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1. 发明授权

US07221692B2 Semiconductor laser device and its manufacturing method 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07221692B2
公开(公告)日：2007-05-22
申请号：US10845666
申请日：2004-05-13
申请人： Akira Tanaka , Yoshiyuki Itoh , Osamu Horiuchi , Akio Makuta , Koichi Gen-Ei , Hideo Shiozawa
发明人： Akira Tanaka , Yoshiyuki Itoh , Osamu Horiuchi , Akio Makuta , Koichi Gen-Ei , Hideo Shiozawa
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/0601 , H01S5/0654 , H01S5/0658 , H01S5/2022 , H01S5/2081 , H01S5/209 , H01S5/2206 , H01S5/2231 , H01S5/3202 , H01S5/34326 , H01S5/3436 , H01S5/4031 , H01S5/4087
摘要： A semiconductor laser device comprises: a cladding layer of a first conductivity type; an active layer provided on the cladding layer; and a cladding layer of a second conductivity type provided on the active layer. At least a part of the cladding layer of the second conductivity type has a ridge stripe. The ridge stripe includes: an upper part having substantially vertical sidewalls; and a lower portion having sidewalls inclined so that the stripe becomes wider toward the active layer.
摘要翻译：半导体激光器件包括：第一导电类型的覆层; 设置在包层上的有源层; 以及设置在有源层上的第二导电类型的覆层。第二导电类型的包覆层的至少一部分具有脊条。脊条包括：具有基本垂直侧壁的上部; 以及具有侧壁倾斜使得条纹朝向有源层变宽的下部。

2. 发明申请

US20050030997A1 Semiconductor laser device and its manufacturing method 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20050030997A1
公开(公告)日：2005-02-10
申请号：US10845666
申请日：2004-05-13
申请人： Akira Tanaka , Yoshiyuki Itoh , Osamu Horiuchi , Akio Makuta , Koichi Gen-Ei , Hideo Shiozawa
发明人： Akira Tanaka , Yoshiyuki Itoh , Osamu Horiuchi , Akio Makuta , Koichi Gen-Ei , Hideo Shiozawa
IPC分类号： G11B7/125 , H01S5/00 , H01S5/02 , H01S5/042 , H01S5/06 , H01S5/065 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/343 , H01S5/40
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/0601 , H01S5/0654 , H01S5/0658 , H01S5/2022 , H01S5/2081 , H01S5/209 , H01S5/2206 , H01S5/2231 , H01S5/3202 , H01S5/34326 , H01S5/3436 , H01S5/4031 , H01S5/4087
摘要： A semiconductor laser device comprises: a cladding layer of a first conductivity type; an active layer provided on the cladding layer; and a cladding layer of a second conductivity type provided on the active layer. At least a part of the cladding layer of the second conductivity type has a ridge stripe. The ridge stripe includes: an upper part having substantially vertical sidewalls; and a lower portion having sidewalls inclined so that the stripe becomes wider toward the active layer.
摘要翻译：半导体激光器件包括：第一导电类型的覆层; 设置在包层上的有源层; 以及设置在有源层上的第二导电类型的覆层。第二导电类型的包覆层的至少一部分具有脊条。脊条包括：具有基本垂直侧壁的上部; 以及具有侧壁倾斜使得条纹朝向有源层变宽的下部。

3. 发明授权

US07295588B2 Semiconductor laser element, method of fabrication thereof, and multi-wavelength monolithic semiconductor laser device 失效
标题翻译：半导体激光元件及其制造方法以及多波长单片半导体激光器件
公开(公告)号：US07295588B2
公开(公告)日：2007-11-13
申请号：US10724570
申请日：2003-11-26
申请人： Akira Tanaka , Hideo Shiozawa , Minoru Watanabe , Koichi Gen-Ei , Hirokazu Tanaka
发明人： Akira Tanaka , Hideo Shiozawa , Minoru Watanabe , Koichi Gen-Ei , Hirokazu Tanaka
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0658 , H01S5/2206 , H01S5/2231 , H01S5/34326 , H01S5/3436 , H01S5/4031 , H01S5/4087
摘要： The present invention provides a semiconductor laser element, a method of fabrication thereof, and a multi-wavelength monolithic semiconductor laser device that achieve self-sustained pulsation up to a high output level and achieve self-sustained pulsation over a wide output range. A semiconductor laser element that exhibits self-sustained pulsation in a predetermined output region, said semiconductor laser element comprising: a substrate; a first conductive type clad layer formed on said substrate; an active layer formed on said first conductive type clad layer for emitting light by current injection; a second conductive type first clad layer formed on said active layer; and a stripe-shaped second conductive type second clad layer formed on said second conductive type first clad layer in a first direction, in such a manner that the cross-sectional surface of said stripe-shaped second conductive type second clad layer in a direction perpendicular to said first direction has a shape having an upper edge and a lower edge that face each other and side edges that connect between said upper edge and said lower edge, where the minimum width thereof is at least 70% but no more than 100% of the maximum width.
摘要翻译：本发明提供一种半导体激光元件及其制造方法，以及多波长单片半导体激光器件，其能够在高输出电平下实现自持脉动，并在宽输出范围内实现自持脉动。一种半导体激光元件，其在预定的输出区域中呈现自持脉动，所述半导体激光元件包括：基板; 形成在所述基板上的第一导电型覆盖层; 形成在所述第一导电型覆盖层上用于通过电流注入发光的有源层; 形成在所述有源层上的第二导电类型的第一覆盖层; 以及在第一方向上形成在所述第二导电型第一覆盖层上的条形第二导电型第二覆盖层，使得所述条形第二导电型第二覆层在垂直方向上的横截面所述第一方向具有彼此面对的上边缘和下边缘以及连接在所述上边缘和所述下边缘之间的侧边缘的形状，其中最小宽度为至少70％但不大于100％最大宽度。

4. 发明授权

US06618420B1 Monolithic multi-wavelength semiconductor laser unit 有权
标题翻译：单片多波长半导体激光器单元
公开(公告)号：US06618420B1
公开(公告)日：2003-09-09
申请号：US09639018
申请日：2000-08-15
申请人： Koichi Gen-Ei , Hideo Shiozawa , Akira Tanaka
发明人： Koichi Gen-Ei , Hideo Shiozawa , Akira Tanaka
IPC分类号： H01S500
CPC分类号： H01S5/4031 , H01S5/4087
摘要： This is a double wavelength semiconductor laser unit having a first laser emitting a light of a first wavelength and a second laser emitting a light of a second wavelength different from the first wavelength. The first and second lasers are merged on a substrate. The first laser has a bulk active layer whose film thickness is 0.01 &mgr;m or more and 0.1 &mgr;m or less. And the second laser has an MQW active layer constituted by stacked structure composed of a quantum well layer and a barrier layer. By employing the bulk active layer for the first laser, it is possible to reduce the band gap discontinuity induced at a boundary between a cladding layer and the bulk active layer, and then decreases an operational voltage, and further improve the reliability of the first laser.
摘要翻译：这是具有发射第一波长的光的第一激光器和发射不同于第一波长的第二波长的光的第二激光器的双波长半导体激光器单元。第一和第二激光器合并在基板上。第一激光器具有膜厚度为0.01μm以上且0.1μm以下的本体活性层。并且第二激光器具有由量子阱层和阻挡层构成的层叠结构构成的MQW有源层。通过采用第一激光器的体积有源层，可以减少在包层和主体有源层之间的边界处引起的带隙不连续性，然后降低工作电压，进一步提高第一激光器的可靠性。

5. 发明授权

US07164701B2 Semiconductor laser and method for manufacturing the same 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US07164701B2
公开(公告)日：2007-01-16
申请号：US10388370
申请日：2003-03-13
申请人： Akira Tanaka , Hirokazu Tanaka , Yoshiyuki Itoh , Koichi Gen-Ei
发明人： Akira Tanaka , Hirokazu Tanaka , Yoshiyuki Itoh , Koichi Gen-Ei
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/162 , H01S5/2086 , H01S5/2201 , H01S5/221 , H01S5/2231 , H01S5/3211 , H01S5/3432
摘要： A high-output semiconductor laser of a real index-guided structure comprises: a first conductive type clad layer; active layer for emitting light by current injection; second conductive type first clad layer; second conductive type second clad layer as a ridge waveguide; current-blocking layer formed in both sides of the second conductive type second clad layer and having a larger band gap than those of the second conductive type first and second clad layers; and second conductive type third clad layer having a mobility enough to guide a current to the second conductive type second clad layer and prevent a flow of a leak current into the current-blocking layer.
摘要翻译：实数折射率引导结构的高输出半导体激光器包括：第一导电型覆盖层; 通过电流注入发光的有源层; 第二导电型第一覆层; 第二导电型第二包层作为脊波导; 电流阻挡层形成在第二导电型第二覆盖层的两侧，并且具有比第二导电型第一和第二覆盖层的带隙更大的带隙; 以及第二导电型第三覆层，其具有足够的迁移率，以将电流引导到第二导电型第二包层，并防止泄漏电流流入电流阻挡层。

6. 发明授权

US06628689B2 Semiconductor laser device and method of fabricating the same 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US06628689B2
公开(公告)日：2003-09-30
申请号：US09808267
申请日：2001-03-14
申请人： Makoto Okada , Koichi Gen-Ei
发明人： Makoto Okada , Koichi Gen-Ei
IPC分类号： H01S500
CPC分类号： H01S5/4031 , H01S5/0287 , H01S5/4087
摘要： A monolithic two-wavelength semiconductor laser device includes a front end face film 19 on a resonator front end face 18, and a high-reflectivity end face film 22 as a multilayered film on a resonator rear end face 21. The front end face film 19 is formed using a low-refractive-index material, and the film thickness is so set that the reflectivity is 20%. The high-reflectivity end face film 22 is formed by alternately stacking thin films of low- and high-refractive-index materials, and the film thickness is so set that the reflectivity is 80%. The film thickness of each of these two end face films is calculated by an optical length d=(¼+j)×&lgr;m by using a mean value &lgr;m=(&lgr;1+&lgr;2)/2 of the oscillation wavelengths of the two semiconductor laser diodes. This makes it possible to obtain an end face film having a desired reflectivity and capable of being formed at once, and to fabricate a two-wavelength semiconductor laser device having high reliability, meeting the required performance, and also having high productivity.
摘要翻译：单片双波长半导体激光装置包括谐振器前端面18上的前端面膜19和谐振器后端面21上作为多层膜的高反射率端面膜22.前端面膜19 使用低折射率材料形成，并且膜厚度被设定为反射率为20％。高反射率端面膜22是通过交替层叠低折射率材料和高折射率材料的薄膜形成的，膜厚设定为反射率为80％。通过使用两个半导体激光二极管的振荡波长的平均值lambdm =（lambd1 + lambd2）/ 2，通过光学长度d =（¼+ j）×lambdm来计算这两个端面膜中的每一个的膜厚度。这使得可以获得具有期望的反射率并能够立即形成的端面膜，并且制造具有高可靠性，满足所需性能并且还具有高生产率的双波长半导体激光器件。

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