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1. 发明申请

US20230024014A1 IMAGE FORMING APPARATUS 有权
公开(公告)号：US20230024014A1
公开(公告)日：2023-01-26
申请号：US17854637
申请日：2022-06-30
申请人： Takato MOCHIZUKI , Kentaroh FUKAMI , Yuuki NAKAGAWA , Atsushi KURIYAMA , Yusuke TANAKA , Akikazu IWATA , Yasuo OHBA , Hiroki YOSHIDA , Takuya FUKUHARA , Ryoh SUZUKI
发明人： Takato MOCHIZUKI , Kentaroh FUKAMI , Yuuki NAKAGAWA , Atsushi KURIYAMA , Yusuke TANAKA , Akikazu IWATA , Yasuo OHBA , Hiroki YOSHIDA , Takuya FUKUHARA , Ryoh SUZUKI
IPC分类号： B65H5/00 , B65H5/36
摘要： A post-processing apparatus includes a first conveyor, a second conveyor, a third conveyor, and a conveyance passage corrector. The first conveyor conveys a sheet conveyed along a first conveyance passage downstream from the first conveyor. The second conveyor conveys the sheet along a second conveyance passage. The third conveyor conveys the sheet along a third conveyance passage. The conveyance passage corrector includes a retracting mechanism to retract from a joining position at which the third conveyance passage joins to the first conveyance passage and turns a conveyance direction of the sheet toward the first conveyor when the sheet enters from the third conveyance passage to the first conveyance passage.

2. 发明授权

US09130127B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09130127B2
公开(公告)日：2015-09-08
申请号：US13204082
申请日：2011-08-05
申请人： Hiroshi Katsuno , Yasuo Ohba , Satoshi Mitsugi , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
发明人： Hiroshi Katsuno , Yasuo Ohba , Satoshi Mitsugi , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
IPC分类号： H01L33/38 , H01L33/22
CPC分类号： H01L33/382 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/385 , H01L2224/48091 , H01L2224/73265 , H01L2933/0091 , H01L2924/00014
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure body, first and second electrodes. The stacked structure body includes first and second semiconductor layers and a light emitting layer provided between the second and first semiconductor layers, and has first and second major surfaces. The first electrode has a first contact part coming into contact with the first semiconductor layer. The second electrode has a part coming into contact with the second semiconductor layer. A surface of the first semiconductor layer on a side of the first major surface has a first part having a part overlapping a contact surface with the first semiconductor layer and a second part having a part overlapping the second semiconductor layer. The second part has irregularity. A pitch of the irregularity is longer than a peak wavelength of emission light. The first part has smaller irregularity than the second part.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体，第一和第二电极。叠层结构体包括第一和第二半导体层以及设置在第二和第一半导体层之间的发光层，并且具有第一和第二主表面。第一电极具有与第一半导体层接触的第一接触部分。第二电极具有与第二半导体层接触的部分。第一主表面一侧的第一半导体层的表面具有第一部分，其第一部分具有与第一半导体层的接触表面重叠的部分，第二部分具有与第二半导体层重叠的部分。第二部分是不规律的。不规则的间距比发光的峰值波长长。第一部分具有比第二部分更小的不规则性。

3. 发明授权

US08729583B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08729583B2
公开(公告)日：2014-05-20
申请号：US12873670
申请日：2010-09-01
申请人： Hiroshi Katsuno , Yasuo Ohba , Mitsuhiro Kushibe , Kei Kaneko , Shinji Yamada
发明人： Hiroshi Katsuno , Yasuo Ohba , Mitsuhiro Kushibe , Kei Kaneko , Shinji Yamada
IPC分类号： H01L33/22
CPC分类号： H01L33/382 , H01L33/22 , H01L33/405 , H01L2224/48091 , H01L2224/73265 , H01L2924/19107 , H01L2924/00014
摘要： According to one embodiment, a semiconductor light-emitting device includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer, a third semiconductor layer and a first electrode. The first semiconductor layer of a first conductivity type has a first major surface provided with a first surface asperity. The second semiconductor layer of a second conductivity type is provided on an opposite side of the first semiconductor layer from the first major surface. The light-emitting layer is provided between the first and second semiconductor layers. The first semiconductor layer is disposed between a third semiconductor layer and the light-emitting layer. The third semiconductor layer has an impurity concentration lower than an impurity concentration of the first semiconductor layer, and includes an opening exposing the first surface asperity. The first electrode is in contact with the first surface asperity through the opening, and reflective to emission light emitted from the light-emitting layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层，发光层，第三半导体层和第一电极。第一导电类型的第一半导体层具有设置有第一表面粗糙度的第一主表面。第二导电类型的第二半导体层设置在第一半导体层与第一主表面相对的一侧上。发光层设置在第一和第二半导体层之间。第一半导体层设置在第三半导体层和发光层之间。第三半导体层的杂质浓度低于第一半导体层的杂质浓度，并且包括露出第一表面粗糙度的开口。第一电极通过开口与第一表面凹凸接触，并且反射到从发光层发射的发射光。

4. 发明授权

US08692228B2 Semiconductor light emitting device and wafer 有权
标题翻译：半导体发光器件和晶圆
公开(公告)号：US08692228B2
公开(公告)日：2014-04-08
申请号：US13671578
申请日：2012-11-08
申请人： Kei Kaneko , Yasuo Ohba , Hiroshi Katsuno , Mitsuhiro Kushibe
发明人： Kei Kaneko , Yasuo Ohba , Hiroshi Katsuno , Mitsuhiro Kushibe
IPC分类号： H01L29/06
CPC分类号： H01L33/0025 , H01L33/06 , H01L33/325
摘要： A semiconductor light emitting device includes a first layer including at least one of n-type GaN and n-type AlGaN; a second layer including Mg-containing p-type AlGaN; and a light emitting section provided between the first and second layers. The light emitting section includes barrier layers of Si-containing AlxGa1-x-yInyN (0≦x, 0≦y, x+y≦1), and a well layer provided between the barrier layers and made of GaInN or AlGaInN. The barrier layers have a nearest barrier layer nearest to the second layer among the barrier layers and a far barrier layer. The nearest barrier layer includes a first portion made of Si-containing AlxGa1-x-yInyN (0≦x, 0≦y, x+y≦1), and a second portion provided between the first portion and the second layer and made of AlxGa1-x-yInyN (0≦x, 0≦y, x+y≦1). The Si concentration in the second portion is lower than those in the first portion and in the far barrier layer.
摘要翻译：半导体发光器件包括包括n型GaN和n型AlGaN中的至少一种的第一层; 包含含Mg的p型AlGaN的第二层; 以及设置在第一层和第二层之间的发光部。发光部分包括含Si的Al x Ga 1-x-y In y N（0＆nl E; x，0＆nl E; y，x + y＆nlE; 1）的势垒层，以及设置在阻挡层之间并由GaInN或AlGaInN制成的阱层。阻挡层在阻挡层和远的阻挡层之间具有最接近第二层的阻挡层。最接近的阻挡层包括由含Si的Al x Ga 1-x-y In y N（0＆nl; x，0＆nl; y，x + y＆nlE; 1）制成的第一部分，以及设置在第一部分和第二层之间的第二部分， Al x Ga 1-x-y In y N（0＆nl E; x，0＆nl E; y，x + y＆nlE; 1）。第二部分中的Si浓度低于第一部分和远侧阻挡层中的Si浓度。

5. 发明授权

US08513687B2 Semiconductor light emitting device and semiconductor light emitting apparatus 有权
标题翻译：半导体发光器件和半导体发光器件
公开(公告)号：US08513687B2
公开(公告)日：2013-08-20
申请号：US12548939
申请日：2009-08-27
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/14 , H01L33/32 , H01L33/387 , H01L33/44 , H01L2224/05001 , H01L2224/05022 , H01L2224/05139 , H01L2224/05155 , H01L2224/05169 , H01L2224/05171 , H01L2224/05181 , H01L2224/05184 , H01L2224/05568 , H01L2224/05639 , H01L2224/05644 , H01L2224/05669 , H01L2224/13 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A semiconductor light emitting device, includes: a stacked structure unit including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode provided on a first major surface of the stacked structure unit on the second semiconductor layer side to connect to the first semiconductor layer; and a second electrode provided on the first major surface of the stacked structure unit to connect to the second semiconductor layer. The second electrode includes: a first film provided on the second semiconductor layer; and a second film provided on a rim of the first film on the second semiconductor layer. The first film has a relatively low contact resistance with the second semiconductor layer. The second film has a relatively high contact resistance with the second semiconductor layer. A distance from an outer edge of the second film to the first film is smaller at a central portion than at a peripheral portion of the first major surface.
摘要翻译：一种半导体发光器件，包括：层叠结构单元，包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层; 第一电极，设置在第二半导体层侧的层叠结构单元的第一主表面上，以连接到第一半导体层; 以及设置在层叠结构单元的第一主表面上以连接到第二半导体层的第二电极。第二电极包括：设置在第二半导体层上的第一膜; 以及设置在第二半导体层上的第一膜的边缘上的第二膜。第一膜与第二半导体层具有相对低的接触电阻。第二膜与第二半导体层具有较高的接触电阻。从第二膜的外边缘到第一膜的距离在中心部分比在第一主表面的周边部分处更小。

6. 发明授权

US08470627B2 Method for manufacturing semiconductor light emitting device 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US08470627B2
公开(公告)日：2013-06-25
申请号：US13671580
申请日：2012-11-08
申请人： Yasuo Ohba , Kei Kaneko , Toru Gotoda , Hiroshi Katsuno , Mitsuhiro Kushibe
发明人： Yasuo Ohba , Kei Kaneko , Toru Gotoda , Hiroshi Katsuno , Mitsuhiro Kushibe
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0079 , H01L33/38 , H01L33/405 , H01L2933/0016
摘要： A method for manufacturing a semiconductor light emitting device is provided. The device includes: an n-type semiconductor layer; a p-type semiconductor layer; and a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer. The method includes: forming a buffer layer made of a crystalline AlxGa1-xN (0.8≦x≦1) on a first substrate made of c-plane sapphire and forming a GaN layer on the buffer layer; stacking the n-type semiconductor layer, the light emitting unit, and the p-type semiconductor layer on the GaN layer; and separating the first substrate by irradiating the GaN layer with a laser having a wavelength shorter than a bandgap wavelength of GaN from the first substrate side through the first substrate and the buffer layer.
摘要翻译：提供一种制造半导体发光器件的方法。该器件包括：n型半导体层; p型半导体层; 以及设置在n型半导体层和p型半导体层之间的发光单元。该方法包括：在由c面蓝宝石制成的第一衬底上形成由结晶Al x Ga 1-x N（0.8 @ x @ 1）制成的缓冲层，并在缓冲层上形成GaN层; 在GaN层上堆叠n型半导体层，发光单元和p型半导体层; 以及通过第一衬底和缓冲层从第一衬底侧用具有比GaN的带隙波长短的波长的激光照射GaN层来分离第一衬底。

7. 发明申请

US20130069032A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING WAFER 有权
标题翻译：半导体发光装置，散热器，制造半导体发光装置的方法及制造方法
公开(公告)号：US20130069032A1
公开(公告)日：2013-03-21
申请号：US13406705
申请日：2012-02-28
申请人： Mitsuhiro KUSHIBE , Yasuo OHBA , Hiroshi KATSUNO , Kei KANEKO , Shinji YAMADA
发明人： Mitsuhiro KUSHIBE , Yasuo OHBA , Hiroshi KATSUNO , Kei KANEKO , Shinji YAMADA
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first layer of n-type and a second layer of p-type including a nitride semiconductor, a light emitting unit provided between the first and second layers, a first stacked structure provided between the first layer and the light emitting unit, and a second stacked structure provided between the first layer and the first stacked structure. The light emitting unit includes barrier layers and a well layer provided between the barrier layers. The first stacked structure includes third layers including a nitride semiconductor, and fourth layers stacked with the third layers and including GaInN. The fourth layers have a thinner thickness than the well layer. The second stacked structure includes fifth layers including a nitride semiconductor, and sixth layers stacked with the fifth layers and including GaInN. The sixth layers have a thinner thickness than the well layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一层n型和第二层p型，包括氮化物半导体，设置在第一和第二层之间的发光单元，第一层叠结构，第一层和发光单元，以及设置在第一层和第一堆叠结构之间的第二堆叠结构。发光单元包括阻挡层和设置在阻挡层之间的阱层。第一堆叠结构包括包括氮化物半导体的第三层和与第三层堆叠并包括GaInN的第四层。第四层具有比阱层更薄的厚度。第二堆叠结构包括包括氮化物半导体的第五层和与第五层堆叠并包括GaInN的第六层。第六层的厚度比井层薄。

8. 发明申请

US20120235168A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120235168A1
公开(公告)日：2012-09-20
申请号：US13204082
申请日：2011-08-05
申请人： Hiroshi Katsuno , Yasuo Ohba , Satoshi Mitsugi , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
发明人： Hiroshi Katsuno , Yasuo Ohba , Satoshi Mitsugi , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
IPC分类号： H01L33/40
CPC分类号： H01L33/382 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/385 , H01L2224/48091 , H01L2224/73265 , H01L2933/0091 , H01L2924/00014
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure body, first and second electrodes. The stacked structure body includes first and second semiconductor layers and a light emitting layer provided between the second and first semiconductor layers, and has first and second major surfaces. The first electrode has a first contact part coming into contact with the first semiconductor layer. The second electrode has a part coming into contact with the second semiconductor layer. A surface of the first semiconductor layer on a side of the first major surface has a first part having a part overlapping a contact surface with the first semiconductor layer and a second part having a part overlapping the second semiconductor layer. The second part has irregularity. A pitch of the irregularity is longer than a peak wavelength of emission light. The first part has smaller irregularity than the second part.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体，第一和第二电极。叠层结构体包括第一和第二半导体层以及设置在第二和第一半导体层之间的发光层，并且具有第一和第二主表面。第一电极具有与第一半导体层接触的第一接触部分。第二电极具有与第二半导体层接触的部分。第一主表面一侧的第一半导体层的表面具有第一部分，其第一部分具有与第一半导体层的接触表面重叠的部分，第二部分具有与第二半导体层重叠的部分。第二部分是不规律的。不规则的间距比发光的峰值波长长。第一部分具有比第二部分更小的不规则性。

9. 发明申请

US20120217531A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMICONDUCTOR LIGHT EMITTING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光装置，半导体发光装置及制造半导体发光装置的方法
公开(公告)号：US20120217531A1
公开(公告)日：2012-08-30
申请号：US13204021
申请日：2011-08-05
申请人： Hiroshi KATSUNO , Yasuo Ohba , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
发明人： Hiroshi KATSUNO , Yasuo Ohba , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
IPC分类号： H01L33/40 , H01L33/50
CPC分类号： H01L33/405 , H01L24/32 , H01L33/40 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2933/0016 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure body and an electrode. The stacked structure body has a first conductivity type first semiconductor layer including a nitride-based semiconductor, a second conductivity type second semiconductor layer including a nitride-based semiconductor, and a light emitting layer provided between the first and second semiconductor layers. The electrode has first, second and third metal layers. The first metal layer is provided on the second semiconductor layer and includes silver or silver alloy. The second metal layer is provided on the first metal layer and includes at least one element of platinum, palladium, rhodium, iridium, ruthenium, osmium. The third metal layer is provided on the second metal layer. A thickness of the third metal layer along a direction from the first toward the second semiconductor layer is equal to or greater than a thickness of the second metal layer.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体和电极。叠层结构体具有包括氮化物系半导体的第一导电型第一半导体层，包含氮化物系半导体的第二导电型第二半导体层和设置在第一半导体层与第二半导体层之间的发光层。电极具有第一，第二和第三金属层。第一金属层设置在第二半导体层上并且包括银或银合金。第二金属层设置在第一金属层上，并且包括铂，钯，铑，铱，钌，锇中的至少一种元素。第三金属层设置在第二金属层上。沿第一至第二半导体层的方向的第三金属层的厚度等于或大于第二金属层的厚度。

10. 发明授权

US08039830B2 Semiconductor light emitting device and wafer 有权
标题翻译：半导体发光器件和晶圆
公开(公告)号：US08039830B2
公开(公告)日：2011-10-18
申请号：US12505053
申请日：2009-07-17
申请人： Kei Kaneko , Yasuo Ohba , Hiroshi Katsuno , Mitsuhiro Kushibe
发明人： Kei Kaneko , Yasuo Ohba , Hiroshi Katsuno , Mitsuhiro Kushibe
IPC分类号： H01L29/06
CPC分类号： H01L33/0025 , H01L33/06 , H01L33/325
摘要： A semiconductor light emitting device includes a first layer made of at least one of n-type GaN and n-type AlGaN; a second layer made of Mg-containing p-type AlGaN; and a light emitting section provided between the first layer and the second layer. The light emitting section included a plurality of barrier layers made of Si-containing AlxGa1-x-yInyN (0≦x, 0≦y, x+y≦1), and a well layer provided between each pair of the plurality of barrier layers and made of GaInN or AlGaInN. The plurality of barrier layers have a nearest barrier layer and a far barrier layer. The nearest barrier layer is nearest to the second layer among the plurality of barrier layers. The nearest barrier layer includes a first portion and a second portion. The first portion is made of Si-containing AlxGa1-x-yInyN (0≦x, 0≦y, x+y≦1). The second portion is provided between the first portion and the second layer and is made of AlxGa1-x-yInyN (0≦x, 0≦y, x+y≦1). The Si concentration in the second portion is lower than a Si concentration in the first portion and lower than a Si concentration in the far barrier layer.
摘要翻译：半导体发光器件包括由n型GaN和n型AlGaN中的至少一种构成的第一层; 由含Mg的p型AlGaN制成的第二层; 以及设置在第一层和第二层之间的发光部。发光部包括由含Si的Al x Ga 1-x-y In y N（0＆nl; x，0＆nl; y，x + y＆nlE; 1）构成的多个阻挡层，以及设置在每对多个阻挡层并由GaInN或AlGaInN制成。多个阻挡层具有最近的阻挡层和远的阻挡层。最近的阻挡层最接近多个阻挡层中的第二层。最近的阻挡层包括第一部分和第二部分。第一部分由含Si的Al x Ga 1-x-y In y N（0＆nl; x，0＆nl; y，x + y＆nlE; 1）制成。第二部分设置在第一部分和第二层之间，并由Al x Ga 1-x-y In y N（0＆lt; n 1; x，0＆n 1; y，x + y和n 1; 1）制成。第二部分中的Si浓度低于第一部分中的Si浓度，并且低于远阻隔层中的Si浓度。

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