R25/045 , B60R25/25 , B60R25/252 , B60R25/257 , B60R2325/105 , B60W40/09 , B60W2540/24 , B60W2540/28
摘要： A vehicle ignition interlock system includes a breath analyzer, a transdermal alcohol sensor configured to be worn by the vehicle operator, and a controller operably connected to the breath analyzer, to the transdermal alcohol sensor, and to an ignition system of the vehicle. The transdermal alcohol sensor is configured to be worn by the vehicle operator, and is configured to detect alcohol through the skin of the vehicle operator. The controller is configured to override one or more periodic breath analyzer retests if alcohol is not detected through the skin of the operator by the transdermal alcohol sensor. The controller is configured to increase the frequency of periodic breath analyzer retests of the vehicle operator in response to the transdermal alcohol sensor detecting alcohol through the skin of the operator. A proximity sensor detects proximity of the transdermal alcohol sensor relative to a vehicle operator area.
摘要翻译：车辆点火互锁系统包括呼吸分析仪，构造成由车辆操作者佩戴的透皮酒精传感器，以及可操作地连接到呼吸分析仪，经皮酒精传感器和车辆的点火系统的控制器。透皮酒精传感器构造成由车辆操作者佩戴，并且被配置为通过车辆操作者的皮肤检测酒精。控制器被配置为超过一个或多个周期性呼吸分析器重新测试，如果通过透皮酒精传感器未检测到操作者的皮肤的酒精。控制器被配置为响应于透皮酒精传感器通过操作者的皮肤检测酒精来增加车辆操作者的周期性呼吸分析器重新测试的频率。接近传感器检测透皮酒精传感器相对于车辆操作者区域的接近度。

8. 外观设计

USD540208S1 Sample head for breath analyzer ignition interlock device 有权
标题翻译：呼吸分析仪点火联锁装置样品头
公开(公告)号：USD540208S1
公开(公告)日：2007-04-10
申请号：US29239520
申请日：2005-09-30
申请人： Larry J. Mobley , William Rathbun , Brian McMillin , Michael Purdy , James R. Lewis
设计人： Larry J. Mobley , William Rathbun , Brian McMillin , Michael Purdy , James R. Lewis

9. 发明授权

US07156951B1 Multiple zone gas distribution apparatus for thermal control of semiconductor wafer 有权
标题翻译：用于半导体晶片热控制的多区域气体分配装置
公开(公告)号：US07156951B1
公开(公告)日：2007-01-02
申请号：US10600273
申请日：2003-06-20
申请人： Qinghong K. Gao , Brian McMillin , Bill Denty
发明人： Qinghong K. Gao , Brian McMillin , Bill Denty
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01L21/67109 , H01L21/3065
摘要： A gas distribution apparatus delivers a coolant gas, such as helium, to an upper surface of a chuck for controlling a temperature of a wafer placed on the chuck. The gas distribution apparatus allows first and second zones, such as an inner zone and an outer zone of the chuck, to be supplied with a coolant gas at different pressures for control of the temperature across the wafer. The gas distribution apparatus includes a pressure and flow control system for supplying the coolant gas at selected pressures and bleed lines which provide the dual function of allowing rapid evacuation of the inner and outer zones and preventing excess pressure from one zone from migrating to another zone.
摘要翻译：气体分配装置将诸如氦气的冷却剂气体输送到卡盘的上表面，以控制放置在卡盘上的晶片的温度。气体分配装置允许在不同压力下向第一和第二区域（例如卡盘的内部区域和外部区域）供应冷却剂气体，以控制跨越晶片的温度。气体分配装置包括用于以选定压力供应冷却剂气体的压力和流量控制系统以及排气管线，其提供允许内部和外部区域的快速排空并防止来自一个区域的过度压力迁移到另一个区域的双重功能。

10. 发明申请

US20060238362A1 Vehicle ignition interlock systems that detect the presence of alcohol within vehicles 有权
标题翻译：车辆点火互锁系统，检测车内酒精的存在
公开(公告)号：US20060238362A1
公开(公告)日：2006-10-26
申请号：US11113777
申请日：2005-04-25
申请人： Larry Mobley , Brian McMillin , James Lewis
发明人： Larry Mobley , Brian McMillin , James Lewis
IPC分类号： G08B23/00
CPC分类号： B60K28/063 , Y10S436/90 , Y10T436/204165
摘要： A vehicle ignition interlock system includes a breath analyzer and a controller operably connected to the breath analyzer and to an ignition system of the vehicle. The breath analyzer detects the breath alcohol level of a vehicle operator and is configured to prevent vehicle ignition if a breath alcohol level is greater than or equal to a threshold value. The controller requires the vehicle operator to periodically take breath analyzer “retests” after vehicle ignition in order to allow vehicle operation to continue. The breath analyzer also detects the presence of alcohol within the vehicle, such as alcohol emanating from an open container of alcohol. The controller may override one or more periodic retests if alcohol is not detected within the vehicle over a predetermined period of time. In addition, the controller may increase the frequency of periodic retests of the vehicle operator in response to detecting alcohol within the vehicle.
摘要翻译：车辆点火互锁系统包括呼吸分析器和可操作地连接到呼吸分析器和车辆的点火系统的控制器。呼吸分析仪检测车辆驾驶员的呼吸酒精水平，并且被配置为如果呼吸酒精水平大于或等于阈值则防止车辆点燃。控制器要求车辆操作人员在车辆点火后定期进行呼吸分析仪“重新测试”，以使车辆操作能够继续。呼吸分析仪还检测车内酒精的存在，例如从开放的酒精容器中发出的酒精。如果在预定时间段内没有在车辆内检测到酒精，则控制器可以覆盖一个或多个周期性重新测试。此外，控制器可以响应于检测车辆内的酒精而增加车辆操作者的周期性重新测试的频率。

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