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1. 发明授权

US07295588B2 Semiconductor laser element, method of fabrication thereof, and multi-wavelength monolithic semiconductor laser device 失效
标题翻译：半导体激光元件及其制造方法以及多波长单片半导体激光器件
公开(公告)号：US07295588B2
公开(公告)日：2007-11-13
申请号：US10724570
申请日：2003-11-26
申请人： Akira Tanaka , Hideo Shiozawa , Minoru Watanabe , Koichi Gen-Ei , Hirokazu Tanaka
发明人： Akira Tanaka , Hideo Shiozawa , Minoru Watanabe , Koichi Gen-Ei , Hirokazu Tanaka
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0658 , H01S5/2206 , H01S5/2231 , H01S5/34326 , H01S5/3436 , H01S5/4031 , H01S5/4087
摘要： The present invention provides a semiconductor laser element, a method of fabrication thereof, and a multi-wavelength monolithic semiconductor laser device that achieve self-sustained pulsation up to a high output level and achieve self-sustained pulsation over a wide output range. A semiconductor laser element that exhibits self-sustained pulsation in a predetermined output region, said semiconductor laser element comprising: a substrate; a first conductive type clad layer formed on said substrate; an active layer formed on said first conductive type clad layer for emitting light by current injection; a second conductive type first clad layer formed on said active layer; and a stripe-shaped second conductive type second clad layer formed on said second conductive type first clad layer in a first direction, in such a manner that the cross-sectional surface of said stripe-shaped second conductive type second clad layer in a direction perpendicular to said first direction has a shape having an upper edge and a lower edge that face each other and side edges that connect between said upper edge and said lower edge, where the minimum width thereof is at least 70% but no more than 100% of the maximum width.
摘要翻译：本发明提供一种半导体激光元件及其制造方法，以及多波长单片半导体激光器件，其能够在高输出电平下实现自持脉动，并在宽输出范围内实现自持脉动。一种半导体激光元件，其在预定的输出区域中呈现自持脉动，所述半导体激光元件包括：基板; 形成在所述基板上的第一导电型覆盖层; 形成在所述第一导电型覆盖层上用于通过电流注入发光的有源层; 形成在所述有源层上的第二导电类型的第一覆盖层; 以及在第一方向上形成在所述第二导电型第一覆盖层上的条形第二导电型第二覆盖层，使得所述条形第二导电型第二覆层在垂直方向上的横截面所述第一方向具有彼此面对的上边缘和下边缘以及连接在所述上边缘和所述下边缘之间的侧边缘的形状，其中最小宽度为至少70％但不大于100％最大宽度。

2. 发明申请

US20050030997A1 Semiconductor laser device and its manufacturing method 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20050030997A1
公开(公告)日：2005-02-10
申请号：US10845666
申请日：2004-05-13
申请人： Akira Tanaka , Yoshiyuki Itoh , Osamu Horiuchi , Akio Makuta , Koichi Gen-Ei , Hideo Shiozawa
发明人： Akira Tanaka , Yoshiyuki Itoh , Osamu Horiuchi , Akio Makuta , Koichi Gen-Ei , Hideo Shiozawa
IPC分类号： G11B7/125 , H01S5/00 , H01S5/02 , H01S5/042 , H01S5/06 , H01S5/065 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/343 , H01S5/40
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/0601 , H01S5/0654 , H01S5/0658 , H01S5/2022 , H01S5/2081 , H01S5/209 , H01S5/2206 , H01S5/2231 , H01S5/3202 , H01S5/34326 , H01S5/3436 , H01S5/4031 , H01S5/4087
摘要： A semiconductor laser device comprises: a cladding layer of a first conductivity type; an active layer provided on the cladding layer; and a cladding layer of a second conductivity type provided on the active layer. At least a part of the cladding layer of the second conductivity type has a ridge stripe. The ridge stripe includes: an upper part having substantially vertical sidewalls; and a lower portion having sidewalls inclined so that the stripe becomes wider toward the active layer.
摘要翻译：半导体激光器件包括：第一导电类型的覆层; 设置在包层上的有源层; 以及设置在有源层上的第二导电类型的覆层。第二导电类型的包覆层的至少一部分具有脊条。脊条包括：具有基本垂直侧壁的上部; 以及具有侧壁倾斜使得条纹朝向有源层变宽的下部。

3. 发明授权

US06618420B1 Monolithic multi-wavelength semiconductor laser unit 有权
标题翻译：单片多波长半导体激光器单元
公开(公告)号：US06618420B1
公开(公告)日：2003-09-09
申请号：US09639018
申请日：2000-08-15
申请人： Koichi Gen-Ei , Hideo Shiozawa , Akira Tanaka
发明人： Koichi Gen-Ei , Hideo Shiozawa , Akira Tanaka
IPC分类号： H01S500
CPC分类号： H01S5/4031 , H01S5/4087
摘要： This is a double wavelength semiconductor laser unit having a first laser emitting a light of a first wavelength and a second laser emitting a light of a second wavelength different from the first wavelength. The first and second lasers are merged on a substrate. The first laser has a bulk active layer whose film thickness is 0.01 &mgr;m or more and 0.1 &mgr;m or less. And the second laser has an MQW active layer constituted by stacked structure composed of a quantum well layer and a barrier layer. By employing the bulk active layer for the first laser, it is possible to reduce the band gap discontinuity induced at a boundary between a cladding layer and the bulk active layer, and then decreases an operational voltage, and further improve the reliability of the first laser.
摘要翻译：这是具有发射第一波长的光的第一激光器和发射不同于第一波长的第二波长的光的第二激光器的双波长半导体激光器单元。第一和第二激光器合并在基板上。第一激光器具有膜厚度为0.01μm以上且0.1μm以下的本体活性层。并且第二激光器具有由量子阱层和阻挡层构成的层叠结构构成的MQW有源层。通过采用第一激光器的体积有源层，可以减少在包层和主体有源层之间的边界处引起的带隙不连续性，然后降低工作电压，进一步提高第一激光器的可靠性。

4. 发明授权

US07221692B2 Semiconductor laser device and its manufacturing method 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07221692B2
公开(公告)日：2007-05-22
申请号：US10845666
申请日：2004-05-13
申请人： Akira Tanaka , Yoshiyuki Itoh , Osamu Horiuchi , Akio Makuta , Koichi Gen-Ei , Hideo Shiozawa
发明人： Akira Tanaka , Yoshiyuki Itoh , Osamu Horiuchi , Akio Makuta , Koichi Gen-Ei , Hideo Shiozawa
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/0601 , H01S5/0654 , H01S5/0658 , H01S5/2022 , H01S5/2081 , H01S5/209 , H01S5/2206 , H01S5/2231 , H01S5/3202 , H01S5/34326 , H01S5/3436 , H01S5/4031 , H01S5/4087
摘要： A semiconductor laser device comprises: a cladding layer of a first conductivity type; an active layer provided on the cladding layer; and a cladding layer of a second conductivity type provided on the active layer. At least a part of the cladding layer of the second conductivity type has a ridge stripe. The ridge stripe includes: an upper part having substantially vertical sidewalls; and a lower portion having sidewalls inclined so that the stripe becomes wider toward the active layer.
摘要翻译：半导体激光器件包括：第一导电类型的覆层; 设置在包层上的有源层; 以及设置在有源层上的第二导电类型的覆层。第二导电类型的包覆层的至少一部分具有脊条。脊条包括：具有基本垂直侧壁的上部; 以及具有侧壁倾斜使得条纹朝向有源层变宽的下部。

5. 发明授权

US5036521A Semiconductor laser device 失效
公开(公告)号：US5036521A
公开(公告)日：1991-07-30
申请号：US439428
申请日：1989-11-21
申请人： Genichi Hatakoshi , Kazuhiko Itaya , Shigeya Naritsuka , Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Yukio Watanabe , Yasuo Ohba , Yoshihiro Kokubun , Yutaka Uematsu
发明人： Genichi Hatakoshi , Kazuhiko Itaya , Shigeya Naritsuka , Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Yukio Watanabe , Yasuo Ohba , Yoshihiro Kokubun , Yutaka Uematsu
IPC分类号： H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/32325 , H01S5/2004 , H01S5/2231 , H01S5/3211
摘要： In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities:0.015.DELTA..sup.1/2

6. 发明授权

US4987096A Manufacturing method of semiconductor laser with non-absorbing mirror structure 失效
标题翻译：具有非吸收镜结构的半导体激光器的制造方法
公开(公告)号：US4987096A
公开(公告)日：1991-01-22
申请号：US450063
申请日：1989-12-13
申请人： Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Kazuhiko Itaya , Yukio Watanabe , Mariko Suzuki , Genichi Hatakoshi
发明人： Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Kazuhiko Itaya , Yukio Watanabe , Mariko Suzuki , Genichi Hatakoshi
IPC分类号： H01S5/00 , H01S5/042 , H01S5/16 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/162 , H01S5/168 , H01S5/2231 , H01S5/3206 , H01S5/32325 , Y10S148/025 , Y10S148/095
摘要： An InGaAlP NAM structure laser is formed with a double-heterostructure section disposed on an n-type GaAs substrate. The double-heterostructure section includes a first cladding layer of n-type InGaAlP, a non-doped InGaP active layer, and a second cladding layer of p-type InGaAlP. An n-type GaAs current-blocking layer having a stripe opening and a p-type GaAs contact layer are sequentially formed on the second cladding layer by MOCVD crystal growth. A low-energy band gap region is defined in a central region of the active layer located immediately below the stripe opening. A high-energy band gap region is defined in a peripheral region of the active layer corresponding to a light output end portion of the laser and located immediately below the current-blocking layer. Therefore, self absorption of an oscillated laser beam at the output end portion can be reduced or prevented.

7. 发明授权

US4893313A Semiconductor laser device which has a double-hetero structure having an optimal layer thickness 失效
标题翻译：具有最佳层厚度的双异质结构的半导体激光器件
公开(公告)号：US4893313A
公开(公告)日：1990-01-09
申请号：US323400
申请日：1989-03-14
申请人： Genichi Hatakoshi , Kazuhiko Itaya , Shigeya Naritsuka , Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Yukio Watanabe , Yasuo Ohba , Yoshihiro Kokubun , Yutaka Uematsu
发明人： Genichi Hatakoshi , Kazuhiko Itaya , Shigeya Naritsuka , Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Yukio Watanabe , Yasuo Ohba , Yoshihiro Kokubun , Yutaka Uematsu
IPC分类号： H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/32325 , H01S5/2004 , H01S5/2231 , H01S5/3211
摘要： In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities:0.015.DELTA..sup.1/2

8. 发明授权

US06646975B1 Semiconductor laser array and its manufacturing method, optical integrated unit and optical pickup 失效
标题翻译：半导体激光阵列及其制造方法，光学集成单元和光学拾取器
公开(公告)号：US06646975B1
公开(公告)日：2003-11-11
申请号：US09340349
申请日：1999-06-25
申请人： Ichiro Uchizaki , Kazushige Mori , Hideo Shiozawa
发明人： Ichiro Uchizaki , Kazushige Mori , Hideo Shiozawa
IPC分类号： G11B7125
CPC分类号： G11B7/131 , B82Y20/00 , G11B7/123 , G11B7/1275 , G11B7/1353 , G11B2007/0006 , H01L2224/16145 , H01S5/02216 , H01S5/0224 , H01S5/02292 , H01S5/0683 , H01S5/2205 , H01S5/222 , H01S5/2231 , H01S5/34313 , H01S5/34326 , H01S5/4031 , H01S5/4043 , H01S5/4087 , H01S2302/00
摘要： A semiconductor laser array including a plurality of index-guided semiconductor lasers different in oscillation wavelength is made by collectively controlling their double transverse modes and collectively processing them to form their current-blocking structures and buried layers. Thus, a semiconductor laser having a flat element surface and excellent in heat radiation can be made in a reduced number of manufacturing steps. When the laser array of this multi-wavelength type and a detector PD are mounted with a predetermined positional relationship, return light from an optical disk can be converted into a single point to enable detection thereof at PD on one chip. Therefore, an optical disk driving apparatus remarkably reduced in size and weight and having a high reliability can be realized.
摘要翻译：通过集体控制它们的双横模并共同处理它们以形成其阻流结构和掩埋层，制成包括多个不同振荡波长的折射率半导体激光器的半导体激光器阵列。因此，可以减少数量的制造步骤，制造具有平坦元件表面和散热性优异的半导体激光器。当以这种多波长类型的激光器阵列和检测器PD以预定的位置关系安装时，来自光盘的返回光可以转换成单个点，以使其能够在一个芯片上在PD处进行检测。因此，可以实现显着地减小尺寸和重量并且具有高可靠性的光盘驱动装置。

9. 发明授权

US6165243A Anti-mold and anti-bacteria air filter 有权
公开(公告)号：US6165243A
公开(公告)日：2000-12-26
申请号：US336979
申请日：1999-06-21
申请人： Ei Kawaguchi , Hideo Shiozawa
发明人： Ei Kawaguchi , Hideo Shiozawa
IPC分类号： B01D39/14 , B01D39/08 , D03D15/00 , B32B1/00
CPC分类号： B01D39/083 , B01D2239/0208 , B01D2239/0216 , B01D2239/04 , B01D2239/0442 , B01D2239/0457 , B01D2239/0609 , B01D2239/0613 , B01D2239/1291 , D03D15/00 , D03D15/0027 , D03D19/00 , D10B2321/022 , D10B2401/041 , D10B2401/061 , D10B2401/063 , D10B2401/13 , D10B2505/04 , Y10S55/45
摘要： The present invention provides an air filter that is excellent in anti-molding and anti-bacterial functions. The anti-mold and anti-bacteria air filter is formed from fabric knitted and woven with a warp and/or a weft made of filiform thermoplastic resin including the organic anti-molding agent and filiform thermoplastic resin including the inorganic anti-bacterial agent. It is also possible to form multi-woven fabric knitted and woven with a warp made of filiform thermoplastic resin including the organic anti-molding agent and the filiform thermoplastic resin including the inorganic anti-bacterial agent.

10. 发明授权

US5034957A Semiconductor laser device 失效
公开(公告)号：US5034957A
公开(公告)日：1991-07-23
申请号：US307278
申请日：1989-02-07
申请人： Yasuo Ohba , Yukie Nishikawa , Hajime Okuda , Masayuki Ishikawa , Hideto Sugawara , Hideo Shiozawa , Yoshihiro Kokubun
发明人： Yasuo Ohba , Yukie Nishikawa , Hajime Okuda , Masayuki Ishikawa , Hideto Sugawara , Hideo Shiozawa , Yoshihiro Kokubun
IPC分类号： H01L33/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/30 , H01S5/323
CPC分类号： H01S5/20 , H01L33/0062 , H01S5/305 , H01S5/32325 , H01S5/2059 , H01S5/2206 , H01S5/2231 , H01S5/3054
摘要： A semiconductor laser device using double heterostructure comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1), capable of preventing the leakage of the carriers and thereby reducing the threshold current, being operative with small threshold current density and at high temperature, and having a long lifetime. The device may include a double heterostructure formed on the GaAs substrate, comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) including an active layer, the active layer having an impurity concentration not greater than 5.times.10.sup.16 cm.sup.-3. The device may include a double heterostructure formed on the GaAs substrate, comprised of InGaP active layer and p-type In.sub.q (Ga.sub.1-z Al.sub.z).sub.q P (0.ltoreq.q.ltoreq.1, 0.ltoreq.z.ltoreq.1) cladding layer with a value of z between 0.65 and 0.75. The device may include a double heterostructure formed on the GaAs substrate, comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) including an n-type cladding layer and an p-type cladding layer, one of the n-type cladding layer and the p-type cladding layer being Si-doped. A method of manufacturing the device is also disclosed.

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