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1. 发明授权

US06692649B2 Inductively coupled plasma downstream strip module 有权
公开(公告)号：US06692649B2
公开(公告)日：2004-02-17
申请号：US09765920
申请日：2001-01-18
申请人： Wenli Z. Collison , Michael S. Barnes , Tuqiang O. Ni , Butch Berney , Wayne W. Vereb , Brian K. McMillin
发明人： Wenli Z. Collison , Michael S. Barnes , Tuqiang O. Ni , Butch Berney , Wayne W. Vereb , Brian K. McMillin
IPC分类号： H01L2100
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/32357 , H01J37/3244
摘要： A plasma processing module for processing a substrate includes a plasma containment chamber having a feed gas inlet port capable of allowing a feed gas to enter the plasma containment chamber of the plasma processing module during the processing of the substrate. An inductively coupled source is used to energize the feed gas and striking a plasma within the plasma containment chamber. The specific configuration of the inductively coupled source causes the plasma to be formed such that the plasma includes a primary dissociation zone within the plasma containment chamber. A secondary chamber is separated from the plasma containment chamber by a plasma containment plate. The secondary chamber includes a chuck and an exhaust port. The chuck is configured to support the substrate during the processing of the substrate and the exhaust port is connected to the secondary chamber such that the exhaust port allows gases to be removed from the secondary chamber during the processing of the substrate. A chamber interconnecting port interconnects the plasma containment chamber and the secondary chamber. The chamber interconnecting port allows gases from the plasma containment chamber to flow into the secondary chamber during the processing of the substrate. The chamber interconnecting port is positioned between the plasma containment chamber and the secondary chamber such that, when the substrate is positioned on the chuck in the secondary chamber, there is no substantial direct line-of-sight exposure of the substrate to the primary dissociation zone of the plasma formed within the plasma containment chamber.

2. 发明授权

US06203657B1 Inductively coupled plasma downstream strip module 失效
标题翻译：电感耦合等离子体下游带模块
公开(公告)号：US06203657B1
公开(公告)日：2001-03-20
申请号：US09052906
申请日：1998-03-31
申请人： Wenli Z. Collison , Michael S. Barnes , Tuqiang Q. Ni , Butch Berney , Wayne W. Vereb , Brian K. McMillin
发明人： Wenli Z. Collison , Michael S. Barnes , Tuqiang Q. Ni , Butch Berney , Wayne W. Vereb , Brian K. McMillin
IPC分类号： C23F102
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/32357 , H01J37/3244
摘要： A plasma processing module for processing a substrate includes a plasma containment chamber having a feed gas inlet port capable of allowing a feed gas to enter the plasma containment chamber of the plasma processing module during the processing of the substrate. An inductively coupled source is used to energize the feed gas and striking a plasma within the plasma containment chamber. The specific configuration of the inductively coupled source causes the plasma to be formed such that the plasma includes a primary dissociation zone within the plasma containment chamber. A secondary chamber is separated from the plasma containment chamber by a plasma containment plate. The secondary chamber includes a chuck and an exhaust port. The chuck is configured to support the substrate during the processing of the substrate and the exhaust port is connected to the secondary chamber such that the exhaust port allows gases to be removed from the secondary chamber during the processing of the substrate. A chamber interconnecting port interconnects the plasma containment chamber and the secondary chamber. The chamber interconnecting port allows gases from the plasma containment chamber to flow into the secondary chamber during the processing of the substrate. The chamber interconnecting port is positioned between the plasma containment chamber and the secondary chamber such that, when the substrate is positioned on the chuck in the secondary chamber, there is no substantial direct line-of-sight exposure of the substrate to the primary dissociation zone of the plasma formed within the plasma containment chamber.
摘要翻译：用于处理衬底的等离子体处理模块包括等离子体容纳室，其具有能够在衬底处理期间允许进料气体进入等离子体处理模块的等离子体容纳室的进料气体入口。电感耦合源用于对进料气体进行激励并且在等离子体容纳室内打入等离子体。电感耦合源的特定配置导致形成等离子体，使得等离子体包括等离子体容纳室内的主离解区。二级室通过等离子体容纳板与等离子体容纳室分离。次级室包括卡盘和排气口。卡盘被配置为在基板的处理期间支撑基板，并且排气口连接到副室，使得排气口允许在基板的处理期间从第二室中除去气体。室互连端口将等离子体容纳室和次室互连。腔室互连端口允许来自等离子体容纳室的气体在衬底的处理期间流入次室。腔室互连端口位于等离子体容纳室和次级室之间，使得当衬底定位在次级室中的卡盘上时，基底没有相当大的直接视线暴露于初级解离区的等离子体容纳室内形成的等离子体。

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