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1. 发明授权

US07086347B2 Apparatus and methods for minimizing arcing in a plasma processing chamber 有权
公开(公告)号：US07086347B2
公开(公告)日：2006-08-08
申请号：US10140618
申请日：2002-05-06
申请人： Arthur M. Howald , Andras Kuthi , Andrew D. Bailey, III , Butch Berney
发明人： Arthur M. Howald , Andras Kuthi , Andrew D. Bailey, III , Butch Berney
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01J37/32477 , H01J37/32623
摘要： A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward a plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.

2. 发明授权

US07611640B1 Minimizing arcing in a plasma processing chamber 有权
标题翻译：最小化等离子体处理室中的电弧
公开(公告)号：US07611640B1
公开(公告)日：2009-11-03
申请号：US11396124
申请日：2006-03-30
申请人： Arthur M Howald , Andras Kuthi , Andrew D. Bailey, III , Butch Berney
发明人： Arthur M Howald , Andras Kuthi , Andrew D. Bailey, III , Butch Berney
IPC分类号： C23F1/00 , H01L21/3065
CPC分类号： H01J37/32477 , H01J37/32623
摘要： A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward a plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.
摘要翻译：公开了一种用于处理基板以在其上形成电子部件的等离子体处理室。等离子体处理室包括在基板处理期间具有朝向等离子体处理室中的等离子体的表面等离子体表面的等离子体面向部件，等离子体面向部件与接地端子电隔离。等离子体处理室还包括耦合到等离子体面向部件的接地装置，接地装置包括设置在等离子体面向部件和接地端子之间的第一电流路径中的第一电阻电路。接地装置还包括设置在等离子体面向部件和接地端子之间的至少一个其它电流通路中的RF滤波器装置，其中选择第一电阻电路的电阻值以基本上消除等离子体和等离子体 - 在处理基板期间面对部件。

3. 发明授权

US06842147B2 Method and apparatus for producing uniform processing rates 有权
标题翻译：制造均匀加工率的方法和装置
公开(公告)号：US06842147B2
公开(公告)日：2005-01-11
申请号：US10200833
申请日：2002-07-22
申请人： Arthur M. Howald , Andras Kuthi , Mark Henry Wilcoxson , Andrew D. Bailey, III
发明人： Arthur M. Howald , Andras Kuthi , Mark Henry Wilcoxson , Andrew D. Bailey, III
IPC分类号： H05H1/46 , H01J37/32 , H01L21/3065 , H01Q1/26 , H01Q7/00 , H01Q11/12 , H01Q21/29
CPC分类号： H01J37/321 , H01J37/3299 , H01Q7/00 , H01Q21/29 , H05H1/46
摘要： An antenna arrangement for generating an rf field distribution at a plasma generating region inside a chamber wall of a process chamber of a plasma processing apparatus is described. The antenna arrangement includes an rf inductive antenna to which an rf power supply can be connected to supply an rf current to generate a first rf field extending into the plasma generating region. A passive antenna is also provided which is inductively coupled to the rf inductive antenna and configured to generate a second rf field modifying the first rf field. The rf field distribution at the plasma generating region increases the processing uniformity of the processing apparatus compared to that in the absence of the passive antenna.
摘要翻译：描述了一种用于在等离子体处理装置的处理室的室壁内的等离子体产生区域处产生射频场分布的天线装置。天线装置包括一个rf感应天线，rf电源可以连接到rf电源，以提供rf电流以产生延伸到等离子体产生区域中的第一rf场。还提供无源天线，其被感应耦合到rf感应天线并且被配置为生成修改第一rf场的第二rf场。与没有无源天线的情况相比，等离子体产生区域的射频场分布增加了处理装置的处理均匀性。

4. 发明授权

US06838832B1 Apparatus and methods for improving the stability of RF power delivery to a plasma load 有权
标题翻译：用于提高RF功率输送到等离子体负载的稳定性的装置和方法
公开(公告)号：US06838832B1
公开(公告)日：2005-01-04
申请号：US10259160
申请日：2002-09-26
申请人： Arthur M. Howald , Andras Kuthi , Andrew D. Bailey, III
发明人： Arthur M. Howald , Andras Kuthi , Andrew D. Bailey, III
IPC分类号： H01J37/32 , H03H7/40 , H01J7/24 , H01P5/12
CPC分类号： H03H7/40 , H01J37/32082 , H01J37/32183
摘要： Methods for improving the stability of RF power delivery to a plasma load are disclosed. The method includes adding an RF resistor and/or a power attenuator at one of many specific locations in the RF power system to lower the impedance derivatives while keeping the matching circuit substantially in tune with the RF transmission line.
摘要翻译：公开了用于提高RF功率输送到等离子体载荷的稳定性的方法。该方法包括在RF功率系统中的许多特定位置之一处添加RF电阻器和/或功率衰减器，以降低阻抗导数，同时保持匹配电路与RF传输线基本一致。

5. 发明授权

US07480571B2 Apparatus and methods for improving the stability of RF power delivery to a plasma load 有权
标题翻译：用于提高RF功率输送到等离子体负载的稳定性的装置和方法
公开(公告)号：US07480571B2
公开(公告)日：2009-01-20
申请号：US10966549
申请日：2004-10-15
申请人： Arthur M. Howald , Andras Kuthi , Andrew D. Bailey, III
发明人： Arthur M. Howald , Andras Kuthi , Andrew D. Bailey, III
IPC分类号： C23F1001/00
CPC分类号： H01J37/32082 , H01J37/32183 , H01J37/3299 , H03H7/40 , H05H1/46
摘要： Methods for improving the stability of RF power delivery to a plasma load are disclosed. The method includes adding an RF resistor and/or a power attenuator at one of many specific locations in the RF power system to lower the impedance derivatives while keeping the matching circuit substantially in tune with the RF transmission line.
摘要翻译：公开了用于提高RF功率输送到等离子体负载的稳定性的方法。该方法包括在RF功率系统中的许多特定位置之一处添加RF电阻器和/或功率衰减器，以降低阻抗导数，同时保持匹配电路与RF传输线基本一致。

6. 发明授权

US06341574B1 Plasma processing systems 有权
标题翻译：等离子体处理系统
公开(公告)号：US06341574B1
公开(公告)日：2002-01-29
申请号：US09439661
申请日：1999-11-15
申请人： Andrew D. Bailey, III , Alan M. Schoepp , David J. Hemker , Mark H. Wilcoxson , Andras Kuthi
发明人： Andrew D. Bailey, III , Alan M. Schoepp , David J. Hemker , Mark H. Wilcoxson , Andras Kuthi
IPC分类号： C23C1600
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A plasma processing system for processing a substrate which includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing system includes a coupling window disposed at an upper end of the plasma processing chamber and an RF antenna arrangement disposed above a plane defined by the substrate when the substrate is disposed within the plasma processing chamber for the processing. The plasma processing system also includes an electromagnet arrangement disposed above the plane defined by the substrate. The electromagnet arrangement is configured so as to result in a radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the coupling window and antenna when at least one direct current is supplied to the electromagnet arrangement. The radial variation is effective to affect processing uniformity across the substrate. The plasma processing system additionally includes a dc power supply coupled to the electromagnet arrangement. The dc power supply has a controller to vary a magnitude of at least one direct current, thereby changing the radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the antenna to improve the processing uniformity across the substrate.
摘要翻译：一种用于处理衬底的等离子体处理系统，其包括单室，基本方位对称的等离子体处理室，其中等离子体都被点燃并持续进行处理。等离子体处理室没有单独的等离子体产生室。等离子体处理室具有上端和下端。等离子体处理系统包括设置在等离子体处理室的上端的耦合窗口和当衬底设置在等离子体处理室内用于处理时设置在由衬底限定的平面上方的RF天线布置。等离子体处理系统还包括设置在由衬底限定的平面之上的电磁体装置。当至少一个直流电被提供给电磁体装置时，电磁体装置构造成导致等离子体处理室内的可耦合窗口和天线附近的区域内的可控磁场的径向变化。径向变化对影响衬底上的加工均匀性是有效的。等离子体处理系统还包括耦合到电磁体装置的直流电源。直流电源具有控制器来改变至少一个直流电流的大小，从而改变等离子体处理室内靠近天线的可控磁场中的径向变化，以改善穿过衬底的加工均匀性。

7. 发明授权

US06320320B1 Method and apparatus for producing uniform process rates 有权
标题翻译：用于产生均匀加工速率的方法和装置
公开(公告)号：US06320320B1
公开(公告)日：2001-11-20
申请号：US09440418
申请日：1999-11-15
申请人： Andrew D. Bailey, III , Alan M. Schoepp , Andras Kuthi
发明人： Andrew D. Bailey, III , Alan M. Schoepp , Andras Kuthi
IPC分类号： H01J724
CPC分类号： H01J37/32467 , H01J37/321
摘要： A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber. The apparatus also includes a coupling window disposed between the antenna and the process chamber. The coupling window being configured to allow the passage of the first RF energy from the antenna to the interior of the process chamber. The coupling window having a first layer and a second layer. The second layer being configured to substantially suppress the capacitive coupling formed between the substantially circular antenna and the plasma. The substantially circular antenna and the coupling window working together to produce a substantially uniform process rate across the surface of the substrate.
摘要翻译：公开了一种用等离子体处理衬底的等离子体处理装置。该装置包括具有第一RF频率的第一RF电源和处理室。此外，该设备包括可操作地耦合到第一RF电源并且当基板设置在处理室内以进行处理时设置在由基板限定的平面之上的基本圆形的天线。基本上圆形的天线被配置为利用由第一RF电源产生的第一RF能量来诱导处理室内的电场。基本上圆形的天线包括第一平面中的至少第一对同心环和在第二平面中的第二对同心环。第一对同心环和第二对同心环彼此基本相同和对称地对准。大致圆形天线在处理室内形成方位对称等离子体。该装置还包括设置在天线和处理室之间的耦合窗口。耦合窗口被配置为允许第一RF能量从天线通过到处理室的内部。耦合窗具有第一层和第二层。第二层被配置为基本上抑制形成在基本上圆形的天线和等离子体之间的电容耦合。基本上圆形的天线和耦合窗口一起工作，以在衬底的表面上产生基本均匀的工艺速率。

8. 发明授权

US09184043B2 Edge electrodes with dielectric covers 有权
标题翻译：带电介质盖的边缘电极
公开(公告)号：US09184043B2
公开(公告)日：2015-11-10
申请号：US11758584
申请日：2007-06-05
申请人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi , Yunsang Kim
发明人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi , Yunsang Kim
IPC分类号： H01J37/32 , H01L21/00 , H01L21/311 , H01L21/3213 , H01L21/02
CPC分类号： H01L21/02087 , H01J37/32009 , H01J37/32082 , H01J37/32559 , H01J37/32642 , H01J37/32862 , H01L21/02057 , H01L21/31116 , H01L21/31138 , H01L21/32136
摘要： The embodiments provide apparatus and methods for removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a substrate support configured to receive the substrate. The plasma processing chamber also includes a bottom edge electrode surrounding the substrate support. The bottom edge electrode and the substrate support are electrically isolated from one another by a bottom dielectric ring. A surface of the bottom edge electrode facing the substrate is covered by a bottom thin dielectric layer. The plasma processing chamber further includes a top edge electrode surrounding a top insulator plate opposing the substrate support. The top edge electrode is electrically grounded. A surface of the top edge electrode facing the substrate is covered by a top thin dielectric layer. The top edge electrode and the bottom edge electrode oppose one another and are configured to generate a cleaning plasma to clean the bevel edge of the substrate.
摘要翻译：这些实施例提供用于去除蚀刻副产物，电介质膜和金属膜附近的衬底斜面边缘的设备和方法，以及室内，以避免聚合物副产物和沉积膜的堆积并提高工艺产率。在示例性实施例中，提供了构造成清洁基板的斜边缘的等离子体处理室。等离子体处理室包括被配置为接收衬底的衬底支撑件。等离子体处理室还包括围绕衬底支撑件的底部边缘电极。底部边缘电极和基底支撑件通过底部介电环彼此电隔离。面向基板的底部边缘电极的表面被底部薄的电介质层覆盖。等离子体处理室还包括围绕与衬底支撑件相对的顶部绝缘体板的顶部边缘电极。顶边电极电接地。面向衬底的顶边电极的表面被顶部薄介电层覆盖。顶边电极和下边缘电极彼此相对并且被配置为产生清洁等离子体以清洁衬底的斜边缘。

9. 发明授权

US07858898B2 Bevel etcher with gap control 有权
标题翻译：斜角蚀刻机具有间隙控制
公开(公告)号：US07858898B2
公开(公告)日：2010-12-28
申请号：US11698191
申请日：2007-01-26
申请人： Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , Andras Kuthi , Yunsang Kim , William S. Kennedy
发明人： Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , Andras Kuthi , Yunsang Kim , William S. Kennedy
IPC分类号： B23K10/00
CPC分类号： H01L21/0209 , H01J37/32366 , H01J37/32568 , H01J2237/335 , H01L21/67069
摘要： A device for cleaning a bevel edge of a semiconductor substrate. The device includes a lower electrode assembly that has a top surface and is adapted to support the substrate and an upper electrode assembly that has a bottom surface opposing the top surface. The lower and upper electrode assemblies generate plasma for cleaning the bevel edge of the substrate disposed between the top and bottom surfaces during operation. The device also includes a mechanism for suspending the upper electrode assembly over the lower support and adjusting the tilt angle and horizontal translation of the bottom surface relative to the top surface.
摘要翻译：一种用于清洁半导体衬底的斜边缘的装置。该装置包括具有顶表面并适于支撑基底的下电极组件和具有与顶表面相对的底表面的上电极组件。下部和上部电极组件在操作期间产生用于清洁设置在顶部和底部表面之间的衬底的斜面边缘的等离子体。该装置还包括用于将上电极组件悬挂在下支撑件上并且调节底表面相对于顶表面的倾斜角度和水平平移的机构。

10. 发明授权

US08252140B2 Plasma chamber for wafer bevel edge processing 有权
标题翻译：等离子室用于晶圆斜面加工
公开(公告)号：US08252140B2
公开(公告)日：2012-08-28
申请号：US13084849
申请日：2011-04-12
申请人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi
发明人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/02087 , B08B7/0035 , H01J37/32091 , H01J37/32174 , H01J37/32541 , H01L21/67069
摘要： The embodiments provide structures and mechanisms for removal of etch byproducts, dielectric films and metal films on and near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In one example, a chamber for wafer bevel edge cleaning is provided. The chamber includes a bottom electrode having a bottom electrode surface for supporting the wafer when present. Also included is a top edge electrode surrounding an insulating plate. The insulator plate is opposing the bottom electrode. The top edge electrode is electrically grounded and has a down-facing L shape. Further included in the chamber is a bottom edge electrode that is electrically grounded and spaced apart from the bottom electrode. The bottom edge electrode is disposed to encircle the bottom electrode. The bottom edge electrode is oriented to oppose the down-facing L shape of the top edge electrode.
摘要翻译：这些实施例提供用于去除基板斜边缘上和附近的蚀刻副产物，电介质膜和金属膜的结构和机构，以及室内，以避免聚合物副产物和沉积膜的积聚并提高工艺产率。在一个示例中，提供了用于晶片斜面边缘清洁的室。该室包括底部电极，其具有用于在存在时支撑晶片的底部电极表面。还包括围绕绝缘板的顶边电极。绝缘板与底部电极相对。顶边电极电接地并具有向下的L形状。还包括在腔室中的底边电极是电接地的并且与底部电极间隔开。下边缘电极被设置成环绕底部电极。底部边缘电极被定向成与顶部边缘电极的向下的L形相对。

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