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1. 发明授权

US08685866B2 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US08685866B2
公开(公告)日：2014-04-01
申请号：US12822317
申请日：2010-06-24
申请人： Sadayoshi Horii , Atsushi Sano , Masahito Kitamura , Yoshitake Kato
发明人： Sadayoshi Horii , Atsushi Sano , Masahito Kitamura , Yoshitake Kato
IPC分类号： H01L21/31
CPC分类号： H01L21/3141 , C23C16/40 , C23C16/403 , C23C16/405 , C23C16/4412 , C23C16/45531 , C23C16/45561 , H01L21/02178 , H01L21/02189 , H01L21/02194 , H01L21/0228
摘要： A method of manufacturing a semiconductor device including alternately repeating a process of forming a first metal oxide film including a first metal element and a process of forming a second metal oxide film including a second metal element on a substrate accommodated in a processing chamber, so as to form a third metal oxide film including the first and second metal elements with a predetermined composition ratio on the substrate. One of the first and second metal elements of the third metal oxide film has a concentration higher than a concentration of the other, and one of the first and second metal oxide films including the higher-concentration metal element is formed in a chemical vapor deposition (CVD) mode or an atomic layer deposition (ALD) saturation mode, and the other of the first and second metal oxide films is formed in an ALD unsaturation mode.
摘要翻译：一种制造半导体器件的方法，包括交替地重复形成包括第一金属元素的第一金属氧化物膜的工艺和在容纳在处理室中的基板上形成包括第二金属元素的第二金属氧化物膜的工艺，以便在衬底上形成具有预定组成比的第一和第二金属元素的第三金属氧化物膜。第三金属氧化物膜的第一和第二金属元素中的一个具有比另一个的浓度高的浓度，并且包括高浓度金属元素的第一和第二金属氧化物膜中的一个在化学气相沉积中形成 CVD）模式或原子层沉积（ALD）饱和模式，并且第一和第二金属氧化物膜中的另一个以ALD不饱和模式形成。

2. 发明申请

US20120322254A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：制造半导体器件和衬底加工设备的方法
公开(公告)号：US20120322254A1
公开(公告)日：2012-12-20
申请号：US13461438
申请日：2012-05-01
申请人： Sadayoshi HORII , Yoshinori IMAI , Mika YAMAGUCHI
发明人： Sadayoshi HORII , Yoshinori IMAI , Mika YAMAGUCHI
IPC分类号： H01L21/283
CPC分类号： C23C16/0281 , C23C16/409 , H01L21/3141 , H01L21/31691 , H01L28/55
摘要： A method of manufacturing a semiconductor device of the present invention includes a first step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium, on a substrate having a metal thin film formed on the surface, at a first temperature allowing no oxidization of the metal thin film to occur, and allowing the metal oxide film to be set in an amorphous state; and a second step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium on the metal oxide film formed in the first step, up to a target film thickness, at a second temperature exceeding the first temperature.
摘要翻译：本发明的半导体装置的制造方法包括：形成含有选自铪，钇，镧，铝，锆，锶，钛等的至少一种以上的元素的金属氧化物膜的第一工序，钡，钽，铌，在表面形成有金属薄膜的基板上，在不会发生金属薄膜氧化的第一温度下，将金属氧化物膜设定为非晶态; 以及在形成的金属氧化物膜上形成含有选自铪，钇，镧，铝，锆，锶，钛，钡，钽，铌中的至少一种以上的元素的金属氧化物膜的第二工序在第一步骤中，在超过第一温度的第二温度下达到目标膜厚度。

3. 发明授权

US08026159B2 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US08026159B2
公开(公告)日：2011-09-27
申请号：US12230396
申请日：2008-08-28
申请人： Sadayoshi Horii , Yoshinori Imai
发明人： Sadayoshi Horii , Yoshinori Imai
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/3141 , C23C16/409 , C23C16/4401 , C23C16/4412 , C23C16/45531 , C23C16/45534 , C23C16/45561 , C23C16/45565 , H01L21/31691
摘要： A method of manufacturing a semiconductor device includes the steps of loading a substrate into a processing chamber; processing the substrate by supplying plural kinds of reaction substances into the processing chamber multiple number of times; and unloading the processed substrate from the processing chamber, wherein at least one of the plural kinds of reaction substances contains a source gas obtained by vaporizing a liquid source by a vaporizing part; in the step of processing the substrate, vaporizing operation of supplying the liquid source to the vaporizing part and vaporizing the liquid source is intermittently performed, and at least at a time other than performing the vaporizing operation of the liquid source, a solvent capable of dissolving the liquid source is flown to the vaporizing part at a first flow rate; and at a time other than performing the vaporizing operation of the liquid source and every time performing the vaporizing operation of the liquid source prescribed number of times, the solvent is flown to the vaporizing part at a second flow rate larger than the first flow rate.
摘要翻译：制造半导体器件的方法包括将衬底装载到处理室中的步骤; 通过将多种反应物质多次加入到处理室来处理基板; 从所述处理室卸载所述处理过的基板，其中，所述多种反应物质中的至少一种含有通过汽化部使液体源蒸发得到的源气体; 在处理基板的步骤中，间歇地进行将液体源供给到蒸发部分并使液体源蒸发的蒸发操作，并且至少在除了进行液体源的蒸发操作之外的时间，能够溶解的溶剂液体源以第一流量流到汽化部分; 并且除了执行液体的蒸发操作之外，并且每当执行液体源的蒸发操作规定次数时，溶剂以大于第一流量的第二流量流动到汽化部分。

4. 发明申请

US20110024875A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：制造半导体器件，半导体器件和衬底加工设备的方法
公开(公告)号：US20110024875A1
公开(公告)日：2011-02-03
申请号：US12847328
申请日：2010-07-30
申请人： Yuji TAKEBAYASHI , Hirohisa YAMAZAKI , Sadayoshi Horii , Hideharu ITATANI , Arito OGAWA
发明人： Yuji TAKEBAYASHI , Hirohisa YAMAZAKI , Sadayoshi Horii , Hideharu ITATANI , Arito OGAWA
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L21/02172 , C23C16/40 , C23C16/45546 , C23C16/56 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02194 , H01L21/0228 , H01L21/02356 , H01L21/3142 , H01L21/31616 , H01L21/31641 , H01L21/31645 , H01L21/67017 , H01L21/67103 , H01L28/40
摘要： A high-k capacitor insulating film stable at a higher temperature is formed. There is provided a method of manufacturing a semiconductor device. The method comprises: forming an amorphous first insulating film comprising a first element on a substrate; adding a second element different from the first element to the first insulating film so as to form an amorphous second insulating film on the substrate; and annealing the second insulating film at a predetermined annealing temperature so as to form a third insulating film by changing a phase of the second insulating film. The concentration of the second element added to the first insulating film is controlled according to the annealing temperature.
摘要翻译：形成了在较高温度下稳定的高k电容绝缘膜。提供了制造半导体器件的方法。该方法包括：在衬底上形成包含第一元件的非晶体第一绝缘膜; 将不同于第一元件的第二元件添加到第一绝缘膜，以在基板上形成非晶的第二绝缘膜; 以及在预定退火温度下退火所述第二绝缘膜，以便通过改变所述第二绝缘膜的相位形成第三绝缘膜。根据退火温度控制添加到第一绝缘膜中的第二元素的浓度。

5. 发明申请

US20090061648A1 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US20090061648A1
公开(公告)日：2009-03-05
申请号：US12230396
申请日：2008-08-28
申请人： Sadayoshi Horii , Yoshinori Imai
发明人： Sadayoshi Horii , Yoshinori Imai
IPC分类号： H01L21/31 , B05C11/00
CPC分类号： H01L21/3141 , C23C16/409 , C23C16/4401 , C23C16/4412 , C23C16/45531 , C23C16/45534 , C23C16/45561 , C23C16/45565 , H01L21/31691
摘要： A method of manufacturing a semiconductor device includes the steps of loading a substrate into a processing chamber; processing the substrate by supplying plural kinds of reaction substances into the processing chamber multiple number of times; and unloading the processed substrate from the processing chamber, wherein at least one of the plural kinds of reaction substances contains a source gas obtained by vaporizing a liquid source by a vaporizing part; in the step of processing the substrate, vaporizing operation of supplying the liquid source to the vaporizing part and vaporizing the liquid source is intermittently performed, and at least at a time other than performing the vaporizing operation of the liquid source, a solvent capable of dissolving the liquid source is flown to the vaporizing part at a first flow rate; and at a time other than performing the vaporizing operation of the liquid source and every time performing the vaporizing operation of the liquid source prescribed number of times, the solvent is flown to the vaporizing part at a second flow rate larger than the first flow rate.
摘要翻译：制造半导体器件的方法包括将衬底装载到处理室中的步骤; 通过将多种反应物质多次加入到处理室来处理基板; 从所述处理室卸载所述处理过的基板，其中，所述多种反应物质中的至少一种含有通过汽化部使液体源蒸发得到的源气体; 在处理基板的步骤中，间歇地进行将液体源供给到蒸发部分并使液体源蒸发的蒸发操作，并且至少在除了执行液体源的蒸发操作之外的时间，能够溶解的溶剂液体源以第一流量流到汽化部分; 并且除了执行液体的蒸发操作之外，并且每当执行液体源的蒸发操作规定次数时，溶剂以大于第一流量的第二流量流动到汽化部分。

6. 发明申请

US20070264840A1 Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device 有权
标题翻译：基板处理装置及制造半导体装置的方法
公开(公告)号：US20070264840A1
公开(公告)日：2007-11-15
申请号：US11663179
申请日：2005-10-14
申请人： Hideharu Itatani , Hidehiro Yanai , Sadayoshi Horii , Atsushi Sano
发明人： Hideharu Itatani , Hidehiro Yanai , Sadayoshi Horii , Atsushi Sano
IPC分类号： H01L21/00 , B05C13/00
CPC分类号： C23C16/4412
摘要： To prevent particles from generating by reducing a contact-gas area and improve a purge efficiency by reducing a flow passage capacity. There is provided a substrate processing apparatus, comprising a processing chamber 1 for processing a substrate 2; a substrate carrying port 10 provided on a sidewall of the processing chamber 1, for carrying-in/carrying-out the substrate 2 to/from the processing chamber 1; a holder provided so as to be lifted and lowered in the processing chamber 1, for holding the substrate 2; supply ports 3 and 4 provided above the holder, for supplying gas into the processing chamber 1; an exhaust duct 35 provided on the peripheral part of the holder, for exhausting the gas supplied into the processing chamber 1; and an exhaust port 5 provided below an upper surface of the exhaust duct 35 when the substrate is processed, for exhausting the gas discharged by the exhaust duct 35 outside the processing chamber 1, wherein at least a part of a member constituting the exhaust duct 35 is provided so as to be lifted and lowered.
摘要翻译：为了防止通过减少接触气体区域而产生颗粒，并通过降低流通能力来提高吹扫效率。提供了一种基板处理装置，包括：处理基板2的处理室1; 设置在处理室1的侧壁上的用于将基板2输入/移出处理室1的基板输送口10; 设置成在处理室1中升降的保持件，用于保持基板2; 供应口3和4设置在保持器上方，用于将气体供应到处理室1中; 设置在保持器的周边部分上的用于排出供给到处理室1中的气体的排气管道35; 以及在处理基板时设置在排气管道35的上表面下方的排气口5，用于将排气管道35排出的气体排出到处理室1外部，其中构成排气管道35的构件的至少一部分被提供以被提升和降低。

7. 发明授权

US06787481B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06787481B2
公开(公告)日：2004-09-07
申请号：US10375131
申请日：2003-02-28
申请人： Masayuki Asai , Hisashi Nomura , Sadayoshi Horii
发明人： Masayuki Asai , Hisashi Nomura , Sadayoshi Horii
IPC分类号： H01L2131
CPC分类号： H01L21/0228 , C23C16/405 , C23C16/56 , H01L21/02181 , H01L21/31604
摘要： A method for manufacturing a semiconductor device can efficiently form on a substrate an amorphous thin film containing small amounts of impurities without needs for a rapid annealing treatment and a frequent cleaning process. A method for manufacturing a semiconductor device comprises a film-forming step and a film-modifying step. In the film-forming step, a film formation gas from a film formation raw material supply unit 9 is supplied into a reaction chamber 1 through a shower head 6 to form an amorphous thin film including a hafnium oxide film (HfO2 film) on a substrate 4 which is rotating. In the film-modifying step, a radical generated in a reactant activation unit 11 is supplied through the same shower head 6 as used for supplying the film formation gas, so as to remove a specific element which is an impurity in the film formed in the film-forming step. By a controller 25, the film-forming step and the film-modifying step are subsequently repeated two or more times in the same reaction chamber 1 so as to form a semiconductor device.
摘要翻译：半导体器件的制造方法可以在衬底上有效地形成含有少量杂质的无定形薄膜，而无需快速退火处理和频繁的清洗工艺。一种制造半导体器件的方法包括成膜步骤和薄膜修饰步骤。在成膜步骤中，来自成膜原料供给单元9的成膜气体通过喷淋头6供给到反应室1中，以在基板上形成包含氧化铪膜（HfO 2膜）的非晶质薄膜 4是旋转的。在膜改性步骤中，通过与用于供给成膜气体相同的喷头6供给在反应物活化单元11中产生的自由基，以除去在形成于膜中的膜中的杂质的特定元素成膜步骤。通过控制器25，随后在同一反应室1中重复两次或更多次的成膜步骤和膜修饰步骤，以形成半导体器件。

8. 发明授权

US08728935B2 Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus 有权
标题翻译：半导体装置的制造方法，基板的处理方法及基板处理装置
公开(公告)号：US08728935B2
公开(公告)日：2014-05-20
申请号：US12974884
申请日：2010-12-21
申请人： Kazuhiro Harada , Hideharu Itatani , Sadayoshi Horii
发明人： Kazuhiro Harada , Hideharu Itatani , Sadayoshi Horii
IPC分类号： H01L21/44
CPC分类号： C23C16/34 , C23C16/45525 , H01L21/28088 , H01L21/76834 , H01L29/495 , H01L29/513 , H01L29/517
摘要： A method of manufacturing a semiconductor device capable of minimally preventing the property deterioration caused by the oxidation of a metal film, and a substrate processing apparatus are provided. The method of manufacturing a semiconductor device includes: (a) loading a substrate into a processing container; (b) forming a metal film on the substrate using a chemical deposition method by supplying a processing gas into the processing container and exhausting the processing gas; (c) forming an aluminum nitride film on the metal film using the chemical deposition method by supplying an aluminum-containing source gas and a nitrogen-containing gas into the processing container and exhausting the aluminum-containing source gas and the nitrogen-containing gas; and (d) unloading the substrate from the processing container after forming the metal film and the aluminum nitride film, wherein the step (b) and the step (c) are continuously performed while maintaining an inside of the processing container to have an oxygen-free atmosphere.
摘要翻译：提供一种能够最小限度地防止由金属膜氧化引起的特性劣化的半导体器件的制造方法以及基板处理装置。制造半导体器件的方法包括：（a）将衬底装载到处理容器中; （b）使用化学沉积法在所述基板上形成金属膜，通过将处理气体供给到所述处理容器中并排出所述处理气体; （c）使用化学沉积法在所述金属膜上形成氮化铝膜，通过向所述处理容器中供应含铝源气体和含氮气体并排出所述含铝源气体和所述含氮气体; 以及（d）在形成金属膜和氮化铝膜之后，从处理容器中卸载基板，其中在保持处理容器的内部具有氧气流的同时连续执行步骤（b）和步骤（c）自由的气氛。

9. 发明授权

US08404603B2 Method of manufacturing semiconductor device and substrate processing system 有权
标题翻译：制造半导体器件和衬底处理系统的方法
公开(公告)号：US08404603B2
公开(公告)日：2013-03-26
申请号：US12825012
申请日：2010-06-28
申请人： Arito Ogawa , Sadayoshi Horii , Taketoshi Sato , Hideharu Itatani , Nobuyuki Mise , Osamu Tonomura
发明人： Arito Ogawa , Sadayoshi Horii , Taketoshi Sato , Hideharu Itatani , Nobuyuki Mise , Osamu Tonomura
IPC分类号： H01L21/31
CPC分类号： H01L21/31616 , C23C16/303 , C23C16/403 , C23C16/45525 , C23C16/54 , C23C16/56 , H01L21/02178 , H01L21/02181 , H01L21/02194 , H01L21/0228 , H01L21/3141 , H01L21/31604 , H01L21/318 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L28/40
摘要： A method of manufacturing a semiconductor device. In the method, an aluminum-containing insulation film is formed on an electrode film of a substrate by alternately repeating a process of supplying an aluminum precursor into a processing chamber in which the substrate is accommodated and exhausting the aluminum precursor from the processing chamber and a process of supplying an oxidizing or nitriding precursor into the processing chamber and exhausting the oxidizing or nitriding precursor from the processing chamber; and a high permittivity insulation film different from the aluminum-containing insulation film is formed on the aluminum-containing insulation film by alternately repeating a process of supplying a precursor into the processing chamber and exhausting the precursor from the processing chamber and a process of supplying an oxidizing precursor into the processing chamber and exhausting the oxidizing precursor from the processing chamber. In addition, heat treatment is performed on the substrate.
摘要翻译：一种制造半导体器件的方法。在该方法中，通过交替地重复将铝前体供给到容纳基板的处理室中并从处理室排出铝前体的工序，在基板的电极膜上形成含铝绝缘膜，将氧化或氮化前体供应到处理室中并从处理室排出氧化或氮化前体的过程; 并且在含铝绝缘膜上形成与含铝绝缘膜不同的高介电常数绝缘膜，通过交替重复将前体供给到处理室中并从处理室排出前体的过程，氧化前体进入处理室并从处理室排出氧化前体。另外，对基板进行热处理。

10. 发明授权

US08193083B2 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US08193083B2
公开(公告)日：2012-06-05
申请号：US12230782
申请日：2008-09-04
申请人： Sadayoshi Horii , Yoshinori Imai , Mika Karasawa
发明人： Sadayoshi Horii , Yoshinori Imai , Mika Karasawa
IPC分类号： H01L21/44
CPC分类号： C23C16/0281 , C23C16/409 , H01L21/3141 , H01L21/31691 , H01L28/55
摘要： A method of manufacturing a semiconductor device of the present invention includes a first step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium, on a substrate having a metal thin film formed on the surface, at a first temperature allowing no oxidization of the metal thin film to occur, and allowing the metal oxide film to be set in an amorphous state; and a second step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium on the metal oxide film formed in the first step, up to a target film thickness, at a second temperature exceeding the first temperature.
摘要翻译：本发明的半导体装置的制造方法包括：形成含有选自铪，钇，镧，铝，锆，锶，钛等的至少一种以上的元素的金属氧化物膜的第一工序，钡，钽，铌，在表面形成有金属薄膜的基板上，在不会发生金属薄膜氧化的第一温度下，将金属氧化物膜设定为非晶态; 以及在形成的金属氧化物膜上形成含有选自铪，钇，镧，铝，锆，锶，钛，钡，钽，铌中的至少一种以上的元素的金属氧化物膜的第二工序在第一步骤中，在超过第一温度的第二温度下达到目标膜厚度。

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