专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5101255A Amorphous photoelectric conversion device with avalanche 失效
标题翻译：具有雪崩的非晶体光电转换装置
公开(公告)号：US5101255A
公开(公告)日：1992-03-31
申请号：US384080
申请日：1989-07-24
申请人： Sachio Ishioka , Yukio Takasaki , Tadaaki Hirai , Kazutaka Tsuji , Tatsuo Makishima , Yasuhiko Nonaka , Tatsuro Kawamura , Takashi Yamashita , Kazuhisa Taketoshi , Keiichi Shidara , Fumihiko Ando , Kenkichi Tanioka
发明人： Sachio Ishioka , Yukio Takasaki , Tadaaki Hirai , Kazutaka Tsuji , Tatsuo Makishima , Yasuhiko Nonaka , Tatsuro Kawamura , Takashi Yamashita , Kazuhisa Taketoshi , Keiichi Shidara , Fumihiko Ando , Kenkichi Tanioka
IPC分类号： H01L31/0272 , H01L31/09
CPC分类号： H01L31/0272 , H01L31/095
摘要： Disclosed is a photoelectric conversion device which comprises: a photoconductive layer made of amorphous semiconductor material which shows charge multiplication and which converts photo signals into electric signals; and a substrate having electric circuits or the like (for example switching elements) for reading the electric signals. The amorphous semiconductor material used according to the invention shows the charge multiplication action under predetermined intensity of electric field so that a high sensitive photoelectric conversion device having a gain which is not smaller than 1 is realized.
摘要翻译：公开了一种光电转换装置，其包括：由非晶半导体材料制成的光电导层，其显示电荷倍增，并将光信号转换为电信号; 以及具有用于读取电信号的电路等的基板（例如开关元件）。根据本发明使用的非晶半导体材料在预定的电场强度下显示充电倍增动作，从而实现具有不小于1的增益的高灵敏度光电转换装置。

2. 发明授权

US06564987B2 Method, apparatus and computer readable medium for evaluating configuration of solder external terminals of a semiconductor device 有权
公开(公告)号：US06564987B2
公开(公告)日：2003-05-20
申请号：US09811573
申请日：2001-03-20
申请人： Kanako Imai , Nobutaka Ito , Fumihiko Ando
发明人： Kanako Imai , Nobutaka Ito , Fumihiko Ando
IPC分类号： B23K3112
CPC分类号： B23K3/0623 , B23K2101/40 , H01L2224/11334 , H01L2224/16237 , H01L2224/48091 , H01L2224/48227 , H01L2924/15311 , H05K3/3436 , H05K2201/0394 , H05K2201/09472 , H05K2203/163 , Y02P70/613 , H01L2924/00014
摘要： A method of evaluating configuration of solder external terminals of a BGA-type tape-based semiconductor device mounted on a board such that the external terminals are joined to lands provided on the mounting board is provided. The method includes the step of obtaining geometric data related to opening of a tape substrate of the semiconductor device, solder balls to be placed at positions corresponding to the openings, and the lands of the mounting board and the step of deribing configuration of the solder external terminal based on the geometric date. The method further includes the step of calculating the volume of voids to be produced in the external terminals, so as to compensate for the geometric data related to the tape substrate.

3. 发明授权

US4363963A Solid state photo-electric converting device and solid state imaging apparatus employing it 失效
标题翻译：固态光电转换装置和使用它的固态成像装置
公开(公告)号：US4363963A
公开(公告)日：1982-12-14
申请号：US124697
申请日：1980-02-26
申请人： Fumihiko Ando
发明人： Fumihiko Ando
IPC分类号： H01L27/146 , H01L31/113 , H04N5/335 , H04N5/369 , H04N5/374 , H04N5/378 , H01J40/14
CPC分类号： H01L31/1136 , H01L27/14665 , H01L27/14681
摘要： A solid state photo-electric converting device consists of a direct conjunction of a photo-electric converting layers formed of satisfactorily selected materials and a solid state amplifier formed, for instance, of an FET, a conductive electrode being inserted therebetween for collecting signal charges induced in those converting layers efficiently, thereby an excellent spectral sensitivity performance and an extremely high conversion efficiency being realizabe. Accordingly, a solid state imaging apparatus employing a matrix of the above converting devices can be provided with an excellent spectral and noiseless performance.
摘要翻译：固态光电转换装置由由令人满意的材料形成的光电转换层和例如由FET形成的固态放大器的直接连接构成，导电电极插入其间用于收集信号电荷在这些转换层中，由此具有优异的光谱灵敏度性能和非常高的转换效率。因此，使用上述转换装置的矩阵的固态成像装置可以具有优异的光谱和无噪声性能。

4. 发明授权

US06621169B2 Stacked semiconductor device and method of producing the same 有权
公开(公告)号：US06621169B2
公开(公告)日：2003-09-16
申请号：US09940625
申请日：2001-08-29
申请人： Katsuhito Kikuma , Mitsutaka Ikeda , Yoshihiro Tsukidate , Yuji Akashi , Kaname Ozawa , Akira Takashima , Tadashi Uno , Takao Nishimura , Fumihiko Ando , Hiroshi Onodera , Hayato Okuda
发明人： Katsuhito Kikuma , Mitsutaka Ikeda , Yoshihiro Tsukidate , Yuji Akashi , Kaname Ozawa , Akira Takashima , Tadashi Uno , Takao Nishimura , Fumihiko Ando , Hiroshi Onodera , Hayato Okuda
IPC分类号： H01L2358
CPC分类号： H01L25/0652 , H01L23/3121 , H01L24/48 , H01L24/49 , H01L25/0657 , H01L2224/05554 , H01L2224/05571 , H01L2224/05573 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48225 , H01L2224/48227 , H01L2224/48465 , H01L2224/49113 , H01L2224/49175 , H01L2224/73204 , H01L2224/73207 , H01L2224/73265 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/0652 , H01L2225/06527 , H01L2225/06555 , H01L2225/06562 , H01L2225/06568 , H01L2225/06572 , H01L2225/06582 , H01L2225/06586 , H01L2225/06596 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01058 , H01L2924/014 , H01L2924/10162 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19107 , H01L2924/00 , H01L2224/45099 , H01L2224/05599 , H01L2924/00012
摘要： In a stacked semiconductor device which has a plurality of semiconductor chips of desired sizes stacked as one package, a first semiconductor chip is mounted on a flexible printed wiring board provided with external connecting terminals. A printed circuit board is placed and mounted on the first semiconductor chip by flip-chip bonding. A second semiconductor chip is secured onto the printed circuit board. The second semiconductor chip is connected to the flexible printed wiring board by wire bonding. The first semiconductor chip is connected to the flexible printed wiring board by wire bonding via the printed circuit board.

5. 发明授权

US06388333B1 Semiconductor device having protruding electrodes higher than a sealed portion 有权
标题翻译：具有比密封部分高的突出电极的半导体器件
公开(公告)号：US06388333B1
公开(公告)日：2002-05-14
申请号：US09605687
申请日：2000-06-27
申请人： Fumihiko Taniguchi , Kouhei Orikawa , Tadashi Uno , Fumihiko Ando , Akira Takashima , Hiroshi Onodera , Eiji Yoshida , Kazuo Teshirogi
发明人： Fumihiko Taniguchi , Kouhei Orikawa , Tadashi Uno , Fumihiko Ando , Akira Takashima , Hiroshi Onodera , Eiji Yoshida , Kazuo Teshirogi
IPC分类号： H01L2940
CPC分类号： H01L25/50 , H01L23/49816 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/0657 , H01L25/105 , H01L2224/05001 , H01L2224/05023 , H01L2224/05548 , H01L2224/16225 , H01L2224/16237 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/0652 , H01L2225/06541 , H01L2225/06555 , H01L2225/06582 , H01L2225/06586 , H01L2225/06593 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/181 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2224/05599 , H01L2224/05099 , H01L2224/45015 , H01L2924/207
摘要： A plurality of semiconductor devices can be mounted on a mounting board in a three-dimensional structure by stacking one on another with a simple structure. A semiconductor element is mounted on a first surface of an interposer. Electrode pads connected to the semiconductor element are arranged around the semiconductor element on the first surface of the interposer. Protruding electrodes are provided on the respective electrode pads. Through holes are formed in the interposer so as to extend from a second surface opposite to the first surface of the redistribution substrate to the respective electrode pads. The semiconductor element is encapsulated by a seal resin. Each of the protruding electrodes is higher than the sealed portion of the semiconductor element.
摘要翻译：多个半导体器件可以通过以简单的结构彼此堆叠而以三维结构安装在安装板上。半导体元件安装在插入件的第一表面上。连接到半导体元件的电极焊盘围绕该中介层的第一表面上的半导体元件布置。突出电极设置在相应的电极焊盘上。在插入器中形成通孔，从与再分布基板的第一表面相反的第二表面延伸到相应的电极焊盘。半导体元件由密封树脂封装。每个突出电极比半导体元件的密封部分高。

6. 发明授权

US06281571B1 Semiconductor device having an external connection electrode extending through a through hole formed in a substrate 有权
标题翻译：半导体器件具有延伸穿过形成在衬底中的通孔的外部连接电极
公开(公告)号：US06281571B1
公开(公告)日：2001-08-28
申请号：US09537803
申请日：2000-03-24
申请人： Akira Takashima , Fumihiko Ando , Mitsuru Sato , Takashi Suzuki , Yoshikazu Kumagaya , Kazunari Kosakai
发明人： Akira Takashima , Fumihiko Ando , Mitsuru Sato , Takashi Suzuki , Yoshikazu Kumagaya , Kazunari Kosakai
IPC分类号： H01L2304
CPC分类号： H01L24/83 , H01L23/49816 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L2224/05599 , H01L2224/16225 , H01L2224/16237 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/29198 , H01L2224/2929 , H01L2224/29386 , H01L2224/32057 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/83138 , H01L2224/83192 , H01L2224/83385 , H01L2224/8385 , H01L2224/85444 , H01L2224/8547 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01009 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H01L2924/15311 , H01L2924/181 , H01L2924/351 , H05K3/3436 , H05K2201/0367 , H05K2201/0394 , Y02P70/613 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2924/05442 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： External connection electrodes can be positively mounted on a substrate when the pitch between the external connection electrodes is reduced and the diameter of each through hole formed in the substrate is reduced. A semiconductor chip is mounted on a first surface of a tape substrate. Electrode films are formed on the first surface of the tape substrate, each of the electrode films electrically connected to the semiconductor chip. External connection electrodes are provided on a second surface of the tape substrate, each of the external connection electrodes connected to a respective one of the electrode films via a through hole formed in the tape substrate. The external connection electrodes are formed on the electrode films by plating. A diameter S1 of a portion of each of the external connection electrodes protruding from the second surface of the tape substrate and a diameter S2 of the through hole satisfy a relationship S1≦S2.
摘要翻译：当外部连接电极之间的间距减小并且形成在基板中的每个通孔的直径减小时，可以将外部连接电极牢固地安装在基板上。半导体芯片安装在带基板的第一表面上。在带基板的第一表面上形成电极膜，每个电极膜与半导体芯片电连接。外部连接电极设置在带基板的第二表面上，每个外部连接电极通过形成在带基板中的通孔连接到相应的一个电极膜。外部连接电极通过电镀形成在电极膜上。每个外部连接电极的从带基板的第二表面突出的部分的直径S1和通孔的直径S2满足关系S1 <= S2。

7. 发明授权

US4710817A Solid state image sensor 失效
标题翻译：固态图像传感器
公开(公告)号：US4710817A
公开(公告)日：1987-12-01
申请号：US900139
申请日：1986-08-25
申请人： Fumihiko Ando
发明人： Fumihiko Ando
IPC分类号： H04N5/335 , H04N5/357 , H04N5/374 , H04N5/3745 , H04N5/378 , H04N5/14
CPC分类号： H04N5/378 , H04N5/357 , H04N5/374
摘要： A solid state image sensor comprising a plurality of photosensors (8A) including a plurality of avalanche photodiodes (12A) arranged at least in the form of a one-dimensional array and delivering pulse signals each representing the number of photons incident to each of the photosensors; counters (10A) connected to the respective photosensors (8A) to count the pulse signals and hold the count value as a video output; a reset circuit (5) for resetting the counters (10A) to the initial states at a predetermined frequency; and a scanning circuit (14) for sequentially reading out the count value in the counters (10A). The counter (10A) counts the number of photons subjected to photoelectric conversion by the photodiode (12A) so that the video signal is directly derived in the form of a digital signal and thus the video signal with a high S/N ratio is obtained.
摘要翻译： PCT No.PCT / JP85 / 00710 Sec。一九八六年八月二十五日 102（e）日期1986年8月25日PCT 1985年12月25日PCT PCT。出版物WO86 / 03918 日期：1986年7月3日。一种固态图像传感器，包括多个光电传感器（8A），其包括至少以一维阵列的形式布置的多个雪崩光电二极管（12A），并且传送各自代表每个光电传感器发生光子事件; 连接到各个光电传感器（8A）的计数器（10A），以对脉冲信号进行计数，并将计数值保持为视频输出; 用于将计数器（10A）以预定频率复位到初始状态的复位电路（5）以及用于顺序读出计数器（10A）中的计数值的扫描电路（14）。计数器（10A）对通过光电二极管（12A）进行光电转换的光子数进行计数，从而以数字信号的形式直接导出视频信号，从而获得具有高S / N比的视频信号。

8. 发明授权

US4525742A Two-dimensional solid-state image sensor device 失效
标题翻译：二维固态图像传感器装置
公开(公告)号：US4525742A
公开(公告)日：1985-06-25
申请号：US579643
申请日：1984-02-13
申请人： Junichi Nishizawa , Takashige Tamamushi , Fumihiko Ando , Shigeo Yoshikawa , Koji Shimanuki
发明人： Junichi Nishizawa , Takashige Tamamushi , Fumihiko Ando , Shigeo Yoshikawa , Koji Shimanuki
IPC分类号： H01L27/146 , H01L31/112 , H04N5/30 , H04N5/335
CPC分类号： H04N5/30 , H01L27/14679 , H01L31/1126
摘要： A two-dimensional solid-state image sensor device comprising a plurality of picture cells two-dimensionally arranged in column and row directions. Each cell has a static induction transistor having drain and source regions disposed on opposite sides of a high resistance semiconductor channel region, and a gate region adjacent to the channel region to control a current flowing between the drain and source regions, and a transparent electrode disposed via a capacitance on at least a portion of the gate region, in a manner that light is incident through the transparent electrode to the gate region in which the charge produced by the light excitation is stored to control the current. Selection lines connected to the gate regions in each column in common via the capacitances are sequentially selected. A readout pulse voltage is applied to the selected selection line during one horizontal scanning period and a refresh pulse voltage larger than the readout pulse voltage is applied to the selected selection line during one horizontal blanking period subsequent to the horizontal scanning period. Each picture cell is selected in the column and row directions so that a signal is read out therefrom.
摘要翻译：一种二维固态图像传感器装置，其包括在列和行方向上二维布置的多个图像单元。每个单元具有静电感应晶体管，其具有布置在高电阻半导体沟道区域的相对侧上的漏极和源极区域以及与沟道区域相邻的栅极区域，以控制在漏极和源极区域之间流动的电流，以及布置的透明电极通过在栅极区域的至少一部分上的电容以光通过透明电极入射到存储由光激发产生的电荷的栅极区域以控制电流的方式。依次选择通过电容公共地连接到各列中的栅极区域的选择线。在一个水平扫描周期期间，对所选择的选择线施加读出脉冲电压，并且在水平扫描周期之后的一个水平消隐期间，将大于读出脉冲电压的刷新脉冲电压施加到所选择的选择线。在列和行方向上选择每个图像单元，从而从其读出信号。

9. 发明授权

US06528348B2 Semiconductor device having protruding electrodes higher than a sealed portion 有权
公开(公告)号：US06528348B2
公开(公告)日：2003-03-04
申请号：US10076580
申请日：2002-02-19
申请人： Fumihiko Ando , Akira Takashima , Hiroshi Onodera , Eiji Yoshida , Kazuo Teshirogi
发明人： Fumihiko Ando , Akira Takashima , Hiroshi Onodera , Eiji Yoshida , Kazuo Teshirogi
IPC分类号： H01L2940
CPC分类号： H01L25/50 , H01L23/49816 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/0657 , H01L25/105 , H01L2224/05001 , H01L2224/05023 , H01L2224/05548 , H01L2224/16225 , H01L2224/16237 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/0652 , H01L2225/06541 , H01L2225/06555 , H01L2225/06582 , H01L2225/06586 , H01L2225/06593 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/181 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2224/05599 , H01L2224/05099 , H01L2224/45015 , H01L2924/207
摘要： A plurality of semiconductor devices can be mounted on a mounting board in a three-dimensional structure by stacking one on another with a simple structure. A semiconductor element is mounted on a first surface of an interposer. Electrode pads connected to the semiconductor element are arranged around the semiconductor element on the first surface of the interposer. Protruding electrodes are provided on the respective electrode pads. Through holes are formed in the interposer so as to extend from a second surface opposite to the first surface of the redistribution substrate to the respective electrode pads. The semiconductor element is encapsulated by a seal resin. Each of the protruding electrodes is higher than the sealed portion of the semiconductor element.

10. 发明授权

US4839729A Solid state image sensor 失效
标题翻译：固态图像传感器
公开(公告)号：US4839729A
公开(公告)日：1989-06-13
申请号：US186225
申请日：1988-04-26
申请人： Fumihiko Ando , Junji Kumada , Yoshihiro Fujita , Hidetoshi Yamada , Kazuhiko Nakamura
发明人： Fumihiko Ando , Junji Kumada , Yoshihiro Fujita , Hidetoshi Yamada , Kazuhiko Nakamura
IPC分类号： H04N5/217 , H04N5/335 , H04N5/341 , H04N5/361 , H04N5/365 , H04N5/369 , H04N5/3745 , H04N5/378
CPC分类号： H04N5/365 , H04N5/361 , H04N5/37213
摘要： A solid state image sensor including a light receiving section having a number of light receiving cells arranged in matrix, and a reading and storing section having a first set of switching and memory transistors for reading bright signals read out of light receiving cells arranged in a row and storing the same for a horizontal scanning period, a second set of switching and memory transistors for reading dark signals out of light receiving cells arranged in a row and storing the same for a horizontal scanning period, and a set of reading transistors for reading the bright and dark signals simultaneously out of the first and second sets of memory transistors for respective pixels successively. The light receiving section and the reading and storing section are formed integrally in the same semiconductor substrate. In order to remove the fixed pattern noise, there is derived differences between the simultaneously readout bright and dark signals with the aid of a differential amplifier.
摘要翻译：一种固态图像传感器，包括具有以矩阵形式布置的多个光接收单元的光接收部分，以及读取和存储部分，其具有第一组开关和存储晶体管，用于读出从布置在一行中的光接收单元读出的亮信号并且将其存储在水平扫描周期中，第二组开关和存储晶体管用于从排列在行中的光接收单元读出暗信号并将其存储在水平扫描周期中;以及一组读取晶体管，用于读取相应的像素的第一组和第二组存储晶体管的同时亮度和暗信号。光接收部分和读取和存储部分一体地形成在同一半导体衬底中。为了消除固定模式噪声，借助于差分放大器，导致同时读出的明暗信号之间的差异。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式