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1. 发明授权

US5181218A Manufacturing method of semiconductor laser with non-absorbing mirror structure 失效
标题翻译：具有非吸收镜结构的半导体激光器的制造方法
公开(公告)号：US5181218A
公开(公告)日：1993-01-19
申请号：US619606
申请日：1990-11-29
申请人： Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Kazuhiko Itaya , Yukio Watanabe , Mariko Suzuki , Genichi Hatakoshi
发明人： Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Kazuhiko Itaya , Yukio Watanabe , Mariko Suzuki , Genichi Hatakoshi
IPC分类号： H01S5/16 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/162 , H01S5/168 , H01S5/2231 , H01S5/3206 , H01S5/32325
摘要： An InGaAlP NAM structure laser is formed with a double-heterostructure section disposed on an n-type GaAs substrate. The double-heterostructure section includes a first cladding layer of n-type InGaAlP, a non-doped InGaP active layer, and a second cladding layer of p-type InGaAlP. An n-type GaAs current-blocking layer having a stripe opening and a p-type GaAs contact layer are sequentially formed on the second cladding layer by MOCVD crystal growth. A low-energy band gap region is defined in a central region of the active layer located immediately below the stripe opening. A high-energy band gap region is defined in a peripheral region of the active layer corresponding to a light output end portion of the laser and located immediately below the current-blocking layer. Therefore, self absorption of an oscillated laser beam at the output end portion can be reduced or prevented.
摘要翻译： InGaAlP NAM结构激光器形成有设置在n型GaAs衬底上的双异质结构部分。双异质结构部分包括n型InGaAlP的第一包层，未掺杂的InGaP有源层和p型InGaAlP的第二包层。通过MOCVD晶体生长，在第二覆层上依次形成具有条形开口和p型GaAs接触层的n型GaAs电流阻挡层。在位于条形开口正下方的活性层的中心区域中限定低能带隙区域。在活性层的与激光的光输出端部对应的周边区域中限定高能带隙区域，位于电流阻挡层的正下方。因此，可以减少或防止在输出端部处的振荡的激光束的自吸收。

2. 发明授权

US4987096A Manufacturing method of semiconductor laser with non-absorbing mirror structure 失效
标题翻译：具有非吸收镜结构的半导体激光器的制造方法
公开(公告)号：US4987096A
公开(公告)日：1991-01-22
申请号：US450063
申请日：1989-12-13
申请人： Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Kazuhiko Itaya , Yukio Watanabe , Mariko Suzuki , Genichi Hatakoshi
发明人： Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Kazuhiko Itaya , Yukio Watanabe , Mariko Suzuki , Genichi Hatakoshi
IPC分类号： H01S5/00 , H01S5/042 , H01S5/16 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/162 , H01S5/168 , H01S5/2231 , H01S5/3206 , H01S5/32325 , Y10S148/025 , Y10S148/095
摘要： An InGaAlP NAM structure laser is formed with a double-heterostructure section disposed on an n-type GaAs substrate. The double-heterostructure section includes a first cladding layer of n-type InGaAlP, a non-doped InGaP active layer, and a second cladding layer of p-type InGaAlP. An n-type GaAs current-blocking layer having a stripe opening and a p-type GaAs contact layer are sequentially formed on the second cladding layer by MOCVD crystal growth. A low-energy band gap region is defined in a central region of the active layer located immediately below the stripe opening. A high-energy band gap region is defined in a peripheral region of the active layer corresponding to a light output end portion of the laser and located immediately below the current-blocking layer. Therefore, self absorption of an oscillated laser beam at the output end portion can be reduced or prevented.

3. 发明授权

US5036521A Semiconductor laser device 失效
公开(公告)号：US5036521A
公开(公告)日：1991-07-30
申请号：US439428
申请日：1989-11-21
申请人： Genichi Hatakoshi , Kazuhiko Itaya , Shigeya Naritsuka , Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Yukio Watanabe , Yasuo Ohba , Yoshihiro Kokubun , Yutaka Uematsu
发明人： Genichi Hatakoshi , Kazuhiko Itaya , Shigeya Naritsuka , Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Yukio Watanabe , Yasuo Ohba , Yoshihiro Kokubun , Yutaka Uematsu
IPC分类号： H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/32325 , H01S5/2004 , H01S5/2231 , H01S5/3211
摘要： In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities:0.015.DELTA..sup.1/2

4. 发明授权

US4893313A Semiconductor laser device which has a double-hetero structure having an optimal layer thickness 失效
标题翻译：具有最佳层厚度的双异质结构的半导体激光器件
公开(公告)号：US4893313A
公开(公告)日：1990-01-09
申请号：US323400
申请日：1989-03-14
申请人： Genichi Hatakoshi , Kazuhiko Itaya , Shigeya Naritsuka , Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Yukio Watanabe , Yasuo Ohba , Yoshihiro Kokubun , Yutaka Uematsu
发明人： Genichi Hatakoshi , Kazuhiko Itaya , Shigeya Naritsuka , Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Yukio Watanabe , Yasuo Ohba , Yoshihiro Kokubun , Yutaka Uematsu
IPC分类号： H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/32325 , H01S5/2004 , H01S5/2231 , H01S5/3211
摘要： In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities:0.015.DELTA..sup.1/2

5. 发明授权

US5023880A Semiconductor laser device 失效
公开(公告)号：US5023880A
公开(公告)日：1991-06-11
申请号：US478961
申请日：1990-02-12
申请人： Mariko Suzuki , Kazuhiko Itaya , Masayuki Ishikawa , Yukio Watanabe , Genichi Hatakoshi
发明人： Mariko Suzuki , Kazuhiko Itaya , Masayuki Ishikawa , Yukio Watanabe , Genichi Hatakoshi
IPC分类号： H01S5/00 , H01S5/042 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/32325 , H01S5/2231 , H01S5/0421 , H01S5/209 , H01S5/2206 , H01S5/221 , H01S5/321
摘要： A semiconductor laser device including a semiconductor substrate of a first conductivity type, a double hetero structure, including of a lower cladding layer of the first conductivity type, an active layer, and a first upper cladding layer of In.sub.1-w (Ga.sub.1-y Al.sub.y)wp of the second conductivity type formed on the semiconductor substrate, a second upper cladding layer of In.sub.1-w (Ga.sub.1-w Al.sub.z).sub.w P of the second conductivity type partially formed on the first upper cladding layer, a first contact layer of In.sub.1-w (Ga.sub.1-s Al.sub.s).sub.w P (0

6. 发明授权

US5058120A Visible light emitting semiconductor laser with inverse mesa-shaped groove section 失效
标题翻译：可见光发射半导体激光器，具有反向MESA形状的沟道部分
公开(公告)号：US5058120A
公开(公告)日：1991-10-15
申请号：US634546
申请日：1990-12-27
申请人： Koichi Nitta , Yukio Watanabe , Yukie Nishikawa , Masaki Okajima , Genichi Hatakoshi
发明人： Koichi Nitta , Yukio Watanabe , Yukie Nishikawa , Masaki Okajima , Genichi Hatakoshi
IPC分类号： H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/2231 , H01S5/321 , H01S5/32325
摘要： A visible light emitting semiconductor laser has a double-heterostructure section above the N-type GaAs substrate, which is composed of a nondoped InGaP active layer sandwiched between an N type InGaAlP cladding layer and a P type InGaAlP cladding layer. A P type InGaP thin-film layer formed on the P type cladding layer functions as an etching stopper. Formed sequentially on the etching stopper layer are a P type cladding layer and an N type GaAs current-blocking layer, which have a stripe-shaped groove section in and around their central portion. The groove section has an opening at the top and the bottom portion narrower than the opening, presenting an inverse-trapezoidal cross-sectional profile. This arrangement makes the width of the optical confinement region of the semiconductor laser narrower than that of the current injection region.

7. 发明授权

US4949349A Double-heterostructure semiconductor with mesa stripe waveguide 失效
标题翻译：双异质结半导体与台面条纹波导
公开(公告)号：US4949349A
公开(公告)日：1990-08-14
申请号：US279816
申请日：1988-12-05
申请人： Yasuo Ohba , Niyoko Watanabe , Hideto Sugawara , Masayuki Ishikawa , Yukio Watanabe , Motoyuki Yamamoto
发明人： Yasuo Ohba , Niyoko Watanabe , Hideto Sugawara , Masayuki Ishikawa , Yukio Watanabe , Motoyuki Yamamoto
IPC分类号： H01S5/20 , H01S5/223 , H01S5/323
CPC分类号： H01S5/20 , H01S5/2231 , H01S5/32325
摘要： A double-heterostructure semiconductor laser is disclosed which has a semiconductive substrate of a first conductivity type made of III-V compound semiconductor material, a first semiconductive cladding layer of the first conductivity type disposed above the substrate, an active layer made of a semiconductor film provided on said cladding layer to serve as a light emission layer, and a second semiconductive cladding layer of a second conductivity type provided on the active layer to define a light waveguide channel of the laser. The second cladding layer is made of a compound semiconductor containing indium, phosphorus, and aluminum. A contact layer section is provided on the second cladding layer to cover the light waveguide channel. The contact layer is made of a compound semiconductor material containing gallium and arsenic, and has a band gap discontinuity at a boundary region of the light waveguide channel to form a barrier which serves to effectively seal current carriers in the waveguide channel, while the laser is emitting a laser light. This contact layer may also serve as a current-blocking layer.

8. 发明授权

US4809287A Double-heterostructure semiconductor with mesa stripe waveguide 失效
标题翻译：双异质结半导体与台面条纹波导
公开(公告)号：US4809287A
公开(公告)日：1989-02-28
申请号：US83189
申请日：1987-08-10
申请人： Yasuo Ohba , Miyoko Watanabe , Hideto Sugawara , Masayuki Ishikawa , Yukio Watanabe , Motoyuki Yamamoto
发明人： Yasuo Ohba , Miyoko Watanabe , Hideto Sugawara , Masayuki Ishikawa , Yukio Watanabe , Motoyuki Yamamoto
IPC分类号： H01S5/20 , H01S5/223 , H01S5/323 , H01S3/19
CPC分类号： H01S5/20 , H01S5/2231 , H01S5/32325
摘要： Disclosed herein is a double-heterostructure semiconductor laser which emits a laser beam in a visible light range at ambient temperature. An active layer serving as a light emission layer is sandwiched between first and second cladding layers. The first cladding layer comprises an n type InAlP, while the second cladding layer comprises a p type InAlP and has a mesa stripe shape having slanted side surfaces so as to define a light waveguide channel of the semiconductor laser. Current-blocking layers are formed to cover the slanted side surfaces of the second cladding layer. The current-blocking layers comprise GaAs which is a III-V group compound semiconductor different from the III-V group compound semiconductor (i.e., InAlP) comprised in the second cladding layer. The composition ratio of aluminum in the second cladding layer is set not to be less than 0.4, whereby a Shottky barrier serving to inhibit or suppress a current leak in the light waveguide channel of the semiconductor laser is formed between the second cladding layer and the current-blocking layers.
摘要翻译：本文公开了一种在环境温度下发射可见光范围的激光束的双异质结构半导体激光器。用作发光层的有源层夹在第一和第二覆层之间。第一包层包括n型InAlP，而第二包层包括p型InAlP，并且具有具有倾斜侧表面的台面条状形状，以便限定半导体激光器的光波导通道。形成电流阻挡层以覆盖第二覆层的倾斜侧表面。电流阻挡层包括GaAs，其是与包含在第二覆层中的III-V族化合物半导体（即，InAlP）不同的III-V族化合物半导体。第二包覆层中的铝的组成比设定为不小于0.4，由此形成用于抑制或抑制半导体激光器的光波导通道中的电流泄漏的肖特基势垒，在第二包覆层和电流阻挡层。

9. 发明授权

US4792958A Semiconductor laser with mesa stripe waveguide structure 失效
标题翻译：半导体激光器与台面条纹波导结构
公开(公告)号：US4792958A
公开(公告)日：1988-12-20
申请号：US19332
申请日：1987-02-26
申请人： Yasuo Ohba , Masayuki Ishikawa , Motoyuki Yamamoto , Yukio Watanabe , Hideto Sugawara
发明人： Yasuo Ohba , Masayuki Ishikawa , Motoyuki Yamamoto , Yukio Watanabe , Hideto Sugawara
IPC分类号： H01S5/042 , H01S5/223 , H01S5/30 , H01S5/323 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/0421 , H01S5/3054 , H01S5/32325 , Y10S148/095
摘要： There is disclosed a semiconductor layer which can emit a continuous laser beam in a visible wavelength range. The laser has an n-GaAs substrate. On this substrate, an n-InGaAlP cladding layer, an active layer, and p-InGaAlP cladding layers are sequentially formed, thus forming a double hetero-structure. A mesa-shaped, upper cladding layer is provided, defining a laser beam-guiding channel. A thin p-InGaAlP contact layer and a mesa-shaped, p-GaAs contact layer are formed on the top surface of the upper cladding layer. Two n-type semiconductive, current-blocking layers cover the slanted sides of the upper, mesa-shaped cladding layer and also the contact layer. They are made of the same n-GaAs compound semiconductor material as the substrate.
摘要翻译：公开了可发射可见波长范围的连续激光束的半导体层。激光器具有n-GaAs衬底。在该基板上依次形成n-InGaAlP包覆层，有源层和p-InGaAlP覆盖层，形成双异质结构。提供了台面形的上包层，其限定了激光束引导通道。在上包层的顶表面上形成薄的p-InGaAlP接触层和台面形状的p-GaAs接触层。两个n型半导体电流阻挡层覆盖上部台阶形覆层的倾斜侧面以及接触层。它们由与衬底相同的n-GaAs化合物半导体材料制成。

10. 发明授权

US4910743A Semiconductor laser with mesa stripe waveguide structure 失效
标题翻译：半导体激光器与台面条纹波导结构
公开(公告)号：US4910743A
公开(公告)日：1990-03-20
申请号：US283796
申请日：1988-12-13
申请人： Yasuo Ohba , Masayuki Ishikawa , Motoyuki Yamamoto , Yukio Watanabe , Hideto Sugawara
发明人： Yasuo Ohba , Masayuki Ishikawa , Motoyuki Yamamoto , Yukio Watanabe , Hideto Sugawara
IPC分类号： H01S5/042 , H01S5/223 , H01S5/30 , H01S5/323
CPC分类号： H01S5/2231 , H01S5/0421 , H01S5/3054 , H01S5/32325 , Y10S148/095
摘要： There is disclosed a semiconductor layer which can emit a continuous laser beam in a visible wavelength range. The laser has an n-GaAs substrate. On this substrate, an n-InGaAlP cladding layer, an active layer, and p-InGaAlP cladding layers are sequentially formed, thus forming a double hetero-structure. A mesa-shaped, upper cladding layer is provided, defining a laser beam-guiding channel. A thin p-InGaAlP contact layer and a mesa-shaped, p-GaAs contact layer are formed on the top surface of the upper cladding layer. Two n-type semiconductive, current-blocking layers cover the slanted sides of the upper, mesa-shaped cladding layer and also the contact layer. They are made of the same n-GaAs compound semiconductor material as the substrate.

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