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1. 发明授权

US08404603B2 Method of manufacturing semiconductor device and substrate processing system 有权
标题翻译：制造半导体器件和衬底处理系统的方法
公开(公告)号：US08404603B2
公开(公告)日：2013-03-26
申请号：US12825012
申请日：2010-06-28
申请人： Arito Ogawa , Sadayoshi Horii , Taketoshi Sato , Hideharu Itatani , Nobuyuki Mise , Osamu Tonomura
发明人： Arito Ogawa , Sadayoshi Horii , Taketoshi Sato , Hideharu Itatani , Nobuyuki Mise , Osamu Tonomura
IPC分类号： H01L21/31
CPC分类号： H01L21/31616 , C23C16/303 , C23C16/403 , C23C16/45525 , C23C16/54 , C23C16/56 , H01L21/02178 , H01L21/02181 , H01L21/02194 , H01L21/0228 , H01L21/3141 , H01L21/31604 , H01L21/318 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L28/40
摘要： A method of manufacturing a semiconductor device. In the method, an aluminum-containing insulation film is formed on an electrode film of a substrate by alternately repeating a process of supplying an aluminum precursor into a processing chamber in which the substrate is accommodated and exhausting the aluminum precursor from the processing chamber and a process of supplying an oxidizing or nitriding precursor into the processing chamber and exhausting the oxidizing or nitriding precursor from the processing chamber; and a high permittivity insulation film different from the aluminum-containing insulation film is formed on the aluminum-containing insulation film by alternately repeating a process of supplying a precursor into the processing chamber and exhausting the precursor from the processing chamber and a process of supplying an oxidizing precursor into the processing chamber and exhausting the oxidizing precursor from the processing chamber. In addition, heat treatment is performed on the substrate.
摘要翻译：一种制造半导体器件的方法。在该方法中，通过交替地重复将铝前体供给到容纳基板的处理室中并从处理室排出铝前体的工序，在基板的电极膜上形成含铝绝缘膜，将氧化或氮化前体供应到处理室中并从处理室排出氧化或氮化前体的过程; 并且在含铝绝缘膜上形成与含铝绝缘膜不同的高介电常数绝缘膜，通过交替重复将前体供给到处理室中并从处理室排出前体的过程，氧化前体进入处理室并从处理室排出氧化前体。另外，对基板进行热处理。

2. 发明申请

US20110003482A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING SYSTEM 有权
标题翻译：制造半导体器件和衬底加工系统的方法
公开(公告)号：US20110003482A1
公开(公告)日：2011-01-06
申请号：US12825012
申请日：2010-06-28
申请人： Arito Ogawa , Sadayoshi Horii , Taketoshi SATO , Hideharu Itatani , Nobuyuki MISE , Osamu Tonomura
发明人： Arito Ogawa , Sadayoshi Horii , Taketoshi SATO , Hideharu Itatani , Nobuyuki MISE , Osamu Tonomura
IPC分类号： H01L21/314 , B05C11/10
CPC分类号： H01L21/31616 , C23C16/303 , C23C16/403 , C23C16/45525 , C23C16/54 , C23C16/56 , H01L21/02178 , H01L21/02181 , H01L21/02194 , H01L21/0228 , H01L21/3141 , H01L21/31604 , H01L21/318 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L28/40
摘要： Provided is a method of manufacturing a semiconductor device. In the method, an aluminium-containing insulation film is formed on an electrode film of a substrate by alternately repeating a process of supplying an aluminium precursor into a processing chamber in which the substrate is accommodated and exhausting the aluminium precursor from the processing chamber and a process of supplying an oxidizing or nitriding precursor into the processing chamber and exhausting the oxidizing or nitriding precursor from the processing chamber; and a high permittivity insulation film different from the aluminium-containing insulation film is formed on the aluminium-containing insulation film by alternately repeating a process of supplying a precursor into the processing chamber and exhausting the precursor from the processing chamber and a process of supplying an oxidizing precursor into the processing chamber and exhausting the oxidizing precursor from the processing chamber. In addition, heat treatment is performed on the substrate.
摘要翻译：提供一种制造半导体器件的方法。在该方法中，通过交替地重复将铝前体供给到容纳基板的处理室中并从处理室排出铝前体的工序，在基板的电极膜上形成含铝绝缘膜，将氧化或氮化前体供应到处理室中并从处理室排出氧化或氮化前体的过程; 并且在含铝绝缘膜上形成与含铝绝缘膜不同的高介电常数绝缘膜，通过交替重复将前体供给到处理室中并从处理室排出前体的过程，氧化前体进入处理室并从处理室排出氧化前体。另外，对基板进行热处理。

3. 发明申请

US20110024875A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：制造半导体器件，半导体器件和衬底加工设备的方法
公开(公告)号：US20110024875A1
公开(公告)日：2011-02-03
申请号：US12847328
申请日：2010-07-30
申请人： Yuji TAKEBAYASHI , Hirohisa YAMAZAKI , Sadayoshi Horii , Hideharu ITATANI , Arito OGAWA
发明人： Yuji TAKEBAYASHI , Hirohisa YAMAZAKI , Sadayoshi Horii , Hideharu ITATANI , Arito OGAWA
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L21/02172 , C23C16/40 , C23C16/45546 , C23C16/56 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02194 , H01L21/0228 , H01L21/02356 , H01L21/3142 , H01L21/31616 , H01L21/31641 , H01L21/31645 , H01L21/67017 , H01L21/67103 , H01L28/40
摘要： A high-k capacitor insulating film stable at a higher temperature is formed. There is provided a method of manufacturing a semiconductor device. The method comprises: forming an amorphous first insulating film comprising a first element on a substrate; adding a second element different from the first element to the first insulating film so as to form an amorphous second insulating film on the substrate; and annealing the second insulating film at a predetermined annealing temperature so as to form a third insulating film by changing a phase of the second insulating film. The concentration of the second element added to the first insulating film is controlled according to the annealing temperature.
摘要翻译：形成了在较高温度下稳定的高k电容绝缘膜。提供了制造半导体器件的方法。该方法包括：在衬底上形成包含第一元件的非晶体第一绝缘膜; 将不同于第一元件的第二元件添加到第一绝缘膜，以在基板上形成非晶的第二绝缘膜; 以及在预定退火温度下退火所述第二绝缘膜，以便通过改变所述第二绝缘膜的相位形成第三绝缘膜。根据退火温度控制添加到第一绝缘膜中的第二元素的浓度。

4. 发明授权

US08420552B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08420552B2
公开(公告)日：2013-04-16
申请号：US12847328
申请日：2010-07-30
申请人： Yuji Takebayashi , Hirohisa Yamazaki , Sadayoshi Horii , Hideharu Itatani , Arito Ogawa
发明人： Yuji Takebayashi , Hirohisa Yamazaki , Sadayoshi Horii , Hideharu Itatani , Arito Ogawa
IPC分类号： H01L21/31
CPC分类号： H01L21/02172 , C23C16/40 , C23C16/45546 , C23C16/56 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02194 , H01L21/0228 , H01L21/02356 , H01L21/3142 , H01L21/31616 , H01L21/31641 , H01L21/31645 , H01L21/67017 , H01L21/67103 , H01L28/40
摘要： A high-k capacitor insulating film stable at a higher temperature is formed. There is provided a method of manufacturing a semiconductor device. The method comprises: forming a first amorphous insulating film comprising a first element on a substrate; adding a second element different from the first element to the first amorphous insulating film so as to form a second amorphous insulating film on the substrate; and annealing the second amorphous insulating film at a predetermined annealing temperature so as to form a third insulating film by changing a phase of the second amorphous insulating film. The concentration of the second element added to the first amorphous insulating film is controlled according to the annealing temperature.
摘要翻译：形成了在较高温度下稳定的高k电容绝缘膜。提供了制造半导体器件的方法。该方法包括：在衬底上形成包含第一元件的第一非晶绝缘膜; 向所述第一非晶绝缘膜添加与所述第一元素不同的第二元素，以在所述基板上形成第二非晶绝缘膜; 以及在预定退火温度下退火所述第二非晶绝缘膜，以便通过改变所述第二非晶绝缘膜的相位形成第三绝缘膜。根据退火温度控制添加到第一非晶绝缘膜中的第二元素的浓度。

5. 发明申请

US20100291763A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：制造半导体器件和衬底加工设备的方法
公开(公告)号：US20100291763A1
公开(公告)日：2010-11-18
申请号：US12781488
申请日：2010-05-17
申请人： Arito OGAWA , Sadayoshi Horii , Hideharu ITATANI
发明人： Arito OGAWA , Sadayoshi Horii , Hideharu ITATANI
IPC分类号： H01L21/3205 , H01L21/31 , B05C11/10
CPC分类号： H01L21/31645 , C23C16/405 , C23C16/45527 , H01L21/02181 , H01L21/0228 , H01L21/3141 , H01L21/6719 , H01L21/68785 , H01L28/40
摘要： Oxidation of a metal film disposed under a high permittivity insulation film can be suppressed, and the productivity of a film-forming process can be improved. In a method of manufacturing a semiconductor device, a first high permittivity insulation film is formed on a substrate by alternately repeating a process of supplying a source into a processing chamber in which the substrate is accommodated and exhausting the source and a process of supplying a first oxidizing source into the processing chamber and exhausting the first oxidizing source; and a second high permittivity insulation film is formed on the first high permittivity insulation film by alternately repeating a process of supplying the source into the processing chamber and exhausting the source and a process of supplying a second oxidizing source different from the first oxidizing source into the processing chamber and exhausting the second oxidizing source.
摘要翻译：可以抑制设置在高介电常数绝缘膜下的金属膜的氧化，并且可以提高成膜工艺的生产率。在制造半导体器件的方法中，通过交替地重复将源提供到其中容纳基板并排出源的处理室中的过程，在基板上形成第一高介电常数绝缘膜，以及提供第一氧化源进入处理室并排出第一氧化源; 并且在第一高介电常数绝缘膜上形成第二高介电常数绝缘膜，通过交替地重复将源提供到处理室并排出源的处理以及将不同于第一氧化源的第二氧化源供给到处理室并排出第二氧化源。

6. 发明申请

US20070264840A1 Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device 有权
标题翻译：基板处理装置及制造半导体装置的方法
公开(公告)号：US20070264840A1
公开(公告)日：2007-11-15
申请号：US11663179
申请日：2005-10-14
申请人： Hideharu Itatani , Hidehiro Yanai , Sadayoshi Horii , Atsushi Sano
发明人： Hideharu Itatani , Hidehiro Yanai , Sadayoshi Horii , Atsushi Sano
IPC分类号： H01L21/00 , B05C13/00
CPC分类号： C23C16/4412
摘要： To prevent particles from generating by reducing a contact-gas area and improve a purge efficiency by reducing a flow passage capacity. There is provided a substrate processing apparatus, comprising a processing chamber 1 for processing a substrate 2; a substrate carrying port 10 provided on a sidewall of the processing chamber 1, for carrying-in/carrying-out the substrate 2 to/from the processing chamber 1; a holder provided so as to be lifted and lowered in the processing chamber 1, for holding the substrate 2; supply ports 3 and 4 provided above the holder, for supplying gas into the processing chamber 1; an exhaust duct 35 provided on the peripheral part of the holder, for exhausting the gas supplied into the processing chamber 1; and an exhaust port 5 provided below an upper surface of the exhaust duct 35 when the substrate is processed, for exhausting the gas discharged by the exhaust duct 35 outside the processing chamber 1, wherein at least a part of a member constituting the exhaust duct 35 is provided so as to be lifted and lowered.
摘要翻译：为了防止通过减少接触气体区域而产生颗粒，并通过降低流通能力来提高吹扫效率。提供了一种基板处理装置，包括：处理基板2的处理室1; 设置在处理室1的侧壁上的用于将基板2输入/移出处理室1的基板输送口10; 设置成在处理室1中升降的保持件，用于保持基板2; 供应口3和4设置在保持器上方，用于将气体供应到处理室1中; 设置在保持器的周边部分上的用于排出供给到处理室1中的气体的排气管道35; 以及在处理基板时设置在排气管道35的上表面下方的排气口5，用于将排气管道35排出的气体排出到处理室1外部，其中构成排气管道35的构件的至少一部分被提供以被提升和降低。

7. 发明授权

US08728935B2 Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus 有权
标题翻译：半导体装置的制造方法，基板的处理方法及基板处理装置
公开(公告)号：US08728935B2
公开(公告)日：2014-05-20
申请号：US12974884
申请日：2010-12-21
申请人： Kazuhiro Harada , Hideharu Itatani , Sadayoshi Horii
发明人： Kazuhiro Harada , Hideharu Itatani , Sadayoshi Horii
IPC分类号： H01L21/44
CPC分类号： C23C16/34 , C23C16/45525 , H01L21/28088 , H01L21/76834 , H01L29/495 , H01L29/513 , H01L29/517
摘要： A method of manufacturing a semiconductor device capable of minimally preventing the property deterioration caused by the oxidation of a metal film, and a substrate processing apparatus are provided. The method of manufacturing a semiconductor device includes: (a) loading a substrate into a processing container; (b) forming a metal film on the substrate using a chemical deposition method by supplying a processing gas into the processing container and exhausting the processing gas; (c) forming an aluminum nitride film on the metal film using the chemical deposition method by supplying an aluminum-containing source gas and a nitrogen-containing gas into the processing container and exhausting the aluminum-containing source gas and the nitrogen-containing gas; and (d) unloading the substrate from the processing container after forming the metal film and the aluminum nitride film, wherein the step (b) and the step (c) are continuously performed while maintaining an inside of the processing container to have an oxygen-free atmosphere.
摘要翻译：提供一种能够最小限度地防止由金属膜氧化引起的特性劣化的半导体器件的制造方法以及基板处理装置。制造半导体器件的方法包括：（a）将衬底装载到处理容器中; （b）使用化学沉积法在所述基板上形成金属膜，通过将处理气体供给到所述处理容器中并排出所述处理气体; （c）使用化学沉积法在所述金属膜上形成氮化铝膜，通过向所述处理容器中供应含铝源气体和含氮气体并排出所述含铝源气体和所述含氮气体; 以及（d）在形成金属膜和氮化铝膜之后，从处理容器中卸载基板，其中在保持处理容器的内部具有氧气流的同时连续执行步骤（b）和步骤（c）自由的气氛。

8. 发明授权

US08435905B2 Manufacturing method of semiconductor device, and substrate processing apparatus 有权
标题翻译：半导体装置的制造方法以及基板处理装置
公开(公告)号：US08435905B2
公开(公告)日：2013-05-07
申请号：US11921936
申请日：2006-06-13
申请人： Sadayoshi Horii , Hideharu Itatani , Kazuhiro Harada
发明人： Sadayoshi Horii , Hideharu Itatani , Kazuhiro Harada
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/18 , C23C16/45534 , C23C16/45542 , H01L21/28562 , H01L27/10817 , H01L27/10852 , H01L28/65
摘要： The present invention provides a manufacturing method of a semiconductor device that has a rapid film formation rate and high productivity, and to provide a substrate processing apparatus.The method comprises the steps of loading a substrate into a processing chamber; forming a thin film having a desired thickness on the substrate by setting as one cycle the step of supplying into the processing chamber adsorption auxiliary gas for aiding an adsorption of a source gas vaporized from a liquid source on the substrate and causing this adsorption auxiliary gas to be adsorbed on the substrate, the step of supplying the source gas into the processing chamber, causing the source gas to react with the adsorption auxiliary gas on the substrate, and causing this source gas to be adsorbed on the substrate, and the step of supplying a reaction gas into the processing chamber and causing this reaction gas to react with the source gas adsorbed on the substrate, and repeating this cycle a plurality of times; and unloading the substrate provided with the thin film from the inside of the processing chamber.
摘要翻译：本发明提供一种具有快速成膜速度和高生产率的半导体器件的制造方法，并提供一种衬底处理设备。该方法包括将基板装载到处理室中的步骤; 在基板上形成具有期望厚度的薄膜，其中，将作为一个循环的步骤设置在处理室中的吸附辅助气体，用于辅助从液体源蒸发的源气体吸附在基板上，并使该吸附辅助气体吸附在基板上，将源气体供给到处理室中，使源气体与基板上的吸附辅助气体反应并使该源气体吸附在基板上的工序，使反应气体进入处理室，使该反应气体与吸附在基板上的原料气反应，并重复该循环多次; 以及从处理室的内部卸载设置有薄膜的基板。

9. 发明授权

US07723245B2 Method for manufacturing semiconductor device, and substrate processing apparatus 有权
标题翻译：半导体装置的制造方法以及基板处理装置
公开(公告)号：US07723245B2
公开(公告)日：2010-05-25
申请号：US11791222
申请日：2005-11-29
申请人： Atsushi Sano , Sadayoshi Horii , Hideharu Itatani , Katsuhiko Yamamoto
发明人： Atsushi Sano , Sadayoshi Horii , Hideharu Itatani , Katsuhiko Yamamoto
IPC分类号： H01L21/31
CPC分类号： H01L21/02148 , C23C16/401 , C23C16/45523 , H01L21/0228 , H01L21/31604
摘要： The ability to control a concentration ratio of a metal and silicon in a metal silicate film is improved, allowing a high-quality semiconductor device to be manufactured.A step is provided for supplying a first raw material, which contains a metal atom, and a second raw material, which contains a silicon atom and a nitrogen atom, into a processing chamber (4); and forming on a substrate (30) a metal silicate film containing the metal atom and silicon atom. A raw material supply ratio of the first and second raw materials is controlled in the step of forming a metal silicate film, thereby controlling a concentration ratio of the metal and silicon in the resulting metal silicate film.
摘要翻译：提高了控制金属硅酸盐膜中的金属和硅的浓度比的能力，能够制造高品质的半导体装置。提供了将含有金属原子的第一原料和含有硅原子和氮原子的第二原料供给到处理室（4）中的步骤; 以及在基板（30）上形成含有所述金属原子和硅原子的金属硅酸盐膜。在形成金属硅酸盐膜的步骤中控制第一和第二原料的原料供给比，从而控制所得金属硅酸盐膜中的金属和硅的浓度比。

10. 发明授权

US07648578B1 Substrate processing apparatus, and method for manufacturing semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US07648578B1
公开(公告)日：2010-01-19
申请号：US11547137
申请日：2005-06-15
申请人： Hideharu Itatani , Sadayoshi Horii , Hidehiro Yanai
发明人： Hideharu Itatani , Sadayoshi Horii , Hidehiro Yanai
IPC分类号： C23C16/455 , H01L21/31
CPC分类号： C23C16/45546 , C23C16/4412 , C23C16/4583 , H01L21/31691
摘要： A substrate is held by a susceptor (holding tool) in a processing chamber. A plate is provided on a periphery of the substrate. Gas supply ports are constructed to be provided on a side of the substrate and above the plate, and to supply gas to the substrate from a space above the plate. Outlets are provided at least on an upstream side and downstream side of the substrate on the plate, and are adapted to discharge the gas to a space below the plate. An exhaust port communicates with the outlets, and is provided on an opposite side to the gas supply ports with the substrate sandwiched there between and below the plate. The outlets are composed so that conductance of the upstream outlet in a gas flow between the outlets can be larger than conductance of the downstream outlet.
摘要翻译：基板由处理室中的基座（保持工具）保持。在基板的周边设置有板。气体供给口被构造成设置在基板的一侧并且在板上方，并且从板上方的空间向基板供应气体。至少在板上的基板的上游侧和下游侧设置出口，并且适于将气体排出到板下方的空间。排气口与出口连通，并且设置在气体供给口的相对侧，衬底夹在板之间和下方。出口构成为使得出口之间的气流中的上游出口的电导可以大于下游出口的电导。

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