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    • 2. 发明授权
    • Method of manufacturing target of image pickup tube
    • 摄像管目标的制造方法
    • US4331506A
    • 1982-05-25
    • US212213
    • 1980-12-02
    • Akira SasanoToshio NakanoKen TsutsuiChushiro KusanoTadaaki HiraiEiichi Maruyama
    • Akira SasanoToshio NakanoKen TsutsuiChushiro KusanoTadaaki HiraiEiichi Maruyama
    • H01J9/233H01J31/46H01J31/26
    • H01J31/46H01J9/233
    • A method of manufacturing a target of an image pickup tube comprising the steps of: forming a plurality of groups of transparent conductive signal electrodes on a transparent insulating base plate; forming a first layer on at least a portion constituting an image area of the image pickup tube, said first layer being substantially insoluble in etching liquid used for etching an insulating layer to constitute an intermediate layer insulator in a double layered interconnection structure; forming, after formation of said first layer, an insulating layer to constitute said intermediate-layer insulator; removing a predetermined portion of said insulating layer, removing said first layer together with said insulating layer located thereon; forming bus bars; and forming a photoconductive layer on said plurality of groups of the transparent conductive signal electrodes.This invention provides an excellent method for mass production.
    • 一种制造图像拾取管的目标的方法,包括以下步骤:在透明绝缘基板上形成多组透明导电信号电极; 在构成图像拾取管的图像区域的至少一部分上形成第一层,所述第一层基本上不溶于用于蚀刻绝缘层的蚀刻液,以构成双层互连结构中的中间层绝缘体; 在形成所述第一层之后形成构成所述中间层绝缘体的绝缘层; 去除所述绝缘层的预定部分,与位于其上的所述绝缘层一起去除所述第一层; 形成母线; 以及在所述多个透明导电信号电极组上形成光电导层。 本发明提供了一种很好的批量生产方法。
    • 9. 发明授权
    • Photoelectric device and method of producing the same
    • 光电器件及其制造方法
    • US4394749A
    • 1983-07-19
    • US154999
    • 1980-05-30
    • Toshihisa TsukadaYukio TakasakiTadaaki HiraiToru BajiHideaki YamamotoYasuo TanakaEiichi MaruyamaSachio Ishioka
    • Toshihisa TsukadaYukio TakasakiTadaaki HiraiToru BajiHideaki YamamotoYasuo TanakaEiichi MaruyamaSachio Ishioka
    • H01L27/146G11C13/00
    • H01L27/14665
    • A photoelectric device having at least a predetermined impurity region which is disposed in a semiconductor substrate, and a photoelectric conversion portion which is constructed by stacking an electrode layer lying in contact with at least a part of the impurity region, a photoconductive material layer overlying the electrode layer, and a transparent electrode overlying the photoconductive material layer, characterized in that the photoconductive material layer is made of an amorphous chalcogenide material which principally contains Se, is disclosed. It is very favorable that the photoelectric conversion material layer made of the amorphous material principally containing Se is partially doped with Te so as to enhance its sensitivity. The amorphous chalcogenide material is very useful in the following point. In the course of forming, or after having formed, at least one photoconductive layer on a semiconductor body whose surface is uneven, a heat treatment is performed at a temperature of at least the softening point of the photoconductor so as to flatten the layer, whereby discontinuous parts of the photoconductor ascribable to the uneven surface of the semiconductor body can be avoided.
    • 具有至少设置在半导体衬底中的预定杂质区域的光电器件和通过堆叠与至少一部分杂质区域接触的电极层构成的光电转换部分,覆盖 电极层和覆盖光导材料层的透明电极,其特征在于,所述光导材料层由主要包含Se的无定形硫族化物材料制成。 非常有利的是,由主要含有Se的非晶体材料制成的光电转换材料层部分地掺杂有Te以提高其灵敏度。 无定形硫族化物材料在以下方面非常有用。 在形成表面不均匀的半导体本体上形成或形成至少一个光电导层的过程中,至少在光电导体的软化点的温度下进行热处理以使层平坦化,由此 可以避免归因于半导体本体的不平坦表面的感光体的不连续部分。
    • 10. 发明授权
    • Photoconductive films
    • 光导膜
    • US4040985A
    • 1977-08-09
    • US674086
    • 1976-04-06
    • Keiichi ShidaraNaohiro GotoEiichi MaruyamaTadaaki HiraiTsutomu Fujita
    • Keiichi ShidaraNaohiro GotoEiichi MaruyamaTadaaki HiraiTsutomu Fujita
    • H01J29/45H01L31/0248H01L31/00
    • H01J29/456Y10T428/31678
    • A photoconductive film comprises a first region containing Se in which Te and an element capable of forming deep levels in Se are added at concentrations lower than 10 atomic % inclusive on average, respectively, a second region disposed on the first region and containing Se in which Te is added with a continuous distribution of concentration having a peak value greater than 15 atomic % inclusive, a third region disposed on the second region and containing Se in which an element capable of forming deep levels in Se is added with a continuous distribution of concentration having a peak value greater than 15 atomic % inclusive, and a fourth region disposed on the third region and containing Se in which Te and an element capable of forming deep levels in Se are added at concentrations lower than 10 atomic % inclusive on average, respectively.
    • 光电导膜包括含有Se的第一区域,其中Te和能够形成Se的深度水平的元素分别平均加入低于10原子%的平均值,第二区域设置在第一区域上并包含Se,其中 加入具有峰值大于15原子%的浓度的连续分布的浓度,第三区域设置在第二区域上,并且包含Se,其中能够形成Se中的深层次的元素具有连续的浓度分布 具有大于15原子%的峰值的第一区域,以及设置在第三区域上并且含有Se的Se的第四区域,其中Te和Se中能够形成深度水平的元素分别以低于10原子% 。