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1. 发明授权

US5036521A Semiconductor laser device 失效
公开(公告)号：US5036521A
公开(公告)日：1991-07-30
申请号：US439428
申请日：1989-11-21
申请人： Genichi Hatakoshi , Kazuhiko Itaya , Shigeya Naritsuka , Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Yukio Watanabe , Yasuo Ohba , Yoshihiro Kokubun , Yutaka Uematsu
发明人： Genichi Hatakoshi , Kazuhiko Itaya , Shigeya Naritsuka , Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Yukio Watanabe , Yasuo Ohba , Yoshihiro Kokubun , Yutaka Uematsu
IPC分类号： H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/32325 , H01S5/2004 , H01S5/2231 , H01S5/3211
摘要： In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities:0.015.DELTA..sup.1/2

2. 发明授权

US4893313A Semiconductor laser device which has a double-hetero structure having an optimal layer thickness 失效
标题翻译：具有最佳层厚度的双异质结构的半导体激光器件
公开(公告)号：US4893313A
公开(公告)日：1990-01-09
申请号：US323400
申请日：1989-03-14
申请人： Genichi Hatakoshi , Kazuhiko Itaya , Shigeya Naritsuka , Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Yukio Watanabe , Yasuo Ohba , Yoshihiro Kokubun , Yutaka Uematsu
发明人： Genichi Hatakoshi , Kazuhiko Itaya , Shigeya Naritsuka , Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Yukio Watanabe , Yasuo Ohba , Yoshihiro Kokubun , Yutaka Uematsu
IPC分类号： H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/32325 , H01S5/2004 , H01S5/2231 , H01S5/3211
摘要： In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities:0.015.DELTA..sup.1/2

3. 发明授权

US5181218A Manufacturing method of semiconductor laser with non-absorbing mirror structure 失效
标题翻译：具有非吸收镜结构的半导体激光器的制造方法
公开(公告)号：US5181218A
公开(公告)日：1993-01-19
申请号：US619606
申请日：1990-11-29
申请人： Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Kazuhiko Itaya , Yukio Watanabe , Mariko Suzuki , Genichi Hatakoshi
发明人： Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Kazuhiko Itaya , Yukio Watanabe , Mariko Suzuki , Genichi Hatakoshi
IPC分类号： H01S5/16 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/162 , H01S5/168 , H01S5/2231 , H01S5/3206 , H01S5/32325
摘要： An InGaAlP NAM structure laser is formed with a double-heterostructure section disposed on an n-type GaAs substrate. The double-heterostructure section includes a first cladding layer of n-type InGaAlP, a non-doped InGaP active layer, and a second cladding layer of p-type InGaAlP. An n-type GaAs current-blocking layer having a stripe opening and a p-type GaAs contact layer are sequentially formed on the second cladding layer by MOCVD crystal growth. A low-energy band gap region is defined in a central region of the active layer located immediately below the stripe opening. A high-energy band gap region is defined in a peripheral region of the active layer corresponding to a light output end portion of the laser and located immediately below the current-blocking layer. Therefore, self absorption of an oscillated laser beam at the output end portion can be reduced or prevented.
摘要翻译： InGaAlP NAM结构激光器形成有设置在n型GaAs衬底上的双异质结构部分。双异质结构部分包括n型InGaAlP的第一包层，未掺杂的InGaP有源层和p型InGaAlP的第二包层。通过MOCVD晶体生长，在第二覆层上依次形成具有条形开口和p型GaAs接触层的n型GaAs电流阻挡层。在位于条形开口正下方的活性层的中心区域中限定低能带隙区域。在活性层的与激光的光输出端部对应的周边区域中限定高能带隙区域，位于电流阻挡层的正下方。因此，可以减少或防止在输出端部处的振荡的激光束的自吸收。

4. 发明授权

US4987096A Manufacturing method of semiconductor laser with non-absorbing mirror structure 失效
标题翻译：具有非吸收镜结构的半导体激光器的制造方法
公开(公告)号：US4987096A
公开(公告)日：1991-01-22
申请号：US450063
申请日：1989-12-13
申请人： Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Kazuhiko Itaya , Yukio Watanabe , Mariko Suzuki , Genichi Hatakoshi
发明人： Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Kazuhiko Itaya , Yukio Watanabe , Mariko Suzuki , Genichi Hatakoshi
IPC分类号： H01S5/00 , H01S5/042 , H01S5/16 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/162 , H01S5/168 , H01S5/2231 , H01S5/3206 , H01S5/32325 , Y10S148/025 , Y10S148/095
摘要： An InGaAlP NAM structure laser is formed with a double-heterostructure section disposed on an n-type GaAs substrate. The double-heterostructure section includes a first cladding layer of n-type InGaAlP, a non-doped InGaP active layer, and a second cladding layer of p-type InGaAlP. An n-type GaAs current-blocking layer having a stripe opening and a p-type GaAs contact layer are sequentially formed on the second cladding layer by MOCVD crystal growth. A low-energy band gap region is defined in a central region of the active layer located immediately below the stripe opening. A high-energy band gap region is defined in a peripheral region of the active layer corresponding to a light output end portion of the laser and located immediately below the current-blocking layer. Therefore, self absorption of an oscillated laser beam at the output end portion can be reduced or prevented.

5. 发明授权

US5153889A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US5153889A
公开(公告)日：1992-10-06
申请号：US747128
申请日：1991-08-19
申请人： Hideto Sugawara , Masayuki Ishikawa , Yoshihiro Kokubun , Yukie Nishikawa , Shigeya Naritsuka , Kazuhiko Itaya , Genichi Hatakoshi , Mariko Suzuki
发明人： Hideto Sugawara , Masayuki Ishikawa , Yoshihiro Kokubun , Yukie Nishikawa , Shigeya Naritsuka , Kazuhiko Itaya , Genichi Hatakoshi , Mariko Suzuki
IPC分类号： H01L33/00 , H01L33/10 , H01L33/14 , H01L33/30 , H01S5/042 , H01S5/183 , H01S5/22 , H01S5/30 , H01S5/32 , H01S5/323 , H01S5/343
CPC分类号： H01L33/145 , B82Y20/00 , H01L33/0025 , H01L33/0066 , H01L33/10 , H01L33/14 , H01L33/30
摘要： Disclosed is a semiconductor light emitting device, comprising a semiconductor substrate, a double hetero structure portion formed on the front surface of the substrate and consisting of an InGaAlP active layer and lower and upper clad layers having the active layer sandwiched therebetween, a first electrode formed in a part of the surface of the double hetero structure portion, and a second electrode formed on the back surface of the substrate. A current diffusion layer formed of GaAlAs is interposed between the double hetero structure portion and the first electrode, said current diffusion layer having a thickness of 5 to 30 microns and a carrier concentration of 5.times.10.sup.17 cm.sup.-3 to 5.times.10.sup.18 cm.sup.-3.
摘要翻译：公开了一种半导体发光器件，包括半导体衬底，形成在衬底的前表面上并由InGaAlP有源层组成的双异质结构部分和其间夹有有源层的下和上和外包层，形成的第一电极在双异质结构部分的表面的一部分中，以及形成在基板的背面上的第二电极。由GaAlAs形成的电流扩散层介于双异质结构部分和第一电极之间，所述电流扩散层的厚度为5至30微米，载流子浓度为5×10 17 cm -3至5×10 18 cm -3。

6. 发明授权

US5034957A Semiconductor laser device 失效
公开(公告)号：US5034957A
公开(公告)日：1991-07-23
申请号：US307278
申请日：1989-02-07
申请人： Yasuo Ohba , Yukie Nishikawa , Hajime Okuda , Masayuki Ishikawa , Hideto Sugawara , Hideo Shiozawa , Yoshihiro Kokubun
发明人： Yasuo Ohba , Yukie Nishikawa , Hajime Okuda , Masayuki Ishikawa , Hideto Sugawara , Hideo Shiozawa , Yoshihiro Kokubun
IPC分类号： H01L33/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/30 , H01S5/323
CPC分类号： H01S5/20 , H01L33/0062 , H01S5/305 , H01S5/32325 , H01S5/2059 , H01S5/2206 , H01S5/2231 , H01S5/3054
摘要： A semiconductor laser device using double heterostructure comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1), capable of preventing the leakage of the carriers and thereby reducing the threshold current, being operative with small threshold current density and at high temperature, and having a long lifetime. The device may include a double heterostructure formed on the GaAs substrate, comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) including an active layer, the active layer having an impurity concentration not greater than 5.times.10.sup.16 cm.sup.-3. The device may include a double heterostructure formed on the GaAs substrate, comprised of InGaP active layer and p-type In.sub.q (Ga.sub.1-z Al.sub.z).sub.q P (0.ltoreq.q.ltoreq.1, 0.ltoreq.z.ltoreq.1) cladding layer with a value of z between 0.65 and 0.75. The device may include a double heterostructure formed on the GaAs substrate, comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) including an n-type cladding layer and an p-type cladding layer, one of the n-type cladding layer and the p-type cladding layer being Si-doped. A method of manufacturing the device is also disclosed.

7. 发明授权

US5023880A Semiconductor laser device 失效
公开(公告)号：US5023880A
公开(公告)日：1991-06-11
申请号：US478961
申请日：1990-02-12
申请人： Mariko Suzuki , Kazuhiko Itaya , Masayuki Ishikawa , Yukio Watanabe , Genichi Hatakoshi
发明人： Mariko Suzuki , Kazuhiko Itaya , Masayuki Ishikawa , Yukio Watanabe , Genichi Hatakoshi
IPC分类号： H01S5/00 , H01S5/042 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/32325 , H01S5/2231 , H01S5/0421 , H01S5/209 , H01S5/2206 , H01S5/221 , H01S5/321
摘要： A semiconductor laser device including a semiconductor substrate of a first conductivity type, a double hetero structure, including of a lower cladding layer of the first conductivity type, an active layer, and a first upper cladding layer of In.sub.1-w (Ga.sub.1-y Al.sub.y)wp of the second conductivity type formed on the semiconductor substrate, a second upper cladding layer of In.sub.1-w (Ga.sub.1-w Al.sub.z).sub.w P of the second conductivity type partially formed on the first upper cladding layer, a first contact layer of In.sub.1-w (Ga.sub.1-s Al.sub.s).sub.w P (0

8. 发明授权

US5048035A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US5048035A
公开(公告)日：1991-09-10
申请号：US530120
申请日：1990-05-29
申请人： Hideto Sugawara , Masayuki Ishikawa , Yoshihiro Kokubun , Yukie Nishikawa , Shigeya Naritsuka
发明人： Hideto Sugawara , Masayuki Ishikawa , Yoshihiro Kokubun , Yukie Nishikawa , Shigeya Naritsuka
IPC分类号： H01L33/00 , H01L33/14 , H01L33/30 , H01L33/38 , H01S5/042 , H01S5/183 , H01S5/22 , H01S5/30 , H01S5/32 , H01S5/343
CPC分类号： H01L33/38 , B82Y20/00 , H01L33/0025 , H01L33/14 , H01L33/145 , H01L33/30 , H01L33/387
摘要： A semiconductor light emitting device, especially, a light emitting diode includes a compound semiconductor substrate of a first conductivity type, an InGaAlP layer formed on the substrate and having a light emitting region, a GaAlAs layer of a second conductivity type formed on the InGaAlP layer and having a larger band gap than that of the InGaAlP layer, and an electrode formed on a part of the GaAlAs layer. The light emitting diode emits light from a surface at the electrode side except for the electrode. A current from the electrode is widely spread by the GaAlAs layer to widely spread a light emitting region.
摘要翻译：一种半导体发光器件，特别是发光二极管，包括第一导电类型的化合物半导体衬底，形成在衬底上并具有发光区域的InGaAlP层，形成在InGaAlP层上的第二导电类型的GaAlAs层并且具有比InGaAlP层更大的带隙，以及形成在GaAlAs层的一部分上的电极。发光二极管从除了电极之外的电极侧的表面发光。来自电极的电流被GaAlAs层广泛扩散，以广泛扩散发光区域。

9. 发明授权

US6057565A Semiconductor light emitting device including a non-stoichiometric compound layer and manufacturing method thereof 失效
标题翻译：包括非化学计量的化合物层的半导体发光器件及其制造方法
公开(公告)号：US6057565A
公开(公告)日：2000-05-02
申请号：US937166
申请日：1997-09-25
申请人： Hiroaki Yoshida , Masayuki Ishikawa , Hidetoshi Fujimoto , Yoshihiro Kokubun , Genichi Hatakoshi
发明人： Hiroaki Yoshida , Masayuki Ishikawa , Hidetoshi Fujimoto , Yoshihiro Kokubun , Genichi Hatakoshi
IPC分类号： H01L33/14 , H01L33/32 , H01L33/00
CPC分类号： H01L33/32 , H01L33/14 , H01L33/325
摘要： In the semiconductor light emitting device, a high resistance layer formed by mutual diffusion at an interface with the substrate crystal can be eliminated, and a low resistance p-type contact can be realized. In addition, it is possible to reduce the leak current when an internal current-blocking structure is formed. In practice, a compound semiconductor layer offset in composition ratio stoichiometrically is used as the contact layer. Further, when a predetermined element is added to the contact layer, a large amount of doping can be enabled in comparison with when impurities are added to the ordinary GaN based layer. Therefore, a high concentration conductive type layer can be realized while reducing the contact resistance. In addition, when the compound semiconductor layer offset away from the stoichiometric composition is used as the current-blocking layer, the current-blocking efficiency can be improved. Further, when the substrate is irradiated with light having energy slightly higher than that of the band gap of the grown crystal in the photo-excitation MOCVD method in order to eliminate the rough surface, it is possible to realize the p-type conductive of high carrier concentration.
摘要翻译：在半导体发光器件中，可以消除在与衬底晶体的界面处相互扩散形成的高电阻层，并且可以实现低电阻p型接触。此外，当形成内部阻流结构时，可以减小泄漏电流。实际上，化学计量组成比偏移的化合物半导体层用作接触层。此外，当向接触层添加预定元素时，与将杂质添加到普通的GaN基层相比，可以实现大量的掺杂。因此，可以在降低接触电阻的同时实现高浓度导电型层。另外，当偏离化学计量组成的化合物半导体层用作电流阻挡层时，可以提高电流阻挡效率。此外，为了消除粗糙表面，为了消除粗糙表面，当在光激发MOCVD方法中照射具有比生长晶体的带隙稍高的光的基板时，可以实现高的p型导电载体浓度。

10. 发明授权

US5780873A Semiconductor device capable of easily forming cavity and its manufacturing method 失效
标题翻译：能够容易地形成腔体的半导体装置及其制造方法
公开(公告)号：US5780873A
公开(公告)日：1998-07-14
申请号：US689689
申请日：1996-08-13
申请人： Kazuhiko Itaya , Masahiro Yamamoto , Masaaki Onomura , Hidetoshi Fujimoto , Genichi Hatakoshi , Hideto Sugawara , Masayuki Ishikawa , John Rennie , Shinji Saito
发明人： Kazuhiko Itaya , Masahiro Yamamoto , Masaaki Onomura , Hidetoshi Fujimoto , Genichi Hatakoshi , Hideto Sugawara , Masayuki Ishikawa , John Rennie , Shinji Saito
IPC分类号： H01L27/15 , H01L33/06 , H01L33/08 , H01L33/14 , H01L33/16 , H01L33/20 , H01L33/32 , H01S5/00 , H01S5/02 , H01S5/323 , H01S5/343 , H01S5/40 , H01L33/00 , H01L29/04 , H01L31/036
CPC分类号： H01L33/32 , B82Y20/00 , H01L27/156 , H01L33/007 , H01L33/0075 , H01L33/16 , H01S5/0215 , H01S5/34333 , H01S5/0202 , H01S5/0208 , H01S5/021 , H01S5/0213 , H01S5/0217 , H01S5/0218 , H01S5/2231 , H01S5/2232 , H01S5/3202 , H01S5/32391 , H01S5/34326 , H01S5/4043 , H01S5/4087
摘要： A semiconductor light-emitting device comprises a semiconductor light-emitting device section of a hexagonal type; and an electrically conductive semiconductor substrate of a cubic type combined into the semiconductor light-emitting device, and having an orientation of its cleavage facet conformed to an orientation of the cleavage facet of one of semiconductor layers forming the semiconductor light-emitting device section. The substrate of the cubic type is cleaved so that the semiconductor light-emitting device section of the hexagonal type is induced to be cleaved, and that a mirror surface can be easily formed.
摘要翻译：半导体发光器件包括六边形的半导体发光器件部分; 以及组合到半导体发光器件中的立方体的导电半导体衬底，并且其解理面的取向符合形成半导体发光器件部分的半导体层之一的解理面的取向。立方体的基板被切割，使得六方型的半导体发光器件部分被诱导被切割，并且可以容易地形成镜面。

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