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1. 发明授权

US10144849B2 Polishing composition and polishing method using the same 有权
公开(公告)号：US10144849B2
公开(公告)日：2018-12-04
申请号：US12864811
申请日：2009-01-29
申请人： Takahiro Mizuno , Yoshihiro Izawa , Tomohiko Akatsuka
发明人： Takahiro Mizuno , Yoshihiro Izawa , Tomohiko Akatsuka
IPC分类号： C09G1/02 , H01L21/02 , H01L21/3105 , H01L21/321 , C09K3/14
摘要： A polishing composition contains a nitrogen-containing compound and abrasive grains, and the pH of the composition is in the range of 1 to 7. The nitrogen-containing compound in the polishing composition preferably has a structure expressed by a formula: R1—N(—R2)—R3 in which R1, R2, and R3 each represent an alkyl group with or without a characteristic group, two of R1 to R3 may form a part of a heterocycle, and two of R1 to R3 may be identical and form a part of a heterocycle with the remaining one. Alternatively, the nitrogen-containing compound is preferably selected from a group consisting of a carboxybetaine type ampholytic surfactant, a sulfobetaine type ampholytic surfactant, an imidazoline type ampholytic surfactant, and an amine oxide type ampholytic surfactant. A polishing composition may contain a water-soluble polymer and abrasive grains, and the pH of the composition is in the range of 1 to 8.

2. 发明授权

US08703007B2 Polishing composition and polishing method using the same 有权
标题翻译：抛光组合物和抛光方法使用相同
公开(公告)号：US08703007B2
公开(公告)日：2014-04-22
申请号：US13010033
申请日：2011-01-20
申请人： Tomohiko Akatsuka , Yasuto Ishida , Kanako Fukuda , Yoshihiro Kachi , Hisanori Tansho
发明人： Tomohiko Akatsuka , Yasuto Ishida , Kanako Fukuda , Yoshihiro Kachi , Hisanori Tansho
IPC分类号： C09K13/00 , B44C1/22
CPC分类号： C09G1/02 , C09G1/04 , H01L21/3212
摘要： A polishing composition of the present invention contains an oxidant, an anticorrosive, and a surfactant comprising a compound represented by Chemical Formula 1: One to three of R1 to R5 in Chemical Formula 1 are alkyl groups, alkynyl groups, alkenyl groups, aryl groups, or arylalkylene groups, one is a hydrogen atom or an alkyl group having 1 to 9 carbon atoms, and the remainder are hydrogen atoms. O—R6 is oxyethylene, oxypropylene, or a random or block conjugate of oxyethylene and oxypropylene. n is an integer of 1 or more. X is an OSO3− group, an OPO32− group, or an OH group.
摘要翻译：本发明的研磨用组合物含有氧化剂，防腐蚀剂和含有化学式1表示的化合物的表面活性剂：化学式1中的1〜3个R 1〜R 5为烷基，炔基，烯基，芳基，或芳基亚烷基，一个是氢原子或具有1至9个碳原子的烷基，其余是氢原子。 O-R6是氧化乙烯，氧丙烯或氧化乙烯和氧丙烯的无规或嵌段共轭物。 n为1以上的整数。 X是OSO3-基团，OPO32-基团或OH基团。

3. 发明申请

US20090197413A1 Polishing Composition and Polishing Method Using The Same 有权
标题翻译：抛光组合和抛光方法使用它
公开(公告)号：US20090197413A1
公开(公告)日：2009-08-06
申请号：US12362991
申请日：2009-01-30
申请人： Mikikazu SHIMIZU , Tomohiko AKATSUKA , Kazuya SUMITA
发明人： Mikikazu SHIMIZU , Tomohiko AKATSUKA , Kazuya SUMITA
IPC分类号： C09G1/14 , C09G1/02 , H01L21/304
CPC分类号： H01L21/3212 , C09G1/02
摘要： The present invention provides a polishing composition that can be suitably used in polishing of polysilicon, and a polishing method using the polishing composition. The polishing composition contains abrasive grains and an anionic surfactant having a monooxyethylene group or a polyoxyethylene group and has a pH of 9 to 12. If the anionic surfactant contained in the polishing composition has a polyoxyethylene group, the number of repeating oxyethylene units in the polyoxyethylene group is preferably 2 to 8. The anionic surfactant contained in the polishing composition can be an anionic surfactant that has a phosphate group, a carboxy group, or a sulfo group as well as a monooxyethylene group or a polyoxyethylene group. The content of the anionic surfactant in the polishing composition is preferably 20 to 500 ppm.
摘要翻译：本发明提供了可以适用于多晶硅研磨的抛光组合物和使用该抛光组合物的研磨方法。抛光组合物含有磨粒和具有单氧乙烯基或聚氧乙烯基的阴离子表面活性剂，其pH为9〜12。如果研磨用组合物中含有的阴离子表面活性剂具有聚氧乙烯基，则聚氧乙烯基团优选为2〜8。抛光组合物中所含的阴离子表面活性剂可以是具有磷酸基，羧基或磺基以及单氧乙烯基或聚氧乙烯基的阴离子表面活性剂。抛光组合物中阴离子表面活性剂的含量优选为20〜500ppm。

4. 发明申请

US20060000808A1 Polishing solution of metal and chemical mechanical polishing method 审中-公开
标题翻译：金属抛光液和化学机械抛光方法
公开(公告)号：US20060000808A1
公开(公告)日：2006-01-05
申请号：US11169577
申请日：2005-06-30
申请人： Hiroyuki Seki , Naoki Asanuma , Takatoshi Ishikawa , Katsuhiro Yamashita , Tomohiko Akatsuka
发明人： Hiroyuki Seki , Naoki Asanuma , Takatoshi Ishikawa , Katsuhiro Yamashita , Tomohiko Akatsuka
IPC分类号： B44C1/22 , C09K13/00
CPC分类号： H01L21/3212 , C09G1/04
摘要： A polishing solution for metal comprises a specific compound represented and an oxidizing agent. A chemical mechanical polishing method for a semiconductor substrate, comprises: supplying a polishing solution for metal comprising a specific compound; and an oxidizing agent; allowing a polishing face and a face to be polished to be moved relatively to each other while the polishing face and the face to be polished are in contact with each other via the polishing solution for metal; and performing polishing with a contact pressure between the polishing face and the face to be polished in the range of from 1000 to 25000 Pa.
摘要翻译：金属的研磨液包含特定的化合物和氧化剂。一种用于半导体衬底的化学机械抛光方法，包括：为包含特定化合物的金属提供抛光溶液; 和氧化剂; 使抛光面和被抛光面相对移动，同时抛光面和被研磨面通过金属用研磨液相互接触; 并且在抛光面和被研磨面之间的接触压力在1000〜25000Pa的范围内进行研磨。

5. 发明申请

US20050054267A1 Polishing method 审中-公开
标题翻译：抛光方法
公开(公告)号：US20050054267A1
公开(公告)日：2005-03-10
申请号：US10958248
申请日：2004-10-06
申请人： Yutaka Wada , Tomohiko Akatsuka , Tatsuya Sasaki
发明人： Yutaka Wada , Tomohiko Akatsuka , Tatsuya Sasaki
IPC分类号： B24B7/22 , B24B53/007 , B24B53/095 , H01L21/3105 , B24B49/00
CPC分类号： B24B53/017 , B24B7/228 , B24B53/095 , H01L21/31053
摘要： A wafer is pressed against a fixed abrasive and brought into sliding contact with the fixed abrasive. Thus, the wafer is polished. A surface of the fixed abrasive is dressed so as to generate free abrasive particles thereon. A liquid or a gas, composed of a mixture of liquid or inert gas and pure water or chemical liquid, is ejected onto the surface of the fixed abrasive during or after the dressing process.
摘要翻译：将晶片压靠固定的磨料并与固定的磨料滑动接触。因此，晶片被抛光。修整固定磨料的表面以在其上产生游离的磨料颗粒。由液体或惰性气体与纯水或化学液体的混合物组成的液体或气体在修整过程中或之后被喷射到固定磨料的表面上。

6. 发明申请

US20110180511A1 Polishing Composition and Polishing Method Using the Same 有权
标题翻译：抛光组合物和使用其的抛光方法
公开(公告)号：US20110180511A1
公开(公告)日：2011-07-28
申请号：US13010033
申请日：2011-01-20
申请人： Tomohiko AKATSUKA , Yasuto ISHIDA , Kanako FUKUDA , Yoshihiro KACHI , Hisanori TANSHO
发明人： Tomohiko AKATSUKA , Yasuto ISHIDA , Kanako FUKUDA , Yoshihiro KACHI , Hisanori TANSHO
IPC分类号： C09K13/00 , C23F1/00
CPC分类号： C09G1/02 , C09G1/04 , H01L21/3212
摘要： A polishing composition of the present invention contains an oxidant, an anticorrosive, and a surfactant comprising a compound represented by Chemical Formula 1: One to three of R1 to R5 in Chemical Formula 1 are alkyl groups, alkynyl groups, alkenyl groups, aryl groups, or arylalkylene groups, one is a hydrogen atom or an alkyl group having 1 to 9 carbon atoms, and the remainder are hydrogen atoms. O—R6 is oxyethylene, oxypropylene, or a random or block conjugate of oxyethylene and oxypropylene. n is an integer of 1 or more. X is an OSO3− group, an OPO32− group, or an OH group.
摘要翻译：本发明的研磨用组合物含有氧化剂，防腐蚀剂和含有化学式1表示的化合物的表面活性剂：化学式1中的1〜3个R 1〜R 5为烷基，炔基，烯基，芳基，或芳基亚烷基，一个是氢原子或具有1至9个碳原子的烷基，其余是氢原子。 O-R6是氧化乙烯，氧丙烯或氧化乙烯和氧丙烯的无规或嵌段共轭物。 n为1以上的整数。 X是OSO3-基团，OPO32-基团或OH基团。

7. 发明申请

US20060216936A1 Chemical and mechanical polishing method and polishing liquid using therefor 审中-公开
标题翻译：化学和机械抛光方法和抛光液使用
公开(公告)号：US20060216936A1
公开(公告)日：2006-09-28
申请号：US11386790
申请日：2006-03-23
申请人： Tomohiko Akatsuka
发明人： Tomohiko Akatsuka
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02
摘要： A polishing method comprising chemically and mechanically polishing a surface to be polished, the polishing comprising a plurality of steps, wherein the surface is polished with a polishing liquid containing an oxidant in each of the plurality of steps, and the polishing liquids used for the each of the steps are different only in a concentration of the oxidant and satisfy the following expression (1): Rn-1>Rn (1), wherein Rn represents a polishing rate of the surface to be polished in nth step, Rn-1 represents a polishing rate of the surface to be polished in n−1th step, and n represents an integer of 2 or more.
摘要翻译：一种抛光方法，包括对要抛光的表面进行化学和机械抛光，所述抛光包括多个步骤，其中所述表面用在多个步骤中的每个步骤中含有氧化剂的抛光液体抛光，并且用于每个步骤的抛光液体的步骤仅在氧化剂的浓度上是不同的，并且满足以下表达式（1）：R 1 n-1（R 1）其中R _{n 表示在第n步骤中要抛光的表面的抛光速率，R n-1表示待抛光表面的抛光速率 n-1 步骤，n表示2以上的整数。}

8. 发明申请

US20060115973A1 Metal polishing composition and method of polishing using the same 失效
公开(公告)号：US20060115973A1
公开(公告)日：2006-06-01
申请号：US11287386
申请日：2005-11-28
申请人： Hiroyuki Seki , Katsuhiro Yamashita , Tomohiko Akatsuka , Tadashi Inaba
发明人： Hiroyuki Seki , Katsuhiro Yamashita , Tomohiko Akatsuka , Tadashi Inaba
IPC分类号： H01L21/44
CPC分类号： C09G1/02 , H01L21/3212
摘要： A metal polishing composition comprising at least one of the compound represented by formula (1) defined herein and the compound represented by formula (2) defined herein, and an oxidizing agent, and a chemical mechanical polishing method comprising bringing the metal polishing composition into contact with a surface to be polished and providing a relative movement between the surface to be polished and a polishing surface.

9. 发明授权

US06969305B2 Polishing apparatus 有权
标题翻译：抛光设备
公开(公告)号：US06969305B2
公开(公告)日：2005-11-29
申请号：US10357473
申请日：2003-02-04
申请人： Norio Kimura , Tadakazu Sone , Tomohiko Akatsuka , Tatsuya Sasaki
发明人： Norio Kimura , Tadakazu Sone , Tomohiko Akatsuka , Tatsuya Sasaki
IPC分类号： B24B49/16 , B24B53/007 , B24B53/017 , B24B1/00
CPC分类号： B24B53/017 , B24B49/16
摘要： A polishing apparatus for polishing a substrate comprises a turntable having a polishing surface, a substrate holder for holding a substrate and bringing the substrate into contact under pressure with the polishing surface, a dresser including a dresser tool adapted to be brought into contact under a pressure with the polishing surface to dress or condition the polishing surface and a pressure device connected to the dresser for moving the dresser between a raised position where the dresser is spaced away from the polishing surface and a dressing position where the dresser rests on the polishing surface such that the dresser tool is in contact with the polishing surface under a pressure exerted by the weight of the dresser itself, the dresser comprising a follow-up mechanism allowing each one of dressing element to move up and down relative to a flange portion so as to follow a contour of the polishing surface of the turntable.
摘要翻译：用于抛光衬底的抛光装置包括具有抛光表面的转盘，用于保持衬底并使衬底在压力下与抛光表面接触的衬底保持器，包括修整器工具的修整器，其适于在压力下接触抛光表面用于打磨或调理抛光表面，以及连接到修整器的压力装置，用于在修整器与抛光表面间隔开的升高位置和修整器搁置在抛光表面上的修整位置之间移动修整器，修整器工具在由修整器本身的重量施加的压力下与抛光表面接触，该修整器包括随动装置，其允许每个修整元件相对于凸缘部分上下移动，以便遵循转盘抛光表面的轮廓。

10. 发明申请

US20140094033A1 POLISHING COMPOSITION 有权
标题翻译：抛光组合物
公开(公告)号：US20140094033A1
公开(公告)日：2014-04-03
申请号：US14123889
申请日：2012-05-31
申请人： Yasuyuki Yamato , Youhei Takahashi , Tomohiko Akatsuka
发明人： Yasuyuki Yamato , Youhei Takahashi , Tomohiko Akatsuka
IPC分类号： H01L21/306 , C09G1/02
CPC分类号： H01L21/30625 , C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/31053 , H01L21/3212
摘要： A polishing composition of the present invention contains a water-soluble polymer having a hydrophilic group, and abrasive grains. A hydrophobic silicon-containing part after being polished with the polishing composition has a water contact angle lower than that of the hydrophobic silicon-containing part after being polished with another composition having the same makeup as the polishing composition except that the water-soluble polymer is not contained therein. Examples of the water-soluble polymer include polysaccharides and alcohol compounds. Another polishing composition of the present invention contains abrasive grains having a silanol group, and a water-soluble polymer. When this polishing composition is left to stand for one day in an environment at a temperature of 25° C., the water-soluble polymer is adsorbed on the abrasive grains at 5,000 or more molecules per 1 μm2 of surface area of the abrasive grains. Examples of this water-soluble polymer include nonionic compounds having a polyoxyalkylene chain.
摘要翻译：本发明的抛光组合物含有具有亲水基团的水溶性聚合物和磨粒。用抛光组合物抛光后的疏水性含硅部分在用与抛光组合物相同组成的另一种组合物抛光后具有低于疏水性含硅部分的水接触角，除了水溶性聚合物是不包含在其中。水溶性聚合物的实例包括多糖和醇化合物。本发明的另一种抛光组合物含有具有硅烷醇基的磨粒和水溶性聚合物。当该抛光组合物在25℃的温度环境中放置一天时，水溶性聚合物以每1μm2磨料表面积5,000个或更多个分子吸附在磨粒上。该水溶性聚合物的实例包括具有聚氧化烯链的非离子化合物。

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